EIC HER506 High efficient rectifier diode Datasheet

HER501 - HER508
HIGH EFFICIENT
RECTIFIER DIODES
PRV : 50 - 1000 Volts
Io : 5.0 Amperes
DO-201AD
FEATURES :
*
*
*
*
*
*
High current capability
High surge current capability
High reliability
Low reverse current
Low forward voltage drop
Fast switching for high efficiency
1.00 (25.4)
MIN.
0.21 (5.33)
0.19 (4.82)
0.375 (9.52)
0.285 (7.24)
MECHANICAL DATA :
1.00 (25.4)
MIN.
0.052 (1.32)
0.048 (1.22)
* Case : DO-201AD Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202,
Method 208 guaranteed
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 1.16 grams
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Maximum Recurrent Peak Reverse Voltage
VRRM
HER
501
50
Maximum RMS Voltage
VRMS
35
70
140
210
280
420
560
700
V
Maximum DC Blocking Voltage
VDC
50
100
200
300
400
600
800
1000
V
RATING
SYMBOL
Maximum Average Forward Current
0.375"(9.5mm) Lead Length
Ta = 55 °C
HER
502
100
HER
503
200
HER
504
300
HER
505
400
HER
506
600
HER
507
800
HER
508
1000
UNIT
V
IF(AV)
5.0
A
IFSM
200
A
Maximum Peak Forward Surge Current,
8.3ms Single half sine wave superimposed
on rated load (JEDEC Method)
Maximum Forward Voltage at IF = 5.0 A
Maximum DC Reverse Current
Ta = 25 °C
at Rated DC Blocking Voltage
Ta = 100 °C
VF
1.1
1.7
V
IR
10
µA
IR(H)
50
µA
Maximum Reverse Recovery Time ( Note 1 )
Trr
50
75
50
ns
Typical Junction Capacitance ( Note 2 )
CJ
Junction Temperature Range
TJ
- 65 to + 150
°C
pf
Storage Temperature Range
TSTG
- 65 to + 150
°C
Notes :
( 1 ) Reverse Recovery Test Conditions : IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A.
( 2 ) Measured at 1.0 MHz and applied reverse voltage of 4.0 VDC
Page 1 of 2
Rev. 01 : April 2, 2002
RATING AND CHARACTERISTIC CURVES ( HER501 - HER508 )
FIG.1 - REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
50 Ω
Trr
10 Ω
+ 0.5 A
D.U.T.
+
0
PULSE
GENERATOR
( NOTE 2 )
50 Vdc
(approx)
1Ω
- 0.25 A
OSCILLOSCOPE
( NOTE 1 )
- 1.0 A
SET TIME BASE FOR 25-35 ns/cm
NOTES : 1. Rise Time = 7 ns max., Input Impedance = 1 megaohm, 22 pF.
1 cm
2. Rise time = 10 ns max., Source Impedance = 50 ohms.
3. All Resistors = Non-inductive Types.
FIG.2 - DERATING CURVE FOR OUTPUT
RECTIFIED CURRENT
FIG.3 - MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
200
PEAK FORWARD SURGE
CURRENT, AMPERES
AVERAGE FORWARD OUTPUT
CURRENT, AMPERES
5
4
3
2
1
8.3 ms SINGLE HALF SINE WAVE
Ta = 50 °C
160
120
80
40
60Hz RESISTIVE OR INDUCTIVE LOAD
0
0
25
50
75
100
125
150
0
175
1
2
AMBIENT TEMPERATURE, ( °C)
100
FORWARD CURRENT, AMPERES
6
10
20
40
60 100
FIG.5 - TYPICAL REVERSE CHARACTERISTICS
REVERSE CURRENT, MICROAMPERES
FIG.4 - TYPICAL FORWARD CHARACTERISTICS
Pulse Width = 300 µs
2% Duty Cycle
TJ = 25 °C
10
HER501-HER505
HER506-HER508
1.0
4
NUMBER OF CYCLES AT 60Hz
0.1
10
TJ = 100 °C
1.0
0.1
TJ = 25 °C
0.01
0
20
40
60
80
100
120
140
PERCENT OF RATED REVERSE
VOLTAGE, (%)
0.01
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
FORWARD VOLTAGE, VOLTS
Page 2 of 2
Rev. 01 : April 2, 2002
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