DMT3008LFDF 30V N-CHANNEL ENHANCEMENT MODE MOSFET Features RDS(ON) max ID max TA = +25°C 10mΩ @ VGS = 10V 12.0A 16mΩ @ VGS = 4.5V 10.4A V(BR)DSS 30V Description This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, 0.6mm Profile – Ideal for Low Profile Applications PCB Footprint of 4mm2 Low Gate Threshold Voltage Low On-Resistance Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Mechanical Data Case: U-DFN2020-6 making it ideal for high efficiency power management applications. Case Material: Molded Plastic, ―Green‖ Molding Compound. UL Flammability Classification Rating 94V-0 Applications Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish – NiPdAu over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.0065 grams (Approximate) General Purpose Interfacing Switch Power Management Functions U-DFN2020-6 D G S Pin1 Top View Pin Out Bottom View Bottom View Equivalent Circuit Ordering Information (Note 4) Part Number DMT3008LFDF-7 DMT3008LFDF-13 Notes: Marking T3 T3 Reel size (inches) 7 13 Quantity per reel 3,000 10,000 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green‖ products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information U-DFN2020-6 T3 Date Code Key Year Code Month Code 2014 B Jan 1 2015 C Feb 2 DMT3008LFDF Datasheet number: DS37638 Rev. 2 - 2 Mar 3 2016 D Apr 4 T3 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: B = 2014) M = Month (ex: 9 = September) YM ADVANCE INFORMATION NEW PRODUCT INFORMATION ADVANCED Product Summary 2017 E May 5 Jun 6 1 of 7 www.diodes.com 2018 F Jul 7 2019 G Aug 8 Sep 9 2020 H Oct O 2021 I Nov N Dec D January 2015 © Diodes Incorporated DMT3008LFDF Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol VDSS VGSS ADVANCE INFORMATION NEW PRODUCT INFORMATION ADVANCED Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 6) VGS =10.0V Steady State TA = +25°C TA = +70°C TA = +25°C TA = +70°C TA = +25°C TA = +70°C TA = +25°C TA = +70°C t<10s Continuous Drain Current (Note 6) VGS = 4.5V Steady State t<10s ID Value 30 ±20 12.0 9.5 ID 13.6 11.0 A ID 10.4 8.4 A A 11.9 9.6 70 2 8 3.2 ID Pulsed Drain Current (10µs pulse, duty cycle = 1%) Maximum Body Diode Continuous Current Avalanche Current (Note 7) L = 0.1mH Avalanche Energy (Note 7) L = 0.1mH Units V V IDM IS IAS EAS A A A A mJ Thermal Characteristics TA = +25°C TA = +70°C Steady State t<10s TA = +25°C TA = +70°C Steady State t<10s Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Total Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient (Note 6) Thermal Resistance, Junction to Case (Note 6) Operating and Storage Temperature Range Electrical Characteristics 0.8 0.5 156 116 2.1 1.3 60.8 45.0 13 -55 to +150 PD RθJA PD RθJA RθJC TJ, TSTG W °C/W W °C/W °C (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = +25°C Gate-Source Leakage ON CHARACTERISTICS (Note 8) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS 30.0 — — — — — — 1.0 ±100 V A nA VGS = 0V, ID = 250μA VDS = 24V, VGS = 0V VGS = ±20V, VDS = 0V VGS(TH) 1.0 RDS(ON) — mΩ VSD — 3.0 10.0 16.0 1.2 V Static Drain-Source On-Resistance — — — — VDS = VGS, ID = 250μA VGS = 10V, ID = 9.0A VGS = 4.5V, ID = 8.5A VGS = 0V, IS = 2A Ciss Coss Crss Rg Qg Qg Qgs Qgd tD(ON) tR tD(OFF) tF tRR Qrr — — — — — — — — — — — — — — 886 531 53 1.6 14 5.8 2.6 2.5 3.8 1.7 12.5 3.6 18.4 7.6 — — — — — — — — — — — — — — pF pF pF Ω nC nC nC nC ns ns ns ns ns nC Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (VGS = 10V) Total Gate Charge (VGS = 4.5V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Reverse Recovery Time Reverse Recovery Charge Notes: V Test Condition VDS = 15V, VGS = 0V, f = 1.0MHz VDS = 0V, VGS = 0V, f = 1.0MHz VDD = 10V, ID = 30A VDD = 10V, VGS = 10V, RL = 0.67Ω, RG = 4.7Ω, ID = 15A IF = 15A, dI/dt = 100A/μs 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. IAS and EAS rating are based on low frequency and duty cycles to keep TJ = +25°C. 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. DMT3008LFDF Datasheet number: DS37638 Rev. 2 - 2 2 of 7 www.diodes.com January 2015 © Diodes Incorporated DMT3008LFDF 30 30 VGS = 10V VGS = 4.0V 20 ID , DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 25 VGS = 4.5V VGS = 3.0V VGS = 3.5V 15 10 5 VDS = 5.0V 20 T A = 150°C 15 TA = 125°C 10 T A = 85°C TA = 25°C 5 VGS = 2.5V VGS = 2.3V 0 0 0.5 1 1.5 2 2.5 TA = -55°C 0 1 3 3 1.5 2 2.5 V GS, GATE-SOURCE VOLTAGE (V) Figure 2 Typical Transfer Characteristics Figure 2 Typical Transfer Characteristics RDS(ON), DRAI N-SOURCE ON-RESI STANCE ( ) 0.012 VGS = 4.5V 0.011 0.01 0.009 0.008 0.007 VGS = 10V 0.006 0.005 0 3 6 9 12 15 18 21 24 27 ID, DRAIN SOURCE CURRENT (A) Figure 33 Typical vs.vs. Figure TypicalOn-Resistance On-Resistance DrainCurrent Current and and Gate Drain GateVoltage Voltage 3.5 0.06 0.05 0.04 I D = 15A 0.03 0.02 0.01 30 0 0 0.012 2 4 6 8 10 12 14 VGS, GATE-SOURCE VOLTAGE (V) Figure 4 Typical Figure TypicalTransfer TransferCharacteristic Characteristic 16 1.6 VGS = 10V 0.011 1.5 TA = 150°C T A = 125°C 0.01 T A = 85°C 0.009 0.008 T A = 25°C 0.007 0.006 T A = -55°C 0.005 R DS(ON), DRAIN-SOURCE ON-RESI STANCE (NORMALIZED) RDS(ON), DRAIN-SOURCE ON-RESISTANCE () VDS, DRAIN -SOURCE VOLTAGE (V) Figure 1 Typical Output Characteristics Figure 1 Typical Output Characteristics RDS(ON), DRAIN-SOURCE ON-RESISTANCE ( ) ADVANCE INFORMATION NEW PRODUCT INFORMATION ADVANCED 25 1.4 1.3 VGS = 10V 1.2 1.1 1 0.9 0.8 0.004 0 3 6 9 12 15 18 21 24 27 ID , DRAIN CURRENT (A) Figure 55 Typical vs.vs. Figure TypicalOn-Resistance On-Resistance Drain Current Current and Drain andTemperature Temperature DMT3008LFDF Datasheet number: DS37638 Rev. 2 - 2 30 I D = 15A 0.7 -50 VGS = 4.5V I D = 15A -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE ( C) Figure66On-Resistance On-Resistance Variation Figure Variationwith withTemperature Temperature 3 of 7 www.diodes.com January 2015 © Diodes Incorporated 2 VGS(TH ), GATE THRESHOLD VOLTAGE (V) R DS(on ), DRAIN-SOURCE ON-RESISTANCE ( ) 0.018 0.016 VGS = 4.5V 0.014 I D = 15A 0.012 0.01 VGS = 10V 0.008 ID = 15A 0.006 0.004 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE ( C) Figure Variationwith withTemperature Temperature Figure77 On-Resistance On-Resistance Variation 30 1.8 I D = 1mA 