AO3407 30V P-Channel Enhancement Mode MOSFET VDS= -30V RDS(ON), Vgs@-10V, Ids@ 4.1A < 64.5m Ω RDS(ON), [email protected], [email protected] < 87m Ω Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Package Dimensions D SOT-23-3L G A B C D E Millimeter Min. Max. 2.70 3.10 2.65 2.95 1.50 1.70 0.35 0.50 0 0.10 F 0.45 REF. S REF. 0.55 Millimeter G H K J L Min. Max. 1.90 REF. 1.00 1.30 0.10 0.20 0.40 0.85 1.15 M 0° 10° Maximum Ratings and Thermal Characteristics (TA = 25oC unless otherwise noted) Symbol Limit Drain-Source Voltage VDS -30 Gate-Source Voltage VGS ± 20 ID 5.3 IDM -20 Parameter Continuous Drain Current Pulsed Drain Current o TA = 25 C Maximum Power Dissipation o TA = 75 C PD TJ, Tstg Operating Junction and Storage Temperature Range Junction-to-Ambient Thermal Resistance (PCB mounted) RθJA Unit V A 1.4 W 1 o -55 to 150 125 o C C/W １ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ AO3407 30V P-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TA = 25oC unless otherwise noted) Parameter Symbol Test Condition Min. Typ. Miax. Unit Static Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = -250uA -30 V Drain-Source On-State Resistance RDS(on) VGS = -10V, ID = -4.1A 48.0 64.5 Drain-Source On-State Resistance RDS(on) VGS = -4.5V, ID = -3A 64.0 87.0 VGS(th) VDS =VGS, ID = -250uA Zero Gate Voltage Drain Current IDSS Gate Body Leakage mΩ Drain-Source On-State Resistance Gate Threshold Voltage Forward Transconductance -3.0 V VDS = -24V, VGS = 0V -1 uA IGSS VGS = ± 20V, VDS = 0V ± 100 nA gfs VDS = -5V, ID = - 4 A -1.0 -1 5.5 S Dynamic Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-On Delay Time td(on) Turn-On Rise Time Turn-Off Delay Time tr td(off) Turn-Off Fall Time tf Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS = -15V , ID = -5.3A VGS = -10V 9.35 nC 3.43 1.7 10.8 VDD = -15V, RL=15Ω ID = -1 A, VGEN = -10 V RG = 6Ω VDS = -15 V, VGS = 0V f = 1.0 MHz 2.33 ns 22.53 3.87 551.57 pF 90.96 60.79 Source-Drain Diode Max. Diode Forward Current Diode Forward Voltage IS VSD IS = 2.6 A, VGS = 0V -2.6 A -1.3 V Note: Pulse test: pulse width <= 300us, duty cycle<= 2% ２ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ AO3407 30V P-Channel Enhancement Mode MOSFET ３ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５