GS882Z18/36B(B/D)-xxxV 119-bump and 165-bump BGA Commercial Temp Industrial Temp 9Mb Pipelined and Flow Through Synchronous NBT SRAM Features • NBT (No Bus Turn Around) functionality allows zero wait Read-Write-Read bus utilization; fully pin-compatible with both pipelined and flow through NtRAM™, NoBL™ and ZBT™ SRAMs • 1.8 V or 2.5 V core power supply • 1.8 V or 2.5 V I/O supply • User-configurable Pipeline and Flow Through mode • ZQ mode pin for user-selectable high/low output drive • IEEE 1149.1 JTAG-compatible Boundary Scan • On-chip parity encoding and error detection • LBO pin for Linear or Interleave Burst mode • Pin-compatible with 2M, 4M, and 18M devices • Byte write operation (9-bit Bytes) • 3 chip enable signals for easy depth expansion • ZZ Pin for automatic power-down • JEDEC-standard 119-bump BGA and 165-bump FPBGA packages • RoHS-compliant 119-bump and 165-bump BGA packages available Functional Description The GS882Z18/36B(B/D)-xxxV is a 9Mbit Synchronous Static SRAM. GSI's NBT SRAMs, like ZBT, NtRAM, NoBL or other pipelined read/double late write or flow through read/ single late write SRAMs, allow utilization of all available bus bandwidth by eliminating the need to insert deselect cycles when the device is switched from read to write cycles. 250 MHz–150 MHz 1.8 V or 2.5 V VDD 1.8 V or 2.5 V I/O Because it is a synchronous device, address, data inputs, and read/write control inputs are captured on the rising edge of the input clock. Burst order control (LBO) must be tied to a power rail for proper operation. Asynchronous inputs include the Sleep mode enable (ZZ) and Output Enable. Output Enable can be used to override the synchronous control of the output drivers and turn the RAM's output drivers off at any time. Write cycles are internally self-timed and initiated by the rising edge of the clock input. This feature eliminates complex offchip write pulse generation required by asynchronous SRAMs and simplifies input signal timing. The GGS882Z18/36B(B/D)-xxxV may be configured by the user to operate in Pipeline or Flow Through mode. Operating as a pipelined synchronous device, in addition to the risingedge-triggered registers that capture input signals, the device incorporates a rising edge triggered output register. For read cycles, pipelined SRAM output data is temporarily stored by the edge-triggered output register during the access cycle and then released to the output drivers at the next rising edge of clock. The GS882Z18/36B(B/D)-xxxV is implemented with GSI's high performance CMOS technology and is available in JEDEC-standard 119-bump BGA and 165-bump FPBGA packages. Paramter Synopsis Pipeline 3-1-1-1 Flow Through 2-1-1-1 Rev: 1.04 6/2006 -250 -200 -150 Unit tKQ tCycle 3.0 4.0 3.0 5.0 3.8 6.7 ns ns Curr (x18) Curr (x32/x36) 195 220 165 185 140 160 mA mA tKQ tCycle 5.5 5.5 6.5 6.5 7.5 7.5 ns ns Curr (x18) Curr (x32/x36) 155 175 140 155 128 145 mA mA 1/33 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. NoBL is a trademark of Cypress Semiconductor Corp.. NtRAM is a trademark of Samsung Electronics Co.. ZBT is a trademark of Integrated Device Technology, Inc. © 2004, GSI Technology GS882Z18/36B(B/D)-xxxV GS882Z36BB-xxxV Pad Out—119-Bump BGA—Top View (Package B) Rev: 1.04 6/2006 1 2 3 4 5 6 7 A VDDQ A A NC A A VDDQ B NC E2 A ADV A E3 NC C NC A A VDD A A NC D DQC DQPC VSS ZQ VSS DQPB DQB E DQC DQC VSS E1 VSS DQB DQB F VDDQ DQC VSS G VSS DQB VDDQ G DQC DQC BC A BB DQB DQB H DQC DQC VSS W VSS DQB DQB J VDDQ VDD NC VDD NC VDD VDDQ K DQD DQD VSS CK VSS DQA DQA L DQD DQD BD NC BA DQA DQA M VDDQ DQD VSS CKE VSS DQA VDDQ N DQD DQD VSS