IRFW/I530A Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology RDS(on) = 0.11 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 14 A Improved Gate Charge Extended Safe Operating Area D2-PAK 175 C Operating Temperature Lower Leakage Current : 10 µ A (Max.) @ VDS = 100V Ο I2-PAK 2 Lower RDS(ON) : 0.092 Ω(Typ.) 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS Characteristic Drain-to-Source Voltage Value Ο ID Continuous Drain Current (TC=25 C) Continuous Drain Current (TC=100 C) Drain Current-Pulsed VGS Gate-to-Source Voltage EAS Single Pulsed Avalanche Energy IAR Avalanche Current EAR Repetitive Avalanche Energy dv/dt Peak Diode Recovery dv/dt A 9.9 1 O 56 + _ 20 O 1 O 1 O O3 261 mJ 14 A 2 Total Power Dissipation (TA=25 C) * Ο Ο Total Power Dissipation (TC=25 C ) Linear Derating Factor TJ , TSTG V 14 Ο IDM PD Units 100 Operating Junction and A V 5.5 mJ 6.5 V/ns 3.8 W 55 W 0.36 W/ C Ο - 55 to +175 Storage Temperature Range Ο TL Maximum Lead Temp. for Soldering C 300 Purposes, 1/8” from case for 5-seconds Thermal Resistance Symbol Characteristic Typ. Max. R θJC Junction-to-Case -- 2.74 R θJA Junction-to-Ambient * -- 40 R θJA Junction-to-Ambient -- 62.5 Units Ο C /W * When mounted on the minimum pad size recommended (PCB Mount). Rev. B ©1999 Fairchild Semiconductor Corporation N-CHANNEL POWER MOSFET IRFW/I530A Electrical Characteristics (TC=25 C unless otherwise specified) Ο Symbol Characteristic BVDSS Drain-Source Breakdown Voltage ∆ BV/ ∆TJ VGS(th) IGSS IDSS RDS(on) Min. Typ. Max. Units 100 -- -- V Ο 0.11 -- V/ C 2.0 -- 4.0 V Gate-Source Leakage , Forward -- -- 100 Gate-Source Leakage , Reverse -- -- -100 -- -- 10 -- -- 100 -- -- 0.11 Ω VGS=10V,ID=7A 4 O Ω VDS=40V,ID=7A 4 O Gate Threshold Voltage Drain-to-Source Leakage Current Static Drain-Source On-State Resistance Forward Transconductance -- 10.25 -- Ciss Input Capacitance -- 610 790 Coss Output Capacitance -- 150 175 Crss Reverse Transfer Capacitance -- 62 72 td(on) Turn-On Delay Time -- 13 40 Rise Time -- 14 40 Turn-Off Delay Time -- 55 110 Fall Time -- 36 80 Qg Total Gate Charge -- 27 36 Qgs Gate-Source Charge -- 4.5 -- Qgd Gate-Drain(“Miller”) Charge -- 12.8 -- td(off) tf VGS=0V,ID=250 µA ID=250µ A See Fig 7 -- Breakdown Voltage Temp. Coeff. gfs tr Test Condition nA µA pF VDS=5V,ID=250 µA VGS=20V VGS=-20V VDS=100V Ο VDS=80V,TC=150 C VGS=0V,VDS=25V,f =1MHz See Fig 5 VDD=50V,ID=14A, ns RG=12Ω See Fig 13 4 O 5 O VDS=80V,VGS=10V, nC ID=14A See Fig 6 & Fig 12 4 O 5 O Source-Drain Diode Ratings and Characteristics Symbol Characteristic Min. Typ. Max. Units Test Condition IS Continuous Source Current -- -- ISM Pulsed-Source Current 1 O -- -- 56 VSD Diode Forward Voltage 4 O -- -- 1.5 V TJ=25 C ,IS=14A,VGS=0V trr Reverse Recovery Time -- 109 -- TJ=25 C ,IF=14A Qrr Reverse Recovery Charge -- 0.41 -- ns µC 14 A Notes ; Temperature 1 O Repetitive Rating : Pulse Width Limited by Maximum Junction o 2 L=2mH, I AS=14A, V DD=25V, R G=27 Ω, Starting T J =25 C O O3 ISD <_ 14A, di/dt <_ 350A/ µs, VDD<_ BVDSS , Starting T J =25 oC _2% 4 Pulse Test : Pulse Width = 250 µs, Duty Cycle < O Essentially Independent of Operating Temperature 5 O Integral reverse pn-diode in the MOSFET Ο Ο diF/dt=100A/ µ s 4 O N-CHANNEL POWER MOSFET IRFW/I530A Fig 1. Output Characteristics Fig 2. Transfer Characteristics VGS ID , Drain Current ID , Drain Current 101 [A] 15V 10 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom : 4.5 V [A] Top : @ Notes : 1. 