Freescale MRF6S23100H Rf power field effect transistor Datasheet

Freescale Semiconductor
Technical Data
Document Number: MRF6S23100H
Rev. 1, 5/2006
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
MRF6S23100HR3
MRF6S23100HSR3
Designed for CDMA base station applications with frequencies from 2300 to
2400 MHz. Suitable for WiMAX, WiBro and multicarrier amplifier applications.
To be used in Class AB and Class C for WLL applications.
• Typical 2 - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 1000 mA,
Pout = 20 Watts Avg., Full Frequency Band, Channel Bandwidth =
3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain — 15.4 dB
Drain Efficiency — 23.5%
IM3 @ 10 MHz Offset — - 37 dBc @ 3.84 MHz Channel Bandwidth
ACPR @ 5 MHz Offset — - 40.5 dBc @ 3.84 MHz Channel Bandwidth
• Capable of Handling 10:1 VSWR, @ 28 Vdc, 2390 MHz, 100 Watts CW
Output Power
Features
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Internally Matched for Ease of Use
• Qualified Up to a Maximum of 32 VDD Operation
• Integrated ESD Protection
• Lower Thermal Resistance Package
• Designed for Lower Memory Effects and Wide Instantaneous Bandwidth
Applications
• Low Gold Plating Thickness on Leads, 40μ″ Nominal.
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
2300 - 2400 MHz, 20 W AVG., 28 V
2 x W - CDMA
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465 - 06, STYLE 1
NI - 780
MRF6S23100HR3
CASE 465A - 06, STYLE 1
NI - 780S
MRF6S23100HSR3
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain - Source Voltage
VDSS
- 0.5, +68
Vdc
Gate - Source Voltage
VGS
- 0.5, +12
Vdc
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
330
1.9
W
W/°C
Storage Temperature Range
Tstg
- 65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature
TJ
200
°C
Symbol
Value (1,2)
Unit
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 80°C, 100 W CW
Case Temperature 75°C, 20 W CW
RθJC
0.53
0.59
°C/W
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
the MTTF calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
© Freescale Semiconductor, Inc., 2006. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF6S23100HR3 MRF6S23100HSR3
1
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22 - A114)
3A (Minimum)
Machine Model (per EIA/JESD22 - A115)
A (Minimum)
Charge Device Model (per JESD22 - C101)
IV (Minimum)
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Zero Gate Voltage Drain Leakage Current
(VDS = 68 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
—
—
1
μAdc
Gate - Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
μAdc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 250 μAdc)
VGS(th)
1
2
3
Vdc
Gate Quiescent Voltage
(VDS = 28 Vdc, ID = 1000 mAdc)
VGS(Q)
2
2.8
4
Vdc
Drain - Source On - Voltage
(VGS = 10 Vdc, ID = 2.2 Adc)
VDS(on)
0.1
0.21
0.3
Vdc
gfs
—
5.3
—
S
Crss
—
1.5
—
pF
Off Characteristics
On Characteristics
Forward Transconductance
(VDS = 10 Vdc, ID = 2 Adc)
Dynamic Characteristics (1)
Reverse Transfer Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1000 mA, Pout = 20 W Avg., f1 = 2300 MHz,
f2 = 2310 MHz and f1 = 2390 MHz, f2 = 2400 MHz, 2 - Carrier W - CDMA, 3.84 MHz Channel Bandwidth Carriers. ACPR measured in
3.84 MHz Channel Bandwidth @ ±5 MHz Offset. IM3 measured in 3.84 MHz Bandwidth @ ±10 MHz Offset. PAR = 8.5 dB @ 0.01%
Probability on CCDF.
