NTD60N02R Power MOSFET 62 A, 25 V, N−Channel, DPAK Features • • • • • • Planar HD3e Process for Fast Switching Performance Low RDS(on) to Minimize Conduction Loss Low Ciss to Minimize Driver Loss Low Gate Charge Optimized for High Side Switching Requirements in High−Efficiency DC−DC Converters Pb−Free Packages are Available http://onsemi.com V(BR)DSS RDS(on) TYP ID MAX 25 V 8.4 mW @ 10 V 62 A N−Channel D MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Symbol Value Unit Drain−to−Source Voltage VDSS 25 Vdc Gate−to−Source Voltage − Continuous VGS ±20 Vdc RqJC PD 2.6 58 °C/W W ID ID ID 62 50 32 A A A S Thermal Resistance Junction−to−Ambient (Note 1) Total Power Dissipation @ TA = 25°C Drain Current − Continuous @ TA = 25°C RqJA PD ID 80 1.87 10.5 C/W W A Thermal Resistance Junction−to−Ambient (Note 2) Total Power Dissipation @ TA = 25°C Drain Current − Continuous @ TA = 25°C RqJA PD ID 120 1.25 8.5 °C/W W A TJ, and Tstg −55 to 175 °C EAS 60 mJ Operating and Storage Temperature Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25°C (VDD = 50 Vdc, VGS = 10.0 Vdc, IL = 11 Apk, L = 1.0 mH, RG = 25 W) Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds 4 1 2 3 1 260 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. When surface mounted to an FR4 board using 0.5 in sq drain pad size. 2. When surface mounted to an FR4 board using the minimum recommended pad size. 1 2 3 CASE 369AA CASE 369AC DPAK 3 IPAK (Surface Mount) (Straight Lead) STYLE 2 2 3 CASE 369D DPAK (Straight Lead) STYLE 2 MARKING DIAGRAM & PIN ASSIGNMENTS 4 Drain 4 Drain TL 4 4 YWW T60 N02RG Thermal Resistance Junction−to−Case Total Power Dissipation @ TC = 25°C Drain Current Continuous @ TC = 25°C, Chip Continuous @ TC = 25°C, Limited by Package Continuous @ TA = 25°C, Limited by Wires G YWW T60 N02RG Rating 2 1 3 Drain Gate Source Y WW T60N02R G 1 2 3 Gate Drain Source = Year = Work Week = Device Code = Pb−Free Package ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. © Semiconductor Components Industries, LLC, 2006 December, 2006 − Rev. 12 1 Publication Order Number: NTD60N02R/D NTD60N02R ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Symbol Characteristic Min Typ Max Unit 25 − 27.5 25.5 − − − − − − 1.5 10 − − ±100 1.0 − 1.5 4.1 2.0 − − − − 11.2 8.4 8.2 12.5 10.5 − gFS − 27 − Mhos pF OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage (Note 3) (VGS = 0 Vdc, ID = 250 mAdc) Temperature Coefficient (Positive) V(BR)DSS Zero Gate Voltage Drain Current (VDS = 20 Vdc, VGS = 0 Vdc) (VDS = 20 Vdc, VGS = 0 Vdc, TJ = 150°C) IDSS Gate−Body Leakage Current (VGS = ±20 Vdc, VDS = 0 Vdc) IGSS Vdc mV/°C mAdc nAdc ON CHARACTERISTICS (Note 3) Gate Threshold Voltage (Note 3) (VDS = VGS, ID = 250 mAdc) Threshold Temperature Coefficient (Negative) VGS(th) Static Drain−to−Source On−Resistance (Note 3) (VGS = 4.5 Vdc, ID = 15 Adc) (VGS = 10 Vdc, ID = 20 Adc) (VGS = 10 Vdc, ID = 31 Adc) RDS(on) Forward Transconductance (VDS = 10 Vdc, ID = 15 Adc) (Note 3) Vdc mV/°C mW DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance (VDS = 20 Vdc, VGS = 0 Vdc, f = 1.0 MHz) Transfer Capacitance Ciss − 1000 