OM6025SC OM6027SC OM6031SC OM6026SC OM6028SC OM6032SC POWER MOSFETS IN HERMETIC ISOLATED JEDEC TO-258AA SIZE 6 DIE 400V Thru 1000V, Up To 26 Amp N-Channel, Size 6 MOSFETs, High Energy Capability FEATURES • • • • • • Isolated Hermetic Metal Package Size 6 Die, High Energy Fast Switching, Low Drive Current Ease of Paralleling For Added Power Low RDS(on) Available Screened To MIL-S-19500, TX, TXV And S Levels DESCRIPTION This series of hermetically packaged products feature the latest advanced MOSFET and packaging technology. They are ideally suited for Military requirements where small size, high performance and high reliability are required, and in applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits. This series also features avalanche high energy capability at elevated temperatures. MAXIMUM RATINGS PART NUMBER OM6025SC/OM6032SC OM6026SC/OM6031SC OM6027SC/OM6028SC VDS 400 500 1000 SCHEMATIC 4 11 R2 Supersedes 1 07 R1 3.1 - 97 RDS(ON) .20 .27 1.30 ID (Amp) 24 22 10 3.1 OM6025SC - OM6032SC ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Parameter OM6025SC OM6026SC OM6027SC Units OM6032SC OM6031SC OM6028SC VDS Drain-Source Voltage 400 500 1000 V VDGR Drain-Gate Voltage (RGS = 1 M ) 400 500 1000 V ID @ TC = 25°C Continuous Drain Current 24 22 10 A IDM Pulsed Drain Current 92 85 40 A PD @ TC = 25°C WDSS (1) Maximum Power Dissipation 165 165 165 W Derate Above 25°C Ambient .025 .025 .025 W/°C 1000 1200 1000 mJ -55 to 150 -55 to 150 -55 to 150 °C 275 275 275 °C Single Pulse Energy Drain To Source @ 25°C TJ Operating and Tstg Storage Temperature Range Lead Temperature (1/8" from case for 5 secs.) Note 1: VDD = 50V, ID = as noted THERMAL RESISTANCE (MAXIMUM) at TA = 25°C RthJC Junction-to-Case .76 °C/W RthJA Junction-to-Ambient 40 °C/W 1.32 W/°C Derate above 25°C TC Free Air Operation MECHANICAL OUTLINES .695 .685 .250 TYP. .045 .035 .270 .240 .695 .685 .165 .155 .045 .035 .250 TYP. .550 .285 .530 3.1 .125 ∅ 2 PLACES .835 .815 1 . 25 TYP. .707 .697 .500 MIN. .550 .530 .005 .145 REF. .200 .400 .940 ±.002 .060 DIA. TYP. 3 PLACES .092 MAX. .140 .270 MAX. .750 .500 .005 .065 .055 .200 TYP. .140 TYP. OM6025SC, OM6026SC, OM6027SC OM6028SC, OM6031SC, OM6032SC PACKAGE OPTIONS MOD PAK 6 PIN SIP NOTE: MOSFETs are also available in Z-Tab, dual and quad pak styles - Please call the factory for more information. 3.1 - 98 OM6025SC - OM6032SC ELECTRICAL CHARACTERISTICS: OM6025SC, OM6032SC (TC = 25° unless otherwise noted) Characteristic Symbol Min. Typ. Max. V(BR)DSS 400 - - Unit OFF CHARACTERISTICS Drain-Source Breakdown Voltage (VGS = 0, ID = 0.25 mA) Zero Gate Voltage Drain Vdc mAdc IDSS (VDS = 400 V, VGS = 0) - - (VDS = 400 V, VGS = 0, TJ = 125° C) - - 0.25 1.0 Gate-Body Leakage Current, Forward (VGSF = 20 Vdc, VDS = 0) IGSSF - - 100 nAdc Gate-Body Leakage Current, Reverse (VGSR = 20 Vdc, VDS = 0) IGSSR - - 100 nAdc 2.0 3.0 4.0 ON CHARACTERISTICS* Gate-Threshold Voltage VGS(th) (VDS = VGS, ID = 0.25 mAdc (TJ = 125° C) Static Drain-Source On-Resistance (VGS = 10 Vdc, ID = 12 Adc) rDS(on) Drain-Source On-Voltage (VGS = 10 Vdc) VDS(on) (ID = 24 A) (ID = 12 A, TJ = 125° C) Vdc 1.5 - 3.5 - - 0.20 - - 5.4 Ohm Vdc - - 5.4 gFS 14 - - mhos (VDS = 25 V, VGS = 0, Ciss - 5600 - pF f = 1.0 MHz) Coss - 78 - Crss - 230 - Forward Transconductance (VDS = 15 Vdc, ID = 12 Adc) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Transfer Capacitance SWITCHING CHARACTERISTICS Turn-On Delay Time Rise Time Turn-Off Delay Time td(on) - 70 - (VDD = 250 V, ID = 24 A, tr - 190 - Rgen = 4.3 ohms) td(off) - 160 - tf - 160 - (VDS = 400 V, ID = 24 A, Qg - 110 140 VGS = 10 V) Qgs - 20 - Qgd - 55 - VSD - 1.1 1.6 Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge ns nC SOURCE DRAIN DIODE CHARACTERISTICS Forward On-Voltage Forward Turn-On Time (IS = 24 A, d/dt = 100 A/µs) ton Reverse Recovery Time trr ELECTRICAL CHARACTERISTICS: - 500 Vdc ns ** 1000 OM6026SC, OM6031SC (TC = 25° unless otherwise noted) Characteristic Symbol Min. Typ. Max. V(BR)DSS 500 - - Unit OFF CHARACTERISTICS Drain-Source Breakdown Voltage (VGS = 0, ID = 0.25 mA) Zero Gate Voltage Drain IDSS Vdc mAdc (VDS = 500 V, VGS = 0) - - (VDS = 500 V, VGS = 0, TJ = 125° C) - - 0.25 1.0 Gate-Body Leakage Current, Forward (VGSF = 20 Vdc, VDS = 0) IGSSF - - 100 nAdc Gate-Body Leakage Current, Reverse (VGSR = 20 Vdc, VDS = 0) IGSSR - - 100 nAdc 2.0 3.0 4.0 ON CHARACTERISTICS* Gate-Threshold Voltage VGS(th) (VDS = VGS, ID = 0.25 mAdc (TJ = 125° C) Static Drain-Source On-Resistance (VGS = 10 Vdc, ID = 11 Adc) rDS(on) Drain-Source On-Voltage (VGS = 10 Vdc) VDS(on) (ID = 22 A) (ID = 11 A, TJ = 125° C) Vdc 1.5 - 3.5 - - 0.27 - - 8.0 3.1 Ohm Vdc - - 8.0 gFS 13 - - mhos (VDS = 25 V, VGS = 0, Ciss - 5600 - pF f = 1.0 MHz) Coss - 680 - Crss - 200 - Forward Transconductance (VDS = 15 Vdc, ID = 11 Adc) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Transfer Capacitance SWITCHING CHARACTERISTICS Turn-On Delay Time Rise Time Turn-Off Delay Time td(on) - 70 - (VDD = 250 V, ID = 22 A, tr - 190 - Rgen = 4.3 ohms) Td(off) - 160 - tf - 160 - (VDS = 400 V, ID = 22 A, Qg - 115 140 VGS = 10 V) Qgs - 20 - Qgd - 60 - VSD - 1.1 1.6 Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge ns nC SOURCE DRAIN DIODE CHARACTERISTICS Forward On-Voltage Forward Turn-On Time (IS = 22 A, d/dt = 100 A/µs) Reverse Recovery Time ton trr * Indicates Pulse Test = 300 µsec, Duty Cycle = 2% ** Limited by circuit inductance 3.1 - 99 - 500 Vdc ns ** 1000 OM6025SC - OM6032SC ELECTRICAL CHARACTERISTICS: OM6027SC, OM6028SC (TC = 25° unless otherwise noted) Characteristic Symbol Min. Typ. Max. V(BR)DSS 1000 - - Unit OFF CHARACTERISTICS Drain-Source Breakdown Voltage (VGS = 0, ID = 0.25 mA) Zero Gate Voltage Drain IDSS Vdc mAdc (VDS = 1000 V, VGS = 0) - - (VDS = 1000 V, VGS = 0, TJ = 125° C) - - 0.25 1.0 Gate-Body Leakage Current, Forward (VGSF = 20 Vdc, VDS = 0) IGSSF - - 100 nAdc Gate-Body Leakage Current, Reverse (VGSR = 20 Vdc, VDS = 0) IGSSR - - 100 nAdc 2.0 3.0 4.0 ON CHARACTERISTICS* Gate-Threshold Voltage VGS(th) (VDS = VGS, ID = 0.25 mAdc (TJ = 125° C) Static Drain-Source On-Resistance (VGS = 10 Vdc, ID = 5 Adc) rDS(on) Drain-Source On-Voltage (VGS = 10 Vdc) VDS(on) (ID = 10 A) (ID = 5 A, TJ = 125° C) Vdc 1.5 - 3.5 - - 1.3 - - 15 Ohm Vdc - - 15.3 gFS 5.0 - - mhos (VDS = 25 V, VGS = 0, Ciss - 3900 - pF f = 1.0 MHz) Coss - 300 - Crss - 65 - Forward Transconductance (VDS = 15 Vdc, ID = 5 Adc) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Transfer Capacitance SWITCHING CHARACTERISTICS Turn-On Delay Time Rise Time Turn-Off Delay Time td(on) - 40 - (VDD = 250 V, ID = 5 A, tr - 100 - Rgen = 4.3 ohms) td(off) - 100 - tf - 100 - (VDS = 400 V, ID = 10 A, Qg - 100 140 VGS = 10 V) Qgs - 20 - Qgd - 40 - VSD - - 1.5 Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge ns nC SOURCE DRAIN DIODE CHARACTERISTICS Forward On-Voltage Forward Turn-On Time (IS = 10 A, d/dt = 100 A/µs) Reverse Recovery Time ton trr - 600 Vdc ns ** 1000 * Indicates Pulse Test = 300 µsec, Duty Cycle = 2% ** Limited by circuit inductance 3.1 205 Crawford Street, Leominster, MA 01453 USA (508) 534-5776 FAX (508) 537-4246