Filtronic FPD1500DFN Low noise high linearity packaged phemt Datasheet

FPD1500DFN
Datasheet v2.1
LOW NOISE HIGH LINEARITY PACKAGED PHEMT
PACKAGE:
FEATURES (1850MHZ):
•
•
•
•
•
•
27 dBm Output Power (P1dB)
18 dB Small-Signal Gain (SSG)
1.2 dB Noise Figure
42 dBm Output IP3
45% Power-Added Efficiency
RoHS compliant (Directive 2002/95/EC)
GENERAL DESCRIPTION:
TYPICAL APPLICATIONS:
The FPD1500DFN is a packaged depletion
mode AlGaAs/InGaAs pseudomorphic High
Electron Mobility Transistor (pHEMT). It
utilizes a 0.25 µm x 750 µm Schottky barrier
Gate, defined by high-resolution stepperbased photolithography. The recessed and
offset Gate structure minimizes parasitics to
optimize performance, with an epitaxial
structure designed for improved linearity over
a range of bias conditions and input power
levels.
•
•
•
Drivers or output stages in PCS/Cellular
base station transmitter amplifiers
High intercept-point LNAs
WLL and WLAN systems, and other types
of wireless infrastructure systems.
ELECTRICAL SPECIFICATIONS:
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
Power at 1dB Gain Compression
P1dB
VDS = 5 V; IDS = 50% IDSS
27
dBm
Small-Signal Gain
SSG
VDS = 5 V; IDS = 50% IDSS
18
dB
Power-Added Efficiency
PAE
VDS = 5 V; IDS = 50% IDSS;
45
%
1.2
dB
Matched for optimal power
40
dBm
Matched for best IP3
42
POUT = P1dB
Noise Figure
NF
VDS = 5 V; IDS = 50% IDSS
Output Third-Order Intercept Point
IP3
VDS = 5V; IDS = 50% IDSS
(from 15 to 5 dB below P1dB)
Saturated Drain-Source Current
IDSS
VDS = 1.3 V; VGS = 0 V
375
465
550
mA
Maximum Drain-Source Current
IMAX
VDS = 1.3 V; VGS ≅ +1 V
750
mA
Transconductance
GM
VDS = 1.3 V; VGS = 0 V
400
mS
Gate-Source Leakage Current
IGSO
VGS = -5 V
1
15
μA
Pinch-Off Voltage
|VP|
VDS = 1.3 V; IDS = 1.5 mA
0.7
0.9
1.3
V
Gate-Source Breakdown Voltage
|VBDGS|
IGS = 1.5 mA
12
16
V
Gate-Drain Breakdown Voltage
|VBDGD|
IGD = 1.5 mA
12
16
V
Note: TAMBIENT = 22°; RF specification measured at f = 1850 MHz using CW signal (except as noted)
1
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Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Fax: +44 (0) 1325 306177
Email: [email protected]
Website: www.filtronic.com
FPD1500DFN
Datasheet v2.1
1
ABSOLUTE MAXIMUM RATING :
PARAMETER
SYMBOL
TEST CONDITIONS
ABSOLUTE MAXIMUM
Drain-Source Voltage
VDS
-3V < VGS < +0V
8V
Gate-Source Voltage
VGS
0V < VDS < +8V
-3V
Drain-Source Current
IDS
For VDS > 2V
IDss
Gate Current
IG
Forward or reverse current
15mA
RF Input Power
PIN
Under any acceptable bias state
350mW
Channel Operating Temperature
TCH
Under any acceptable bias state
175°C
Storage Temperature
TSTG
Non-Operating Storage
-40°C to 150°C
Total Power Dissipation
PTOT
See De-Rating Note below
2.2W
Comp.
