Diode Semiconductor Korea HER1610FC---HER1660FC VOLTAGE RANGE: 100 --- 600 V CURRENT: 16 A HIGH EFFICIENCY RECTIFIER FEATURES ITO-220AB Low cos t Low leakage 4.5± 0.2 10.2± 0.2 3.1+0.2 -0.1 1 4.0± 0.3 13.5± 0.5 MECHANICAL DATA Cas e:JEDEC ITO-220AB,molded plastic Term inals : Solderable per ? 3.2± 0.2 PIN 2 3 8.2± 0.2 The plas tic m aterial carries U/L recognition 94V-0 16.5± 0.3 15.0± 0.5 High current capability Eas ily cleaned with alcohol,Is opropanol and s im ilar s olvents φ 3.3± 0.1 Low forward voltage drop 2.6± 0.2 1.4± 0.1 0.6± 0.1 MIL- STD-750,Method 2026 Polarity: As marked 0.6± 0.1 2.6± 0.15 Weight:0.06 ounce, 1.67 grams Dimensions in millimeters Mounting pos ition: Any MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 am bient tem perature unles s otherwis e s pecified. Single phas e,half wave,60 Hz,res is tive or inductive load. For capacitive load,derate by 20%. HER HER HER HER HER HER 1610FC 1620FC 1630FC 1640FC 1650FC 1660FC UNITS Maximum recurrent peak reverse voltage V RR M 100 200 300 400 500 600 V Maximum RMS voltage VRMS 70 140 210 280 350 420 V Maximum DC blocking voltage V DC 100 200 300 400 500 600 V Maximum average f orw ard rectif ied current @TC =100 IF(AV) 16 A IFSM 200 A Peak f orw ard surge current 8.3ms single half -sine-w ave superimposed on rated load @TJ =125 Maximum instantaneous f orw ard voltage VF @ 8.0A Maximum reverse current at rated DC blocking voltage @TA =25 @TA =150 Maximum reverse recovery time (Note1) Operating junction temperature range Storage temperature range 1.3 1.0 V 10 IR t rr 1.7 A 500 50 100 TJ - 55 ----- + 150 TSTG - 55 ----- + 150 ns NOTE: 1. Measured with I F =0.5A, I R=1A, I rr=0.25A. www.diode.kr Diode Semiconductor Korea HER1610FC---HER1660FC FIG.1 -- TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC 50 N 1. 10 N 1. trr +0.5A D.U.T. (+) 25VDC (approx) (-) PULSE GENERATOR (NOTE2) 0 -0.25A OSCILLOSCOPE (NOTE 1) 1 NONINDUCTIVE -1.0A 1cm SET TIME BASE FOR 25/50 ns/cm NOTES:1.RISE TIME = 7ns MAX.INPUT IMPEDANCE =1M . 22pF. JJJJ 2.RISE TIME =10ns MAX.SOURCE IMPEDANCE=50 . FIG.2 -- TYPICAL FORWARD CHARACTERISTIC FIG.3 -- PEAK FORWARD SURGE CURRENT 1 0.1 0.01 .4 Tj=25oC Pulse Width=300 s 1% Duty Cycle .6 .8 1.0 1.2 1.4 1.6 1.8 200 TJ=125℃ 8.3ms Single Half Sine-Wave AMPERES PEAK FORWARD SURGE CURRENT HE R1 61 0F C~ HE R1 HE 62 0F R1 C 63 0F CHE R1 HE 64 R1 0F 65 C 0F CHE R1 66 0F C 10 0 1 2 4 8 10 20 40 60 80 100 NUMBER OF CYCLES AT 60Hz INSTANTANEOUS FORWARD VOLTAGE, VOLTS z FIG.4-FORWORD DERATING CURVE 24 20 AMPERES AVERAGE FORWARD CURRENT AMPERES INSTANTANEOUS FORWARD CURRENT 100 16 12 Single Phase Half Wave 60HZ Resistive or Inductive Load 8.0 4.0 0 0 25 50 75 100 125 150 175 CASE TEMPERATURE, www.diode.kr