1330 Coss − 480 640 Crss − 180 225 td(on) − 7.0 − tr − 33 − td(off) − 19 − SWITCHING CHARACTERISTICS (Note 4) Turn−On Delay Time Rise Time Turn−Off Delay Time (VGS = 10 Vdc, VDD = 10 Vdc, ID = 31 Adc, RG = 3.0 W) Fall Time Gate Charge (VGS = 4.5 Vdc, ID = 31 Adc, VDS = 10 Vdc) (Note 3) ns tf − 9.0 − QT − 9.5 14 QGS − 2.2 − QGD − 5.0 − VSD − − − 0.88 1.15 0.80 1.2 − − Vdc trr − 29.1 − ns ta − 13.6 − tb − 15.5 − Qrr − 0.02 − nC SOURCE−DRAIN DIODE CHARACTERISTICS Forward On−Voltage (IS = 20 Adc, VGS = 0 Vdc) (Note 3) (IS = 31 Adc, VGS = 0 Vdc) (IS = 15 Adc, VGS = 0 Vdc, TJ = 125°C) Reverse Recovery Time (IS = 31 Adc, VGS = 0 Vdc, dIS/dt = 100 A/ms) (Note 3) Reverse Recovery Stored Charge 3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%. 4. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 2 mC NTD60N02R TYPICAL CHARACTERISTICS VGS = 10 V 120 TJ = 25°C 120 100 4.5 V 4.2 V 4.0 V 80 3.8 V 3.6 V 3.4 V 3.2 V 3.0 V 2.8 V 60 40 20 2.6 V 0 2.4 V 0 RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) ID, DRAIN CURRENT (A) 5.0 V 8.0 V 6.0 V 2 4 6 8 10 80 60 40 TJ = 175°C TJ = 25°C 20 TJ = −55°C 0 2 Figure 2. Transfer Characteristics 0.03 0.02 0.01 4 2 6 8 10 0.05 TJ = 25°C 0.04 0.03 0.02 VGS = 4.5 V VGS = 10 V 0.01 0 20 40 VGS, GATE−TO−SOURCE VOLTAGE (V) 60 80 100 120 140 ID, DRAIN CURRENT (A) Figure 3. On−Resistance versus Gate−to−Source Voltage Figure 4. On−Resistance versus Drain Current and Gate Voltage 100000 2.0 ID = 31 A VGS = 10 V VGS = 0 V IDSS, LEAKAGE (nA) RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) 8 Figure 1. On−Region Characteristics 0.04 10000 1.6 1.4 1.2 1.0 TJ = 175°C 1000 100 TJ = 100°C 0.8 0.6 −50 6 VGS, GATE−TO−SOURCE VOLTAGE (V) ID = 62 A TJ = 25°C 1.8 4 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 0.05 0 VDS w 10 V 100 0 RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) ID, DRAIN CURRENT (A) 140 −25 0 25 50 75 100 125 150 175 10 0 TJ, JUNCTION TEMPERATURE (°C) Figure 5. On−Resistance Variation with Temperature 6 12 18 VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 6. Drain−to−Source Leakage Current versus Voltage http://onsemi.com 3 24 NTD60N02R C, CAPACITANCE (pF) VGS, GATE−TO−SOURCE VOLTAGE (V) TJ = 25°C Ciss 1500 VGS = 0 V VDS = 0 V Ciss 1000 Crss Coss 500 Crss 0 10 5 VGS 0 5 VDS 10 15 20 5 20 QT 4 QGS 16 VGS QDS 3 12 VDS 2 8 1 0 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 2000 4 ID = 31 A TJ = 25°C 0 2 4 6 8 0 10 Qg, TOTAL GATE CHARGE (nC) GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (V) Figure 7. Capacitance Variation Figure 8. Gate−to−Source and Drain−to−Source Voltage versus Total Charge 1000 80 tr tf td(off) 10 td(on) VGS = 0 V TJ = 25°C 70 60 50 40 30 20 10 1 1 10 100 0 0.2 Figure 9. Resistive Switching Time Variation versus Gate Resistance 100 0.4 0.6 0.8 1.0 10 ms SINGLE PULSE TC = 25°C 100 ms 10 1 ms 10 ms RDS(ON) LIMIT THERMAL LIMIT PACKAGE LIMIT 0.1 1.4 1.6 Figure 10. Diode Forward Voltage versus Current VGS = 20 V 1 1.2 VSD, SOURCE−TO−DRAIN VOLTAGE (V) RG, GATE RESISTANCE (W) ID, DRAIN CURRENT (A) t, TIME (ns) 100 IS, SOURCE CURRENT (A) VDD = 10 V ID = 31 A VGS = 10 V dc 1 10 