Diotech MURF2060 Super fast recovery silicon rectifier Datasheet

MURF2005 THRU MURF2060
SUPER FAST RECOVERY SILICON RECTIFIER
Reverse Voltage - 50 to 600 Volts
Forward Current - 20.0 Ampere
FEATURES
ITO-220AC
Glass Passivated Die Construction
4.5± 0.2
Super-Fast Switching
Low Forward Voltage Drop
Low Reverse Leakage Current
High Surge Current Capability
Plastic Material has UL Flammability
Classification 94V-O
10.2± 0.2
2
Case: ITO-220AC, Full Molded Plastic
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
Polarity: See Diagram
Weight: 2.24 grams (approx.)
Mounting Position: Any
Mounting Torque: 11.5 cm-kg (10 in-lbs) Max.
3.3± 0.1
? 3.2± 0.2
PIN
4.0± 0.3
13.5± 0.5
MECHANICAL DATA
1
8.2± 0.2
.
.
16.5± 0.3
15.2± 0.5
3.1+0.2
-0.1
2.6± 0.2
1.4± 0.1
0.6± 0.1
0.6± 0.1
5.0± 0.1
Dimensions in millimeters
PIN 1 +
PIN 3 -
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Symbol
MURF
2005
MURF
2010
MURF
2015
MURF
2020
MURF
2030
MURF
2040
MURF
2060
Unit
VRRM
VRWM
VR
50
100
150
200
300
400
600
V
VR(RMS)
35
70
105
140
210
280
420
V
Average Rectified Output Current
@TC = 100°C
IO
20.0
A
Non-Repetitive Peak Forward Surge
Current 8.3ms Single half sine-wave
superimposed on rated load (JEDEC Method)
IFSM
200
A
Forward Voltage
VFM
@IF = 20.0A
Peak Reverse Current
@TA = 25°C
At Rated DC Blocking Voltage @TA = 125°C
0.95
1.3
1.7
10
400
IRM
V
µA
Reverse Recovery Time (Note 1)
trr
35
50
nS
Typical Junction Capacitance (Note 2)
Cj
170
150
pF
Operating and Storage Temperature Range
Tj, TSTG
Note: 1. Measured with IF = 0.5A, IR = 1.0A, IRR = 0.25A.
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
-65 to +150
°C
MURF2005 THRU MURF2060
RATINGS AND CHARACTERISTIC CURVES
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