A1 VSS DQA DQA P DQD DQPD VSS A0 VSS DQPA DQA R NC A LBO VDD FT A PE T NC NC A A A NC ZZ U VDDQ TMS TDI TCK TDO NC VDDQ 2/33 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. NoBL is a trademark of Cypress Semiconductor Corp.. NtRAM is a trademark of Samsung Electronics Co.. ZBT is a trademark of Integrated Device Technology, Inc. © 2004, GSI Technology GS882Z18/36B(B/D)-xxxV GS882Z18BB-xxxV Pad Out—119-Bump BGA—Top View (Package B) Rev: 1.04 6/2006 1 2 3 4 5 6 7 A VDDQ A A NC A A VDDQ B NC E2 A ADV A E3 NC C NC A A VDD A A NC D DQB NC VSS ZQ VSS DQPA NC E NC DQB VSS E1 VSS NC DQA F VDDQ NC VSS G VSS DQA VDDQ G NC DQB BB A NC NC DQA H DQB NC VSS W VSS DQA NC J VDDQ VDD NC VDD NC VDD VDDQ K NC DQB VSS CK VSS NC DQA L DQB NC NC NC BA DQA NC M VDDQ DQB VSS CKE VSS NC VDDQ N DQB NC VSS A1 VSS DQA NC P NC DQPB VSS A0 VSS NC DQA R NC A LBO VDD FT A PE T NC A A NC A A ZZ U VDDQ TMS TDI TCK TDO NC VDDQ 3/33 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. NoBL is a trademark of Cypress Semiconductor Corp.. NtRAM is a trademark of Samsung Electronics Co.. ZBT is a trademark of Integrated Device Technology, Inc. © 2004, GSI Technology GS882Z18/36B(B/D)-xxxV 165 Bump BGA—x18 Commom I/O—Top View (Package D) 1 2 3 4 5 6 7 8 9 10 11 A NC A E1 BB NC E3 CKE ADV A17 A A18 A B NC A E2 NC BA CK W G NC A NC B C NC NC VDDQ VSS VSS VSS VSS VSS VDDQ NC DQA C D NC DQB VDDQ VDD VSS VSS VSS VDD VDDQ NC DQA D E NC DQB VDDQ VDD VSS VSS VSS VDD VDDQ NC DQA E F NC DQB VDDQ VDD VSS VSS VSS VDD VDDQ NC DQA F G NC DQB VDDQ VDD VSS VSS VSS VDD VDDQ NC DQA G H FT MCH NC VDD VSS VSS VSS VDD NC ZQ ZZ H J DQB NC VDDQ VDD VSS VSS VSS VDD VDDQ DQA NC J K DQB NC VDDQ VDD VSS VSS VSS VDD VDDQ DQA NC K L DQB NC VDDQ VDD VSS VSS VSS VDD VDDQ DQA NC L M DQB NC VDDQ VDD VSS VSS VSS VDD VDDQ DQA NC M N DQB DNU VDDQ VSS NC NC NC VSS VDDQ NC NC N P NC NC A A TDI A1 TDO A A A NC P R LBO NC A A TMS A0 TCK A A A A R 11 x 15 Bump BGA—13 mm x 15 mm Body—1.0 mm Bump Pitch Rev: 1.04 6/2006 4/33 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. NoBL is a trademark of Cypress Semiconductor Corp.. NtRAM is a trademark of Samsung Electronics Co.. ZBT is a trademark of Integrated Device Technology, Inc. © 2004, GSI Technology GS882Z18/36B(B/D)-xxxV 165 Bump BGA—x36 Common I/O—Top View (Package D) 1 2 3 4 5 6 7 8 9 10 11 A NC A E1 BC BB E3 CKE ADV A17 A NC A B NC A E2 BD BA CK W G NC A NC B C DQC NC VDDQ VSS VSS VSS VSS VSS VDDQ NC DQB C D DQC DQC VDDQ VDD VSS VSS VSS VDD VDDQ DQB DQB D E DQC DQC VDDQ VDD VSS VSS VSS VDD VDDQ DQB DQB E F DQC DQC VDDQ VDD VSS VSS VSS VDD VDDQ DQB DQB F G DQC DQC VDDQ VDD VSS VSS VSS VDD VDDQ DQB DQB G H FT MCH NC VDD VSS VSS VSS VDD NC ZQ ZZ H J DQD DQD VDDQ VDD VSS VSS VSS VDD VDDQ DQA DQA J K DQD DQD VDDQ VDD VSS VSS VSS VDD VDDQ DQA DQA K L DQD DQD VDDQ VDD VSS VSS VSS VDD VDDQ DQA DQA L M DQD DQD VDDQ VDD VSS VSS VSS VDD VDDQ DQA DQA M N DQD DNU VDDQ VSS NC NC NC VSS VDDQ NC DQA N P NC NC A A TDI A1 TDO A A A NC P R LBO NC A A TMS A0 TCK A A A A R 11 x 15 Bump BGA—13 mm x 15 mm Body—1.0 mm Bump Pitch Rev: 1.04 6/2006 5/33 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. NoBL is a trademark of Cypress Semiconductor Corp.. NtRAM is a trademark of Samsung Electronics Co.. ZBT is a trademark of Integrated Device Technology, Inc. © 2004, GSI Technology GS882Z18/36B(B/D)-xxxV GS882Z18/36B(B/D)-xxxV BGA Pin Description Symbol Type Description A 0, A 1 I Address field LSBs and Address Counter Preset Inputs A I Address Inputs DQA DQB DQC DQD I/O Data Input and Output pins BA , BB , BC , BD I Byte Write Enable for DQA, DQB, DQC, DQD I/Os; active low NC — No Connect