High Speed Fieldstop Trench IGBT Second Generation Features General Description High Speed Switching & Low Power Loss VCE(sat) = 1.85V @ IC = 60A Eoff = 0.53mJ @ TC = 25°C High Input Impedance trr = 110ns (typ.) @diF/dt = 500A/ μs Maximum Junction Temperature 175°C Applications PFC UPS PV Inverter Welder IH Cooker TO-247 G C E Maximum Rating Parameter Collector-emitter voltage DC collector current, limited by Tvjmax TC=25°C TC=100°C Pulsed collector current, tp limited by Tvjmax Turn off safe operating area VCE ≤ 650V, Tvj ≤ 175°C TC=25°C Diode forward current limited by Tvjmax TC=100°C Diode pulsed current, tp limited by Tvjmax Gate-emitter voltage TC=25°C Power dissipation TC=100°C Short circuit withstand time VCC ≤ 400V, RG = 7Ω, VGE = 15V, Tvj = 150°C Operating Junction temperature range Storage temperature range Soldering temperature Wave soldering 1.6 mm (0.063 in.) from case for 10s Mounting torque, M3 screw Maximum of mounting processes: 3 Symbol Rating Unit VCE 650 100 60 180 180 60 30 200 ±20 428 214 V A A A A A V W W tsc 5 μs Tvj Tstg -40~175 -55~150 °C °C 260 °C M 0.6 Nm Symbol Rating Unit IC ICp IF IFp VGE PD A Thermal Characteristic Parameter Thermal resistance junction-to-ambient RθJA 40 Thermal resistance junction-to-case for IGBT RθJC 0.35 Thermal resistance junction-to-case for Diode RθJC 1.2 Nov. 2015 Revision 0.0 1 °C/W MagnaChip Semiconductor Ltd. High Speed Fieldstop Trench IGBT Second Generation This IGBT is produced using advanced MagnaChip’s Field nd Stop Trench IGBT 2 Generation Technology, which is not only the highest efficiency capable of switching behavior, but also it is high ruggedness and excellent quality for solar inverter, UPS, IH, welder and PFC application where low conduction losses are essential MBQ60T65PES MBQ60T65PES Part Number Marking Temp. Range Package Packing RoHS Status MBQ60T65PESTH 60T65PES -55~175°C TO-247 Tube Halogen Free Parameter Symbol Conditions Min Typ Max Unit V Static Characteristic Collector-emitter breakdown voltage Collector-emitter saturation voltage Diode forward voltage Gate-emitter threshold voltage BVCES IC = 2mA, VGE = 0V VCE(sat) IC = 60A, VGE =15V VF VGE = 0V, IF = 25A VGE(th) 650 - - Tvj = 25°C - 1.85 2.4 Tvj = 175°C - 2.6 - Tvj = 25°C - 1.45 2.0 Tvj = 175°C - 1.35 - 4.0 5.0 6.0 V VCE = VGE, IC = 0.5mA V V Zero gate voltage collector current ICES VCE = 650V, VGE = 0V, Tvj = 25°C - - 40 μA Gate-emitter leakage current IGES VGE = 20V, VCE = 0V - - ±100 nA - 95 - - 19 - - 47 - - 2327 - - 55 - Dynamic Characteristic Total gate charge Qg Gate-emitter charge Qge Gate-collector charge Qgc VCE = 520V, IC = 60A, VGE = 15V Input capacitance Cies Reverse transfer capacitance Cres Output capacitance Internal emitter inductance measured 5mm (0.197 in.) from case Coes - 270 - LE - 13.0 - td(on) - 42 - tr - 54 - td(off) - 142 - - 40 - - 0.92 - VCE = 25V, VGE = 0V, f = 1MHz nC pF nH Switching Characteristic Turn-on delay time Rise time Turn-off delay time Fall time tf VGE = 15V, VCC = 400V, IC = 60A, RG = 7Ω, Inductive Load, Tvj = 25°C Turn-on switching energy Eon Turn-off switching energy Eoff - 0.53 - Total switching energy Ets - 1.45 - td(on) - 45 - tr - 58 - - 152 - - 35 - Turn-on delay time Rise time Turn-off delay time Fall time td(off) tf VGE = 15V, VCC = 400V, IC = 60A, RG = 7Ω, Inductive Load, Tvj = 175°C ns mJ ns Turn-on switching energy Eon - 1.43 - Turn-off switching energy Eoff - 0.53 - Total switching energy Ets - 1.96 - Reverse recovery time trr - 110 - - 18 - A - 1.10 - μC - 205 - ns - 25 - A - 2.67 - μC Reverse recovery current Irr Reverse recovery charge Qrr Reverse recovery time trr Reverse recovery current Irr Reverse recovery charge Qrr Nov. 2015 Revision 0.0 IF = 25A, diF/dt = 500A/ μs, Tvj = 25°C IF = 25A, diF/dt = 500A/ μs, Tvj = 175°C 2 mJ ns MagnaChip Semiconductor Ltd. High Speed Fieldstop Trench IGBT Second Generation Electrical Characteristic (Tvj = 25°C unless otherwise specified) MBQ60T65PES Ordering Information MBQ60T65PES High Speed Fieldstop Trench IGBT Second Generation MagnaChip Semiconductor Ltd. 3 Nov. 2015 Revision 0.0 MBQ60T65PES High Speed Fieldstop Trench IGBT Second Generation MagnaChip Semiconductor Ltd. 4 Nov. 2015 Revision 0.0 MBQ60T65PES High Speed Fieldstop Trench IGBT Second Generation MagnaChip Semiconductor Ltd. 5 Nov. 2015 Revision 0.0 MBQ60T65PES High Speed Fieldstop Trench IGBT Second Generation MagnaChip Semiconductor Ltd. 6 Nov. 2015 Revision 0.0 MBQ60T65PES Physical Dimension TO-247 A L1 D E2 D1 S Q A2 b2 L b1 b E1 c e Dimension Min(mm) Max(mm) A 4.70 5.31 A1 2.20 2.60 A2 1.50 2.49 b 0.99 1.40 b1 2.59 3.43 b2 1.65 2.39 c 0.38 0.89 D 20.30 21.46 D1 13.08 - E 15.45 16.26 E1 13.06 14.02 E2 4.32 5.49 e L 5.45BSC 19.81 20.57 L1 - 4.50 ΦP 3.50 3.70 Q 5.38 S Nov. 2015 Revision 0.0 A1 6.20 6.15BSC 7 MagnaChip Semiconductor Ltd. High Speed Fieldstop Trench IGBT Second Generation E ΦP Dimensions are in millimeters, unless otherwise specified MBQ60T65PES High Speed Fieldstop Trench IGBT Second Generation DISCLAIMER: The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be expected to result in a personal injury. Seller’s customers using or selling Seller’s products for use in such applications do so at their own risk and agree to fully defend and indemnify Seller. MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility for use of any circuitry other than circuitry entirely included in a MagnaChip product. is a registered trademark of MagnaChip Semiconductor Ltd. Nov. 2015 Revision 0.0 8 MagnaChip Semiconductor Ltd.