PD - 97451
AUTOMOTIVE GRADE
HEXFET® Power MOSFET
Features
l
l
l
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AUIRFR3710Z
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
D
G
S
Description
V(BR)DSS
100V
RDS(on) max.
18mΩ
ID (Silicon Limited)
56A
ID (Package Limited)
42A
D
Specifically designed for Automotive applications, this
HEXFET® Power MOSFET utilizes the latest processing
techniques to achieve extremely low on-resistance per
silicon area. Additional features of this design are a
175°C junction operating temperature, fast switching
speed and improved repetitive avalanche rating . These
features combine to make this design an extremely
efficient and reliable device for use in Automotive applications and a wide variety of other applications.
S
G
D-Pak
AUIRFR3710Z
G
D
S
Gate
Drain
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in
the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (T A) is 25°C, unless otherwise specified.
Max.
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TC = 25°C
IDM
PD @TC = 25°C
VGS
EAS
EAS (tested )
IAR
EAR
TJ
TSTG
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V (Package Limited)
c
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited)
Single Pulse Avalanche Energy Tested Value
Avalanche Current
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case )
c
h
g
d
Units
56
39
42
220
140
0.95
± 20
150
200
See Fig.12a, 12b, 15, 16
A
W
W/°C
V
mJ
A
mJ
-55 to + 175
°C
300
Thermal Resistance
RθJC
RθJA
RθJA
j
Parameter
Junction-to-Case
Junction-to-Ambient (PCB mount)
Junction-to-Ambient
i
Typ.
Max.
Units
–––
–––
–––
1.05
50
110
°C/W
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
02/10/2010
AUIRFR3710Z
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)DSS
∆V(BR)DSS/∆TJ
RDS(on)
VGS(th)
gfs
IDSS
IGSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Min. Typ. Max. Units
100
–––
–––
2.0
39
–––
–––
–––
–––
–––
0.088
15
–––
–––
–––
–––
–––
–––
–––
–––
18
4.0
–––
20
250
200
-200
Conditions
V VGS = 0V, ID = 250µA
V/°C Reference to 25°C, ID = 1mA
mΩ VGS = 10V, ID = 33A
V VDS = VGS, ID = 250µA
S VDS = 25V, ID = 33A
µA VDS = 100V, VGS = 0V
VDS = 100V, VGS = 0V, TJ = 125°C
nA VGS = 20V
VGS = -20V
e
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LD
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
–––
–––
–––
–––
–––
–––
–––
–––
69
15
25
14
43
53
42
4.5
100
–––
–––
–––
–––
–––
–––
–––
LS
Internal Source Inductance
–––
7.5
–––
6mm (0.25in.)
from package
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
–––
–––
–––
–––
–––
–––
2930
290
180
1200
180
430
–––
–––
–––
–––
–––
–––
S
and center of die contact
VGS = 0V
VDS = 25V
ƒ = 1.0MHz
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 0V, VDS = 80V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 80V
nC
ns
nH
pF
ID = 33A
VDS = 80V
VGS = 10V
VDD = 50V
ID = 33A
RG = 6.8 Ω
VGS = 10V
Between lead,
e
e
D
G
f
Diode Characteristics
Parameter
Min. Typ. Max. Units
IS
Continuous Source Current
–––
–––
56
ISM
(Body Diode)
Pulsed Source Current
–––
–––
220
VSD
trr
Qrr
ton
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
2
c
A
–––
–––
–––
–––
35
41
1.3
53
62
Conditions
MOSFET symbol
V
ns
nC
D
showing the
integral reverse
G
S
p-n junction diode.
TJ = 25°C, IS = 33A, VGS = 0V
TJ = 25°C, IF = 33A, VDD = 50V
di/dt = 100A/µs
e
e
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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AUIRFR3710Z
Qualification Information
†
Automotive
(per AEC-Q101)
Qualification Level
Moisture Sensitivity Level
Machine Model
††
Comments: This part number(s) passed Automotive qualification. IR’s
Industrial and Consumer qualification level is granted by extension of the
higher Automotive level.
D-PAK
MSL1
Class M4
AEC-Q101-002
ESD
Human Body Model
Charged Device
Model
RoHS Compliant
Class H1C
AEC-Q101-001
Class C3
AEC-Q101-005
Yes
Qualification standards can be found at International Rectifiers web site: http//www.irf.com/
Exceptions to AEC-Q101 requirements are noted in the qualification report.
