MJD2955(PNP),
MJD3055(NPN)
Complementary Power
Transistors
DPAK for Surface Mount Applications
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Designed for general purpose amplifier and low speed switching
applications.
Features
• Lead Formed for Surface Mount Applications in Plastic Sleeves
•
•
•
•
•
•
(No Suffix)
Straight Lead Version in Plastic Sleeves (“−1” Suffix)
Electrically Similar to MJE2955 and MJE3055
High Current Gain−Bandwidth Product
Epoxy Meets UL 94 V−0 @ 0.125 in
NJV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These Devices are Pb−Free and are RoHS Compliant
SILICON
POWER TRANSISTORS
10 AMPERES
60 VOLTS, 20 WATTS
COMPLEMENTARY
COLLECTOR
2, 4
1
BASE
1
BASE
3
EMITTER
MAXIMUM RATINGS
Rating
Symbol
Max
Unit
VCEO
60
Vdc
Collector−Base Voltage
VCB
70
Vdc
Emitter−Base Voltage
VEB
5
Vdc
IC
10
Adc
IB
6
Adc
20
0.16
W
W/°C
1.75
0.014
W
W/°C
Collector−Emitter Voltage
Collector Current
Base Current
COLLECTOR
2, 4
Total Power Dissipation
@ TC = 25°C
Derate above 25°C
PD{
Total Power Dissipation (Note 1)
@ TA = 25°C
Derate above 25°C
PD
Operating and Storage Junction
Temperature Range
TJ, Tstg
−55 to +150
°C
ESD − Human Body Model
HBM
3B
V
ESD − Machine Model
MM
C
V
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
†Safe Area Curves are indicated by Figure 1. Both limits are applicable and must
be observed.
1. These ratings are applicable when surface mounted on the minimum pad
sizes recommended.
3
EMITTER
4
4
1 2
1
3
DPAK
CASE 369C
STYLE 1
2
3
IPAK
CASE 369D
STYLE 1
MARKING DIAGRAMS
AYWW
J
xx55G
DPAK
A
Y
WW
Jxx55
G
AYWW
J
xx55G
IPAK
= Assembly Location
= Year
= Work Week
= Device Code
x = 29 or 30
= Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2013
August, 2013 − Rev. 13
1
Publication Order Number:
MJD2955/D
MJD2955 (PNP), MJD3055 (NPN)
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Case
RqJC
6.25
°C/W
Thermal Resistance, Junction−to−Ambient (Note 2)
RqJA
71.4
°C/W
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
2. These ratings are applicable when surface mounted on the minimum pad sizes recommended.
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Max
60
−
−
50
−
−
0.02
2
−
−
0.02
2
−
0.5
20
5
100
−
−
−
1.1
8
−
1.8
2
−
Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 3)
(IC = 30 mAdc, IB = 0)
VCEO(sus)
Collector Cutoff Current
(VCE = 30 Vdc, IB = 0)
ICEO
Collector Cutoff Current
(VCE = 70 Vdc, VEB(off) = 1.5 Vdc)
(VCE = 70 Vdc, VEB(off) = 1.5 Vdc, TC = 150_C)
ICEX
Collector Cutoff Current
(VCB = 70 Vdc, IE = 0)
(VCB = 70 Vdc, IE = 0, TC = 150_C)
ICBO
Emitter Cutoff Current
(VBE = 5 Vdc, IC = 0)
IEBO
Vdc
mAdc
mAdc
mAdc
mAdc
ON CHARACTERISTICS
hFE
DC Current Gain (Note 3)
(IC = 4 Adc, VCE = 4 Vdc)
(IC = 10 Adc, VCE = 4 Vdc)
Collector−Emitter Saturation Voltage (Note 3)
(IC = 4 Adc, IB = 0.4 Adc)