1.6 1.4 I D = 250µA 1.2 1 0.8 0.6 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Threshold Variation AmbientTemperature Temperature FigureFigure 8 Gate8 Gate Threshold Variation vs.vs. Junction 100000 T A = 150°C 10000 IDSS, LEAKAG E CURRENT (nA) IS, SOURCE CURRENT (A) 25 T A= 150°C 20 T A= 125°C 15 T A= 85°C 10 T A= 25°C 5 T A = 125°C 1000 T A = 85°C 100 T A = 25°C 10 1 TA = -55°C 0 0 0.3 0.6 0.9 1.2 1.5 V SD, SOURCE-DRAIN VOLTAGE (V) Figure Figure 99 Diode DiodeForward ForwardVoltage Voltagevs. vs.Current Current 0.1 0 5 10 15 20 25 30 V DS, DRAIN-SOURCE VOLTAGE (V) Figure10 10Typical Typical Drain-Source Current vs. Voltage Figure Drain-SourceLeakage Leakage Current vs. Voltage 10000 10 C iss 1000 Coss 100 C rss 10 0 5 10 15 20 25 VGS GATE THRESHOLD VOLTAGE (V) f = 1MHz C T, JUNCTION CAPACITANCE (pF) ADVANCE INFORMATION NEW PRODUCT INFORMATION ADVANCED DMT3008LFDF 30 V DS, DRAIN-SOURCE VOLTAGE (V) Figure 11 Typical Figure TypicalJunction JunctionCapacitance Capacitance DMT3008LFDF Datasheet number: DS37638 Rev. 2 - 2 4 of 7 www.diodes.com 8 6 VDS = 10V I D = 30A 4 2 0 0 3 6 9 12 Q g, TOTAL GATE CHARGE (nC) Figure12 12 Gate Figure GateCharge Charge 15 January 2015 © Diodes Incorporated DMT3008LFDF 100 ID, DRAIN CURRENT (A) 10 DC PW = 10s 1 PW = 1s PW = 100ms PW = 10ms 0.1 TJ (m ax ) = 150°C PW = 1ms TA = 25°C V GS = 10V Single Pulse DUT on 1 * MRP Board 0.01 0.01 PW = 100µs 0.1 1 10 V DS, DRAIN-SOURCE VOLTAGE (V) Figure 13 13 SOA, Safe Figure SafeOperation OperationArea Area 1 r(t ), TRANSIENT THERMAL RESI STANCE ADVANCE INFORMATION NEW PRODUCT INFORMATION ADVANCED RDS(on) Limited 100 D = 0.9 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.05 D = 0.02 0.01 D = 0.01 D = 0.005 Rthja(t) = r(t) * R thja Rthja = 154°C/W Duty Cycle, D = t1/ t2 Single Pulse 0.001 0.00001 DMT3008LFDF Datasheet number: DS37638 Rev. 2 - 2 0.0001 0.001 0.01 0.1 1 10 t1, PULSE DURATION TIME (sec) Figure TransientThermal Thermal Resistance Figure 1414 Transient Resistance 5 of 7 www.diodes.com 100 1000 January 2015 © Diodes Incorporated DMT3008LFDF Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. (1) Package Type: U-DFN2020-6 (Type F) ADVANCE INFORMATION NEW PRODUCT INFORMATION ADVANCED A A1 A3 Seating Plane D E3 D3 D2 E E2 L e2 Z1 e b U-DFN2020-6 (Type F) Dim Min Max Typ A 0.57 0.63 0.60 A1 0 0.05 0.03 A3 0.15 b 0.25 0.35 0.30 D 1.95 2.05 2.00 D2 0.85 1.05 0.95 D3 0.33 0.43 0.38 e 0.65 BSC e2 0.863 BSC E 1.95 2.05 2.00 E2 1.05 1.25 1.15 E3 0.65 0.75 0.70 L 0.225 0.325 0.275 Z 0.20 BSC Z1 0.110 BSC All Dimensions in mm Z(4X) Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. (1) Package Type: U-DFN2020-6 (Type F) X3 C Y X Dimensions Y3 Y2 Y1 Y4 X1 Pin1 C X X1 X2 X3 Y Y1 Y2 Y3 Y4 Value (in mm) 0.650 0.400 0.480 0.950 1.700 0.425 0.800 1.150 1.450 2.300 X2 DMT3008LFDF Datasheet number: DS37638 Rev. 2 - 2 6 of 7 www.diodes.com January 2015 © Diodes Incorporated DMT3008LFDF IMPORTANT NOTICE ADVANCE INFORMATION NEW PRODUCT INFORMATION ADVANCED DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. 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