EC93C46A Three-wire Serial EEPROM General Description Features The EC93C46A provides 1024 bits of serial electrically erasable programmable read only memory (EEPROM) organized as 64 words of 16 bits each, when the ORG pin is connected to VCC and 128 words of 8 bits each when it is tied to ground. The EC93C46A is available in spacesaving PDIP-8, SOP-8, TSSOP-8, MSOP-8, and DFN-8 packages. The EC93C46A is enabled through the Chip Select pin (CS), and accessed via a 3-wire serial interface consisting of Data Input (DI), Data Output (DO), and Shift Clock (SK) signals. Upon receiving a Read instruction at DI, the address is decoded and the data is clocked out serially on the data output pin DO. The WRITE cycle is completely self-timed and no separate erase cycle is required before write. The Write cycle is only enabled when it is in the Erase/Write Enable state. When CS is brought “high” following the initiation of a write cycle, the DO pin outputs the Ready/Busy status. Low-voltage Operation - 1.7V (Vcc = 1.7V to 5.5V) Three-wire Serial Interface 2 MHz Clock Rate(5V) Compatibility Self-timed Write Cycle (5 ms max) High-reliability - Endurance: 1 Million Write Cycles - Data Retention: 100 Years PDIP-8, SOP-8, TSSOP-8, MSOP-8, and DFN-8 packages. Pin Configuration SOP-8 Top view Pin Name CS SK DI DO GND VCC ORG DC Functions Chip Select Serial Data Clock Serial Data Input Serial Data Output Ground Power Supply Internal Organization Don't Connect E-CMOS Corp. (www.ecmos.com.tw) TSSOP-8 MSOP-8 Top view Top view DFN-8 PDIP-8 Bottom view Top view Page 1 of 14 2G30N-Rev.F001 EC93C46A Three-wire Serial EEPROM Block Diagram Notes: When the ORG pin is connected to VCC, the “x 16” organization is selected. When it is connected to ground, the “x 8” organization is selected. If the ORG pin is left unconnected and the application does not load the input beyond the capability of the internal 1 Meg ohm pullup, then the “x 16” organization is selected. E-CMOS Corp. (www.ecmos.com.tw) Page 2 of 14 2G30N-Rev.F001 EC93C46A Three-wire Serial EEPROM Functional Descriptions The EC93C46A is accessed via a simple and versatile three-wire serial communication interface. Device operation is controlled by seven instructions issued by the host processor. A valid instruction starts with a rising edge of CS and consists of a start bit (logic“1”) followed by the appropriate op code and the desired memory address location. Instruction set for the EC93C46A Instruction SB OP Code Address x8 x16 READ 1 10 A6 - A0 A5 - A0 EWEN 1 00 11XXXXX 11XXXX ERASE WRITE 1 1 11 01 A6 - A0 A6 - A0 A5 - A0 A5 - A0 ERAL 1 00 10XXXXX 10XXXX WRAL 1 00 01XXXXX 01XXXX EWDS 1 00 00XXXXX 00XXXX Notes: Data x8 Comments x16 D7 – D0 D15 – D0 D7 – D0 D15 – D0 Reads data stored in memory, at specified address Write enable must precede all programming modes Erase memory location An - A0 Writes memory location An - A0 Erases all memory locations. Valid only at Vcc = 4.5V to 5.5V Writes all memory locations. Valid only at Vcc = 4.5V to 5.5V Disables all programming instructions The X’s in the address field represent don’t care values and must be clocked. READ (READ): The Read (READ) instruction contains the address code for the memory location to be read. After the instruction and address are decoded, data from the selected memory location is available at the serial output pin