Diodes SMD Type Zener Diodes BZT55B2V4 ~ BZT55B75 LL-34 Unit: mm ■ Features ● Very sharp reverse characteristic ● Low reverse current level 1.50 1.30 2.64REF 0.50 0.35 ● Very high stability ● Low noise 3.60 3.30 CATHODE BAND ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit VF 1.5 V Zener current IZ Pv/Vz mA Power Dissipation @ RθJA≤300 ℃/W PD 500 mW RθJA 500 ℃/W Forward voltage @ IF=200mA Thermal Resistance Junction to Ambient Junction Temperature Storage Temperature range TJ 175 Tstg -65 to 175 ℃ www.kexin.com.cn 1 Diodes SMD Type Zener Diodes BZT55B2V4 ~ BZT55B75 ■ Electrical Characteristics Ta = 25℃ ZENER VOLTAGE RANGE (1) VZ at I ZT1 PART NUMBER TEST CURRENT IZT1 V BZT55B2V4 IZT2 REVERSE LEAKAGE CURRENT IR at V R Tamb = 25 °C mA MIN. NOM. MAX. 2.35 2.4 2.45 5 1 < 50 Z Z at I ZT1 Tamb = 150 °C µA V < 100 TEMPERATURE COEFFICIENT Z ZK at I ZT2 TK VZ f = 1 kHz 1 Ω %/K MAX. MAX. MIN. MAX. < 85 < 600 - 0.09 - 0.06 - 0.06 BZT55B2V7 2.64 2.7 2.76 5 1 < 10 < 50 1 < 85 < 600 - 0.09 BZT55B3V0 2.94 3.0 3.06 5 1 <4 < 40 1 < 90 < 600 - 0.08 - 0.05 BZT55B3V3 3.24 3.3 3.36 5 1 <2 < 40 1 < 90 < 600 - 0.08 - 0.05 BZT55B3V6 3.52 3.6 3.68 5 1 <2 < 40 1 < 90 < 600 - 0.08 - 0.05 BZT55B3V9 3.82 3.9 3.98 5 1 <2 < 40 1 < 90 < 600 - 0.08 - 0.05 - 0.03 BZT55B4V3 4.22 4.3 4.38 5 1 <1 < 20 1 < 90 < 600 - 0.06 BZT55B4V7 4.6 4.7 4.8 5 1 < 0.5 < 10 1 < 80 < 600 - 0.05 0.02 BZT55B5V1 5 5.1 5.2 5 1 < 0.1 <2 1 < 60 < 550 - 0.02 0.02 0.05 BZT55B5V6 5.48 5.6 5.72 5 1 < 0.1 <2 1 < 40 < 450 - 0.05 BZT55B6V2 6.08 6.2 6.32 5 1 < 0.1 <2 2 < 10 < 200 0.03 0.06 BZT55B6V8 6.66 6.8 6.94 5 1 < 0.1 <2 3 <8 < 150 0.03 0.07 BZT55B7V5 7.35 7.5 7.65 5 1 < 0.1 <2 5 <7 < 50 0.03 0.07 BZT55B8V2 8.04 8.2 8.36 5 1 < 0.1 <2 6.2 <7 < 50 0.03 0.08 0.09 BZT55B9V1 8.92 9.1 9.28 5 1 < 0.1 <2 6.8 < 10 < 50 0.03 BZT55B10 9.8 10 10.2 5 1 < 0.1 <2 7.5 < 15 < 70 0.03 0.1 BZT55B11 10.78 11 11.22 5 1 < 0.1 <2 8.2 < 20 < 70 0.03 0.11 BZT55B12 11.76 12 12.24 5 1 < 0.1 <2 9.1 < 20 < 90 0.03 0.11 BZT55B13 12.74 13 13.26 5 1 < 0.1 <2 10 < 26 < 110 0.03 0.11 BZT55B15 14.7 15 15.3 5 1 < 0.1 <2 11 < 30 < 110 0.03 0.11 BZT55B16 15.7 16 16.3 5 1 < 0.1 <2 12 < 40 < 170 0.03 0.11 0.11 BZT55B18 17.64 18 18.36 5 1 < 0.1 <2 13 < 50 < 170 0.03 BZT55B20 19.6 20 20.4 5 1 < 0.1 <2 15 < 55 < 220 0.03 0.11 BZT55B22 21.55 22 22.45 5 1 < 0.1 <2 16 < 55 < 220 0.04 0.12 BZT55B24 23.5 24 24.5 5 1 < 0.1 <2 18 < 80 < 220 0.04 0.12 BZT55B27 26.4 27 27.6 5 1 < 0.1 <2 20 < 80 < 220 0.04 0.12 BZT55B30 29.4 30 30.6 5 1 < 0.1 <2 22 < 80 < 220 0.04 0.12 BZT55B33 32.4 33 33.6 5 1 < 0.1 <2 24 < 80 < 220 0.04 0.12 BZT55B36 35.3 36 36.7 5 1 < 0.1 <2 27 < 80 < 220 0.04 0.12 BZT55B39 38.2 39 39.8 2.5 1 < 0.1 <5 