MBR600150CT thru MBR600200CTR
Silicon Power
Schottky Diode
VRRM = 150 V - 200 V
IF(AV) = 600 A
Features
• High Surge Capability
• Types from 150 V to 200 V VRRM
Twin Tower Package
• Not ESD Sensitive
Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)
Parameter
MBR600150CT (R)
MBR600200CT (R)
Unit
VRRM
150
200
V
VRMS
106
141
V
VDC
Tj
Tstg
150
-55 to 150
-55 to 150
200
-55 to 150
-55 to 150
V
°C
°C
Symbol
Repetitive peak reverse
voltage
RMS reverse voltage
DC blocking voltage
Operating temperature
Storage temperature
Conditions
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Conditions
MBR600150CT (R)
MBR600200CT (R)
Unit
IF(AV)
TC = 125 °C
600
600
A
IFSM
tp = 8.3 ms, half sine
4000
4000
A
Maximum forward voltage
(per leg)
VF
IFM = 300 A, Tj = 25 °C
0.88
0.92
V
Reverse current at rated
DC blocking voltage (per
leg)
IR
Tj = 25 °C
Tj = 100 °C
Tj = 150 °C
3
10
50
3
10
50
mA
0.28
0.28
°C/W
Parameter
Symbol
Average forward current
(per pkg)
Peak forward surge
current (per leg)
Thermal characteristics
Thermal resistance,
junction-case (per leg)
RΘJC
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MBR600150CT thru MBR600200CTR
www.genesicsemi.com/silicon-products/schottky-rectifiers/
2
MBR600150CT thru MBR600200CTR
Package dimensions and terminal configuration
Product is marked with part number and terminal configuration.
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