DO. Output data changes are synchronized with the rising edges of serial clock SK. It should be noted that a dummy bit (logic “0”) precedes the 8- or 16-bit data output string. ERASE/WRITE (EWEN): To assure data integrity, the part automatically goes into the Erase/Write Disable (EWDS) state when power is first applied. An Erase/Write Enable(EWEN) instruction must be executed first before any programming instructions can be carried out. Please note that once in the EWEN state, programming remains enabled until an EWDS instruction is executed or VCC power is removed from the part. ERASE (ERASE): The Erase (ERASE) instruction programs all bits in the specified memory location to the logical “1” state. The self-timed erase cycle starts once the ERASE instruction and address are decoded. The DO pin outputs the Ready/Busy status of the part if CS is brought high after being kept low for a minimum of 250 ns (TCS). A logic “1” at pin DO indicates that the selected memory location has been erased, and the part is ready for another instruction. WRITE (WRITE): The Write (WRITE) instruction contains the 8 or 16 bits of data to be written into the specified memory location. The self-timed programming cycle, tWP, starts after the last bit of data is received at serial data input pin DI. The DO pin outputs the Ready/Busy status of the part if CS is brought high after being kept low for a minimum of 250 ns (TCS). A logic “0” at DO indicates that programming is still in progress. A logic “1” indicates that the memory location at the specified address has been written with the data pattern contained in the instruction and the part is ready for further instructions. A Ready/Busy status cannot be obtained if the CS is brought high after the end of the selftimed programming cycle, TWP. ERASE ALL (ERAL): The Erase All (ERAL) instruction programs every bit in the memory array to the logic “1” state and is primarily used for testing purposes. The DO pin outputs the Ready/Busy status of the part if CS is brought high after being kept low for a minimum of 250 ns (TCS). The ERAL instruction is valid only at VCC = 5.0V ± 10%. E-CMOS Corp. (www.ecmos.com.tw) Page 3 of 14 2G30N-Rev.F001 EC93C46A Three-wire Serial EEPROM Function Descriptions WRITE ALL (WRAL): The Write All (WRAL) instruction programs all memory locations with the data patterns specified in the instruction. The DO pin outputs the Ready/Busy status of the part if CS is brought high after being kept low for a minimum of 250 ns (TCS). The WRAL instruction is valid only at VCC = 5.0V ± 10%. ERASE/WRITE DISABLE (EWDS): To protect against accidental data disturb, the Erase/Write Disable (EWDS) instruction disables all programming modes and should be executed after all programming operations. The operation of the Read instruction is independent of both the EWEN and EWDS instructions and can be executed at any time. Ordering Information Marking Information Package Type SOP-8 TSSOP-8 MSOP-8 PDIP-8 Part Number EC93C46ANM1GX EC93C46ANE1GX EC93C46ANR1GX EC93C46ANP1GX DFN-8 EC93C46ANF2GX Marking Marking Information 93C46A LLLLL YYWWT LLLLL is the last five numbers of wafer lot number YYWW is Date Code. T is tracking Code ,T=X C46A LLLL LLLL is the last four numbers of wafer lot number Available Package Types Part Number EC93C46A SOP-8 V E-CMOS Corp. (www.ecmos.com.tw) TSSOP-8 V MSOP-8 