LESHAN RADIO COMPANY, LTD. Bias Resistor Transistors LDTA114YET1 PNP Silicon Surface Mount Transistors With Monolithic Bias Resistor Network 3 This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter 1 2 SC-89 resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SC-89 package which is designed for low power surface mount applications. ƽSimplifies Circuit Design ƽReduces Board Space Pin 1 Base (Input) ƽReduces Component Count ƽThe SC-89 Package can be Soldered using Wave or Reflow. Pin 3 Collector (Output) R1 R2 Pin 2 Emitter (Ground) ƽAvailable in 8 mm, 7 inch/3000 Unit Tape & Reel ƽThis is Pb-Free Device. DEVICE MARKING AND ORDERING INFORMATION Device Marking Package Shipping 6D SC-89 (Pb-Free) 3000/Tape&Reel LDTA114YET1 MAXIMUM RATINGS (TA = 25°C unless otherwise noted) MARKING DIAGRAM Symbol Value Unit Collector-Base Voltage VCBO 50 Vdc Collector-Emitter Voltage VCEO 50 Vdc IC 100 mAdc Symbol Max Unit PD 200 (Note 1) 300 (Note 2) 1.6 (Note 1) 2.4 (Note 2) mW Rating Collector Current 3 XX M 1 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation TA = 25°C Derate above 25°C xx M 2 = Specific Device Code = Date Code mW/°C Thermal Resistance – Junction-to-Ambient RθJA 600 (Note 1) 400 (Note 2) °C/W Junction and Storage Temperature Range TJ, Tstg –55 to +150 °C 1. FR–4 @ Minimum Pad 2. FR–4 @ 1.0 x 1.0 inch Pad Version 1.0 LDTA114YET1-1/4 LESHAN RADIO COMPANY, LTD. LDTA114YET1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Min Typ Max Unit Collector-Base Cutoff Current (VCB = 50 V, IE = 0) ICBO – – 100 nAdc Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0) ICEO – – 500 nAdc Emitter-Base Cutoff Current (VEB = 6.0 V, IC = 0 ) IEBO – – 0.2 mAdc Collector-Base Breakdown Voltage (IC = 10 µA, IE = 0) V(BR)CBO 50 – – Vdc Collector-Emitter Breakdown Voltage (Note 3) (IC = 2.0 mA, IB = 0) V(BR)CEO 50 – – Vdc hFE 80 140 – VCE(sat) – – 0.25 Vdc Characteristic OFF CHARACTERISTICS ON CHARACTERISTICS (Note 3) DC Current Gain (VCE = 10 V, IC = 5.0 mA) Collector-Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA) Output Voltage (on) (VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kΩ) VOL – – 0.2 Vdc Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kΩ) VOH 4.9 – – Vdc Input Resistor R1 7.0 10 13 kΩ Resistor Ratio R1/R2 0.17 0.21 0.25 3. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0% PD , POWER DISSIPATION (MILLIWATTS) 250 200 150 100 50 0 -ā50 RθJA = 600°C/W 0 50 100 TA, AMBIENT TEMPERATURE (°C) 150 Figure 1. Derating Curve Version 1.0 LDTA114YET1-2/4 LESHAN RADIO COMPANY, LTD. 180 1 IC/IB = 10 hFE , DC CURRENT GAIN (NORMALIZED) VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) LDTA114YET1 TAĂ=Ă-25°C 25°C 0.1 75°C 0.01 0.001 0 20 40 60 IC, COLLECTOR CURRENT (mA) 25°C 140 -25°C 120 100 80 60 40 20 0 80 TAĂ=Ă75°C VCE = 10 V 160 1 2 4 6 Figure 2. VCE(sat) versus IC 100 IC, COLLECTOR CURRENT (mA) 3.5 Cob , CAPACITANCE (pF) TAĂ=Ă75°C f = 1 MHz lE = 0 V TA = 25°C 4 3 2.5 2 1.5 1 0.5 0 2 4 6 8 10 15 20 25 30 35 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 45 Figure 4. Output Capacitance 50 25°C -25°C 10 VO = 5 V 1 0 2 4 6 Vin, INPUT VOLTAGE (VOLTS) 10 +12 V VO = 0.2 V V in , INPUT VOLTAGE (VOLTS) 8 Figure 5. Output Current versus Input Voltage 10 25°C 75°C TAĂ=Ă-25°C Typical Application for PNP BRTs 1 0.1 80 90 100 Figure 3. DC Current Gain 4.5 0 8 10 15 20 40 50 60 70 IC, COLLECTOR CURRENT (mA) LOAD 0 10 20 30 IC, COLLECTOR CURRENT (mA) 40 Figure 6. Input Voltage versus Output Current Version 1.0 50 Figure 7. Inexpensive, Unregulated Current Source LDTA114YET1-3/4 LESHAN RADIO COMPANY, LTD. LDTA114YET1 SC-89 A -X- 3 1 2 B -Y- NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 463C-01 OBSOLETE, NEW STANDARD 463C-02. S K G 2 PL D 0.08 (0.003) M DIM A B C D G H J K L M N S 3 PL X Y N M C J -T- H MILLIMETERS MIN NOM MAX 1.50 1.60 1.70 0.75 0.85 0.95 0.60 0.70 0.80 0.23 0.28 0.33 0.50 BSC 0.53 REF 0.10 0.15 0.20 0.30 0.40 0.50 1.10 REF ----10 _ ----10 _ 1.50 1.60 1.70 MIN 0.059 0.030 0.024 0.009 0.004 0.012 ----0.059 INCHES NOM 0.063 0.034 0.028 0.011 0.020 BSC 0.021 REF 0.006 0.016 0.043 REF ----0.063 MAX 0.067 0.040 0.031 0.013 0.008 0.020 10 _ 10 _ 0.067 SEATING PLANE H L G RECOMMENDED PATTERN OF SOLDER PADS Version 1.0 LDTA114YET1-4/4