-200mA / -30V Low VCE (sat) Digital transistors (with built-in resistors) DTB723YE / DTB723YM zDimensions (Unit : mm) zApplications Inverter, Interface, Driver DTB723YE 0.7 1.6 0.55 0.3 zFeature 1) VCE (sat) is lower than conventional products. 2) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 3) The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input. They also have the advantage of almost completely eliminating parasitic effects. 4) Only the on / off conditions need to be set for operation, making the device design easy. (2) 1.6 0.8 (3) 0.2 0.1Min. (1) 0.2 0.15 0.5 0.5 1.0 EMT3 JEITA No. (SC-75A) JEDEC No. <SOT-416> Each lead has same dimensions Abbreviated symbol : M52 zStructure PNP epitaxial plannar silicon transistor (Resistor built-in type) 0.2 DTB723YM 1.2 0.32 0.8 1.2 (3) (1)(2) 0.2 0.22 0.4 0.4 0.13 0.5 0.8 Each lead has same dimensions Package EMT3 VMT3 Packaging type Taping Taping TL T2L 3000 8000 Code Basic ordering unit (pieces) (1) IN (2) GND (3) OUT VMT3 zPackaging specifications Part No. (1) GND (2) IN (3) OUT Abbreviated symbol : M52 − DTB723YE − DTB723YM zAbsolute maximum ratings (Ta=25°C) Symbol Parameter zInner circuit Limits DTB723YE DTB723YM Unit VCC −30 V Input voltage VIN −15 to +5 V GND(+) ∗1 IC (max) −200 mA Power dissipation ∗2 PD 150 mW Junction temperature Tj 150 C Storage temperature Tstg −55 to +150 C ∗1 Characteristics of built-in transistor. ∗2 Each terminal mounted on a recommended land. www.rohm.com IN R2 Collector current c 2009 ROHM Co., Ltd. All rights reserved. ○ OUT R1 Supply voltage OUT IN GND(+) R1=2.2kΩ / R2=10kΩ 1/2 2009.10 - Rev.C DTB723YE / DTB723YM Data Sheet zElectrical characteristics (Ta=25°C) Parameter Symbol Min. Typ. Max. VI(off) − − −0.3 VI(on) −2.5 − − VO(on) − −70 −300 mV IO/II= −50mA / −2.5mA II − − −3.0 mA VI= −5V IO(off) − − −500 nA VCC= −30V, VI=0V DC current gain GI 140 − − − Transition frequency ∗ fT − 260 − MHz Input resistance R1 1.54 2.2 2.86 kΩ − Resistance ratio R2/R1 3.6 4.5 5.5 − − Input voltage Output voltage Input current Output current Unit V Conditions VCC= −5V, IO= −100µA VO= −0.3V, IO= −20mA VO= −2V, IO= −100mA VCE= −10V, IE=5mA, f=100MHz ∗ Characteristics of built-in transistor. zElectrical characteristic curves 200 10 Ii=0.6mA 120 Ii=0.5mA 100 Ii=0.4mA 80 60 Ii=0.3mA 40 Ii=0.2mA VCC =5V (mA) 140 25℃ 85℃ 10 O 160 100 V0 =0.3V Ta=－40℃ 125℃ OUTPUT CURRENT : I Ii=1.0mA Ii=0.9mA Ii=0.8mA Ii=0.7mA Ta=25℃ INPUT VOLTAGE : Vin (V) OUTPUT CURRENT : IO (mA) 180 1 Ta=125℃ 1 85℃ 25℃ －40℃ 0.1 20 0 0 0.5 1 1.5 2 Ii=0.1mA Ii=0mA 0.01 0.1 1 OUTPUT VOLTAGE : VO (V) 100 1000 0 0.5 1 1.5 2 INPUT VOLTAGE : Vin(off) (V) OUTPUT CURRENT : IO (mA) Fig.2 Input Voltage vs. Output Current Fig.1 Output Current vs. Output Voltage Fig.3 Output Current vs. Input Voltage 1 1000 VO=5V OUTPUT VOLTAGE : VO(on) (V) Ta=125℃ 85℃ DC CURENT GAIN : GI 10 25℃ 100 －40℃ 10 1 0.01 Ta=125℃ 85℃ IO/II = 20/1 25℃ －40℃ 0.1 0.01 0.1 1 10 100 1000 OUTPUT CURENT : IO (mA) Fig.4 DC Current Gain vs. Output Current www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ 1 10 100 1000 OUTPUT CURRENT : IO (mA) Fig.5 Output Voltage vs. Output Current 2/2 2009.10 - Rev.C Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. Great care was taken in ensuring the accuracy of the information specified in this document. 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