Under any bias conditions
5dB
2
Gain Compression
3
Simultaneous Combination of Limits
2 or more Max. Limits
Notes:
1
TAmbient = 22°C unless otherwise noted; exceeding any one of these absolute maximum ratings may cause
permanent damage to the device
2
Max. RF Input Limit must be further limited if input VSWR > 2.5:1
3
Users should avoid exceeding 80% of 2 or more Limits simultaneously
4
Total Power Dissipation defined as: PTOT ≡ (PDC + PIN) – POUT,
where PDC: DC Bias Power, PIN: RF Input Power, POUT: RF Output Power
Total Power Dissipation to be de-rated as follows above 22°C:
PTOT= 2.2 - (0.0167W/°C) x TPACK
where TPACK= source tab lead temperature above 22°C
(coefficient of de-rating formula is the Thermal Conductivity)
Example: For a 65°C carrier temperature: PTOT = 2.2W – (0.0167 x (65 – 22)) = 1.48mW
5
The use of a filled via-hole directly beneath the exposed heatsink tab on the bottom of the package is strongly
recommended to provide for adequate thermal management. Ideally the bottom of the circuit board is affixed to a
heatsink or thermal radiator
BIASING GUIDELINES:
•
•
•
Active bias circuits provide good performance stabilization over variations of operating
temperature, but require a larger number of components compared to self-bias or dual-biased.
Such circuits should include provisions to ensure that Gate bias is applied before Drain bias,
otherwise the pHEMT may be induced to self-oscillate
Dual-bias circuits are relatively simple to implement, but will require a regulated negative voltage
supply for depletion-mode devices.
For standard Class A operation, a 50% of IDSS bias point is recommended. A small amount of
RF gain expansion prior to the onset of compression is normal for this operating point. Note that
pHEMTs, since they are “quasi- E/D mode” devices, exhibit Class AB traits when operated at 50%
of IDSS. To achieve a larger separation between P1dB and IP3, an operating point in the 25% to
33% of IDSS range is suggested. Such Class AB operation will not degrade the IP3 performance.
2
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Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Fax: +44 (0) 1325 306177
Email: [email protected]
Website: www.filtronic.com
FPD1500DFN
Datasheet v2.1
TYPICAL TUNED RF PERFORMANCE:
FPD1500DFN Biased @ VD = 5V ID = 50%IDSS
FPD1500DFN Biased @ VD = 5V, ID = 50%IDSS
35
1.5
MSG
10
0.75
0.5
0.25
5
0
10.4 11.4 12
0.5
18.0
17.0
SSG
(dB)
P1dB (dBm)
4.5
5
5.5
6
1.60
1.30
1.00
0.70
N.F.
(dB)
0.40
90
80
70
60
50
40
30
20
0
10
15.0
-10
2.5
3
3.5
4
Frequency (GHz)
90
19.0
-20
2
1.90
-20
20.0
Noise Figure (dB)
32.0
31.0
30.0
29.0
28.0
27.0
26.0
25.0
24.0
23.0
22.0
P1dB (dBm)
21.0
SSG (dB)
1.5
Biased @ 5V, 33%IDSS
Data taken on Eval board @ 1.85GHz
Biased @ 5V, 50%IDSS
Data taken on Eval Board at 1.85GHz
16.0
1
80
9.4
60
8.4
50
5.4 6.4 7.4
Frequency (GHz)
40
4.4
30
3.4
20
2.4
10
1.4
70
0
0.4
0
15
1
-10
&
20
1.25
S21
Noise Fugure (dB)
MSG
25
Mag S21
30
Temperature (C)
Temperature (C)
BIAS RESPONSE:
Gain & P1dB vs Vd Taken @ IDS = 50% IDSS
Gain & P1dB vs % IDSS Taken @ VD = 5V
18.0
32.0
18.0
30.0
17.0
28.0
30.0
15.0
20.0
18.0
SSG
(dB)
P1dB (dBm)
12.0
45%
35%
20.0
15%
8.00
7.50
7.00
6.50
6.00
5.50
5.00
4.50
4.00
22.0
12.0
10.0
3.50
SSG (dB)
P1dB (dBm)
13.0
14.0
12.0
3.00
24.0
14.0
16.0
13.0
2.50
26.0
15.0
25%
14.0
16.0
65%
22.0
P1dB (dBm)
24.0
2.00
SSG (dB)
16.0
SSG (dB)
26.0
P1dB (dBm)
28.0
55%
17.0
%IDSS
Vd (V)
3
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Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Fax: +44 (0) 1325 306177
Email: [email protected]
Website: www.filtronic.com
FPD1500DFN
Datasheet v2.1
TYPICAL OUTPUT PLANE CONTOURS (VDS = 5V, IDS = 50%IDSS):
Swp Max
114
2.
