ETC2 OM6027SC Power mosfets in hermetic isolated jedec to-258aa size 6 die Datasheet

OM6025SC OM6027SC OM6031SC
OM6026SC OM6028SC OM6032SC
POWER MOSFETS IN HERMETIC
ISOLATED JEDEC TO-258AA SIZE 6 DIE
400V Thru 1000V, Up To 26 Amp N-Channel,
Size 6 MOSFETs, High Energy Capability
FEATURES
•
•
•
•
•
•
Isolated Hermetic Metal Package
Size 6 Die, High Energy
Fast Switching, Low Drive Current
Ease of Paralleling For Added Power
Low RDS(on)
Available Screened To MIL-S-19500, TX, TXV And S Levels
DESCRIPTION
This series of hermetically packaged products feature the latest advanced MOSFET
and packaging technology. They are ideally suited for Military requirements where
small size, high performance and high reliability are required, and in applications such
as switching power supplies, motor controls, inverters, choppers, audio amplifiers and
high energy pulse circuits. This series also features avalanche high energy capability
at elevated temperatures.
MAXIMUM RATINGS
PART NUMBER
OM6025SC/OM6032SC
OM6026SC/OM6031SC
OM6027SC/OM6028SC
VDS
400
500
1000
SCHEMATIC
4 11 R2
Supersedes 1 07 R1
3.1 - 97
RDS(ON)
.20
.27
1.30
ID (Amp)
24
22
10
3.1
OM6025SC - OM6032SC
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Parameter
OM6025SC OM6026SC OM6027SC
Units
OM6032SC OM6031SC OM6028SC
VDS
Drain-Source Voltage
400
500
1000
V
VDGR
Drain-Gate Voltage (RGS = 1 M )
400
500
1000
V
ID @ TC = 25°C
Continuous Drain Current
24
22
10
A
IDM
Pulsed Drain Current
92
85
40
A
PD @ TC = 25°C
WDSS (1)
Maximum Power Dissipation
165
165
165
W
Derate Above 25°C Ambient
.025
.025
.025
W/°C
1000
1200
1000
mJ
-55 to 150
-55 to 150
-55 to 150
°C
275
275
275
°C
Single Pulse Energy
Drain To Source @ 25°C
TJ
Operating and
Tstg
Storage Temperature Range
Lead Temperature
(1/8" from case for 5 secs.)
Note 1: VDD = 50V, ID = as noted
THERMAL RESISTANCE (MAXIMUM) at TA = 25°C
RthJC
Junction-to-Case
.76
°C/W
RthJA
Junction-to-Ambient
40
°C/W
1.32
W/°C
Derate above 25°C TC
Free Air Operation
MECHANICAL OUTLINES
.695
.685
.250
TYP.
.045
.035
.270
.240
.695
.685
.165
.155
.045
.035
.250 TYP.
.550 .285
.530
3.1
.125 ∅
2 PLACES
.835
.815
1
. 25 TYP.
.707
.697
.500
MIN.
.550
.530
.005
.145
REF.
.200
.400
.940
±.002
.060 DIA. TYP.
3 PLACES
.092 MAX.
.140
.270
MAX.
.750
.500
.005
.065
.055
.200 TYP.
.140 TYP.
OM6025SC, OM6026SC, OM6027SC
OM6028SC, OM6031SC, OM6032SC
PACKAGE OPTIONS
MOD PAK
6 PIN SIP
NOTE: MOSFETs are also available in Z-Tab, dual and quad pak styles - Please call the factory for more information.
3.1 - 98
OM6025SC - OM6032SC
ELECTRICAL CHARACTERISTICS:
OM6025SC, OM6032SC (TC = 25° unless otherwise noted)
Characteristic
Symbol
Min.
Typ.
Max.
V(BR)DSS
400
-
-
Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage (VGS = 0, ID = 0.25 mA)
Zero Gate Voltage Drain
Vdc
mAdc
IDSS
(VDS = 400 V, VGS = 0)
-
-
(VDS = 400 V, VGS = 0, TJ = 125° C)
-
-
0.25
1.0
Gate-Body Leakage Current, Forward (VGSF = 20 Vdc, VDS = 0)
IGSSF
-
-
100
nAdc
Gate-Body Leakage Current, Reverse (VGSR = 20 Vdc, VDS = 0)
IGSSR
-
-
100
nAdc
2.0
3.0
4.0
ON CHARACTERISTICS*
Gate-Threshold Voltage
VGS(th)
(VDS = VGS, ID = 0.25 mAdc
(TJ = 125° C)
Static Drain-Source On-Resistance (VGS = 10 Vdc, ID = 12 Adc)
rDS(on)
Drain-Source On-Voltage (VGS = 10 Vdc)
VDS(on)
(ID = 24 A)
(ID = 12 A, TJ = 125° C)
Vdc
1.5
-
3.5
-
-
0.20
-
-
5.4
Ohm
Vdc
-
-
5.4
gFS
14
-
-
mhos
(VDS = 25 V, VGS = 0,
Ciss
-
5600
-
pF
f = 1.0 MHz)
Coss
-
78
-
Crss
-
230
-
Forward Transconductance (VDS = 15 Vdc, ID = 12 Adc)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
td(on)
-
70
-
(VDD = 250 V, ID = 24 A,
tr
-
190
-
Rgen = 4.3 ohms)
td(off)
-
160
-
tf
-
160
-
(VDS = 400 V, ID = 24 A,
Qg
-
110
140
VGS = 10 V)
Qgs
-
20
-
Qgd
-
55
-
VSD
-
1.1
1.6
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
ns
nC
SOURCE DRAIN DIODE CHARACTERISTICS
Forward On-Voltage
Forward Turn-On Time
(IS = 24 A, d/dt = 100 A/µs)
ton
Reverse Recovery Time
trr
ELECTRICAL CHARACTERISTICS:
-
500
Vdc
ns
**
1000
OM6026SC, OM6031SC (TC = 25° unless otherwise noted)
Characteristic
Symbol
Min.