Power Gain
Gps
14
15.4
17
dB
Drain Efficiency
ηD
22.5
23.5
—
%
Intermodulation Distortion
IM3
- 35
- 37
—
dBc
ACPR
- 38
- 40.5
—
dBc
IRL
—
- 10
—
dB
Adjacent Channel Power Ratio
Input Return Loss
1. Part is internally matched both on input and output.
MRF6S23100HR3 MRF6S23100HSR3
2
RF Device Data
Freescale Semiconductor
B1
VSUPPLY
R1
+
VBIAS
+
+
C6
C5
C8
C4
C3
Z11
RF
INPUT Z1
Z2
Z3
Z4
Z5
Z6
Z7
C9
C10
C11
C2
Z8
Z9
C1
Z12
Z13
Z10
Z14
C12
RF
OUTPUT
C7
DUT
Z1
Z2
Z3
Z4
Z5
Z6
Z7
Z8
0.725″ x 0.080″ Microstrip
0.240″ x 0.080″ Microstrip
0.110″ x 0.240″ Microstrip
0.140″ x 0.080″ Microstrip
0.167″ x 0.500″ Microstrip
0.130″ x 0.080″ Microstrip
0.250″ x 0.611″ Microstrip
0.060″ x 0.080″ Microstrip
Z9
Z10
Z11
Z12
Z13
Z14
PCB
0.329″ x 0.756″ Microstrip
0.083″ x 0.756″ Microstrip
0.092″ x 0.800″ Microstrip
0.436″ x 0.800″ Microstrip
0.974″ x 0.080″ Microstrip
0.727″ x 0.080″ Microstrip
Arlon GX - 0300 - 5022, 0.030″, εr = 2.5
Figure 1. MRF6S23100HR3(HSR3) Test Circuit Schematic
Table 5. MRF6S23100HR3(HSR3) Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
B1
Ferrite Bead
2743019447
Fair - Rite
C1, C2, C7, C8
5.6 pF Chip Capacitors, B Case
100B5R6CP500X
ATC
C3
0.01 μF Chip Capacitor (1825)
C1825C103J1RAC
Kemet
C4, C9
2.2 μF, 50 V Chip Capacitors (1825)
C1825C225J5RAC
Kemet
C5
22 μF, 25 V Tantalum Capacitor
ECS - T1ED226R
Panasonic TE series
C6
47 μF, 16 V Tantalum Capacitor
T491D476K016AS
Kemet
C10, C11
10 μF, 50 V Chip Capacitors (2220)
GRM55DR61H106KA88B
Murata
C12
330 μF, 63 V Electrolytic Capacitor
NACZF331M63V
Nippon
R1
10 Ω, 1/8 W Chip Resistor (1206)
CRC120610R0F100
Dale/Vishay
MRF6S23100HR3 MRF6S23100HSR3
RF Device Data
Freescale Semiconductor
3
C4 C3
C2
C8
C9
C10
R1
B1
C6
C11
C5
C12
C7
CUT OUT AREA
C1
MRF6S23100 Rev 2.0
Figure 2. MRF6S23100HR3(HSR3) Test Circuit Component Layout
MRF6S23100HR3 MRF6S23100HSR3
4
RF Device Data
Freescale Semiconductor
VDD = 28 Vdc, Pout = 20 W (Avg.), IDQ = 1000 mA
2−Carrier W−CDMA, 10 MHz Carrier Spacing
Gps, POWER GAIN (dB)
15.8
24.8
24.2
15.6
15.4
23.6
Gps
3.84 MHz Channel Bandwidth
−35
PAR = 8.5 dB @ 0.01% Probability (CCDF)
IM3
−37
15.2
15
14.8
−39
IRL
ACPR
−41
14.6
−43
14.4
2300 2310 2320 2330 2340 2350 2360 2370 2380 2390 2400
−12
−15
−18
−21
−24
IRL, INPUT RETURN LOSS (dB)
25.4
ηD
IM3 (dBc), ACPR (dBc)
16
ηD, DRAIN
EFFICIENCY (%)
TYPICAL CHARACTERISTICS
f, FREQUENCY (MHz)
Figure 3. 2 - Carrier W - CDMA Broadband Performance @ Pout = 20 Watts Avg.
