AOT2916L/AOTF2916L 100V N-Channel MOSFET General Description Product Summary The AOT2916L & AOTF2916L uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON), Ciss and Coss. This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. VDS 100V 23A / 17A ID (at VGS=10V) RDS(ON) (at VGS=10V) < 34mΩ RDS(ON) (at VGS=4.5V) < 43.5mΩ 100% UIS Tested 100% Rg Tested Top View TO-220 D TO-220F G AOT2916L G D S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage Gate-Source Voltage Avalanche Current C Avalanche energy L=0.1mH C TC=25°C Power Dissipation B TC=100°C Power Dissipation A TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case Steady-State Steady-State 12 5 A A 4 IAS 8 A EAS 3 mJ 41.5 23.5 20.5 11.5 2.1 TJ, TSTG RθJA RθJC -55 to 175 AOT2916L 15 60 3.6 www.aosmd.com W W 1.3 Symbol t ≤ 10s V 50 PDSM Junction and Storage Temperature Range Units V 17 16 PD TA=25°C Rev 0 : Oct. 2012 ±20 IDSM TA=70°C AOTF2916L 100 IDM TA=25°C Continuous Drain Current S 23 ID TC=100°C C D AOT2916L VGS TC=25°C Continuous Drain Current Pulsed Drain Current G AOTF2916L S °C AOTF2916L 15 60 6.4 Units °C/W °C/W °C/W Page 1 of 7 AOT2916L/AOTF2916L Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS IDSS Zero Gate Voltage Drain Current Conditions Min ID=250µA, VGS=0V 100 TJ=55°C VDS=0V, VGS=±20V Gate Threshold Voltage VDS=VGS，ID=250µA 1.6 ID(ON) On state drain current VGS=10V, VDS=5V 50 ±100 nA 2 2.7 V 28 34 51 62 VGS=4.5V, ID=3A 35 43.5 28 mΩ S 1 V 23 A VGS=10V, ID=10A Static Drain-Source On-Resistance TJ=125°C gFS Forward Transconductance VDS=5V, ID=10A VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Input Capacitance Ciss Crss Reverse Transfer Capacitance Rg Gate resistance µA 5 Gate-Body leakage current Output Capacitance Units 1 IGSS Coss Max V VDS=100V, VGS=0V VGS(th) RDS(ON) Typ VGS=0V, VDS=50V, f=1MHz VGS=0V, VDS=0V, f=1MHz A 0.75 mΩ 870 pF 68 pF 3.5 pF 7 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 12.5 20 nC Qg(4.5V) Total Gate Charge 5.5 10 nC Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime VGS=10V, VDS=50V, ID=10A VGS=10V, VDS=50V, RL=5Ω, RGEN=3Ω 2.5 nC 2 nC 7.5 ns 3.5 ns 23 ns tf Turn-Off Fall Time 5.5 ns trr Body Diode Reverse Recovery Time IF=10A, dI/dt=500A/µs 20 Qrr Body Diode Reverse Recovery Charge IF=10A, dI/dt=500A/µs 88 ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating. G. The maximum current limited by package. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 0 : Oct. 2012 www.aosmd.com Page 2 of 7 AOT2916L/AOTF2916L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 50 40 10V 6V VDS=5V 4.5V 40 30 30 20 ID(A) ID (A) 4V 125°C 20 3.5V 10 10 Vgs=3.0V 25°C 0 0 0 1 2 3 4 1 5 VDS (Volts) Fig 1: On-Region Characteristics (Note E) 40 3 4 VGS(Volts) Figure 2: Transfer Characteristics (Note E) 5 Normalized On-Resistance 2.6 35 RDS(ON) (mΩ Ω) 2 VGS=4.5V 30 VGS=10V 25 2.4 2.2 VGS=10V ID=10A 2 17 5 2 10 =4.5V 1.8 1.6 1.4 VGS ID=3A 1.2 1 0.8 20 0 0 5 10 15 20 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 200 0 Temperature (°C) Figure 4: On-Resistance vs. Junction 18Temperature (Note E) 80 1.0E+02 ID=10A 1.0E+01 70 40 1.0E+00 125°C IS (A) RDS(ON) (mΩ Ω) 60 50 40 125°C 1.0E-01 1.0E-02 1.0E-03 25°C 25°C 30 1.0E-04 1.0E-05 20 2 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev 0 : Oct. 2012 4 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 7 AOT2916L/AOTF2916L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1200 10 VDS=50V ID=10A 1000 Capacitance (pF) VGS (Volts) 8 6 4 Ciss 800 600 Coss 400 2 200 Crss 0 0 0 3 6 9 12 Qg (nC) Figure 7: Gate-Charge Characteristics 0 15 40 60 80 VDS (Volts) Figure 8: Capacitance Characteristics 100 200 1000.0 TJ(Max)=175°C TC=25°C 10µs 100.0 150 RDS(ON) 10.0 100µs 1ms 10ms 1.0 TJ(Max)=175°C TC=25°C 0.1 DC Power (W) 10µs ID (Amps) 20 17 5 2 10 100 50 0.0 0 0.01 0.1 1 10 100 1000 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area for AOT2916L (Note F) 0.0001 0.001 0.01 0.1 1 10 0 100 1000 Pulse Width (s) 18 Figure 10: Single Pulse Power Rating Junction-to-Case for AOT2916L (Note F) Zθ JC Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJC=3.6°C/W 1 PD 0.1 Single Pulse Ton T 0.01 1E-05 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance for AOT2916L (Note F) Rev 0 : Oct. 2012 www.aosmd.com Page 4 of 7 AOT2916L/AOTF2916L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 300 1000.0 TJ(Max)=175°C TC=25°C 250 100.0 10.0 RDS(ON) Power (W) ID (Amps) 10µs 100µs 1ms 10ms 1.0 1.6 150 2.15 100 DC TJ(Max)=175°C TC=25°C 0.1 200 50 0.0 0 0.01 0.1 1 10 VDS (Volts) 100 1000 0.0001 0.001 0.01 0.1 1 10 100 1000 17 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-to-Case 5 for AOTF2916L (Note F) Figure 9: Maximum Forward Biased Safe Operating Area for AOTF2916L 2 10 Zθ JC Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJC=6.4°C/W 1 0 18 0.1 PD Single Pulse Ton 0.01 1E-05 T 40 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance for AOTF2916L (Note F) Rev 0 : Oct. 2012 www.aosmd.com Page 5 of 7 AOT2916L/AOTF2916L 50 25 40 20 Current rating ID(A) Power Dissipation (W) TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 20 10 15 1.6 2.15 10 5 0 0 0 25 50 75 100 125 150 TCASE (° °C) Figure 12: Power De-rating (Note F) 175 0 25 50 75 100 125 150 TCASE (° °C) Figure 13: Current De-rating (Note F) 175 1000 Power (W) TA=25°C 100 17 5 2 10 10 1 0.001 0.1 0 18 10 Pulse Width (s) Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H) 1000 Zθ JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJA=60°C/W 0.1 PD 0.01 Single Pulse Ton T 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 15: Normalized Maximum Transient Thermal Impedance (Note H) Rev 0 : Oct. 2012 www.aosmd.com Page 6 of 7 AOT2916L/AOTF2916L Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds 90% + Vdd DUT Vgs VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 E AR = 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds Isd Vgs Ig Rev 0 : Oct. 2012 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 7 of 7