CK I Clock Input Signal; active high CKE I Clock Enable; active low W I Write Enable; active low E1 I Chip Enable; active low E3 I Chip Enable; active low E2 I Chip Enable; active high G I Output Enable; active low ADV I Burst address counter advance enable; active high ZZ I Sleep mode control; active high FT I Flow Through or Pipeline mode; active low LBO I Linear Burst Order mode; active low PE I 9th Bit Enable; active low (119-bump BGA only) ZQ I FLXDrive Output Impedance Control (Low = Low Impedance [High Drive], High = High Impedance [Low Drive]) TMS I Scan Test Mode Select TDI I Scan Test Data In TDO O Scan Test Data Out TCK I Scan Test Clock MCH — Must Connect High DNU — Do Not Use VDD I Core power supply VSS I I/O and Core Ground VDDQ I Output driver power supply Rev: 1.04 6/2006 6/33 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. NoBL is a trademark of Cypress Semiconductor Corp.. NtRAM is a trademark of Samsung Electronics Co.. ZBT is a trademark of Integrated Device Technology, Inc. © 2004, GSI Technology GS882Z18/36B(B/D)-xxxV Functional Details Clocking Deassertion of the Clock Enable (CKE) input blocks the Clock input from reaching the RAM's internal circuits. It may be used to suspend RAM operations. Failure to observe Clock Enable set-up or hold requirements will result in erratic operation. Pipeline Mode Read and Write Operations All inputs (with the exception of Output Enable, Linear Burst Order and Sleep) are synchronized to rising clock edges. Single cycle read and write operations must be initiated with the Advance/Load pin (ADV) held low, in order to load the new address. Device activation is accomplished by asserting all three of the Chip Enable inputs (E1, E2, and E3). Deassertion of any one of the Enable inputs will deactivate the device. Function W BA BB BC BD Read H X X X X Write Byte “a” L L H H H Write Byte “b” L H L H H Write Byte “c” L H H L H Write Byte “d” L H H H L Write all Bytes L L L L L Write Abort/NOP L H H H H Read operation is initiated when the following conditions are satisfied at the rising edge of clock: CKE is asserted low, all three chip enables (E1, E2, and E3) are active, the write enable input signals W is deasserted high, and ADV is asserted low. The address presented to the address inputs is latched into the address register and presented to the memory core and control logic. The control logic determines that a read access is in progress and allows the requested data to propagate to the input of the output register. At the next rising edge of clock the read data is allowed to propagate through the output register and onto the output pins. Write operation occurs when the RAM is selected, CKE is active, and the Write input is sampled low at the rising edge of clock. The Byte Write Enable inputs (BA, BB, BC, and BD) determine which bytes will be written. All or none may be activated. A write cycle with no Byte Write inputs active is a no-op cycle. The pipelined NBT SRAM provides double late write functionality, matching the write command versus data pipeline length (2 cycles) to the read command versus data pipeline length (2 cycles). At the first rising edge of clock, Enable, Write, Byte Write(s), and Address are registered. The Data In associated with that address is required at the third rising edge of clock. Flow Through Mode Read and Write Operations Operation of the RAM in Flow Through mode is very similar to operations in Pipeline mode. Activation of a Read Cycle and the use of the Burst Address Counter is identical. In Flow Through mode the device may begin driving out new data