Gps, POWER GAIN (dB)
35
34.5
15
34
14.9
14.8
35.5
Gps
3.84 MHz Channel Bandwidth
PAR = 8.5 dB @ 0.01% Probability (CCDF)
14.7
14.6
−25
−27
IM3
14.5
−29
−31
14.4
ACPR
14.3
−33
IRL
14.2
−35
2300 2310 2320 2330 2340 2350 2360 2370 2380 2390 2400
−12
−14
−16
−18
−20
−22
IRL, INPUT RETURN LOSS (dB)
15.1
35.5
VDD = 28 Vdc, Pout = 40 W (Avg.), IDQ = 1000 mA
2−Carrier W−CDMA, 10 MHz Carrier Spacing
ηD, DRAIN
EFFICIENCY (%)
ηD
IM3 (dBc), ACPR (dBc)
15.2
f, FREQUENCY (MHz)
Figure 4. 2 - Carrier W - CDMA Broadband Performance @ Pout = 40 Watts Avg.
18
Gps, POWER GAIN (dB)
17
1250 mA
16
15
1000 mA
750 mA
14
13
12
0.1
500 mA
IMD, THIRD ORDER
INTERMODULATION DISTORTION (dBc)
0
VDD = 28 Vdc, f1 = 2345 MHz
f2 = 2355 MHz, Two−Tone Measurements
10 MHz Tone Spacing
IDQ = 1500 mA
−10
VDD = 28 Vdc
f1 = 2345 MHz, f2 = 2355 MHz
Two−Tone Measurements, 10 MHz Tone Spacing
−20
1500 mA
−30
IDQ = 500 mA
−40
1250 mA
−50
1000 mA
750 mA
−60
−70
1
10
100
300
0.1
1
10
100
300
Pout, OUTPUT POWER (WATTS) PEP
Pout, OUTPUT POWER (WATTS) PEP
Figure 5. Two - Tone Power Gain versus
Output Power
Figure 6. Third Order Intermodulation Distortion
versus Output Power
MRF6S23100HR3 MRF6S23100HSR3
RF Device Data
Freescale Semiconductor
5
−15
57
−20
−25
Pout, OUTPUT POWER (dBm)
VDD = 28 Vdc, Pout = 100 W (PEP), IDQ = 1000 mA
Two−Tone Measurements
(f1 + f2)/2 = Center Frequency of 2350 MHz
3rd Order
−30
−35
−40
5th Order
−45
7th Order
Ideal
55
P3dB = 51.88 dBm (154.14 W)
53
P1dB = 51.18 dBm (131.19 W)
Actual
51
VDD = 28 Vdc, IDQ = 1000 mA
Pulsed CW, 8 μsec(on), 1 msec(off)
f = 2350 MHz
49
−50
−55
0.1
47
1
32
100
10
33
34
35
36
37
38
40
39
TWO−TONE SPACING (MHz)
Pin, INPUT POWER (dBm)
Figure 7. Intermodulation Distortion Products
versus Tone Spacing
Figure 8. Pulse CW Output Power versus
Input Power
35
−20
VDD = 28 Vdc, IDQ = 1000 mA
ηD
f1 = 2345 MHz, f2 = 2355 MHz
TC = 25_C
2−Carrier W−CDMA
10 MHz Carrier Spacing, 3.84 MHz
Channel Bandwidth, PAR = 8.5 dB
@ 0.01% Probability (CCDF)
30
25
IM3
−25
−30_C
85_C −30
20
−35
Gps
25_C
25_C
−40
15
−30_C
10
−45
85_C
5
−50
25_C
ACPR
IM3 (dBc), ACPR (dBc)
ηD, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB)
IMD, INTERMODULATION DISTORTION (dBc)
TYPICAL CHARACTERISTICS
0
−55
1
10
100
Pout, OUTPUT POWER (WATTS) AVG.
