DMN3033LSN N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Features Mechanical Data • • • • • • • • Low Gate Charge Low RDS(ON): • 30 mΩ @VGS = 10V • 40 mΩ @VGS = 4.5V Low Input/Output Leakage Lead Free By Design/RoHS Compliant (Note 3) Qualified to AEC-Q101 Standards for High Reliability "Green" Device (Note 4) Case: SC-59 Case Material - Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish – Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Marking Information: See Page 4 Ordering Information: See Page 4 Weight: 0.008 grams (approximate) • • • • • • Drain D SC-59 Gate Equivalent Circuit Top View Maximum Ratings Pin Configuration @TA = 25°C unless otherwise specified Characteristic Drain-Source Voltage Gate-Source Voltage Drain Current (Note 1) Continuous Symbol VDSS VGSS TA = 25°C TA = 70°C ID Pulsed Drain Current (Note 2) Body-Diode Continuous Current (Note 1) Thermal Characteristics IDM IS Value 30 ±20 6 5 24 2.25 Unit V V A A A @TA = 25°C unless otherwise specified Characteristic Total Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient (Note 1) t ≤10s Operating and Storage Temperature Range Notes: S G Source Symbol PD RθJA TJ, TSTG Value 1.4 90 -55 to +150 Unit W °C /W °C 1. Device mounted on 1"x1", FR-4 PC board with 2 oz. Copper and test pulse width t ≤10s. 2. Repetitive Rating, pulse width limited by junction temperature. 3. No purposefully added lead. 4. Diodes Inc's "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. DMN3033LSN Document number: DS31116 Rev. 5 - 2 1 of 5 www.diodes.com January 2010 © Diodes Incorporated DMN3033LSN Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic STATIC PARAMETERS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current Gate Threshold Voltage Static Drain-Source On-Resistance (Note 5) Forward Transconductance (Note 5) Diode Forward Voltage (Note 5) DYNAMIC PARAMETERS (Note 6) Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Notes: Symbol TJ = 25°C TJ = 55°C Min Typ BVDSS 30 ⎯ IDSS ⎯ ⎯ IGSS VGS(th) ⎯ 1.0 RDS (ON) ⎯ gFS VSD ⎯ ⎯ ⎯ ⎯ 25 36 5 0.7 Qg Qgs Qgd tD(on) tr tD(off) tf Ciss Coss Crss ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 10.5 3.8 2.9 11 7 63 30 755 136 108 Max ⎯ 1 5 ±100 2.1 30 40 Unit Test Condition V ID = 250μA, VGS = 0V μA VDS = 30V, VGS = 0V nA V VDS = 0V, VGS = ±20V VDS = VGS, ID = 250μA VGS = 10V, ID = 6A VGS = 4.5V, ID = 5A VDS = 10V, ID = 8A IS = 2.25A, VGS = 0V mΩ ⎯ 1.1 S V ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ nC nC nC ns ns ns ns pF pF pF VGS = 5V, VDS = 15V, ID = 6A VGS = 10V, VDS = 15V, ID = 6A VGS = 10V, VDS = 15V, ID = 6A VDD = 15V, VGS = 10V, RD = 1.8Ω, RG = 6Ω VDS = 10V, VGS = 0V f = 1.0MHz 5. Test pulse width t = 300ms. 6. Guaranteed by design. Not subject to production testing. 20 18 VDS = 5V Pulsed 16 14 12 10 8 6 4 2 0 0 DMN3033LSN Document number: DS31116 Rev. 5 - 2 2 of 5 www.diodes.com 1 2 3 4 January 2010 © Diodes Incorporated f = 1 MHz VGS = 0V 1,000 0.05 0.04 CT, CAPACITANCE (pF) RDS(on), STATIC DRAIN-SOURCE ON-RESISTANCE (Ω) DMN3033LSN 1,200 0.06 VGS = 4.5V 0.03 VGS = 10V 0.02 800 Ciss 600 400 200 Coss C rss 0 0.01 0 2 0 4 6 8 10 12 14 16 18 20 ID, DRAIN CURRENT (A) Fig. 3 On-Resistance vs. Drain Current and Gate Voltage 5 10 15 20 25 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 4 Typical Total Capacitance 30 RDS(ON), STATIC DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) 2 VGS = 10V ID = 6A 1.5 VGS = 4.5V ID = 5A 1 0.5 0 -50 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (C) Fig. 6 Normalized Static Drain-Source On-Resistance vs. Ambient Temperature DMN3033LSN Document number: DS31116 Rev. 5 - 2 3 of 5 www.diodes.com -25 January 2010 © Diodes Incorporated Ordering Information DMN3033LSN (Note 7) Part Number DMN3033LSN-7 Notes: Case SC-59 Packaging 3000/Tape & Reel 7. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information YM A5 Date Code Key Year Code 2007 U Month Code 2008 V Jan 1 2009 W Feb 2 A5 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: U = 2007) M = Month (ex: 9 = September) Mar 3 2010 X Apr 4 May 5 2011 Y Jun 6 2012 Z Jul 7 Aug 8 2013 A Sep 9 2014 B Oct O 2015 C Nov N Dec D Package Outline Dimensions A B C G H K M N J L D Suggested Pad Layout SC-59 Dim Min Max Typ A 0.35 0.50 0.38 B 1.50 1.70 1.60 C 2.70 3.00 2.80 D 0.95 G 1.90 H 2.90 3.10 3.00 J 0.013 0.10 0.05 K 1.00 1.30 1.10 L 0.35 0.55 0.40 M 0.10 0.20 0.15 N 0.70 0.80 0.75 0° 8° α All Dimensions in mm Y Z C X DMN3033LSN Document number: DS31116 Rev. 5 - 2 E Dimensions Value (in mm) Z 3.4 X 0.8 Y 1.0 C 2.4 E 1.35 4 of 5 www.diodes.com January 2010 © Diodes Incorporated DMN3033LSN IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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