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3
AUIRFR3710Z
1000
1000
100
BOTTOM
TOP
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
TOP
VGS
15V
10V
6.0V
5.0V
4.8V
4.5V
4.3V
4.0V
100
10
4.0V
60µs PULSE WIDTH
Tj = 25°C
1
0.1
1
10
BOTTOM
4.0V
10
1
60µs PULSE WIDTH
Tj = 175°C
0.1
100
0.1
V DS, Drain-to-Source Voltage (V)
100
TJ = 25°C
VDS = 25V
60µs PULSE WIDTH
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
Gfs, Forward Transconductance (S)
ID, Drain-to-Source Current (Α)
100
100
T J = 175°C
4
10
Fig 2. Typical Output Characteristics
1000
1.0
1
V DS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
10
VGS
15V
10V
6.0V
5.0V
4.8V
4.5V
4.3V
4.0V
T J = 25°C
80
60
TJ = 175°C
40
20
V DS = 10V
0
0
10
20
30
40
50
60
70
80
ID,Drain-to-Source Current (A)
Fig 4. Typical Forward Transconductance
vs. Drain Current
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nce
AUIRFR3710Z
100000
12.0
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
ID= 33A
C oss = C ds + C gd
10000
C, Capacitance(pF)
VGS, Gate-to-Source Voltage (V)
C rss = C gd
Ciss
1000
Coss
Crss
100
10.0
VDS= 80V
VDS= 50V
VDS= 20V
8.0
6.0
4.0
2.0
0.0
10
1
10
100
0
VDS, Drain-to-Source Voltage (V)
1000
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
10.00
T J = 25°C
VGS = 0V
0.10
0.4
0.6
0.8
1.0
1.2
1.4
1.6
VSD, Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
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40
50
60
70
80
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100
T J = 175°C
0.2
30
Fig 6. Typical Gate Charge vs.
Gate-to-Source Voltage
1000.00
1.00
20
QG Total Gate Charge (nC)
Fig 5. Typical Capacitance vs.
Drain-to-Source Voltage
100.00
10
1.8
100µsec
10
1msec
1
Tc = 25°C
Tj = 175°C
Single Pulse
10msec
0.1
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
5
AUIRFR3710Z
60
Limited By Package
50
ID, Drain Current (A)
RDS(on) , Drain-to-Source On Resistance
(Normalized)
3.0
40
30
20
10
0
ID = 56A
VGS = 10V
2.5
2.0
1.5
1.0
0.5
25
50
75
100
125
150
-60 -40 -20 0
175
T C , Case Temperature (°C)
20 40 60 80 100 120 140 160 180
T J , Junction Temperature (°C)
Fig 10. Normalized On-Resistance
vs. Temperature
Fig 9. Maximum Drain Current vs.
Case Temperature
Thermal Response ( Z thJC )
10
1
D = 0.50
0.20
0.10
0.05
0.02
0.01
0.1
0.01
τJ
τJ
τ1
R2
R2
τ2
τ1
τ2
Ci= τi/Ri
Ci i/Ri
SINGLE PULSE
( THERMAL RESPONSE )
0.001
R1
R1
R3
R3
τ3
τC
τ
τ3
Ri (°C/W) τi (sec)
0.576
0.000540
0.249
0.224
0.001424
0.007998
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6
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AUIRFR3710Z
700
DRIVER
L
VDS
D.U.T
RG
+
V
- DD
IAS
VGS
20V
tp
A
0.01Ω
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
EAS , Single Pulse Avalanche Energy (mJ)
15V
ID
TOP
3.4A
4.8A
BOTTOM 33A
600
500
400
300
200
100
0
25
50
75
100
125
150
175
Starting T J , Junction Temperature (°C)
I AS
Fig 12c. Maximum Avalanche Energy
vs. Drain Current
Fig 12b. Unclamped Inductive Waveforms
QG
10 V
QGS
QGD
VG
Charge
Fig 13a. Basic Gate Charge Waveform
L
DUT
0
1K
Fig 13b. Gate Charge Test Circuit
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VCC
VGS(th) Gate threshold Voltage (V)
4.0
3.0
ID = 250µA
2.0
1.0
-75 -50 -25
0
25
50
75 100 125 150 175 200
T J , Temperature ( °C )
Fig 14. Threshold Voltage vs. Temperature
7
AUIRFR3710Z
1000
Avalanche Current (A)
Duty Cycle = Single Pulse
100
Allowed avalanche Current vs
avalanche pulsewidth, tav
assuming ∆ Tj = 25°C due to
avalanche losses
0.01
10
0.05
0.10
1
0.1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 15. Typical Avalanche Current vs.Pulsewidth
EAR , Avalanche Energy (mJ)
200
TOP
Single Pulse
BOTTOM 1% Duty Cycle
ID = 33A
150
100
50
0
25
50
75
100
125
150
Starting T J , Junction Temperature (°C)
Fig 16. Maximum Avalanche Energy
vs. Temperature
8
175
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of T jmax. This is validated for
every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is
not exceeded.
3. Equation below based on circuit and waveforms shown in
Figures 12a, 12b.
