FMI12N60ES FUJI POWER MOSFET Super FAP-E3S series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Maintains both low power loss and low noise Lower RDS (on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (4.2±0.5V) High avalanche durability Equivalent circuit schematic T-Pack(L) Drain(D) Applications Gate(G) Source(S) Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum Ratings and Characteristics Absolute Maximum Ratings at Tc=25°C (unless otherwise specified) Description Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Repetitive and Non-Repetitive Maximum AvalancheCurrent Non-Repetitive Maximum Avalanche Energy Repetitive Maximum Avalanche Energy Peak Diode Recovery dV/dt Peak Diode Recovery -di/dt Symbol VDS VDSX ID I DP VGS I AR E AS E AR dV/dt -di/dt Maximum Power Dissipation PD Drain-Source Voltage Characteristics 600 600 ±12 ±48 ±30 12 384 18 4.4 100 1.67 180 150 -55 to + 150 2 Tch Tstg VISO Operating and Storage Temperature range Isolation Voltage Unit V V A A V A mJ mJ kV/µs A/µs Remarks VGS = -30V Note*1 Note*2 Note*3 Note*4 Note*5 Ta=25°C Tc=25°C W °C °C kVrms t = 60sec, f = 60Hz Electrical Characteristics at Tc=25°C (unless otherwise specified) Description Drain-Source Breakdown Voltage Gate Threshold Voltage Symbol BVDSS VGS (th) Zero Gate Voltage Drain Current I DSS Gate-Source Leakage Current Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance I GSS R DS (on) gfs Ciss Coss Crss td(on) tr td(off) tf QG Q GS Q GD Q SW I AV VSD trr Qrr Turn-On Time Turn-Off Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate-Drain Crossover Charge Avalanche Capability Diode Forward On-Voltage Reverse Recovery Time Reverse Recovery Charge Conditions I D =250µA, VGS =0V I D =250µA, VDS =VGS VDS =600V, VGS =0V VDS =480V, VGS =0V VGS =±30V, VDS =0V I D =6A, VGS =10V I D =6A, VDS =25V Tch =25°C Tch =125°C VDS =25V VGS =0V f=1MHz Vcc =300V VGS =10V I D =6A RG =27Ω Vcc =300V I D =12A VGS =10V L=2.64mH, Tch =25°C I F =12A, VGS =0V, Tch =25°C I F =12A, VGS =0V -di/dt=100A/µs, Tch=25°C min. 600 3.7 4 12 - typ. 4.2 10 0.641 8 1300 150 8.5 40 40 74 19 37 15 12 6.5 0.86 0.52 5.5 max. 4.7 25 250 100 0.75 1950 225 13 60 60 111 29 56 23 18 10 1.30 - Unit V V min. typ. max. 0.690 75.0 Unit °C/W °C/W µA nA Ω S pF ns nC A V µS µC Thermal Characteristics Description Thermal resistance Symbol Rth (ch-c) Rth (ch-a) Note *1 : Tch≤150°C Note *2 : Stating Tch=25°C, IAS =5A, L=28.2mH, Vcc=60V, RG =50Ω E AS limited by maximum channel temperature and avalanche current. See to 'Avalanche Energy' graph. Test Conditions Channel to case Channel to ambient Note *3 : Repetitive rating : Pulse width limited by maximum channel temperature. See to the 'Transient Themal impeadance' graph. Note *4 : I F ≤-I D, -di/dt=100A/µs, Vcc≤BVDSS, Tch≤150°C. Note *5 : I F ≤-I D, dv/dt=4.4kV/µs, Vcc≤BVDSS, Tch≤150°C. 1 FMI12N60ES 200 FUJI POWER MOSFET Safe Operating Area ID=f(VDS):Duty=0(Single pulse),Tc=25 °c Allowable Power Dissipation PD=f(Tc) 2 10 t= 1µs 180 160 10µs 1 10 140 100µs 0 100 ID [A] PD [W] 120 80 10 1ms 60 10 40 Power loss waveform : Square waveform -1 PD 20 t 0 0 25 50 75 100 125 10 150 -2 -1 10 10 0 1 Tc [°C] Typical Output Characteristics ID=f(VDS):80 µs pulse test,Tch=25 °C 25 100 20 10V 8.0V 2 10 VDS [V] 10 10 Typical Transfer Characteristic ID=f(VGS):80 µs pulse test,VDS=25V,Tch=25 °C 10 7.5V ID [A] ID[A] 15 7.0V 10 1 6.5V 5 VGS=6.0V 0.1 0 0 100 4 8 12 VDS [V] 16 20 0 24 Typical Transconductance gfs=f(ID):80 µs pulse test,VDS=25V,Tch=25 °C 1.3 2 4 6 VGS[V] 8 VGS=6.0V 6.5V 7V 1.1 RDS(on) [ Ω ] gfs [S] 1 12 Typical Drain-Source on-state Resistance RDS(on)=f(ID):80 µs pulse test,Tch=25 °C 1.2 10 10 8V 10V 20V 1.0 0.9 0.8 0.7 0.6 0.1 0.1 1 10 0.5 100 0 ID [A] 5 10 15 ID [A] 2 20 3 FMI12N60ES 2.5 FUJI POWER