ELM ELM34423AA-N Single p-channel mosfet Datasheet

Single P-channel MOSFET
ELM34423AA-N
■General description
■Features
ELM34423AA-N uses advanced trench technology to
provide excellent Rds(on), low gate charge and low gate
resistance. Internal ESD protection is included.
•
•
•
•
•
Vds=-30V
Id=-8A
Rds(on) < 20Ω (Vgs=-10V)
Rds(on) < 35Ω (Vgs=-4.5V)
ESD protected
■Maximum absolute ratings
Parameter
Drain-source voltage
Gate-source voltage
Symbol
Vds
Vgs
Ta=25°C
Ta=70°C
Continuous drain current
Pulsed drain current
Avalanche current
Avalanche energy
L=0.1mH
Tc=25°C
Power dissipation
Ta=25°C. Unless otherwise noted.
Limit
Unit
Note
-30
V
±20
V
Tc=70°C
Junction and storage temperature range
Idm
-8.0
-6.5
-50
Ias
-30
A
Eas
46
2.0
mJ
Id
Pd
Tj, Tstg
A
5
A
3, 5
W
1.3
-55 to 150
°C
■Thermal characteristics
Parameter
Symbol
Maximum junction-to-ambient
Rθja
■Pin configuration
Typ.
Max.
Unit
60
°C/W
Note
■Circuit
SOP-8(TOP VIEW)
1
8
2
7
3
6
4
5
Pin No.
1
Pin name
SOURCE
2
3
SOURCE
SOURCE
4
5
GATE
DRAIN
6
7
8
DRAIN
DRAIN
DRAIN
4-1
D
G
S
Single P-channel MOSFET
ELM34423AA-N
■Electrical characteristics
Parameter
STATIC PARAMETERS
Drain-source breakdown voltage
Symbol
Condition
BVdss Id=-250μA, Vgs=0V
Zero gate voltage drain current
Idss
Gate-body leakage current
Igss
Vds=-20V, Vgs=0V, Ta=70°C
-10
Vds=0V, Vgs=±16V
±30
nA
-3.0
V
A
1
mΩ
1
-1.2
S
V
1
1
-8
A
Static drain-source on-resistance
Rds(on)
Max. body-diode continuous current
DYNAMIC PARAMETERS
V
-1
Vgs(th) Vds=Vgs, Id=-250μA
Id(on) Vds=-5V, Vgs=-10V
Gfs
Vsd
-30
Vds=-24V, Vgs=0V
Gate threshold voltage
On-state drain current
Forward transconductance
Diode forward voltage
Ta=25°C. Unless otherwise noted.
Min. Typ. Max. Unit Note
-1.0
-50
-1.6
Vgs=-10V, Id=-8A
17
20
Vgs=-4.5V, Id=-7A
27
35
Vds=-10V, Id=-8A
If=-8A, Vgs=0V
22
Is
μA
Input capacitance
Output capacitance
Ciss
Coss Vgs=0V, Vds=-15V, f=1MHz
1500
293
pF
pF
Reverse transfer capacitance
Gate resistance
SWITCHING PARAMETERS
Total gate charge
Crss
Rg Vgs=0V, Vds=0V, f=1MHz
207
3.1
pF
Ω
Gate-source charge
Qg
Qgs
30
5
nC
nC
2
2
Gate-drain charge
Turn-on delay time
Qgd
td(on)
8
20
nC
ns
2
2
Turn-on rise time
Turn-off delay time
tr
12
ns
2
48
ns
2
22
18
ns
ns
2
7
nC
Turn-off fall time
Reverse recovery time
Reverse recovery charge
Vgs=-10V, Vds=-15V
Id=-8A
Vgs=-10V, Vds=-15V
td(off) Id=-8A, Rgen=6Ω
tf
trr
Qrr
If=-8A, dIf/dt=100A/μs
NOTE :
1. Pulsed width≤300μsec and Duty cycle≤2%.
2. Independent of operating temperature.
3. Pulsed width limited by maximum junction temperature.
4. Duty cycle ≤ 1%.
5. Limited only by maximum temperature allowed.
4-2
Single P-channel MOSFET
ELM34423AA-N
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■Typical
electrical and thermal characteristics
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4-3

Single P-channel MOSFET


ELM34423AA-N
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