0
0. 6
0.8
1.0
FPD1500DFN POWER CONTUORS 900MHz
0.
0
3.
4
4.0
5 .0
0.2
10.0
5.0
4.0
3.0
2.0
1.0
0.8
0.6
0.4
0
0.2
10.0
28dBm
27dBm
-10 .0
21dBm
26dBm
25dBm
24dBm
23dBm
-4 .
0
-3
.0
.4
Swp Min
1
-1.0
-0.8
-0.
6
.0
-2
-0
22dBm
- 5. 0
- 0.2
Swp Max
159
2.
0
0.6
0.8
1.0
FPD1500DFN POWER CONTUORS 1850MHz
0.
4
3 .0
4. 0
5.0
0.2
5.0
4.0
3.0
2.0
1.0
0.8
0.6
0.4
0.2
0
10.0
10.0
28dBm
27dBm
-10.0
26dBm
21dBm
25dBm
24dBm
22dBm
-5.0
- 4.
- 0.2
0
23dBm
-3
.0
-1.0
-0.8
-0.
6
.0
-2
.4
-0
Swp Min
1
4
Tel: +44 (0) 1325 301111
Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Fax: +44 (0) 1325 306177
Email: [email protected]
Website: www.filtronic.com
FPD1500DFN
Datasheet v2.1
TYPICAL I-V CHARACTERISTICS:
DC IV Curves FPD750SOT89
0.30
Drain-Source Current (A)
0.25
0.20
VG=-1.50
VG=-1.25V
VG=-1.00V
VG=-0.75V
VG=-0.50V
VG=-0.25V
VG=0V
0.15
0.10
Recommendation: Traditionally a device’s IDSS
rating (IDS at VGS = 0V) was used as a predictor of
RF power, and for MESFETs there is a correlation
between IDSS and P1dB (power at 1dB gain
compression). For pHEMTs it can be shown that
there is no meaningful statistical correlation
between IDSS and P1dB; specifically a linear
regression analysis shows r2 < 0.7, and the
regression fails the F-statistic test.
IDSS is
sometimes useful as a guide to circuit tuning, since
the S22 does vary with the quiescent operating
point IDS.
0.05
0.00
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
Note: The recommended method for measuring
IDSS, or any particular IDS, is to set the Drain-Source
voltage (VDS) at 1.3V. This measurement point
avoids the onset of spurious self-oscillation which
would normally distort the current measurement
(this effect has been filtered from the I-V curves
presented above). Setting the VDS > 1.3V will
generally
cause
errors
in
the
current
measurements, even in stabilized circuits.