MOSFET Drain-Source On-state Resistance RDS(on)=f(Tch):ID=6A,VGS=10V 8 Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=250µA 7 6 VGS(th) [V] RDS(on) [ Ω ] 2.0 1.5 max. 1.0 typ. 5 max. 4 typ. 3 min. 2 0.5 1 0 0.0 -50 -25 0 25 50 Tch [°C] 75 100 125 -50 150 Typical Gate Charge Characteristics VGS=f(Qg):ID=12A,Tch=25 °C 4 14 0 25 50 75 Tch [°C] 100 125 Vcc= 120V 300V 480V Typical Capacitance C=f(VDS):VGS=0V,f=1MHz Ciss 3 10 10 C [pF] 8 2 10 6 Coss 4 1 10 2 Crss 0 0 0 10 20 30 40 50 60 10 70 -2 10 -1 0 10 10 Typical Forward Characteristics of Reverse Diode IF=f(VSD):80 µs pulse test,Tch=25 °C 3 10 10 2 10 Typical Switching Characteristics vs. ID t=f(ID):Vcc=300V,VGS=10V,RG=27 Ω td(off) 2 10 t [ns] IF [A] td(on) 1 0.1 0.00 1 10 VDS [V] Qg [nC] 100 150 10 12 VGS [V] -25 tf tr 1 10 0 0.25 0.50 0.75 1.00 1.25 10 1.50 -1 10 VSD [V] 3 0 10 1 ID [A] 10 2 10 FMI12N60ES FUJI POWER MOSFET Maximum Avalanche Energy vs. starting Tch E(AV)=f(starting Tch):Vcc=60V,I(AV)<=12A 600 10 1 500 Zth(ch- c) [°C/ W] 10 0 IAS=5A 400 EAV [mJ] Transient Thermal Impedance Zth(ch-c)=f(t):D=0 300 IAS=7A 10 -1 10 -2 200 IAS=11A 10 -3 10 -6 100 10 -5 10 -4 10 -3 t [sec] 0 0 25 50 75 100 125 150 starting Tch [°C] 4 10 -2 10 -1 10 0 FMI12N60ES FUJI POWER MOSFET WARNING 1. This Catalog contains the product specifications, characteristics, data, materials, and structures as of October 2008. The contents are subject to change without notice for specification changes or other reasons. When using a product listed in this Catalog, be sure to obtain the latest specifications. 2. All applications described in this Catalog exemplify the use of Fuji's products for your reference only. No right or license, either express or implied, under any patent, copyright, trade secret or other intellectual property right owned by Fuji Electric Device Technology Co., Ltd. is (or shall be deemed) granted. Fuji Electric Device Technology Co., Ltd. makes no representation or warranty, whether express or implied, relating to the infringement or alleged infringement of other's intellectual property rights which may arise from the use of the applications described herein. 3. Although Fuji Electric Device Technology Co., Ltd. is enhancing product quality and reliability, a small percentage of semiconductor products may become faulty. When using Fuji Electric semiconductor products in your equipment, you are requested to take adequate safety measures to prevent the equipment from causing a physical injury, fire, or other problem if any of the products become faulty. It is recommended to make your design fail-safe, flame retardant, and free of malfunction. 4. The products introduced in this Catalog are intended for use in the following electronic and electrical equipment which has normal reliability requirements. • Computers • OA equipment • Communications equipment (terminal devices) • Machine tools • Audiovisual equipment • Electrical home appliances • Personal equipment 5. If you need to use a product in this Catalog for equipment requiring higher reliability than normal, such as for the equipment listed below, it is imperative to contact Fuji Electric Device Technology Co., Ltd. to obtain prior approval. When using these products for such equipment, take adequate measures such as a backup system to prevent the equipment from malfunctioning even if a Fuji's product incorporated in the equipment becomes faulty. • Transportation equipment (mounted on cars and ships) • Trunk communications equipment • Traffic-signal control equipment • Gas leakage detectors with an auto-shut-off feature • Emergency equipment for responding to disasters and anti-burglary devices • Safety devices • Medical equipment 6. 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