Typ.
Max.
V(BR)DSS
500
-
-
Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage (VGS = 0, ID = 0.25 mA)
Zero Gate Voltage Drain
IDSS
Vdc
mAdc
(VDS = 500 V, VGS = 0)
-
-
(VDS = 500 V, VGS = 0, TJ = 125° C)
-
-
0.25
1.0
Gate-Body Leakage Current, Forward (VGSF = 20 Vdc, VDS = 0)
IGSSF
-
-
100
nAdc
Gate-Body Leakage Current, Reverse (VGSR = 20 Vdc, VDS = 0)
IGSSR
-
-
100
nAdc
2.0
3.0
4.0
ON CHARACTERISTICS*
Gate-Threshold Voltage
VGS(th)
(VDS = VGS, ID = 0.25 mAdc
(TJ = 125° C)
Static Drain-Source On-Resistance (VGS = 10 Vdc, ID = 11 Adc)
rDS(on)
Drain-Source On-Voltage (VGS = 10 Vdc)
VDS(on)
(ID = 22 A)
(ID = 11 A, TJ = 125° C)
Vdc
1.5
-
3.5
-
-
0.27
-
-
8.0
3.1
Ohm
Vdc
-
-
8.0
gFS
13
-
-
mhos
(VDS = 25 V, VGS = 0,
Ciss
-
5600
-
pF
f = 1.0 MHz)
Coss
-
680
-
Crss
-
200
-
Forward Transconductance (VDS = 15 Vdc, ID = 11 Adc)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
td(on)
-
70
-
(VDD = 250 V, ID = 22 A,
tr
-
190
-
Rgen = 4.3 ohms)
Td(off)
-
160
-
tf
-
160
-
(VDS = 400 V, ID = 22 A,
Qg
-
115
140
VGS = 10 V)
Qgs
-
20
-
Qgd
-
60
-
VSD
-
1.1
1.6
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
ns
nC
SOURCE DRAIN DIODE CHARACTERISTICS
Forward On-Voltage
Forward Turn-On Time
(IS = 22 A, d/dt = 100 A/µs)
Reverse Recovery Time
ton
trr
* Indicates Pulse Test = 300 µsec, Duty Cycle = 2%
** Limited by circuit inductance
3.1 - 99
-
500
Vdc
ns
**
1000
OM6025SC - OM6032SC
ELECTRICAL CHARACTERISTICS:
OM6027SC, OM6028SC (TC = 25° unless otherwise noted)
Characteristic
Symbol
Min.
Typ.
Max.
V(BR)DSS
1000
-
-
Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage (VGS = 0, ID = 0.25 mA)
Zero Gate Voltage Drain
IDSS
Vdc
mAdc
(VDS = 1000 V, VGS = 0)
-
-
(VDS = 1000 V, VGS = 0, TJ = 125° C)
-
-
0.25
1.0
Gate-Body Leakage Current, Forward (VGSF = 20 Vdc, VDS = 0)
IGSSF
-
-
100
nAdc
Gate-Body Leakage Current, Reverse (VGSR = 20 Vdc, VDS = 0)
IGSSR
-
-
100
nAdc
2.0
3.0
4.0
ON CHARACTERISTICS*
Gate-Threshold Voltage
VGS(th)
(VDS = VGS, ID = 0.25 mAdc
(TJ = 125° C)
Static Drain-Source On-Resistance (VGS = 10 Vdc, ID = 5 Adc)
rDS(on)
Drain-Source On-Voltage (VGS = 10 Vdc)
VDS(on)
(ID = 10 A)
(ID = 5 A, TJ = 125° C)
Vdc
1.5
-
3.5
-
-
1.3
-
-
15
Ohm
Vdc
-
-
15.3
gFS
5.0
-
-
mhos
(VDS = 25 V, VGS = 0,
Ciss
-
3900
-
pF
f = 1.0 MHz)
Coss
-
300
-
Crss
-
65
-
Forward Transconductance (VDS = 15 Vdc, ID = 5 Adc)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
td(on)
-
40
-
(VDD = 250 V, ID = 5 A,
tr
-
100
-
Rgen = 4.3 ohms)
td(off)
-
100
-
tf
-
100
-
(VDS = 400 V, ID = 10 A,
Qg
-
100
140
VGS = 10 V)
Qgs
-
20
-
Qgd
-
40
-
VSD
-
-
1.5
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
ns
nC
SOURCE DRAIN DIODE CHARACTERISTICS
Forward On-Voltage
Forward Turn-On Time
(IS = 10 A, d/dt = 100 A/µs)
Reverse Recovery Time
ton
trr
-
600
Vdc
ns
**
1000
* Indicates Pulse Test = 300 µsec, Duty Cycle = 2%
** Limited by circuit inductance
3.1
205 Crawford Street, Leominster, MA 01453 USA (508) 534-5776 FAX (508) 537-4246
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