6.0
Drain-Source Voltage (V)
5
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Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Fax: +44 (0) 1325 306177
Email: [email protected]
Website: www.filtronic.com
FPD1500DFN
Datasheet v2.1
NOISE PARAMETERS:
Bias 3V, 50%IDSS
Bias 5V, 25%IDSS
Γopt
Freq
(GHz)
Mag
Angle
0.900
1.800
2.000
2.200
2.400
2.600
2.800
3.000
3.500
4.000
4.500
5.000
5.500
6.000
0.345
0.384
0.401
0.448
0.463
0.483
0.482
0.503
0.487
0.513
0.506
0.521
0.563
0.570
18.350
86.350
97.050
116.200
129.200
137.900
146.800
149.850
160.750
172.500
177.500
-172.250
-160.450
-153.650
Γopt
Freq
Rn/50
0.029
0.043
0.039
0.032
0.031
0.034
0.022
0.022
0.023
0.020
0.035
0.027
0.031
0.041
Rn/50
(GHz)
Mag
Angle
0.900
1.800
2.000
2.200
2.400
2.600
2.800
3.000
3.500
4.000
4.500
5.000
5.500
6.000
0.367
0.416
0.445
0.454
0.450
0.502
0.467
0.475
0.478
0.495
0.490
0.497
0.544
0.558
27.250
75.400
80.800
103.150
125.500
129.550
135.950
142.050
151.550
163.200
168.500
179.700
-168.300
-161.200
0.030
0.046
0.042
0.035
0.034
0.028
0.023
0.023
0.024
0.020
0.034
0.024
0.023
0.028
Bias 5V, 50%IDSS
Γopt
Freq
Rn/50
(GHz)
Mag
Angle
0.900
1.800
2.000
2.200
2.400
2.600
2.800
3.000
3.500
4.000
4.500
5.000
5.500
6.000
0.181
0.283
0.346
0.400
0.426
0.450
0.445
0.485
0.470
0.492
0.500
0.509
0.554
0.568
73.550
91.250
100.550
119.700
131.450
136.800
148.400
156.550
163.800
175.300
-178.800
-169.350
-158.100
-150.900
0.038
0.051
0.047
0.038
0.036
0.039
0.028
0.026
0.029
0.026
0.042
0.036
0.042
0.054
6
Tel: +44 (0) 1325 301111
Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Fax: +44 (0) 1325 306177
Email: [email protected]
Website: www.filtronic.com
FPD1500DFN
Datasheet v2.1
S-PARAMETERS:
Biased @ 5V, 50%IDSS
FREQ[GHz]
S11m
S11a
S21m
S21a
S12m
S12a
S22m
S22a
0.500
1.000
1.500
2.000
2.500
3.000
3.500
4.000
4.500
5.000
5.500
6.000
6.500
7.000
7.500
8.000
8.500
9.000
9.500
10.000
10.500
11.000
11.500
12.000
0.841
0.770
0.770
0.760
0.775
0.773
0.768
0.765
0.759
0.753
0.751
0.761
0.766
0.769
0.760
0.756
0.759
0.771
0.768
0.775
0.803
0.800
0.808
0.817
-91.2
-134.6
-157.8
-173.0
176.0
168.8
163.2
158.2
152.8
145.2
138.5
131.1
124.7
118.9
113.7
108.6
103.5
97.8
93.1
87.6
82.4
76.0
69.5
63.9
19.661
12.134
8.561
6.590
5.303
4.514
3.898
3.471
3.160
2.878
2.625
2.407
2.204
2.018
1.845
1.717
1.643
1.573
1.510
1.453
1.419
1.328
1.275
1.208
126.2
102.2
87.3
77.3
68.3
61.0
53.4
46.6
39.0
32.1
24.9
17.7
10.3
3.7
-2.6
-7.8
-13.6
-19.1
-25.8
-32.5
-39.8
-47.2
-53.2
-59.7
0.023
0.031
0.037
0.040
0.045
0.051
0.056
0.064
0.069
0.076
0.084
0.089
0.092
0.097
0.100
0.105
0.113
0.121
0.136
0.145
0.155
0.164
0.170
0.177
51.0
41.1
38.0
35.6
38.0
35.7
35.0
32.2
32.4
29.2
24.8
20.4
14.8
10.3
6.7
6.2
3.1
-1.7
-5.3
-12.3
-17.9
-22.5
-27.9
-32.2
0.294
0.308
0.317
0.324
0.339
0.345
0.349
0.355
0.365
0.372
0.377
0.380
0.385
0.388
0.392
0.396
0.408
0.418
0.428
0.451
0.465
0.475
0.489
0.502
-137.3
-159.7
-168.0
-175.2
179.6
173.0
166.4
159.1
154.0
148.1
145.1
140.3
135.0
129.1
123.8
120.8
117.8
114.3
110.0
104.3
97.9
91.1
86.5
79.2
7
Tel: +44 (0) 1325 301111
Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Fax: +44 (0) 1325 306177
Email: [email protected]
Website: www.filtronic.com
FPD1500DFN
Datasheet v2.1
REFERENCE DESIGN (5.3 – 5.9GHZ)
Vd
-Vg
1.0uF
1.0uF
FPD1500DFN EVAL Board
Schematic
15pF
15pF
20 Ohm
Z16
Z10
Z15
Z9
1
RF IN
(50 Ohm)
Z5
Z1
15pF
Z0
2
4
1
3
Z2
Z1
Z3
2
4
1
3
Z4
Z14
Z8
Z6
2
4
1
Z12
3
Z7
Z11
Desc.
