MAC997 Series Preferred Device Sensitive Gate Triacs Silicon Bidirectional Thyristors Designed for use in solid state relays, MPU interface, TTL logic and any other light industrial or consumer application. Supplied in an inexpensive TO–92 package which is readily adaptable for use in automatic insertion equipment. • One–Piece, Injection–Molded Package • Blocking Voltage to 600 Volts • Sensitive Gate Triggering in Four Trigger Modes (Quadrants) for all possible Combinations of Trigger Sources, and especially for Circuits that Source Gate Drives • All Diffused and Glassivated Junctions for Maximum Uniformity of Parameters and Reliability • Improved Noise Immunity (dv/dt Minimum of 20 V/µsec at 110°C) • Commutating di/dt of 1.6 Amps/msec at 110°C • High Surge Current of 8 Amps • Device Marking: Device Type, e.g., for MAC997A6: MAC7A6, Date Code http://onsemi.com TRIACS 0.8 AMPERE RMS 400 thru 600 VOLTS MT2 MT1 G MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Peak Repetitive Off-State Voltage (TJ = –40 to +110°C)(1) Sine Wave 50 to 60 Hz, Gate Open MAC997A6,B6 MAC997A8,B8 VDRM, VRRM On-State RMS Current Full Cycle Sine Wave 50 to 60 Hz (TC = +50°C) IT(RMS) Peak Non–Repetitive Surge Current One Full Cycle, Sine Wave 60 Hz (TC = 110°C) ITSM Value Unit 400 600 0.8 8.0 Amps A2s Peak Gate Voltage (t 2.0 ms, TC = +80°C) VGM 5.0 Volts Peak Gate Power (t 2.0 ms, TC = +80°C) PGM 5.0 Watts Average Gate Power (TC = 80°C, t 8.3 ms) PG(AV) 0.1 Watt Peak Gate Current (t 2.0 ms, TC = +80°C) IGM 1.0 Amp TJ –40 to +110 °C Tstg –40 to +150 °C v v v Operating Junction Temperature Range Storage Temperature Range 3 PIN ASSIGNMENT .26 v 2 TO–92 (TO–226AA) CASE 029 STYLE 12 Amp I2t Circuit Fusing Considerations (t = 8.3 ms) 1 Volts 1 Main Terminal 1 2 Gate 3 Main Terminal 2 ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 8 of this data sheet. Preferred devices are recommended choices for future use and best overall value. (1) VDRM and VRRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. Semiconductor Components Industries, LLC, 2000 May, 2000 – Rev. 2 1 Publication Order Number: MAC997/D MAC997 Series THERMAL CHARACTERISTICS Symbol Max Unit Thermal Resistance, Junction to Case Characteristic RθJC 75 °C/W Thermal Resistance, Junction to Ambient RθJA 200 °C/W TL 260 °C Maximum Lead Temperature for Soldering Purposes for 10 Seconds ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted; Electricals apply in both directions) Characteristic Symbol Min Typ Max Unit — — — — 10 100 µA µA — — 1.9 Volts OFF CHARACTERISTICS Peak Repetitive Blocking Current (VD = Rated VDRM, VRRM; Gate Open) IDRM, IRRM TJ = 25°C TJ = +110°C ON CHARACTERISTICS Peak On–State Voltage (ITM = .85 A Peak; Pulse Width " v 2.0 ms, Duty Cycle v 2.0%) Gate Trigger Current (Continuous dc) (VD = 12 Vdc, RL = 100 Ohms) MT2(+), G(+) MAC997A6,A8 MT2(+), G(–) MT2(–), G(–) MT2(–), G(+) MT2(+), G(+) MT2(+), G(–) MT2(–), G(–) MT2(–), G(+) VTM IGT MAC997B6,B8 Latching Current (VD = 12 V, IG = 10 mA) MT2(+), G(+) All Types MT2(+), G(–) All Types MT2(–), G(–) All Types MT2(–), G(+) All Types mA — — — — — — — — 5.0 5.0 5.0 7.0 — — — — — — — — 3.0 3.0 3.0 5.0 — — — — 1.6 10.5 1.5 2.5 15 20 15 15 IL Gate Trigger Voltage (Continuous dc) (VD = 12 Vdc, RL = 100 Ohms) MT2(+), G(+) All Types MT2(+), G(–) All Types MT2(–), G(–) All Types MT2(–), G(+) All Types VGT Gate Non–Trigger Voltage (VD = 12 V, RL = 100 Ohms, TJ = 110°C) All Four Quadrants mA Volts — — — — .66 .77 .84 .88 2.0 2.0 2.0 2.5 VGD 0.1 — — Volts Holding Current (VD = 12 Vdc, Initiating Current = 200 mA, Gate Open) IH — 1.5 10 mA Turn-On Time (VD = Rated VDRM, ITM = 1.0 A pk, IG = 25 mA) tgt — 2.0 — µs Rate of Change of Commutating Current (VD = 400 V, ITM = .84 A, Commutating dv/dt = 1.5 V/µs, Gate Open, TJ = 110°C, f = 250 Hz, with Snubber) di/dt(c) 1.6 — — A/ms Critical Rate of Rise of Off–State Voltage (VD = Rated VDRM, Exponential Waveform, Gate Open, TJ = 110°C) dv/dt 20 60 — V/µs Repetitive Critical Rate of Rise of On–State Current Pulse Width = 20 µs, IPKmax = 15 A, diG/dt = 1 A/µs, f = 60 Hz di/dt — — 10 A/µs DYNAMIC CHARACTERISTICS http://onsemi.com 2 MAC997 Series Voltage Current Characteristic of Triacs (Bidirectional Device) + Current Symbol Parameter VDRM IDRM Peak Forward Blocking Current VRRM IRRM VTM IH VTM Peak Repetitive Forward Off State Voltage Quadrant 1 MainTerminal 2 + on state IH IRRM at VRRM Peak Repetitive Reverse Off State Voltage Peak Reverse Blocking Current Maximum On State Voltage off state IH Holding Current Quadrant 3 VTM MainTerminal 2 – Quadrant Definitions for a Triac MT2 POSITIVE (Positive Half Cycle) + (+) MT2 Quadrant II (+) MT2 (–) IGT GATE Quadrant I (+) IGT GATE MT1 MT1 REF REF IGT – + IGT (–) MT2 Quadrant III (–) MT2 Quadrant IV (+) IGT GATE (–) IGT GATE MT1 MT1 REF REF – MT2 NEGATIVE (Negative Half Cycle) All polarities are referenced to MT1. With in–phase signals (using standard AC lines) quadrants I and III are used. http://onsemi.com 3 + Voltage IDRM at VDRM MAC997 Series 110 P(AV), MAXIMUM AVERAGE POWER DISSIPATION (WATTS) I T(RMS) , MAXIMUM ALLOWABLE AMBIENT TEMPERATURE (°C) T = 30° 100 60° 90 DC 90° 80 180° 70 120° 60 α 50 α 40 30 α = CONDUCTION ANGLE 0.1 0.2 0.3 60° 90 0.4 0.5 0.6 0.7 0.8 90° DC 80 180° 70 120° 60 α 50 α 40 20 0 T = 30° 100 30 α = CONDUCTION ANGLE 0 0.05 0.1 0.15 0.2 0.25 0.3 IT(RMS), RMS ON–STATE CURRENT (AMPS) IT(RMS), RMS ON–STATE CURRENT (AMPS) Figure 1. RMS Current Derating Figure 2. RMS Current Derating 1.2 0.35 0.4 5.2 6.0 6.0 4.0 α 1.0 DC α TJ = 110°C 180° 0.8 2.0 α = CONDUCTION ANGLE 25°C 120° 0.6 1.0 0.4 ITM, INSTANTANEOUS ON-STATE CURRENT (AMP) TC, MAXIMUM ALLOWABLE CASE TEMPERATURE (°C) 110 90° 0.2 0 T = 30° 0 0.1 0.2 0.3 0.4 0.5 60° 0.6 0.7 0.8 IT(RMS), RMS ON–STATE CURRENT (AMPS) Figure 3. Power Dissipation 0.6 0.4 0.2 0.1 0.06 0.04 0.02 0.01 0.006 0.4 1.2 2.0 2.8 3.6 4.4 VTM, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS) Figure 4. On–State Characteristics http://onsemi.com 4 R(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) MAC997 Series 10 Q I TSM , PEAK SURGE CURRENT (AMPS) 1.0 Q Z JC(t) = R JC(t) @ r(t) 0.1 0.01 0.1 1.0 10 1S103 100 5.0 3.0 TJ = 110°C f = 60 Hz 2.0 Surge is preceded and followed by rated current. 1.0 1.0 1S104 2.0 3.0 5.0 30 10 50 100 NUMBER OF CYCLES t, TIME (ms) Figure 5. Transient Thermal Response Figure 6. Maximum Allowable Surge Current 100 1.2 VGT, GATE TRIGGER VOLTAGE (V) I GT , GATE TRIGGER CURRENT (mA) CYCLE Q4 10 Q3 Q2 Q1 1 1.1 Q4 1.0 Q3 0.9 Q2 0.8 Q1 0.7 0.6 0.5 0.4 0 –40 –25 –10 5 20 35 50 65 80 95 0.3 –40 –25 110 5 20 35 50 65 80 95 TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C) Figure 7. Typical Gate Trigger Current versus Junction Temperature Figure 8. Typical Gate Trigger Voltage versus Junction Temperature 100 110 10 10 IH , HOLDING CURRENT (mA) IL , LATCHING CURRENT (mA) –10 Q2 Q3 Q4 1 Q1 0 –40 –25 –10 5 20 35 50 65 80 95 MT2 Negative 1 MT2 Positive 0.1 –40 –25 110 –10 5 20 35 50 65 80 95 TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C) Figure 9. Typical Latching Current versus Junction Temperature Figure 10. Typical Holding Current versus Junction Temperature http://onsemi.com 