(IC = 10 Adc, IB = 3.3 Adc)
VCE(sat)
Base−Emitter On Voltage (Note 3)
(IC = 4 Adc, VCE = 4 Vdc)
VBE(on)
−
Vdc
Vdc
DYNAMIC CHARACTERISTICS
fT
Current−Gain − Bandwidth Product
(IC = 500 mAdc, VCE = 10 Vdc, f = 500 kHz)
3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
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2
MHz
MJD2955 (PNP), MJD3055 (NPN)
TYPICAL CHARACTERISTICS
PD, POWER DISSIPATION (WATTS)
TA TC
2.5 25
2 20
TC
1.5 15
TA
SURFACE
MOUNT
1 10
0.5
5
0
0
25
50
75
100
125
150
T, TEMPERATURE (°C)
Figure 1. Power Derating
2
500
100
VCE = 2 V
0.7
0.5
25°C
-55°C
50
30
20
0.02
0.05
0.1
0.5
0.2
1
2
5
10
0
0.1
0.2
0.4
0.6
1
2
Figure 2. DC Current Gain
Figure 3. Turn−On Time
4
6
5
TJ = 25°C
VCC = 30 V
IC/IB = 10
IB1 = IB2
3
2
TJ = 25°C
1
VBE(sat) @ IC/IB = 10
VBE @ VCE = 2 V
0.4
0.2
0.06 0.1
IC, COLLECTOR CURRENT (AMP)
t, TIME (s)
μ
V, VOLTAGE (VOLTS)
0.6
td @ VBE(off) ≈ 5 V
IC, COLLECTOR CURRENT (AMP)
1
0.8
0.1
0.03
0.02
1.4
1.2
tr
0.3
0.2
0.07
0.05
10
5
0.01
TJ = 25°C
VCC = 30 V
IC/IB = 10
1
TJ = 150°C
t, TIME (s)
μ
hFE , DC CURRENT GAIN
300
200
ts
0.7
0.5
0.3
0.2
tf
0.1
VCE(sat) @ IC/IB = 10
0.2 0.3
0.5
1
2
3
5
0.07
0.05
0.06 0.1
10
0.2
0.4
0.6
1
IC, COLLECTOR CURRENT (AMP)
IC, COLLECTOR CURRENT (AMP)
Figure 4. “On” Voltages, MJD3055
Figure 5. Turn−Off Time
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3
2
4
6
MJD2955 (PNP), MJD3055 (NPN)
2
TJ = 25°C
1.6
V, VOLTAGE (VOLTS)
VCC
+30 V
25 ms
RC
+11 V
0
1.2
SCOPE
RB
-9 V
VBE(sat) @ IC/IB = 10
0.8
VBE @ VCE = 3 V
D1
51
tr, tf ≤ 10 ns
DUTY CYCLE = 1%
-4 V
0.4
RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
VCE(sat) @ IC/IB = 10
0
0.1
0.2 0.3
0.5
1
2 3
IC, COLLECTOR CURRENT (AMP)
D1 MUST BE FAST RECOVERY TYPE, eg:
1N5825 USED ABOVE IB ≈ 100 mA
MSD6100 USED BELOW IB ≈ 100 mA
10
5
r(t), EFFECTIVE TRANSIENT THERMAL
RESISTANCE (NORMALIZED)
Figure 6. “On” Voltages, MJD2955
1
0.7
0.5
Figure 7. Switching Time Test Circuit
D = 0.5
0.3
0.2
0.2
0.1
0.07
0.05
0.05
0.02
0.01
0.03
0.02
P(pk)
RqJC(t) = r(t) RqJC
RqJC = 6.25°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) qJC(t)
0.1
t1
t2
DUTY CYCLE, D = t1/t2
SINGLE PULSE
0.01
0.01
0.02 0.03 0.05
0.1
0.2 0.3
0.5
1
2 3
5
t, TIME (ms)
10
20
30
50
100
200 300
500
1k
Figure 8. Thermal Response
Forward Bias Safe Operating Area Information
IC, COLLECTOR CURRENT (AMP)
10
5
3
2
100ms
1
1ms
0.5
0.3
5ms
0.1
dc
WIRE BOND LIMIT
THERMAL LIMIT TC = 25°C (D = 0.1)
SECOND BREAKDOWN LIMIT
0.05
0.03
0.02
0.01
0.6
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC − VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 9 is based on TJ(pk) = 150_C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided
TJ(pk) ≤ 150_C. TJ(pk) may be calculated from the data in
Figure 8. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
500ms
TJ = 150°C
