Diode Semiconductor Korea Dual Hot Carrier Mixer Diodes FEATURES z Pb Very low capacitance— Less than 1.0pF@zero V. MMBD352/353/354/355 Lead-free z Low forward voltage—IF=10mA. z Power dissipation Pd=300mW z Pb-Free package is available. APPLICATIONS z MMBD352 MMBD353 MMBD354 MMBD355 Designed primarily for UHF mixer applications. SOT-23 ORDERING INFORMATION Type No. Marking Package Code MMBD352 MMBD353 MMBD354 MMBD355 M5G M4F M6H MJ1 SOT-23 SOT-23 SOT-23 SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Parameter Symbol Limits Unit Continuous reverse voltage VR 7.0 V Power Dissipation Pd 300 mW Thermal Resistance,Junction-to-Ambient RθJA 417 ℃/W Junction and storage temperature TJ,TSTG -55-150 ℃ ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Min. Reverse Breakdown Voltage V(BR) 7.0 Forward voltage VF Reverse current IR Diode Capacitanc CD Typ. 1.0 Max. Unit Conditions V IR=100μA 0.60 V IF=10mA 0.25 10 μA VR=3.0V VR=7.0V pF VR=0V,f=1MHz www.diode.kr Diode Semiconductor Korea Dual Hot Carrier Mixer Diodes MMBD352/353/354/355 TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified PACKAGE OUTLINE Plastic surface mounted package SOT-23 SOT-23 Dim Min Max A 2.85 2.95 B 1.25 1.35 C 1.0Typical D 0.37 0.43 E 0.35 0.48 G 1.85 1.95 H 0.02 0.1 J K 0.1Typical 2.35 2.45 All Dimensions in mm www.diode.kr Diode Semiconductor Korea Dual Hot Carrier Mixer Diodes MMBD352/353/354/355 SOLDERING FOOTPRINT Unit : mm PACKAGE INFORMATION Device Package Shipping MMBD352/353/354/355 SOT-23 3000/Tape&Reel www.diode.kr