Z0
Z1
Z2
Z3
Z4
Z5
Z6
Z7
Z8
Z9
Z10
Z16
Z11, Z12
Z13
Z14
Z15
Z17
Z18
Z19
15pF
3
Z13 Z17
Z18
Z19
RF OUT
(50 Ohm)
Z14
Z8
Z5
2
4
Value
0.045" x 0.050" Microstrip
0.020" x 0.500" Microstrip
W1=0.020" W2=0.020" W3=0.020" W4=0.020" Microstrip Cross
0.020" x 0.030" Microstrip
W1=0.020" W2=0.052" W3=0.020" W4=0.052" Microstrip Cross
0.052" x 0.94" Microstrip
0.020" x 0.285" Microstrip
W1=0.020" W2=0.054" W3=0.020" W4=0.054" Microstrip Cross
0.054" x 0.166" Microstrip
0.015" x 0.166" Microstrip
0.310" x 90° Microstrip Radial Stub
0.350" x 90° Microstrip Radial Stub
0.012" x 0.037" Microstrip
W1=0.020" W2=0.040" W3=0.020" W4=0.040" Microstrip Cross
0.040" x 0.175" Microstrip
0.015" x 0.157" Microstrip
0.020" x 0.180" Microstrip
0.060" x 0.050" Microstrip
0.042" x 0.220" Microstrip
PARAMETER
UNIT
PERFORMANCE
Frequency
GHz
5.3 to 5.9
Gain
dB
10.5
P1dB
dBm
27
N.F.
dB
1.5
OIP3
dBm
40
S11
dB
-10
S22
dB
-9
Vd
V
5
Vg
V
-0.4 to -0.7
Id
mA
200
8
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Filtronic Compound Semiconductors Ltd
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Email: [email protected]
Website: www.filtronic.com
FPD1500DFN
Datasheet v2.1
EVALUATION BOARD:
PCB FOOTPRINT:
9
Tel: +44 (0) 1325 301111
Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Fax: +44 (0) 1325 306177
Email: [email protected]
Website: www.filtronic.com
FPD1500DFN
Datasheet v2.1
PACKAGE OUTLINE:
(dimensions in millimeters – mm)
PREFERRED ASSEMBLY INSTRUCTIONS:
DISCLAIMERS:
Please contact Filtronic Compound Semiconductors
Ltd for further details.
This product is not designed for use in any
space based or life sustaining/supporting
equipment.
HANDLING PRECAUTIONS:
ORDERING INFORMATION:
To avoid damage to
the
devices
care
should be exercised
during
handling.
Proper
Electrostatic
Discharge
(ESD)
precautions should be observed at all stages of
storage, handling, assembly, and testing.
These devices should be treated as Class 1A
(0-500 V) as defined in JEDEC Standard No.
22-A114. Further information on ESD control
measures can be found in MIL-STD-1686 and
MIL-HDBK-263.
PART
NUMBER
DESCRIPTION
FPD1500DFN
Packaged pHEMT
EB1500DFN-BB
Packaged pHEMT eval board – 900MHz
EB1500DFN-BA
Packaged pHEMT eval board – 1.85GHz
EB1500DFN-BC
Packaged pHEMT eval board – 2.0GHz
EB1500DFN-BE
Packaged pHEMT eval board – 2.4GHz
EB1500DFN-AJ
Packaged pHEMT eval board
– 5.3 to 5.75GHz
APPLICATION NOTES & DESIGN DATA:
Application Notes and design data including Sparameters are available; please contact
Filtronic Compound Semiconductors Ltd.
10
Tel: +44 (0) 1325 301111
Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Fax: +44 (0) 1325 306177
Email: [email protected]
Website: www.filtronic.com