250 µs Pulse Test 2. TC = 25 oC 0 10 10-1 100 101 175 oC 100 25 oC @ Notes : 1. VGS = 0 V 10-1 101 2 3. 250 µs Pulse Test 4 6 8 10 VGS , Gate-Source Voltage [V] [A] VDS , Drain-Source Voltage [V] Fig 3. On-Resistance vs. Drain Current Fig 4. Source-Drain Diode Forward Voltage 0.20 IDR , Reverse Drain Current RDS(on) , [Ω] Drain-Source On-Resistance 2. VDS = 40 V - 55 oC VGS = 10 V 0.15 0.10 VGS = 20 V 0.05 @ Note : TJ = 25 oC 15 30 45 100 60 @ Notes : 1. VGS = 0 V 2. 250 µs Pulse Test 175 oC 25 oC 10-1 0.4 0.00 0 101 0.6 0.8 ID , Drain Current [A] 1.0 1.2 1.4 1.6 1.8 2.0 2.2 VSD , Source-Drain Voltage [V] Fig 5. Capacitance vs. Drain-Source Voltage Fig 6. Gate Charge vs. Gate-Source Voltage Ciss= Cgs+ Cgd ( Cds= shorted ) Coss= Cds+ Cgd [V] C iss Crss= Cgd VGS , Gate-Source Voltage Capacitance [pF] 1000 750 C oss 500 @ Notes : 1. VGS = 0 V C rss 2. f = 1 MHz 250 00 10 101 VDS , Drain-Source Voltage [V] VDS = 20 V 10 VDS = 50 V VDS = 80 V 5 @ Notes : ID = 14.0 A 0 0 5 10 15 20 QG , Total Gate Charge [nC] 25 30 N-CHANNEL POWER MOSFET Fig 7. Breakdown Voltage vs. Temperature 1.2 1.1 1.0 0.9 Fig 8. On-Resistance vs. Temperature RDS(on) , (Normalized) Drain-Source On-Resistance BVDSS , (Normalized) Drain-Source Breakdown Voltage IRFW/I530A @ Notes : 1. VGS = 0 V 2. ID = 250 µA 0.8 -75 -50 -25 0 25 50 75 100 125 150 175 3.0 2.5 2.0 1.5 1.0 @ Notes : 1. VGS = 10 V 0.5 2. ID = 7.0 A 0.0 -75 200 -50 -25 0 25 50 75 100 125 150 175 200 TJ , Junction Temperature [ oC] TJ , Junction Temperature [ oC] Fig 9. Max. Safe Operating Area Fig 10. Max. Drain Current vs. Case Temperature [A] ID , Drain Current 102 10 µs 100 µs 1 ms 101 10 ms DC 0 10 @ Notes : 1. TC = 25 oC 12 9 6 3 2. TJ = 175 oC 3. Single Pulse 10-1 100 101 0 25 102 50 75 100 125 Tc , Case Temperature [ oC] VDS , Drain-Source Voltage [V] Thermal Response Fig 11. Thermal Response D=0.5 100 @ Notes : 1. Z J C (t)=2.74 0.2 θ 10- 1 o C/W Max. 0.1 2. Duty Factor, D=t1 /t2 0.05 3. TJ M -TC =PD M *Zθ J C (t) 0.02 0.01 PDM single pulse t1 t2 θ Z JC(t) , ID , Drain Current [A] 15 Operation in This Area is Limited by R DS(on) 10- 5 10- 4 10- 3 10- 2 10- 1 t 1 , Square Wave Pulse Duration 100 [sec] 101 150 175 N-CHANNEL POWER MOSFET IRFW/I530A Fig 12. Gate Charge Test Circuit & Waveform “ Current Regulator ” 12V VGS Same Type as DUT 50K Ω Qg 200nF 10V 300nF VDS Qgd Qgs VGS DUT 3mA R1 R2 Current Sampling (I G) Resistor Charge Current Sampling (I D) Resistor Fig 13. Resistive Switching Test Circuit & Waveforms RL Vout Vout 90% VDD Vin ( 0.5 rated V DS ) RG DUT Vin 10V 10% td(on) tr td(off) t on tf t off Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms BVDSS 1 EAS = ---- LL IAS2 -------------------2 BVDSS -- VDD LL VDS Vary tp to obtain required peak ID BVDSS IAS ID RG C DUT ID (t) VDD VDS (t) VDD 10V tp tp Time N-CHANNEL POWER MOSFET IRFW/I530A Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS -- IS L Driver VGS RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by “RG” • IS controlled by Duty Factor “D” Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current IS ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt Vf Body Diode Forward Voltage Drop VDD TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ CoolFET™ CROSSVOLT™ E2CMOSTM FACT™ FACT Quiet Series™ FAST® FASTr™ GTO™ HiSeC™ ISOPLANAR™ MICROWIRE™ POP™ PowerTrench™ QS™ Quiet Series™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 TinyLogic™ UHC™ VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.