immediately after new address are clocked into the RAM, rather than holding new data until the following (second) clock edge. Therefore, in Flow Through mode the read pipeline is one cycle shorter than in Pipeline mode. Write operations are initiated in the same way, but differ in that the write pipeline is one cycle shorter as well, preserving the ability to turn the bus from reads to writes without inserting any dead cycles. While the pipelined NBT RAMs implement a double late write protocol in Flow Through mode a single late write protocol mode is observed. Therefore, in Flow Through mode, address and control are registered on the first rising edge of clock and data in is required at the data input pins at the second rising edge of clock. Rev: 1.04 6/2006 7/33 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. NoBL is a trademark of Cypress Semiconductor Corp.. NtRAM is a trademark of Samsung Electronics Co.. ZBT is a trademark of Integrated Device Technology, Inc. © 2004, GSI Technology GS882Z18/36B(B/D)-xxxV Synchronous Truth Table Operation Type Address CK CKE ADV W Bx E1 E2 E3 G ZZ DQ Notes Read Cycle, Begin Burst R External L-H L L H X L H L L L Q Read Cycle, Continue Burst B Next L-H L H X X X X X L L Q 1,10 NOP/Read, Begin Burst R External L-H L L H X L H L H L High-Z 2 Dummy Read, Continue Burst B Next L-H L H X X X X X H L High-Z 1,2,10 Write Cycle, Begin Burst W External L-H L L L L L H L X L D 3 Write Cycle, Continue Burst B Next L-H L H X L X X X X L D 1,3,10 Write Abort, Continue Burst B Next L-H L H X H X X X X L High-Z 1,2,3,10 Deselect Cycle, Power Down D None L-H L L X X H X X X L High-Z Deselect Cycle, Power Down D None L-H L L X X X X H X L High-Z Deselect Cycle, Power Down D None L-H L L X X X L X X L High-Z Deselect Cycle D None L-H L L L H L H L X L High-Z Deselect Cycle, Continue D None L-H L H X X X X X X L High-Z None X X X X X X X X X H High-Z Current L-H H X X X X X X X L - Sleep Mode Clock Edge Ignore, Stall 1 1 4 Notes: 1. Continue Burst cycles, whether read or write, use the same control inputs. A Deselect continue cycle can only be entered into if a Deselect cycle is executed first. 2. Dummy Read and Write abort can be considered NOPs because the SRAM performs no operation. A Write abort occurs when the W pin is sampled low but no Byte Write pins are active so no write operation is performed. 3. G can be wired low to minimize the number of control signals provided to the SRAM. Output drivers will automatically turn off during write cycles. 4. If CKE High occurs during a pipelined read cycle, the DQ bus will remain active (Low Z). If CKE High occurs during a write cycle, the bus will remain in High Z. 5. X = Don’t Care; H = Logic High; L = Logic Low; Bx = High = All Byte Write signals are high; Bx = Low = One or more Byte/Write signals are Low 6. All inputs, except G and ZZ must meet setup and hold times of rising clock edge. 7. Wait states can be inserted by setting CKE high. 8. This device contains circuitry that ensures all outputs are in High Z during power-up. 9. A 2-bit burst counter is incorporated. 