Figure 9. 2 - Carrier W - CDMA ACPR, IM3, Power Gain
and Drain Efficiency versus Output Power
18
60
−30_C
Gps
16
25_C
25_C 50
15
85_C
85_C
14
13
40
30
VDD = 28 Vdc
IDQ = 1000 mA
f = 2350 MHz
20
ηD
14
13
10
11
0.1
0
10
100
Pout, OUTPUT POWER (WATTS) CW
Figure 10. Power Gain and Drain Efficiency
versus CW Output Power
24 V
20 V
12
10
28 V
12
11
1
IDQ = 1000 mA
f = 2350 MHz
15
Gps, POWER GAIN (dB)
TC = −30_C
ηD, DRAIN EFFICIENCY (%)
Gps, POWER GAIN (dB)
17
16
70
32 V
VDD = 12 V
16 V
0
20
40
60
80
100
120
140
160
Pout, OUTPUT POWER (WATTS) CW
Figure 11. Power Gain versus Output Power
MRF6S23100HR3 MRF6S23100HSR3
6
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
MTTF FACTOR (HOURS x AMPS2)
109
108
107
106
90 100 110 120 130 140 150 160 170 180 190 200 210
TJ, JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTTF in hours x ampere2
drain current. Life tests at elevated temperatures have correlated to
better than ±10% of the theoretical prediction for metal failure. Divide
MTTF factor by ID2 for MTTF in a particular application.
Figure 12. MTTF Factor versus Junction Temperature
W - CDMA TEST SIGNAL
100
+20
3.84 MHz
Channel BW
+30
0
−10
1
(dB)
PROBABILITY (%)
10
0.1
−20
−30
−40
0.01
W−CDMA. ACPR Measured in 3.84 MHz Channel
Bandwidth @ ±5 MHz Offset. IM3 Measured in
3.84 MHz Bandwidth @ ±10 MHz Offset. PAR =
8.5 dB @ 0.01% Probability on CCDF
0.001
−50
−60
−70
0.0001
0
2
4
6
8
10
PEAK−TO−AVERAGE (dB)
Figure 13. CCDF W - CDMA 3GPP, Test Model 1,
64 DPCH, 67% Clipping, Single - Carrier Test Signal
−ACPR in
+ACPR in
3.84 MHz BW 3.84 MHz BW
−IM3 in
3.84 MHz BW
−80
−25 −20
−15
−10
−5
0
5
10
+IM3 in
3.84 MHz BW
15
20
25
f, FREQUENCY (MHz)
Figure 14. 2-Carrier W-CDMA Spectrum
MRF6S23100HR3 MRF6S23100HSR3
RF Device Data
Freescale Semiconductor
7
f = 2300 MHz
f = 2400 MHz
Zsource
Zload
f = 2400 MHz
f = 2300 MHz
Zo = 25 Ω
VDD = 28 Vdc, IDQ = 1000 mA, Pout = 20 W Avg.
f
MHz
Zsource
Ω
Zload
Ω
2.06 - j4.69
2300
12.20 - j6.20
2310
12.06 - j6.40
2.04 - j4.62
2320
11.91 - j6.56
2.02 - j4.55
2330
11.76 - j6.71
2.01 - j4.48
2340
11.60 - j6.86
1.99 - j4.42
2350
11.44 - j7.00
1.97 - j4.35
2360
11.27 - j7.13
1.96 - j4.28
2370
11.10 - j7.22
1.94 - j4.22
2380
10.92 - j7.34
1.93 - j4.15
2390
10.73 - j7.46
1.91 - j4.09
2400
10.55 - j7.53
1.90 - j4.02
Zsource = Test circuit impedance as measured from
gate to ground.
Zload
= Test circuit impedance as measured
from drain to ground.
Output
Matching
Network
Device
Under
Test
Input
Matching
Network
Z
source
Z
load
Figure 15. Series Equivalent Source and Load Impedance
MRF6S23100HR3 MRF6S23100HSR3
8
RF Device Data
Freescale Semiconductor
NOTES
MRF6S23100HR3 MRF6S23100HSR3
RF Device Data
Freescale Semiconductor
9
NOTES
MRF6S23100HR3 MRF6S23100HSR3
10
RF Device Data
Freescale Semiconductor
PACKAGE DIMENSIONS
B
G
Q
bbb
2X
1
M
T A
M
B
M
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M−1994.
