DMN6070SFCL 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS ADVANCE INFORMATION 60V Features and Benefits RDS(ON) max ID max TA = +25°C • Typical off board profile of 0.5mm - ideally suited for thin 85 mΩ @ VGS = 10V 3.0A • applications Low RDS(ON) – minimizes conduction losses 120 mΩ @ VGS = 4V 2.5A • PCB footprint of 2.56mm • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • Qualified to AEC-Q101 standards for High Reliability Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. 2 Mechanical Data • • Case: X1-DFN1616-6 Type E Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Applications • Moisture Sensitivity: Level 1 per J-STD-020 • Power Management Functions • • Analog Switch • Lead Free Plating (NiPdAu Finish over Copper leadframe) Terminals: Solderable per MIL-STD-202, Method 208 e4 • Weight: 0.04 grams (approximate) X1-DFN1616-6 Type E D Pin 1 G S Top View Bottom View Top View Pin-Out Device Symbol Ordering Information (Note 4) Product DMN6070SFCL-7 Notes: Reel size (inches) 7 Tape Width (mm) 8 Quantity per Reel 3,000 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html Marking Information N60 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: A = 2013) M = Month (ex: 9 = September) N60 YM Date Code Key Year Code Month Code 2011 Y Jan 1 2012 Z Feb 2 DMN6070SFCL Document number: DS36502 Rev. 3 - 2 Mar 3 2013 A Apr 4 May 5 2014 B Jun 6 1 of 5 www.diodes.com 2015 C Jul 7 Aug 8 2016 D Sep 9 Oct O 2017 E Nov N Dec D March 2014 © Diodes Incorporated DMN6070SFCL Maximum Ratings (@TA = +25°C, unless otherwise specified.) Symbol Value Units Drain-Source Voltage Characteristic VDSS 60 V Gate-Source Voltage VGSS ±20 V ID 3.0 2.5 A IDM 10 A ADVANCE INFORMATION Continuous Drain Current (Note 6) VGS = 10V TA = +25°C TA = +70°C Steady State Pulsed Drain Current (10μs pulse, Duty cycle = 1%) Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Total Power Dissipation Thermal Resistance, Junction to Ambient Symbol (Note 5) (Note 6) (Note 5) Value 0.6 1.8 200 PD RθJA (Note 6) Operating and Storage Temperature Range Units W W °C/W 67 -55 to +150 TJ, TSTG °C Electrical Characteristics N-CHANNEL (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Symbol Min Typ Max Unit Test Condition BVDSS 60 — — V VGS = 0V, ID = 250μA Zero Gate Voltage Drain Current TJ = +25°C IDSS — — 1.0 µA VDS = 60V, VGS = 0V Gate-Source Leakage IGSS — — ±100 nA VGS = ±16V, VDS = 0V VGS(th) 1 V VDS = VGS, ID = 250μA ON CHARACTERISTICS (Note 7) Gate Threshold Voltage Static Drain-Source On-Resistance RDS (ON) — — 3 67 85 74 120 mΩ VGS = 10V, ID = 1.5A VGS = 4V, ID = 0.5A Forward Transfer Admittance |Yfs| — 2.6 — S VDS = 5V, ID = 1.5A Diode Forward Voltage VSD — 0.7 1.2 V VGS = 0V, IS = 3A DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Ciss — 606 — pF Output Capacitance Coss — 32.6 — pF Reverse Transfer Capacitance Crss — 24.6 — pF Gate Resistance Rg — 1.5 — Ω Total Gate Charge (VGS =10V) Qg — 12.3 — nC Total Gate Charge (VGS =4.5V) Qg — 5.6 — nC Gate-Source Charge Qgs — 1.7 — nC Gate-Drain Charge Qgd — 1.9 — nC Turn-On Delay Time tD(on) — 3.5 — ns Turn-On Rise Time tr — 4.1 — ns Turn-Off Delay Time tD(off) — 35 — ns tf — 11 — ns Turn-Off Fall Time Notes: VDS = 20V, VGS = 0V, f = 1.0MHz VDS = 