L2N7002SDW1T1G S-L2N7002SDW1T1G Small Signal MOSFET 380 mAmps, 60 Volts N–Channel SC-88 1. FEATURES ● We declare that the material of product compliance with RoHS requirements and Halogen Free. ● S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 SC88(SOT-363) qualified and PPAP capable. ● ESD protected ● Low RDS(on) 2. APPLICATIONS ● Low side load switch ● Level shift circuits ● DC−DC converter ● Portable applications i.e. DSC, PDA, Cell Phone, etc. 3. DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping L2N7002SDW1T1G 701 3000/Tape&Reel L2N7002SDW1T3G 701 10000/Tape&Reel 4. MAXIMUM RATINGS(Ta = 25ºC) Parameter Symbol Limits Unit Drain–Source Voltage VDSS 60 Vdc Gate-Source Voltage VGS ±20 Drain Current ID – Steady State TA = 25°C 320 TA = 85°C 230 TA = 25°C 380 TA = 85°C 270 – t<5s Pulsed Drain Current (tp=10μs) Source Current (Body Diode) Leshan Radio Company, LTD. Vdc mAdc IDM 1.5 A IS 300 mA Rev.O Dec 2015 1/7 L2N7002SDW1T1G, S-L2N7002SDW1T1G Small Signal MOSFET 5. THERMAL CHARACTERISTICS Parameter Symbol Limits PD Total Device Dissipation(Note 1) Unit mW – Steady State 300 – t<5s 420 RΘJA Junction−to−Ambient(Note 1) ºC/W – Steady State 417 – t<5s 300 Lead Temperature for Soldering Purposes (1/8 " from case for 10 s) TL 260 ºC Junction and Storage temperature TJ,Tstg −55∼+150 ºC ESD 2000 V Gate−Source ESD Rating(HBM, Method 3015) 6. ELECTRICAL CHARACTERISTICS (Ta= 25ºC) OFF CHARACTERISTICS Symbol Characteristic Drain–Source Breakdown Voltage VBRDSS (VGS = 0, ID = 250μAdc) Drain−to−Source Breakdown Voltage Temperature Coefficient VBRDSS/TJ Zero Gate Voltage Drain Current TJ = 25°C (VGS = 0, VDS = 60 Vdc) TJ = 125°C (VGS = 0, VDS = 50 Vdc) TJ = 25°C Gate–Body Leakage Current, Forward Gate–Body Leakage Current, Reverse Max. 60 - - Unit Vdc mV/ºC - 71 - - - 1.0 μAdc 500 - IGSSR (VGS = - 20 Vdc) Typ. IDSS IGSSF (VGS = 20 Vdc) Min. - 100 nAdc μAdc - - 10 μAdc - - -10 ON CHARACTERISTICS (Note 2) Gate Threshold Voltage VGS(th) (VDS = VGS, ID = 250μAdc) Vdc 1.0 - 2.0 - 4 - (VGS = 10 Vdc, ID = 500 mAdc) - - 2.8 (VGS = 4.5 Vdc, ID = 200 mAdc) - - 3.2 VGS(TH)/TJ RDS(on) Negative Threshold Temperature Coefficient Static Drain–Source On–State Resistance Forward Transconductance gfs (VDS = 5.0 Vdc, ID = 200 mAdc) mV/ºC Ω mS 80 - - DYNAMIC CHARACTERISTICS Input Capacitance Ciss (VDS = 25 Vdc, VGS = 0, f = 1.0 MHz) Output Capacitance Coss (VDS = 25 Vdc, VGS = 0, f = 1.0 MHz) Reverse Transfer Capacitance Crss (VDS = 25 Vdc, VGS = 0, f = 1.0 MHz) Total Gate Charge VGS = 4.5 V, VDS = 10 Gate−to−Source Charge V; ID= 500 mA Gate−to−Drain Charge pF - 21 42 - 12 24 pF pF - 0.35 0.7 QG(TOT) - 0.44 - QGS - 0.2 - QGD - 0.1 - nC 1. FR–4 = 1.0×0.75×0.062 in. 2.Pulse Test: Pulse Width ≤300 μs, Duty Cycle ≤2.0%. Leshan Radio Company, LTD. Rev.O Dec 2015 2/7 L2N7002SDW1T1G, S-L2N7002SDW1T1G Small Signal MOSFET 6. ELECTRICAL CHARACTERISTICS (Ta= 25ºC)(Con.) SWITCHING CHARACTERISTICS Turn-On Delay Time VDS = 30 V, VGEN = 10 V, Rise Time ID = 500 mA,RG =25Ω ,RL Turn-Off Delay Time =60Ω Fall Time td(on) - 2.7 - tr - 2.5 - td(off) - 13 - tf - 8 - ns BODY–DRAIN DIODE RATINGS Diode Forward On–Voltage (IS = 0.5A, VGS = 0 V) Leshan Radio Company, LTD. VSD Rev.O Dec 2015 Vdc - 0.85 - 3/7 L2N7002SDW1T1G, S-L2N7002SDW1T1G Small