2. CONTROLLING DIMENSION: INCH.
3. DELETED
4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
3
B
K
2
(FLANGE)
D
bbb
T A
M
B
M
M
M
R
(INSULATOR)
bbb
N
M
T A
M
B
M
ccc
M
T A
M
M
aaa
M
T A
M
ccc
H
B
S
(LID)
M
T A
M
B
(LID)
M
(INSULATOR)
B
M
C
F
E
A
T
A
SEATING
PLANE
INCHES
MIN
MAX
1.335
1.345
0.380
0.390
0.125
0.170
0.495
0.505
0.035
0.045
0.003
0.006
1.100 BSC
0.057
0.067
0.170
0.210
0.774
0.786
0.772
0.788
.118
.138
0.365
0.375
0.365
0.375
0.005 REF
0.010 REF
0.015 REF
MILLIMETERS
MIN
MAX
33.91
34.16
9.65
9.91
3.18
4.32
12.57
12.83
0.89
1.14
0.08
0.15
27.94 BSC
1.45
1.70
4.32
5.33
19.66
19.96
19.60
20.00
3.00
3.51
9.27
9.53
9.27
9.52
0.127 REF
0.254 REF
0.381 REF
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
CASE 465 - 06
ISSUE G
NI - 780
MRF6S23100HR3
(FLANGE)
DIM
A
B
C
D
E
F
G
H
K
M
N
Q
R
S
aaa
bbb
ccc
4X U
(FLANGE)
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M−1994.
2. CONTROLLING DIMENSION: INCH.
3. DELETED
4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
4X Z
(LID)
B
1
2X
2
B
(FLANGE)
K
D
bbb
M
T A
B
M
N
M
ccc
M
R
(LID)
M
T A
M
B
M
ccc
M
T A
S
(INSULATOR)
bbb
M
T A
M
M
B
M
aaa
M
T A
M
(LID)
B
M
(INSULATOR)
B
M
H
C
3
E
A
A
(FLANGE)
F
T
SEATING
PLANE
CASE 465A - 06
ISSUE H
NI - 780S
MRF6S23100HSR3
DIM
A
B
C
D
E
F
H
K
M
N
R
S
U
Z
aaa
bbb
ccc
INCHES
MIN
MAX
0.805
0.815
0.380
0.390
0.125
0.170
0.495
0.505
0.035
0.045
0.003
0.006
0.057
0.067
0.170
0.210
0.774
0.786
0.772
0.788
0.365
0.375
0.365
0.375
−−− 0.040
−−− 0.030
0.005 REF
0.010 REF
0.015 REF
MILLIMETERS
MIN
MAX
20.45
20.70
9.65
9.91
3.18
4.32
12.57
12.83
0.89
1.14
0.08
0.15
1.45
1.70
4.32
5.33
19.61
20.02
19.61
20.02
9.27
9.53
9.27
9.52
−−−
1.02
−−−
0.76
0.127 REF
0.254 REF
0.381 REF
STYLE 1:
PIN 1. DRAIN
2. GATE
5. SOURCE
MRF6S23100HR3 MRF6S23100HSR3
RF Device Data
Freescale Semiconductor
11
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directly or indirectly, any claim of personal injury or death associated with such
unintended or unauthorized use, even if such claim alleges that Freescale
Semiconductor was negligent regarding the design or manufacture of the part.
Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc.
All other product or service names are the property of their respective owners.
© Freescale Semiconductor, Inc. 2006. All rights reserved.
MRF6S23100HR3 MRF6S23100HSR3
Document Number: MRF6S23100H
Rev. 1, 5/2006
12
RF Device Data
Freescale Semiconductor