Z ibo Seno Electronic Engineering Co., Ltd. GBJ4A - GBJ4M 4.0A GLASS PASSIVATED BRIDGE RECTIFIER Features · · · · · · · Glass Passivated Die Construction High Case Dielectric Strength of 1500VRMS Low Reverse Leakage Current Surge Overload Rating to 120A Peak Ideal for Printed Circuit Board Applications Plastic Material - UL Flammability Classification 94V-0 GBJ4 P N A Lead Free Finish/RoHS Complian B _ Mechanical Data · · · · · · · K Case: Molded Plastic Terminals: Plated Leads, Solderable per MIL-STD-202, Method 208 Polarity: Molded on Body Mounting: Through Hole for #6 Screw Mounting Torque: 5.0 in-lbs Maximum Approx. Weight: 4.6 grams Marking: Type Number L M J E R D Min Max A 24.80 25.20 B 14.70 15.30 C H C Dim G 4.00 Nominal D 17.20 17.80 E 0.90 1.10 G 7.30 7.70 H 3.10 Æ 3.40 Æ J 3.30 3.70 K 1.50 1.90 L 9.30 9.70 M 2.50 2.90 N 3.40 3.80 P 4.40 4.80 R 0.60 0.80 All Dimensions in mm Maximum Ratings and Electrical Characteristics @ TA = 25°C unless otherwise specified Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Rectified Output Current @ TC = 115°C Non-Repetitive Peak Forward Surge Current, 8.3 ms single half-sine-wave superimposed on rated load (JEDEC method) Forward Voltage per element @ IF = 2.0A Peak Reverse Current at Rated DC Blocking Voltage @TC = 25°C @ TC = 125°C Typical Junction Capacitance per Element (Note 1) Typical Thermal Resistance (Note 2) Operating and Storage Temperature Range Notes: Symbol GBJ 4005 GBJ 401 GBJ 402 GBJ 404 GBJ 406 GBJ 408 GBJ 410 Unit VRRM VRWM VR 50 100 200 400 600 800 1000 V VR(RMS) 35 70 140 280 420 560 700 V IO 4.0 A IFSM 120 A VFM 1.0 V IRM 5.0 500 µA Cj 40 pF RqJC 5.5 °C/W Tj, TSTG -65 to +150 °C 1. Measured at 1.0 MHz and applied reverse voltage of 4.0V DC. 2. Thermal resistance from junction to case per element. Unit mounted on 300 x 300 x 1.6mm aluminum plate heat sink. GBJ4A - GBJ4M 1 of 2 www.senocn.com Alldatasheet Z ibo Seno Electronic Engineering Co., Ltd. GBJ4A – GBJ4M 5 Al. Substrate PC Board 4 3 2 1 Resistive or Inductive load 0 25 50 75 125 100 10 IF, INSTANTANEOUS FORWARD CURRENT (A) IO, AVERAGE RECTIFIED CURRENT (A) 6 150 TJ = 150°C TJ = 25°C 1.0 0.1 Pulse width = 300µs 0.01 0 0.8 1.2 1.6 1.8 1000 180 f = 1MHz Single half-sine-wave (JEDEC method) 160 Cj, JUNCTION CAPACITANCE (pF) IFSM, PEAK FWD SURGE CURRENT (A) 0.4 VF, INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 2 Typical Forward Characteristics TC, CASE TEMPERATURE (°C) Fig. 1 Forward Current Derating Curve Tj = 150°C 120 80 40 Tj = 25°C 100 0 1 10 100 10 0.1 IR, INSTANTANEOUS REVERSE CURRENT (µA) 1.0 10 100 VR, REVERSE VOLTAGE (V) Fig. 4 Typical Junction Capacitance NUMBER OF CYCLES AT 60 Hz Fig. 3 Max Non-Repetitive Surge Current 1000 TJ = 150°C TJ = 125°C 100 TJ = 100°C 10 1.0 TJ = 25°C 0.1 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) Fig. 5 Typical Reverse Characteristics GBJ4A - GBJ4M 2 of 2 www.senocn.com Alldatasheet