0V, VGS = 0V, f = 1MHz VDS = 30V, ID = 3A VGS = 10V, VDS = 30V, RG = 20Ω, RL = 50Ω 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout 6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. DMN6070SFCL Document number: DS36502 Rev. 3 - 2 2 of 5 www.diodes.com March 2014 © Diodes Incorporated DMN6070SFCL 15.0 12 VGS = 4V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) VDS = 5V VGS = 5V 12.0 9.0 VGS = 3.5V VGS = 3.0V 6.0 9 6 T A = 150°C T A = 85°C T A = 25°C 3 3.0 TA = 125°C TA = -55°C VGS = 2.5V 0.0 0 1 2 3 4 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1 Typical Output Characteristics RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0.12 VGS = 4V 0.09 VGS = 10V 0.06 0.03 0 0 3 6 9 12 ID, DRAIN-SOURCE CURRENT (A) Figure 3 Typical On-Resistance vs. Drain Current and Gate Voltage 15 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 2.4 2.0 VGS = 10V ID = 3A 1.6 VGS = 4V ID = 3A 1.2 0.8 0.4 -50 0 5 0.15 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) ADVANCE INFORMATION 15 VGS = 10V -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 5 On-Resistance Variation with Temperature DMN6070SFCL Document number: DS36502 Rev. 3 - 2 3 of 5 www.diodes.com 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 VGS, GATE-SOURCE VOLTAGE (V) Figure 2 Typical Transfer Characteristics 5 0.3 VGS = 4V 0.25 TA = 150°C 0.2 0.15 TA = 125°C TA = 85°C 0.1 T A = 25°C 0.05 TA = -55°C 0 0 3 6 9 12 ID, DRAIN CURRENT (A) Figure 4 Typical On-Resistance vs. Drain Current and Temperature 15 0.2 0.18 0.16 0.14 VGS = 4V ID = 1A 0.12 0.1 0.08 VGS = 10V ID = 3A 0.06 0.04 0.02 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 6 On-Resistance Variation with Temperature March 2014 © Diodes Incorporated 20 2 15 IS, SOURCE CURRENT (A) VGS(th), GATE THRESHOLD VOLTAGE (V) 2.5 ID = 1mA ID = 250µA 1.5 1 TA = 150°C T A = 125°C 10 TA = 25°C T A = 85°C 5 TA = -55°C 0.5 -50 0 10000 10 1000 Ciss 100 Coss Crss 10 1 VGS GATE THRESHOLD VOLTAGE (V) -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 7 Gate Threshold Variation vs. Ambient Temperature CT, JUNCTION CAPACITANCE (pF) ADVANCE INFORMATION DMN6070SFCL f = 1MHz 0 10 20 30 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 9 Typical Junction Capacitance 40 0 0.3 0.6 0.9 1.2 1.5 VSD, SOURCE-DRAIN VOLTAGE (V) Figure 8 Diode Forward Voltage vs. Current 9 8 7 6 VDS = 30V ID = 3 A 5 4 3 2 1 0 0 2 4 6 8 10 12 Qg, TOTAL GATE CHARGE (nC) Figure 10 Gate Charge 14 Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. A1 A3 X1-DFN1616-6 Type E Dim Min Max Typ A 0.47 0.53 0.50 A1 0 0.05 0.02 A3 — — 0.13 b 0.20 0.30 0.25 b1 0.10 0.30 0.20 D 1.55 1.65 1.60 D2 0.57 0.77 0.67 E 1.55 1.65 1.60 E2 1.30 1.50 1.40 e — — 0.50 L 0.25 0.35 0.30 L1 0.52 0.72 0.62 Z — — 0.175 All Dimensions in mm A D D2 b1 E E2 L1 L(2X) e Z(4X) DMN6070SFCL Document number: DS36502 Rev. 3 - 2 b(6X) 4 of 5 www.diodes.com March 2014 © Diodes Incorporated DMN6070SFCL Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for latest version. X3 Y (2x) ADVANCE INFORMATION Dimensions C X X1 X2 X3 Y Y1 Y2 Y1 Y2 X2 X1 X (6x) Value (in mm) 0.500 0.300 0.200 0.720 0.400 0.475 0.620 1.900 C IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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