30 < 90 < 500 0.04 0.12 0.12 BZT55B43 42.1 43 43.9 2.5 0.5 < 0.1 <5 33 < 90 < 600 0.04 BZT55B47 46.1 47 47.9 2.5 0.5 < 0.1 <5 36 < 110 < 700 0.04 0.12 BZT55B51 50 51 52 2.5 0.5 < 0.1 < 10 39 < 125 < 700 0.04 0.12 BZT55B56 54.9 56 57.1 2.5 0.5 < 0.1 < 10 43 < 135 < 1000 0.04 0.12 BZT55B62 60.8 62 63.2 2.5 0.5 < 0.1 < 10 47 < 150 < 1000 0.04 0.12 BZT55B68 66.6 68 69.4 2.5 0.5 < 0.1 < 10 51 < 200 < 1000 0.04 0.12 BZT55B75 73.5 75 76.5 2.5 0.5 < 0.1 < 10 56 < 250 < 1500 0.04 0.12 Notes • Additional measurement of volt age group 9V1 to 75 at 95 % V zmin.≤35 nA at T j 25 °C (1) t ≤10 ms, T/t > 1000 p p 2 DYNAMIC RESISTANCE www.kexin.com.cn Diodes SMD Type Zener Diodes BZT55B2V4 ~ BZT55B75 ■ Typical Characterisitics 15 TKVZ - Temperature Coefficient of VZ (10-4/K) Ptot - Total Power Dissipation (mW) 600 500 400 300 200 100 0 5 IZ = 5 mA 0 - 5 0 200 80 120 160 40 Tamb - Ambient Temperature (°C) Fig. 1 - Total Power Dissipation vs. Ambient Temperature 0 10 20 40 50 Fig. 4 - Temperature Coefficient of VZ vs. Z-Voltage CD - Diode Capacitance (pF) 200 Tj = 25 °C 100 IZ = 5 mA 10 150 VR = 2 V Tj = 25 °C 100 50 0 1 0 5 10 15 25 20 0 5 10 15 20 25 VZ - Z-Voltage (V) VZ - Z-Voltage (V) Fig. 2 - Typical Change of Working Voltage under Operating Conditions at Tamb=25°C Fig. 5 - Diode Capacitance vs. Z-Voltage 1.3 100 VZtn = VZt/VZ (25 °C) 1.2 TKVZ = 10 x 10 -4 /K 8 x 10-4 /K 6 x 10-4 /K 1.1 4 x 10-4 /K 2 x 10-4 /K 0 1.0 - 2 x 10 -4 /K - 4 x 10 -4 /K 0.9 IF - Forward Current (mA) VZtn - Relative Voltage Change 30 VZ - Z-Voltage (V) 1000 VZ - Voltage Change (mV) 10 10 Tj = 25 ° C 1 0.1 0.01 0.001 0.8 - 60 0 60 120 180 240 Tj - Junction Temperature (°C) Fig. 3 - Typical Change of Working Voltage vs. Junction Temperature 0 0.2 0.4 0.6 0.8 1.0 VF - Forward Voltage (V) Fig. 6 - Forward Current vs. Forward Voltage www.kexin.com.cn 3 Diodes SMD Type Zener Diodes BZT55B2V4 ~ BZT55B75 ■ Typical Characterisitics 1000 IZ - Z-Current (mA) 80 rZ - Differential Z-Resistance (Ω) 100 Ptot = 500 mW Tamb = 25 °C 60 40 20 IZ = 1 mA 100 5 mA 10 10 mA Tj = 25 °C 1 0 0 4 6 12 8 20 0 VZ - Z-Voltage (V) 5 10 15 Fig. 9 - Differential Z-Resistance vs. Z-Voltage 50 Ptot = 500 mW Tamb = 25 °C IZ - Z-Current (mA) 30 20 10 0 15 20 25 .35 30 VZ - Z-Voltage (V) Zthp - Thermal Resistance for Pulse Cond. (KW) Fig. 8 - Z-Current vs. Z-Voltage 1000 tp/T = 0.5 100 tp/T = 0.2 Single Pulse 10 T = Tjmax - Tamb tp/T = 0.02 tp/T = 0.05 1 10 -1 iZM = (- V Z + (VZ2 + 4rzj x T/Zthp) 1/2)/(2rzj) 10 0 10 1 tp - Pulse Length (ms) Fig. 10 - Thermal Response 4 RthJA = 300 K/W tp/T = 0.01 tp/T = 0.1 www.kexin.com.cn 25 VZ - Z-Voltage (V) Fig. 7 - Z-Current vs. Z-Voltage 40 20 10 2