10. The address counter is incriminated for all Burst continue cycles. Rev: 1.04 6/2006 8/33 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. NoBL is a trademark of Cypress Semiconductor Corp.. NtRAM is a trademark of Samsung Electronics Co.. ZBT is a trademark of Integrated Device Technology, Inc. © 2004, GSI Technology GS882Z18/36B(B/D)-xxxV Pipelined and Flow Through Read Write Control State Diagram D B Deselect W R D R D W New Read New Write R W B B R B W R Burst Read W Burst Write D Key B D Notes Input Command Code 1. The Hold command (CKE Low) is not shown because it prevents any state change. ƒ Transition Current State (n) 2. W, R, B, and D represent input command codes as indicated in the Synchronous Truth Table. Next State (n+1) n n+1 n+2 n+3 Clock (CK) Command ƒ Current State ƒ ƒ ƒ Next State Current State and Next State Definition for Pipelined and Flow through Read/Write Control State Diagram Rev: 1.04 6/2006 9/33 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. NoBL is a trademark of Cypress Semiconductor Corp.. NtRAM is a trademark of Samsung Electronics Co.. ZBT is a trademark of Integrated Device Technology, Inc. © 2004, GSI Technology GS882Z18/36B(B/D)-xxxV Pipeline Mode Data I/O State Diagram Intermediate B W R B Intermediate R High Z (Data In) D Data Out (Q Valid) W D Intermediate Intermediate W Intermediate R High Z B D Intermediate Key Notes Input Command Code 1. The Hold command (CKE Low) is not shown because it prevents any state change. ƒ Transition Current State (n) Transition Intermediate State (N+1) n Next State (n+2) n+1 2. W, R, B, and D represent input command codes as indicated in the Truth Tables. n+2 n+3 Clock (CK) Command ƒ ƒ ƒ Current State Intermediate State Next State ƒ Current State and Next State Definition for Pipeline Mode Data I/O State Diagram Rev: 1.04 6/2006 10/33 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. NoBL is a trademark of Cypress Semiconductor Corp.. NtRAM is a trademark of Samsung Electronics Co.. ZBT is a trademark of Integrated Device Technology, Inc. © 2004, GSI Technology GS882Z18/36B(B/D)-xxxV Flow Through Mode Data I/O State Diagram B W R B R High Z (Data In) Data Out (Q Valid) W D D W R High Z B D Key Notes Input Command Code 1. The Hold command (CKE Low) is not shown because it prevents any state change. ƒ Transition Current State (n) 2. W, R, B, and D represent input command codes as indicated in the Truth Tables. Next State (n+1) n n+1 n+2 n+3 Clock (CK) Command ƒ Current State ƒ ƒ ƒ Next State Current State and Next State Definition for: Pipeline and Flow Through Read Write Control State Diagram Rev: 1.04 6/2006 11/33 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. NoBL is a trademark of Cypress Semiconductor Corp.. NtRAM is a trademark of Samsung Electronics Co.. ZBT is a trademark of Integrated Device Technology, Inc. © 2004, GSI Technology GS882Z18/36B(B/D)-xxxV Burst Cycles Although NBT RAMs are designed to sustain 100% bus bandwidth by eliminating turnaround cycle when there is transition from read to write, multiple back-to-back reads or writes may also be performed. NBT SRAMs provide an on-chip burst address generator that can be utilized, if desired, to further simplify burst read or write implementations. The ADV control pin, when driven high, commands the SRAM to advance the internal address counter and use the counter generated address to read or write the SRAM. The starting address for the first cycle in a burst cycle series is loaded into the SRAM by driving the ADV pin low, into Load mode. Burst Order The burst address counter wraps around to its initial state after four addresses (the loaded address and three more) have been accessed. The burst sequence is determined by the state of the Linear Burst Order pin (LBO). When this pin is Low, a linear burst sequence is selected. When the RAM is installed with the LBO pin tied high, Interleaved burst sequence is selected. See the tables below for details. FLXDrive™ The ZQ pin allows selection between NBT RAM nominal drive strength (ZQ low) for multi-drop bus applications and low drive strength (ZQ floating or