Signal MOSFET 7.ELRCTRICAL CHARACTERISTICS CURVES Output Characteristics Drain-Source On Resistance 1.0 4.0 VGS= 5,6,7.8,9.10 V 0.9 3.5 RDS(ON) - On Resistance (Ω) ID - Drain Current (A) 0.8 0.7 0.6 4.0 V 0.5 0.4 0.3 0.2 3.0 V 0.1 0.0 2.0 V 0 1 2 3 4 3.0 2.5 1.5 1.0 0.5 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 5 ID - Drain Current (A) Transfer Characteristics Gate Threshold Voltage 1.6 ID= 0.5 A Normalized Threshold Voltage RDS(ON) - On Resistance (Ω) 9 8 7 6 5 4 3 2 1 1 2 3 4 5 6 7 8 9 10 VGS - Gate-Source Voltage (V) Leshan Radio Company, LTD. VGS= 10 V 2.0 VDS - Drain-Source Voltage (V) 10 VGS= 4.5V Rev.O Dec 2015 IDS = 250 μA 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 -50 -25 0 25 50 75 100 125 150 Tj - Junction Temperature (°C) 4/7 L2N7002SDW1T1G, S-L2N7002SDW1T1G Small Signal MOSFET 7.ELRCTRICAL CHARACTERISTICS CURVES(Con.) Drain-Source On Resistance 2.0 VGS= 10 V ID= 0.5 A 1.8 1 1.6 IS - Source Current (A) Normalized On Resistance Source-Drain Diode Forward 2 1.4 1.2 1.0 0.8 0.6 o 0 25 50 0.01 0.2 75 100 125 150 Tj - Junction Temperature (°C) VGS - Gate-Source Voltage (V) C - Capacitance (pF) 4.0 20 Coss 10 5 Crss 0 5 10 15 20 0.8 1.0 1.2 Gate Charge Ciss 15 0.6 4.5 Frequency = 1 MHz 25 0.4 VSD - Source-Drain Voltage (V) Capacitance 30 25 30 VDS - Drain-Source Voltage (V) Leshan Radio Company, LTD. o Tj =25 C 0.1 RON@Tj= 25 C: 1.5 Ω 0.4 -50 -25 0 o Tj= 150 C Rev.O Dec 2015 VDS= 10 V IDS= 0.5 A 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0.0 0.1 0.2 0.3 0.4 0.5 QG - Gate Charge (nC) 5/7 L2N7002SDW1T1G, S-L2N7002SDW1T1G Small Signal MOSFET 7.ELRCTRICAL CHARACTERISTICS CURVES(Con.) Drain-Source On Resistance Transfer Characteristics 2.0 0.6 ID = 0.5 A VDS= 2V 0.5 VGS= 4.5 V 1.4 1.2 VGS= 10 V 1.0 0.8 o RON10V@Tj= 25 C: 1.5 Ω 0.6 0.4 0.3 o Tj=125 C 0.2 o o Tj=25 C Tj=-55 C 0.1 o RON4.5V@Tj= 25 C: 2.2 Ω 0.4 -50 -25 0 25 50 0.0 75 100 125 150 0 1 2 3 4 5 6 Tj - Junction Temperature (°C) VGS - Gate-Source Voltage (V) Drain-Source On Resistance Drain-Source On Resistance 5.0 4.5 RDS(ON) – On Resistance (Ω) ID - Drain Current (A) 1.6 6.0 VGS= 10V 5.5 O TJ= 125 C 4.0 3.5 O TJ= 85 C 3.0 2.5 O 2.0 1.5 TJ= 25 C O TJ= -55 C 1.0 0.5 RDS(ON) – On Resistance (Ω) Normalized On Resistance 1.8 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 ID - Drain Current (A) Leshan Radio Company, LTD. VGS= 4.5V O TJ= 125 C 5.0 4.5 O TJ= 85 C 4.0 3.5 O TJ= 25 C 3.0 O TJ= -55 C 2.5 2.0 1.5 1.0 0.5 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 ID - Drain Current (A) Rev.O Dec 2015 6/7 L2N7002SDW1T1G, S-L2N7002SDW1T1G Small Signal MOSFET 8.OUTLINE AND DIMENSIONS Notes: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E1 DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. MILLIMETERS INCHES DIM A MIN --- A1 0.00 A2 0.70 0.90 1.00 0.027 0.035 0.039 b 0.15 0.20 0.25 0.006 0.008 C 0.08 0.15 0.22 0.003 0.006 0.009 D 1.80 2.00 2.20 0.07 E 2.00 2.10 2.20 0.078 0.082 0.086 E1 1.15 1.25 1.35 0.045 0.049 0.053 0.46 0.010 0.014 0.018 e L NOM MAX MIN --- 1.10 --- 0.10 0.65 BSC 0.26 0.36 NOM MAX --- --- 0.043 0 --- 0.004 0.01 0.078 0.086 0.026 BSC L2 0.15 BSC 0.006 BSC aaa 0.15 0.01 bbb 0.30 0.01 ccc 0.10 0.00 ddd 0.10 0.00 9.SOLDERING FOOTPRINT Leshan Radio Company, LTD. Rev.O Dec 2015 7/7