1
2
20
4
6
10
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
40
60
Figure 9. Maximum Forward Bias
Safe Operating Area
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4
MJD2955 (PNP), MJD3055 (NPN)
ORDERING INFORMATION
Package Type
Package
Shipping†
MJD2955G
DPAK
(Pb−Free)
369C
75 Units / Rail
MJD2955−1G
IPAK
(Pb−Free)
369D
75 Units / Rail
MJD2955T4G
DPAK
(Pb−Free)
369C
2,500 / Tape & Reel
NJVMJD2955T4G*
DPAK
(Pb−Free)
369C
2,500 / Tape & Reel
MJD3055G
DPAK
(Pb−Free)
369C
75 Units / Rail
MJD3055T4G
DPAK
(Pb−Free)
369C
2,500 / Tape & Reel
NJVMJD3055T4G*
DPAK
(Pb−Free)
369C
2,500 / Tape & Reel
Device
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP
Capable
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5
MJD2955 (PNP), MJD3055 (NPN)
PACKAGE DIMENSIONS
DPAK (SINGLE GAUGE)
CASE 369C
ISSUE D
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL
NOT EXCEED 0.006 INCHES PER SIDE.
5. DIMENSIONS D AND E ARE DETERMINED AT THE
OUTERMOST EXTREMES OF THE PLASTIC BODY.
6. DATUMS A AND B ARE DETERMINED AT DATUM
PLANE H.
C
A
A
E
b3
c2
B
4
L3
Z
D
1
2
H
DETAIL A
3
L4
b2
e
c
b
0.005 (0.13)
M
C
H
L2
GAUGE
PLANE
C
L
SEATING
PLANE
A1
L1
DETAIL A
ROTATED 905 CW
2.58
0.102
5.80
0.228
3.00
0.118
1.60
0.063
6.17
0.243
SCALE 3:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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6
INCHES
MIN
MAX
0.086 0.094
0.000 0.005
0.025 0.035
0.030 0.045
0.180 0.215
0.018 0.024
0.018 0.024
0.235 0.245
0.250 0.265
0.090 BSC
0.370 0.410
0.055 0.070
0.108 REF
0.020 BSC
0.035 0.050
−−− 0.040
0.155
−−−
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
SOLDERING FOOTPRINT*
6.20
0.244
DIM
A
A1
b
b2
b3
c
c2
D
E
e
H
L
L1
L2
L3
L4
Z
MILLIMETERS
MIN
MAX
2.18
2.38
0.00
0.13
0.63
0.89
0.76
1.14
4.57
5.46
0.46
0.61
0.46
0.61
5.97
6.22
6.35
6.73
2.29 BSC
9.40 10.41
1.40
1.78
2.74 REF
0.51 BSC
0.89
1.27
−−−
1.01
3.93
−−−
MJD2955 (PNP), MJD3055 (NPN)
PACKAGE DIMENSIONS
IPAK
CASE 369D
ISSUE C
C
B
V
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
E
R
4
DIM
A
B
C
D
E
F
G
H
J
K
R
S
V
Z
Z
A
S
1
2
3
−T−
SEATING
PLANE
K
J
F
H
D
G
INCHES
MIN
MAX
0.235 0.245
0.250 0.265
0.086 0.094
0.027 0.035
0.018 0.023
0.037 0.045
0.090 BSC
0.034 0.040
0.018 0.023
0.350 0.380
0.180 0.215
0.025 0.040
0.035 0.050
0.155
−−−
MILLIMETERS
MIN
MAX
5.97
6.35
6.35
6.73
2.19
2.38
0.69
0.88
0.46
0.58
0.94
1.14
2.29 BSC
0.87
1.01
0.46
0.58
8.89
9.65
4.45
5.45
0.63
1.01
0.89
1.27
3.93
−−−
3 PL
0.13 (0.005)
M
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
T
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are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,
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For additional information, please contact your local
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MJD2955/D