Diodes DMN3033LSN-7 N-channel enhancement mode mosfet Datasheet

DMN3033LSN
N-CHANNEL ENHANCEMENT MODE MOSFET
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Features
Mechanical Data
•
•
•
•
•
•
•
•
Low Gate Charge
Low RDS(ON):
•
30 mΩ @VGS = 10V
•
40 mΩ @VGS = 4.5V
Low Input/Output Leakage
Lead Free By Design/RoHS Compliant (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
"Green" Device (Note 4)
Case: SC-59
Case Material - Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish – Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Marking Information: See Page 4
Ordering Information: See Page 4
Weight: 0.008 grams (approximate)
•
•
•
•
•
•
Drain
D
SC-59
Gate
Equivalent Circuit
Top View
Maximum Ratings
Pin Configuration
@TA = 25°C unless otherwise specified
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Note 1) Continuous
Symbol
VDSS
VGSS
TA = 25°C
TA = 70°C
ID
Pulsed Drain Current (Note 2)
Body-Diode Continuous Current (Note 1)
Thermal Characteristics
IDM
IS
Value
30
±20
6
5
24
2.25
Unit
V
V
A
A
A
@TA = 25°C unless otherwise specified
Characteristic
Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1) t ≤10s
Operating and Storage Temperature Range
Notes:
S
G
Source
Symbol
PD
RθJA
TJ, TSTG
Value
1.4
90
-55 to +150
Unit
W
°C /W
°C
1. Device mounted on 1"x1", FR-4 PC board with 2 oz. Copper and test pulse width t ≤10s.
2. Repetitive Rating, pulse width limited by junction temperature.
3. No purposefully added lead.
4. Diodes Inc's "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
DMN3033LSN
Document number: DS31116 Rev. 5 - 2
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January 2010
© Diodes Incorporated
DMN3033LSN
Electrical Characteristics
@TA = 25°C unless otherwise specified
Characteristic
STATIC PARAMETERS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
Gate Threshold Voltage
Static Drain-Source On-Resistance (Note 5)
Forward Transconductance (Note 5)
Diode Forward Voltage (Note 5)
DYNAMIC PARAMETERS (Note 6)
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Notes:
Symbol
TJ = 25°C
TJ = 55°C
Min
Typ
BVDSS
30
⎯
IDSS
⎯
⎯
IGSS
VGS(th)
⎯
1.0
RDS (ON)
⎯
gFS
VSD
⎯
⎯
⎯
⎯
25
36
5
0.7
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
Ciss
Coss
Crss
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
10.5
3.8
2.9
11
7
63
30
755
136
108
Max
⎯
1
5
±100
2.1
30
40
Unit
Test Condition
V
ID = 250μA, VGS = 0V
μA
VDS = 30V, VGS = 0V
nA
V
VDS = 0V, VGS = ±20V
VDS = VGS, ID = 250μA
VGS = 10V, ID = 6A
VGS = 4.5V, ID = 5A
VDS = 10V, ID = 8A
IS = 2.25A, VGS = 0V
mΩ
⎯
1.1
S
V
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
VGS = 5V, VDS = 15V, ID = 6A
VGS = 10V, VDS = 15V, ID = 6A
VGS = 10V, VDS = 15V, ID = 6A
VDD = 15V, VGS = 10V,
RD = 1.8Ω, RG = 6Ω
VDS = 10V, VGS = 0V
f = 1.0MHz
5. Test pulse width t = 300ms.
6. Guaranteed by design. Not subject to production testing.
20
18
VDS = 5V
Pulsed
16
14
12
10
8
6
4
2
0
0
DMN3033LSN
Document number: DS31116 Rev. 5 - 2
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2
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January 2010
© Diodes Incorporated
f = 1 MHz
VGS = 0V
1,000
0.05
0.04
CT, CAPACITANCE (pF)
RDS(on), STATIC DRAIN-SOURCE ON-RESISTANCE (Ω)
DMN3033LSN
1,200
0.06
VGS = 4.5V
0.03
VGS = 10V
0.02
800
Ciss
600
400
200
Coss
C rss
0
0.01
0
2
0
4
6
8 10 12 14 16 18 20
ID, DRAIN CURRENT (A)
Fig. 3 On-Resistance vs. Drain Current and Gate Voltage
5
10
15
20
25
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 4 Typical Total Capacitance
30
RDS(ON), STATIC DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
2
VGS = 10V
ID = 6A
1.5
VGS = 4.5V
ID = 5A
1
0.5
0
-50
0
25
50
75 100 125 150
TA, AMBIENT TEMPERATURE (C)
Fig. 6 Normalized Static Drain-Source On-Resistance
vs. Ambient Temperature
DMN3033LSN
Document number: DS31116 Rev. 5 - 2
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January 2010
© Diodes Incorporated
Ordering Information
DMN3033LSN
(Note 7)
Part Number
DMN3033LSN-7
Notes:
Case
SC-59
Packaging
3000/Tape & Reel
7. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
YM
A5
Date Code Key
Year
Code
2007
U
Month
Code
2008
V
Jan
1
2009
W
Feb
2
A5 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: U = 2007)
M = Month (ex: 9 = September)
Mar
3
2010
X
Apr
4
May
5
2011
Y
Jun
6
2012
Z
Jul
7
Aug
8
2013
A
Sep
9
2014
B
Oct
O
2015
C
Nov
N
Dec
D
Package Outline Dimensions
A
B C
G
H
K
M
N
J
L
D
Suggested Pad Layout
SC-59
Dim
Min
Max
Typ
A
0.35
0.50
0.38
B
1.50
1.70
1.60
C
2.70
3.00
2.80
D
0.95
G
1.90
H
2.90
3.10
3.00
J
0.013 0.10
0.05
K
1.00
1.30
1.10
L
0.35
0.55
0.40
M
0.10
0.20
0.15
N
0.70
0.80
0.75
0°
8°
α
All Dimensions in mm
Y
Z
C
X
DMN3033LSN
Document number: DS31116 Rev. 5 - 2
E
Dimensions Value (in mm)
Z
3.4
X
0.8
Y
1.0
C
2.4
E
1.35
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DMN3033LSN
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INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
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written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
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Copyright © 2009, Diodes Incorporated
www.diodes.com
DMN3033LSN
Document number: DS31116 Rev. 5 - 2
5 of 5
www.diodes.com
January 2010
© Diodes Incorporated
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