5 110 MAC997 Series LL 200 VRMS ADJUST FOR ITM, 60 Hz VAC MEASURE I TRIGGER CHARGE CONTROL NON-POLAR CL TRIGGER CONTROL CHARGE 1N4007 RS – CS 1N914 51 W MT2 ADJUST FOR + di/dt(c) 200 V MT1 G Note: Component values are for verification of rated (di/dt)c. See AN1048 for additional information. Figure 11. Simplified Test Circuit to Measure the Critical Rate of Rise of Commutating Current (di/dt)c http://onsemi.com 6 MAC997 Series TO–92 EIA RADIAL TAPE IN FAN FOLD BOX OR ON REEL H2A H2A H2B H2B H W2 H4 H5 T1 L1 H1 W1 W L T T2 F1 F2 P2 D P2 P1 P Figure 12. Device Positioning on Tape Specification Inches Symbol Item Millimeter Min Max Min Max 0.1496 0.1653 3.8 4.2 D Tape Feedhole Diameter D2 Component Lead Thickness Dimension 0.015 0.020 0.38 0.51 Component Lead Pitch 0.0945 0.110 2.4 2.8 F1, F2 H Bottom of Component to Seating Plane H1 Feedhole Location .059 .156 1.5 4.0 0.3346 0.3741 8.5 9.5 1.0 H2A Deflection Left or Right 0 0.039 0 H2B Deflection Front or Rear 0 0.051 0 1.0 0.7086 0.768 18 19.5 H4 Feedhole to Bottom of Component H5 Feedhole to Seating Plane 0.610 0.649 15.5 16.5 L Defective Unit Clipped Dimension 0.3346 0.433 8.5 11 L1 Lead Wire Enclosure 0.09842 — 2.5 — P Feedhole Pitch 0.4921 0.5079 12.5 12.9 P1 Feedhole Center to Center Lead 0.2342 0.2658 5.95 6.75 First Lead Spacing Dimension 0.1397 0.1556 3.55 3.95 0.06 0.08 0.15 0.20 — 0.0567 — 1.44 P2 T Adhesive Tape Thickness T1 Overall Taped Package Thickness T2 Carrier Strip Thickness 0.014 0.027 0.35 0.65 W Carrier Strip Width 0.6889 0.7481 17.5 19 W1 Adhesive Tape Width 0.2165 0.2841 5.5 6.3 W2 Adhesive Tape Position .0059 0.01968 .15 0.5 NOTES: 1. Maximum alignment deviation between leads not to be greater than 0.2 mm. 2. Defective components shall be clipped from the carrier tape such that the remaining protrusion (L) does not exceed a maximum of 11 mm. 3. Component lead to tape adhesion must meet the pull test requirements. 4. Maximum non–cumulative variation between tape feed holes shall not exceed 1 mm in 20 pitches. 5. Holddown tape not to extend beyond the edge(s) of carrier tape and there shall be no exposure of adhesive. 6. No more than 1 consecutive missing component is permitted. 7. A tape trailer and leader, having at least three feed holes is required before the first and after the last component. 8. Splices will not interfere with the sprocket feed holes. http://onsemi.com 7 MAC997 Series ORDERING & SHIPPING INFORMATION: MAC97 Series packaging options, Device Suffix U.S. Europe Equivalent Shipping Description of TO92 Tape Orientation Radial Tape and Reel (2K/Reel) Flat side of TO92 and adhesive tape visible MAC997A6,A8 MAC997B6,B8 Bulk in Box (5K/Box) N/A, Bulk MAC997A6RLRP, A8RLRP MAC997B6RLRP, B8RLRP Radial Tape and Fan Fold Box (2K/Box) Round side of TO92 and adhesive tape visible MAC997A6RL1, A8RL1 MAC997B6RL1, B8RL1 http://onsemi.com 8 MAC997 Series PACKAGE DIMENSIONS TO–92 (TO–226AA) CASE 029–11 ISSUE AJ A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. B R P L SEATING PLANE K DIM A B C D G H J K L N P R V D X X G J H V C SECTION X–X 1 N N INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 ––– 0.250 ––– 0.080 0.105 ––– 0.100 0.115 ––– 0.135 ––– MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 ––– 6.35 ––– 2.04 2.66 ––– 2.54 2.93 ––– 3.43 ––– STYLE 12: PIN 1. MAIN TERMINAL 1 2. GATE 3. MAIN TERMINAL 2 http://onsemi.com 9 MAC997 Series Notes http://onsemi.com 10 MAC997 Series Notes http://onsemi.com 11 MAC997 Series ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. 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