100 VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 11. Maximum Rated Forward Biased Safe Operating Area http://onsemi.com 4 1.8 r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) NTD60N02R 1.0 D = 0.5 0.2 0.1 0.1 0.05 P(pk) 0.02 0.01 SINGLE PULSE 0.01 0.00001 0.0001 t1 t2 DUTY CYCLE, D = t1/t2 0.001 0.01 t, TIME (s) 0.1 RqJC(t) = r(t) RqJC D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) − TC = P(pk) RqJC(t) 1 10 Figure 12. Thermal Response ORDERING INFORMATION Order Number NTD60N02R Package Shipping † DPAK−3 75 Units / Rail NTD60N02RG DPAK−3 (Pb−Free) 75 Units / Rail NTD60N02RT4 DPAK−3 2500 / Tape & Reel DPAK−3 (Pb−Free) 2500 / Tape & Reel NTD60N02R−1 DPAK−3 Straight Lead 75 Units / Rail NTD60N02R−1G DPAK−3 Straight Lead (Pb−Free) 75 Units / Rail NTD60N02R−35 DPAK−3 Straight Lead (3.5 ± 0.15 mm) 75 Units / Rail NTD60N02R−35G DPAK−3 Straight Lead (3.5 ± 0.15 mm) (Pb−Free) 75 Units / Rail NTD60N02RT4G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 5 NTD60N02R PACKAGE DIMENSIONS DPAK CASE 369AA−01 ISSUE A −T− C B V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. SEATING PLANE 4 Z A S 1 2 INCHES DIM MIN MAX A 0.235 0.245 B 0.250 0.265 C 0.086 0.094 D 0.025 0.035 E 0.018 0.024 F 0.030 0.045 H 0.386 0.410 J 0.018 0.023 L 0.090 BSC R 0.180 0.215 S 0.024 0.040 U 0.020 −−− V 0.035 0.050 Z 0.155 −−− STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN E R H 3 U F J L D 2 PL 0.13 (0.005) M T SOLDERING FOOTPRINT* 6.20 0.244 2.58 0.101 5.80 0.228 3.0 0.118 1.6 0.063 6.172 0.243 SCALE 3:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 6 MILLIMETERS MIN MAX 5.97 6.22 6.35 6.73 2.19 2.38 0.63 0.89 0.46 0.61 0.77 1.14 9.80 10.40 0.46 0.58 2.29 BSC 4.57 5.45 0.60 1.01 0.51 −−− 0.89 1.27 3.93 −−− NTD60N02R PACKAGE DIMENSIONS 3 IPAK, STRAIGHT LEAD CASE 369AC−01 ISSUE O B V C E R DIM A B C D E F G H J K R V W A SEATING PLANE K W F J G H D NOTES: 1.. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2.. CONTROLLING DIMENSION: INCH. 3. SEATING PLANE IS ON TOP OF DAMBAR POSITION. 4. DIMENSION A DOES NOT INCLUDE DAMBAR POSITION OR MOLD GATE. 3 PL 0.13 (0.005) W http://onsemi.com 7 INCHES MIN MAX 0.235 0.245 0.250 0.265 0.086 0.094 0.027 0.035 0.018 0.023 0.037 0.043 0.090 BSC 0.034 0.040 0.018 0.023 0.134 0.142 0.180 0.215 0.035 0.050 0.000 0.010 MILLIMETERS MIN MAX 5.97 6.22 6.35 6.73 2.19 2.38 0.69 0.88 0.46 0.58 0.94 1.09 2.29 BSC 0.87 1.01 0.46 0.58 3.40 3.60 4.57 5.46 0.89 1.27 0.000 0.25 NTD60N02R PACKAGE DIMENSIONS DPAK CASE 369D−01 ISSUE B C B V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. E R 4 Z A S 1 2 3 −T− SEATING PLANE K J F H D G DIM A B C D E F G H J K R S V Z INCHES MIN MAX 0.235 0.245 0.250 0.265 0.086 0.094 0.027 0.035 0.018 0.023 0.037 0.045 0.090 BSC 0.034 0.040 0.018 0.023 0.350 0.380 0.180 0.215 0.025 0.040 0.035 0.050 0.155 −−− MILLIMETERS MIN MAX 5.97 6.35 6.35 6.73 2.19 2.38 0.69 0.88 0.46 0.58 0.94 1.14 2.29 BSC 0.87 1.01 0.46 0.58 8.89 9.65 4.45 5.45 0.63 1.01 0.89 1.27 3.93 −−− 3 PL 0.13 (0.005) M T STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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