V Page 4 of 14 DFN-8 V PDIP-8 V 2G30N-Rev.F001 EC93C46A Three-wire Serial EEPROM Electrical Characteristics Absolute Maximum Ratings DC Supply Voltage --------------------------------------------------------------------------------------- -0.3V to +6.5V Input / Output Voltage ----------------------------------------------------------------------------------- GND-0.3V to VCC+0.3V Operating Ambient Temperature --------------------------------------------------------------------- -40°C to +85°C Storage Temperature ------------------------------------------------------------------------------------ -65°C to +150°C Comments Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to this device. These are stress ratings only. Functional operation of this device at these or any other conditions above those indicated in the operational sections of this specification is not implied or intended. Exposure to the absolute maximum rating conditions for extended periods may affect device reliability. DC Characteristics Applicable over recommended operating range from: TA = −40°C to +85°C, V (unless otherwise noted) Symbol Parameter VCC1 Supply Voltage VCC2 Supply Voltage VCC3 Supply Voltage ICC ISB1 ISB2 ISB3 IIL(1) IIL(2) IOL VIL1(3) VIH1(3) VIL2(3) VIH2(3) VIL3(3) VIH3(3) VOL1 VOH1 VOL2 VOH2 Supply Current Standby Current Standby Current Standby Current Input Leakage Input Leakage Output Leakage Input Low Voltage Input High Voltage Input Low Voltage Input High Voltage Input Low Voltage Input High Voltage Output Low Voltage Output High Voltage Output Low Voltage Output High Voltage Test Condition Read at 1.0 MHz VCC = 5.0V Write at 1.0 MHz VCC = 1.7V CS = 0V VCC = 2.7V CS = 0V VCC = 5.0V CS = 0V VIN = 0V to VCC VIN = 0V to VCC VIN = 0V to VCC 2.7V ≤ VCC ≤ 5.5V 1.8V ≤ VCC ≤ 2.7V VCC=1.7V 2.7V≤VCC≤5.5V 1.7V≤VCC≤2.7V IOL = 2.1mA IOH = -0.4mA IOL = 0.15mA IOH = -100µA CC = +1.7V to +5.5V Min 1.7 2.7 4.5 -0.3 2.0 -0.5 VCCx0.7 -0.5 VCCx0.7 2.4 VCC-0.2 Typ 0.5 2 0.1 2.0 0.1 - Max 5.5 5.5 5.5 2.0 3.0 1.0 1.0 1.0 1.0 3.0 1.0 0.8 VCC+0.3 VCCx0.3 VCC+0.3 VCCx0.2 VCC+0.3 0.4 0.2 - Units V V V mA mA µA µA µA µA µA µA V V V V V V V V V V Notes: 1. DI、CS、SK input pin 2. ORG input pin 3. VIL min and VIH max are reference only and are not tested. Pin Capacitance Applicable over recommended operating range from TA = 25°C, f = 1.0 MHz, V CC = +1.7V (unless otherwise noted) Symbol COUT CIN Test Conditions Output Capacitance (DO) Input Capacitance (CS, SK, DI,ORG) E-CMOS Corp. (www.ecmos.com.tw) Page 5 of 14 Max 5 5 Unit pF pF Conditions VOUT = 0V VIN = 0V 2G30N-Rev.F001 EC93C46A Three-wire Serial EEPROM AC Characteristics Applicable over recommended operating range from TA = −40°C to + 85°C, V Gate and 100pF (unless otherwise noted) Symbol Parameter Test Condition 4.5V ≤ VCC ≤ 5.5V SK Clock Frequency 2.7V ≤ VCC ≤ 5.5V 1.7V ≤ VCC ≤ 5.5V 4.5V ≤ VCC ≤ 5.5V SK High Time 2.7V ≤ VCC ≤ 5.5V 1.7V ≤ VCC ≤ 5.5V 4.5V ≤ VCC ≤ 5.5V SK Low Time 2.7V ≤ VCC ≤ 5.5V 1.7V ≤ VCC ≤ 5.5V 4.5V ≤ VCC ≤ 5.5V Minimum CS Low Time 2.7V ≤ VCC ≤ 5.5V 1.7V ≤ VCC ≤ 5.5V 4.5V ≤ VCC ≤ 5.5V CS Setup Time Relative to SK 2.7V ≤ VCC ≤ 5.5V 1.7V ≤ VCC ≤ 5.5V 4.5V ≤ VCC ≤ 5.5V DI Setup Time Relative to SK 2.7V ≤ VCC ≤ 5.5V 1.7V ≤ VCC ≤ 5.5V CS Hold Time Relative to SK 4.5V ≤ VCC ≤ 5.5V DI Hold Time Relative to SK 2.7V ≤ VCC ≤ 5.5V 1.7V ≤ VCC ≤ 5.5V 4.5V ≤ VCC ≤ 5.5V Output Delay