ZSELEC GBJ4A 4.0a glass passivated bridge rectifier Datasheet

Z ibo Seno Electronic Engineering Co., Ltd.
GBJ4A - GBJ4M
4.0A GLASS PASSIVATED BRIDGE RECTIFIER
Features
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Glass Passivated Die Construction
High Case Dielectric Strength of 1500VRMS
Low Reverse Leakage Current
Surge Overload Rating to 120A Peak
Ideal for Printed Circuit Board Applications
Plastic Material - UL Flammability
Classification 94V-0
GBJ4
P
N
A
Lead Free Finish/RoHS Complian
B
_
Mechanical Data
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K
Case: Molded Plastic
Terminals: Plated Leads, Solderable per
MIL-STD-202, Method 208
Polarity: Molded on Body
Mounting: Through Hole for #6 Screw
Mounting Torque: 5.0 in-lbs Maximum
Approx. Weight: 4.6 grams
Marking: Type Number
L
M
J
E
R
D
Min
Max
A
24.80
25.20
B
14.70
15.30
C
H
C
Dim
G
4.00 Nominal
D
17.20
17.80
E
0.90
1.10
G
7.30
7.70
H
3.10 Æ
3.40 Æ
J
3.30
3.70
K
1.50
1.90
L
9.30
9.70
M
2.50
2.90
N
3.40
3.80
P
4.40
4.80
R
0.60
0.80
All Dimensions in mm
Maximum Ratings and Electrical Characteristics
@ TA = 25°C unless otherwise specified
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
@ TC = 115°C
Non-Repetitive Peak Forward Surge Current, 8.3 ms single
half-sine-wave superimposed on rated load
(JEDEC method)
Forward Voltage per element
@ IF = 2.0A
Peak Reverse Current
at Rated DC Blocking Voltage
@TC = 25°C
@ TC = 125°C
Typical Junction Capacitance per Element (Note 1)
Typical Thermal Resistance (Note 2)
Operating and Storage Temperature Range
Notes:
Symbol
GBJ
4005
GBJ
401
GBJ
402
GBJ
404
GBJ
406
GBJ
408
GBJ
410
Unit
VRRM
VRWM
VR
50
100
200
400
600
800
1000
V
VR(RMS)
35
70
140
280
420
560
700
V
IO
4.0
A
IFSM
120
A
VFM
1.0
V
IRM
5.0
500
µA
Cj
40
pF
RqJC
5.5
°C/W
Tj, TSTG
-65 to +150
°C
1. Measured at 1.0 MHz and applied reverse voltage of 4.0V DC.
2. Thermal resistance from junction to case per element. Unit mounted on 300 x 300 x 1.6mm aluminum plate heat sink.
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Z ibo Seno Electronic Engineering Co., Ltd.
GBJ4A – GBJ4M
5
Al. Substrate PC Board
4
3
2
1
Resistive or
Inductive load
0
25
50
75
125
100
10
IF, INSTANTANEOUS FORWARD CURRENT (A)
IO, AVERAGE RECTIFIED CURRENT (A)
6
150
TJ = 150°C
TJ = 25°C
1.0
0.1
Pulse width = 300µs
0.01
0
0.8
1.2
1.6
1.8
1000
180
f = 1MHz
Single half-sine-wave
(JEDEC method)
160
Cj, JUNCTION CAPACITANCE (pF)
IFSM, PEAK FWD SURGE CURRENT (A)
0.4
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics
TC, CASE TEMPERATURE (°C)
Fig. 1 Forward Current Derating Curve
Tj = 150°C
120
80
40
Tj = 25°C
100
0
1
10
100
10
0.1
IR, INSTANTANEOUS REVERSE CURRENT (µA)
1.0
10
100
VR, REVERSE VOLTAGE (V)
Fig. 4 Typical Junction Capacitance
NUMBER OF CYCLES AT 60 Hz
Fig. 3 Max Non-Repetitive Surge Current
1000
TJ = 150°C
TJ = 125°C
100
TJ = 100°C
10
1.0
TJ = 25°C
0.1
0
20
40
60
80
100
120
140
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
Fig. 5 Typical Reverse Characteristics
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