Single P-channel MOSFET ELM34423AA-N ■General description ■Features ELM34423AA-N uses advanced trench technology to provide excellent Rds(on), low gate charge and low gate resistance. Internal ESD protection is included. • • • • • Vds=-30V Id=-8A Rds(on) < 20Ω (Vgs=-10V) Rds(on) < 35Ω (Vgs=-4.5V) ESD protected ■Maximum absolute ratings Parameter Drain-source voltage Gate-source voltage Symbol Vds Vgs Ta=25°C Ta=70°C Continuous drain current Pulsed drain current Avalanche current Avalanche energy L=0.1mH Tc=25°C Power dissipation Ta=25°C. Unless otherwise noted. Limit Unit Note -30 V ±20 V Tc=70°C Junction and storage temperature range Idm -8.0 -6.5 -50 Ias -30 A Eas 46 2.0 mJ Id Pd Tj, Tstg A 5 A 3, 5 W 1.3 -55 to 150 °C ■Thermal characteristics Parameter Symbol Maximum junction-to-ambient Rθja ■Pin configuration Typ. Max. Unit 60 °C/W Note ■Circuit SOP-8(TOP VIEW) 1 8 2 7 3 6 4 5 Pin No. 1 Pin name SOURCE 2 3 SOURCE SOURCE 4 5 GATE DRAIN 6 7 8 DRAIN DRAIN DRAIN 4-1 D G S Single P-channel MOSFET ELM34423AA-N ■Electrical characteristics Parameter STATIC PARAMETERS Drain-source breakdown voltage Symbol Condition BVdss Id=-250μA, Vgs=0V Zero gate voltage drain current Idss Gate-body leakage current Igss Vds=-20V, Vgs=0V, Ta=70°C -10 Vds=0V, Vgs=±16V ±30 nA -3.0 V A 1 mΩ 1 -1.2 S V 1 1 -8 A Static drain-source on-resistance Rds(on) Max. body-diode continuous current DYNAMIC PARAMETERS V -1 Vgs(th) Vds=Vgs, Id=-250μA Id(on) Vds=-5V, Vgs=-10V Gfs Vsd -30 Vds=-24V, Vgs=0V Gate threshold voltage On-state drain current Forward transconductance Diode forward voltage Ta=25°C. Unless otherwise noted. Min. Typ. Max. Unit Note -1.0 -50 -1.6 Vgs=-10V, Id=-8A 17 20 Vgs=-4.5V, Id=-7A 27 35 Vds=-10V, Id=-8A If=-8A, Vgs=0V 22 Is μA Input capacitance Output capacitance Ciss Coss Vgs=0V, Vds=-15V, f=1MHz 1500 293 pF pF Reverse transfer capacitance Gate resistance SWITCHING PARAMETERS Total gate charge Crss Rg Vgs=0V, Vds=0V, f=1MHz 207 3.1 pF Ω Gate-source charge Qg Qgs 30 5 nC nC 2 2 Gate-drain charge Turn-on delay time Qgd td(on) 8 20 nC ns 2 2 Turn-on rise time Turn-off delay time tr 12 ns 2 48 ns 2 22 18 ns ns 2 7 nC Turn-off fall time Reverse recovery time Reverse recovery charge Vgs=-10V, Vds=-15V Id=-8A Vgs=-10V, Vds=-15V td(off) Id=-8A, Rgen=6Ω tf trr Qrr If=-8A, dIf/dt=100A/μs NOTE : 1. Pulsed width≤300μsec and Duty cycle≤2%. 2. Independent of operating temperature. 3. Pulsed width limited by maximum junction temperature. 4. Duty cycle ≤ 1%. 5. Limited only by maximum temperature allowed. 4-2 Single P-channel MOSFET ELM34423AA-N ■Typical electrical and thermal characteristics � � � � � � 4-3 Single P-channel MOSFET ELM34423AA-N � � � � � � � 4-4