to “1” AC Test 2.7V ≤ VCC ≤ 5.5V 1.7V ≤ VCC ≤ 5.5V 4.5V ≤ VCC ≤ 5.5V Output Delay to “0” AC Test 2.7V ≤ VCC ≤ 5.5V 1.7V ≤ VCC ≤ 5.5V 4.5V ≤ VCC ≤ 5.5V CS to Status Valid AC Test 2.7V ≤ VCC ≤ 5.5V 1.7V ≤ VCC ≤ 5.5V 4.5V ≤ VCC ≤ 5.5V CS to DO in High AC Test 2.7V ≤ VCC ≤ 5.5V Impedance CS = VIL 1.7V ≤ VCC ≤ 5.5V Write Cycle Time - fSK tSKH tSKL tCS tCSS tDIS tCSH tDIH tPD1 tPD0 tSV tDF tWP (1) Endurance 5.0V, 25°C - CC = +1.7V to + 5.5V, CL = 1 TTL Min 0 0 0 250 250 1000 250 250 1000 250 250 1000 50 50 200 100 100 400 0 100 100 400 - Typ - 1.5 Max 2 1 0.25 250 250 1000 250 250 1000 250 250 1000 100 100 400 5 1M - - - Units MHz ns ns ns ns ns ns ns ns ns ns ns ms Write Cycle Notes: 1. This parameter is characterized and is not 100% tested. E-CMOS Corp. (www.ecmos.com.tw) Page 6 of 14 2G30N-Rev.F001 EC93C46A Three-wire Serial EEPROM Timing Diagrams Synchronous Data Timing Organization Key for Timing Diagrams I/O AN DN E-CMOS Corp. (www.ecmos.com.tw) EC93C46A(1K) X 16 A5 D15 X8 A6 D7 Page 7 of 14 2G30N-Rev.F001 EC93C46A Three-wire Serial EEPROM READ Timing EWEN Timing EWDS Timing WRITE Timing E-CMOS Corp. (www.ecmos.com.tw) Page 8 of 14 2G30N-Rev.F001 EC93C46A Three-wire Serial EEPROM WRAL Timing ERASE Timing ERAL Timing E-CMOS Corp. (www.ecmos.com.tw) Page 9 of 14 2G30N-Rev.F001 EC93C46A Three-wire Serial EEPROM Mechanical Dimensions OUTLINE DRAWING PDIP - 8 Available package types : EC93C46A Top View Side View Section B - B E-CMOS Corp. (www.ecmos.com.tw) End View COMMON DIMENSIONS (Unit of Measure = mm) SYMBOL A A1 A2 A3 b b1 B c c1 D E1 e eA eB eC L Page 10 of 14 MIN 3.60 0.51 3.10 1.50 0.44 0.43 MAX 4.00 3.50 1.70 0.53 0.48 1.52 BSC 0.25 0.24 9.05 6.15 0.31 0.26 9.45 6.55 2.54 BSC 7.62 BSC 7.62 0 3.00 9.50 0.94 - 2G30N-Rev.F001 EC93C46A Three-wire Serial EEPROM Mechanical Dimensions OUTLINE DRAWING SOP - 8 Available package types： ：EC93C46A Top View Side View E-CMOS Corp. (www.ecmos.com.tw) End View COMMON DIMENSIONS (Unit of Measure = mm) SYMBOL A A1 B C D MIN 1.35 0.10 0.31 0.17 4.70 MAX 1.75 0.25 0.51 0.25 5.10 E1 3.80 4.00 E e L θ 5.79 6.20 Page 11 of 14 1.27 BSC 0.40 0° 1.27 8° 2G30N-Rev.F001 EC93C46A Three-wire Serial EEPROM Mechanical Dimensions OUTLINE DRAWING TSSOP - 8 Available package types： ：EC93C46A Top View Side View End View COMMON DIMENSIONS (Unit of Measure = mm) SYMBOL D E E1 A A2 b e L L1 θ E-CMOS Corp. (www.ecmos.com.tw) Page 12 of 14 MIN 2.80 6.20 4.20 0.80 0.19 MAX 3.20 6.60 4.60 1.20 1.15 0.30 0.65 BSC 0.45 0.75 1.00 BSC 0° 8° 2G30N-Rev.F001 EC93C46A Three-wire Serial EEPROM Mechanical Dimensions OUTLINE DRAWING MSOP - 8 Available package types : EC93C46A End View Top View Side View Section B -B E-CMOS Corp. (www.ecmos.com.tw) COMMON DIMENSIONS (Unit of Measure = mm) SYMBOL A A1 A2 A3 b b1 c c1 D E E1 e L L1 θ Page 13 of 14 MIN 0.05 0.75 0.30 0.29 0.28 0.15 0.14 2.90 4.70 2.90 MAX 1.10 0.15 0.95 0.40 0.38 0.33 0.20 0.16 3.10 5.10 3.10 0.65 BSC 0.40 0.70 0.95 BSC 0° 8° 2G30N-Rev.F001 EC93C46A Three-wire Serial EEPROM Mechanical Dimensions OUTLINE DRAWING DFN - 8 Available package types： ：EC93C46A Top View End View Side View Bottom View COMMON DIMENSIONS (Unit of Measure = mm) SYMBOL A A1 b c D D2 e Nd E E2 L h MIN 0.70 0.18 0.18 1.90 MAX 0.80 0.05 0.30 0.25 2.10 1.50 REF 0.50 BSC 1.50 BSC 2.90 3.10 1.60 BSC 0.30 0.20 E-CMOS Corp. (www.ecmos.com.tw) 0.50 0.30 Page 14 of 14 2G30N-Rev.F001