4. PD (ave) = Average power dissipation per single
avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for
voltage increase during avalanche).
6. Iav = Allowable avalanche current.
7. ∆T = Allowable rise in junction temperature, not to exceed
Tjmax (assumed as 25°C in Figure 15, 16).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav ) = Transient thermal resistance, see figure 11)
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
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AUIRFR3710Z
D.U.T
Driver Gate Drive
+
-
-
P.W.
Period
*
D.U.T. ISD Waveform
Reverse
Recovery
Current
+
• dv/dt controlled by RG
• Driver same type as D.U.T.
• I SD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
D=
VGS=10V
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
RG
Period
P.W.
+
V DD
+
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
-
Body Diode
VDD
Forward Drop
Inductor Curent
Ripple ≤ 5%
*
ISD
VGS = 5V for Logic Level Devices
Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
V DS
V GS
RG
RD
D.U.T.
+
-V DD
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 18a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on)
tr
t d(off)
tf
Fig 18b. Switching Time Waveforms
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9
AUIRFR3710Z
D-Pak (TO-252AA) Package Outline
Dimensions are shown in millimeters (inches)
D-Pak Part Marking Information
Part Number
AUFR3710Z
YWWA
IR Logo
XX
or
Date Code
Y= Year
WW= Work Week
A= Automotive, LeadFree
XX
Lot Code
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
10
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AUIRFR3710Z
D-Pak (TO-252AA) Tape & Reel Information
Dimensions are shown in millimeters (inches)
TR
TRR
16.3 ( .641 )
15.7 ( .619 )
12.1 ( .476 )
11.9 ( .469 )
FEED DIRECTION
TRL
16.3 ( .641 )
15.7 ( .619 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
13 INCH
16 mm
NOTES :
1. OUTLINE CONFORMS TO EIA-481.
Notes:
Repetitive rating; pulse width limited by
Limited by TJmax , see Fig.12a, 12b, 15, 16 for
max. junction temperature. (See fig. 11).
typical repetitive avalanche performance.
Limited by TJmax, starting TJ = 25°C, L = 0.28mH This value determined from sample failure population, starting
RG = 25Ω, IAS = 33A, VGS =10V. Part not
TJ = 25°C, L = 0.28mH, RG = 25Ω, IAS = 33A, VGS =10V.
recommended for use above this value.
When mounted on 1" square PCB (FR-4 or G-10 Material) .
For recommended footprint and soldering techniques refer to
Pulse width ≤ 1.0ms; duty cycle ≤ 2%.
application note #AN-994.
Coss eff. is a fixed capacitance that gives the
Rθ is measured at TJ approximately 90°C.
same charging time as Coss while VDS is rising
from 0 to 80% VDSS .
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11
AUIRFR3710Z
Ordering Information
Base part
AUIRFR3710Z
12
Package Type
Dpak
Standard Pack
Form
Tube
Tape and Reel
Tape and Reel Left
Tape and Reel Right
Complete Part Number
Quantity
75
2000
3000
3000
AUIRFR3710Z
AUIRFR3710ZTR
AUIRFR3710ZTRL
AUIRFR3710ZTRR
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AUIRFR3710Z
IMPORTANT NOTICE
Unless specifically designated for the automotive market, International Rectifier Corporation and its
subsidiaries (IR) reserve the right to make corrections, modifications, enhancements, improvements, and
other changes to its products and services at any time and to discontinue any product or services without
notice. Part numbers designated with the “AU” prefix follow automotive industry and / or customer specific
requirements with regards to product discontinuance and process change notification. All products are sold
subject to IR’s terms and conditions of sale supplied at the time of order acknowledgment.
IR warrants performance of its hardware products to the specifications applicable at the time of sale in
accordance with IR’s standard warranty. Testing and other quality control techniques are used to the extent
IR deems necessary to support this warranty. Except where mandated by government requirements, testing
of all parameters of each product is not necessarily performed.
IR assumes no liability for applications assistance or customer product design. Customers are responsible
for their products and applications using IR components. To minimize the risks with customer products and
applications, customers should provide adequate design and operating safeguards.
Reproduction of IR information in IR data books or data sheets is permissible only if reproduction is without
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or liable for such altered documentation. Information of third parties may be subject to additional restrictions.
Resale of IR products or serviced with statements different from or beyond the parameters stated by IR for
that product or service voids all express and any implied warranties for the associated IR product or service
and is an unfair and deceptive business practice. IR is not responsible or liable for any such statements.
IR products are not designed, intended, or authorized for use as components in systems intended for surgical
implant into the body, or in other applications intended to support or sustain life, or in any other application
in which the failure of the IR product could create a situation where personal injury or death may occur. Should
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For technical support, please contact IR’s Technical Assistance Center
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WORLD HEADQUARTERS:
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Tel: (310) 252-7105
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13