BCP69 PNP Transistor Elektronische Bauelemente Silicon Epitaxial Transistor RoHS Compliant Product SOT-223 Description The BCP69 is designed for guse in low voltage and medium power applications. Features * VCEO : -20V * IC : 1A REF. Date Code A C D E I H BCP69 B C E Millimeter Min. Max. 6.70 7.30 2.90 3.10 0.02 0.10 0 10 0.60 0.80 0.25 0.35 REF. B J 1 2 3 4 5 Millimeter Min. Max. 13 TYP. 2.30 REF. 6.30 6.70 6.30 6.70 3.30 3.70 3.30 3.70 1.40 1.80 o MAXIMUM RATINGS* (Tamb =25 C, unless otherwise specified) Symbol Value Units VCBO Collector-Base Voltage - 25 V VCEO VEBO Collector-Emitter Voltage Emitter-Base Voltage - 20 V V IC PD TJ,Tstg Parameter -5 Collector Current -1 Total Power Dissipation 1.5 Junction and Storage Temperature -65~-150 A W C O o ELECTRICAL CHARACTERISTICS Tamb=25 C unless otherwise specified Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Base Cutoff Current Emitter-Base Cutoff Current Collector Saturation Voltage Base-Emitter Voltage DC Current Gain Gain-Bandwidth Product Symbol BVCBO BVCEO BVEBO I CBO I EBO *VCE(sat)1 *VBE(on) *hFE1 *hFE2 *hFE3 fT Min - 25 - 20 -5 50 85 60 - Typ. - Max - 10 Uni V V V uA 60 - 10 - 500 - 1.0 375 - uA mV Test Conditions I C=-100µA, I E=0 I C=-1mA, I B=0 I E=-10µA, IC=0 VCB=- 25V, I E=0 VEB=-5V, IC=0 I C=-1mA, I B=-100mA V VCE=-1V, I C=-1A VCE =-10V, I C=-5mA VCE=-1V, I C=-500mA VCE=-1V, I C=-1A MH z VCE=- 5V, IC=-10 mA *Pulse Test: Pulse Width http://www.SeCoSGmbH.com 01-Jun-2002 Rev. A 380 s, Duty Cycle 2% Any changing of specification will not be informed individual Page 1 of 2 BCP69 Elektronische Bauelemente PNP Transistor Silicon Epitaxial Transistor CHARACTERISTIC CURVES http://www.SeCoSGmbH.com 01-Jun-2002 Rev. A Any changing of specification will not be informed individual Page 2 of 2