PHILIPS BAV70 High-speed double diode Datasheet

DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D088
BAV70
High-speed double diode
Product specification
Supersedes data of 1997 Nov 24
1999 May 05
Philips Semiconductors
Product specification
High-speed double diode
BAV70
FEATURES
DESCRIPTION
• Small plastic SMD package
The BAV70 consists of two
high-speed switching diodes with
common cathodes, fabricated in
planar technology, and encapsulated
in the small SOT23 plastic SMD
package.
• High switching speed: max. 4 ns
• Continuous reverse voltage:
max. 70 V
• Repetitive peak reverse voltage:
max. 75 V
PINNING
PIN
DESCRIPTION
1
anode (a1)
2
anode (a2)
3
common cathode
• Repetitive peak forward current:
max. 450 mA.
handbook, halfpage
3
3
APPLICATIONS
• High-speed switching in thick and
thin-film circuits.
1
1
2
2
Top view
MAM383
Marking code: A4p = made in Hong Kong. A4t = made in Malaysia.
Fig.1 Simplified outline (SOT23) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per diode
VRRM
repetitive peak reverse voltage
−
85
V
VR
continuous reverse voltage
−
75
V
IF
continuous forward current
single diode loaded; note 1;
see Fig.2
−
215
mA
double diode loaded; note 1;
see Fig.2
−
125
mA
−
450
mA
IFRM
repetitive peak forward current
IFSM
non-repetitive peak forward current
square wave; Tj = 25 °C prior to
surge; see Fig.4
t = 1 µs
−
4
A
t = 1 ms
−
1
A
t=1s
−
0.5
A
Ptot
total power dissipation
−
250
mW
Tstg
storage temperature
Tamb = 25 °C; note 1
−65
+150
°C
Tj
junction temperature
−
150
°C
Note
1. Device mounted on an FR4 printed-circuit board.
1999 May 05
2
Philips Semiconductors
Product specification
High-speed double diode
BAV70
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
Per diode
VF
IR
forward voltage
see Fig.3
reverse current
IF = 1 mA
715
mV
IF = 10 mA
855
mV
IF = 50 mA
1
V
IF = 150 mA
1.25
V
VR = 25 V
30
nA
VR = 75 V
2.5
µA
VR = 25 V; Tj = 150 °C
60
µA
see Fig.5
VR = 75 V; Tj = 150 °C
100
µA
Cd
diode capacitance
f = 1 MHz; VR = 0; see Fig.6
1.5
pF
trr
reverse recovery time
when switched from IF = 10 mA to
IR = 10 mA; RL = 100 Ω;
measured at IR = 1 mA; see Fig.7
4
ns
Vfr
forward recovery voltage
when switched from IF = 10 mA;
tr = 20 ns; see Fig.8
1.75
V
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-tp
thermal resistance from junction to tie-point
Rth j-a
thermal resistance from junction to ambient
CONDITIONS
note 1
Note
1. Device mounted on an FR4 printed-circuit board.
1999 May 05
3
VALUE
UNIT
360
K/W
500
K/W
Philips Semiconductors
Product specification
High-speed double diode
BAV70
GRAPHICAL DATA
MBD033
300
MBG382
300
handbook, halfpage
IF
(mA)
IF
(mA)
(1)
200
(2)
(3)
200
single diode loaded
double diode loaded
100
100
0
0
0
100
T amb ( oC)
200
1
2
VF (V)
(1) Tj = 150 °C; typical values.
(2) Tj = 25 °C; typical values.
(3) Tj = 25 °C; maximum values.
Device mounted on an FR4 printed-circuit board.
Fig.2
0
Maximum permissible continuous forward
current as a function of ambient
temperature.
Fig.3
Forward current as a function of forward
voltage.
MBG704
102
handbook, full pagewidth
IFSM
(A)
10
1
10−1
1
102
10
103
tp (µs)
Based on square wave currents.
Tj = 25 °C prior to surge.
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
1999 May 05
4
104
Philips Semiconductors
Product specification
High-speed double diode
BAV70
MGA885
102
MBG446
0.8
handbook, halfpage
Cd
(pF)
IR
(µA)
VR = 75 V
10
0.6
max
75 V
1
10
0.4
25 V
1
0.2
typ
typ
10 2
0
100
0
T j ( o C)
0
200
4
8
12
VR (V)
16
f = 1 MHz; Tj = 25 °C.
Fig.5
Reverse current as a function of junction
temperature.
1999 May 05
Fig.6
5
Diode capacitance as a function of reverse
voltage; typical values.
Philips Semiconductors
Product specification
High-speed double diode
BAV70
handbook, full pagewidth
tr
tp
t
D.U.T.
10%
IF
RS = 50 Ω
IF
SAMPLING
OSCILLOSCOPE
t rr
t
R i = 50 Ω
V = VR I F x R S
MGA881
(1)
90%
VR
input signal
output signal
(1) IR = 1 mA.
Fig.7 Reverse recovery voltage test circuit and waveforms.
I
1 kΩ
450 Ω
V
I
90%
R S = 50 Ω
D.U.T.
OSCILLOSCOPE
V fr
R i = 50 Ω
10%
MGA882
t
tr
input
signal
Fig.8 Forward recovery voltage test circuit and waveforms.
1999 May 05
6
t
tp
output
signal
Philips Semiconductors
Product specification
High-speed double diode
BAV70
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
SOT23
D
E
B
A
X
HE
v M A
3
Q
A
A1
1
2
e1
bp
c
w M B
Lp
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max.
bp
c
D
E
e
e1
HE
Lp
Q
v
w
mm
1.1
0.9
0.1
0.48
0.38
0.15
0.09
3.0
2.8
1.4
1.2
1.9
0.95
2.5
2.1
0.45
0.15
0.55
0.45
0.2
0.1
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
EIAJ
ISSUE DATE
97-02-28
SOT23
1999 May 05
EUROPEAN
PROJECTION
7
Philips Semiconductors
Product specification
High-speed double diode
BAV70
DEFINITIONS
Data Sheet Status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1999 May 05
8
Philips Semiconductors
Product specification
High-speed double diode
BAV70
NOTES
1999 May 05
9
Philips Semiconductors
Product specification
High-speed double diode
BAV70
NOTES
1999 May 05
10
Philips Semiconductors
Product specification
High-speed double diode
BAV70
NOTES
1999 May 05
11
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Date of release: 1999 May 05
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