high) point-to-point applications. See the Output Driver Characteristics chart for details. Mode Pin Functions Mode Name Pin Name Burst Order Control LBO Output Register Control FT Power Down Control ZZ Single/Dual Cycle Deselect Control SCD FLXDrive Output Impedance Control ZQ State Function L Linear Burst H Interleaved Burst L Flow Through H or NC Pipeline L or NC Active H Standby, IDD = ISB L Dual Cycle Deselect H or NC Single Cycle Deselect L High Drive (Low Impedance) H or NC Low Drive (High Impedance) Note: There is a pull-down device on the ZZ pin, so this input pin can be unconnected and the chip will operate in the default states as specified in the above table. There is a pull-up device on the FT pin and a pull-down device on the ZZ pin, so this input pin can be unconnected and the chip will operate in the default states as specified in the above table. There are pull-up devices on the ZQ and SCD pins and a pull-down device on the ZZ pin, so those input pins can be unconnected and the chip will operate in the default states as specified in the above tables. Rev: 1.04 6/2006 12/33 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. NoBL is a trademark of Cypress Semiconductor Corp.. NtRAM is a trademark of Samsung Electronics Co.. ZBT is a trademark of Integrated Device Technology, Inc. © 2004, GSI Technology GS882Z18/36B(B/D)-xxxV Burst Counter Sequences Linear Burst Sequence Interleaved Burst Sequence A[1:0] A[1:0] A[1:0] A[1:0] A[1:0] A[1:0] A[1:0] A[1:0] 1st address 00 01 10 11 1st address 00 01 10 11 2nd address 01 10 11 00 2nd address 01 00 11 10 3rd address 10 11 00 01 3rd address 10 11 00 01 4th address 11 00 01 10 4th address 11 10 01 00 Note: The burst counter wraps to initial state on the 5th clock. Note: The burst counter wraps to initial state on the 5th clock. BPR 1999.05.18 Sleep Mode During normal operation, ZZ must be pulled low, either by the user or by its internal pull down resistor. When ZZ is pulled high, the SRAM will enter a Power Sleep mode after 2 cycles. At this time, internal state of the SRAM is preserved. When ZZ returns to low, the SRAM operates normally after ZZ recovery time. Sleep mode is a low current, power-down mode in which the device is deselected and current is reduced to ISB2. The duration of Sleep mode is dictated by the length of time the ZZ is in a High state. After entering Sleep mode, all inputs except ZZ become disabled and all outputs go to High-Z The ZZ pin is an asynchronous, active high input that causes the device to enter Sleep mode. When the ZZ pin is driven high, ISB2 is guaranteed after the time tZZS is met. Because ZZ is an asynchronous input, pending operations or operations in progress may not be properly completed if ZZ is asserted. Therefore, Sleep mode must not be initiated until valid pending operations are completed. Similarly, when exiting Sleep mode during tZZR, only a Deselect or Read commands may be applied while the SRAM is recovering from Sleep mode. Sleep Mode Timing Diagram tKH tKC tKL CK tZZR tZZS tZZH ZZ Designing for Compatibility The GSI NBT SRAMs offer users a configurable selection between Flow Through mode and Pipeline mode via the FT signal found on Bump 5R. Not all vendors offer this option, however most mark Bump 5R as VDD or VDDQ on pipelined parts and VSS on flow through parts. GSI NBT SRAMs are fully compatible with these sockets. Rev: 1.04 6/2006 13/33 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. NoBL is a trademark of Cypress Semiconductor Corp.. NtRAM is a trademark of Samsung Electronics Co.. ZBT is a trademark of Integrated Device Technology, Inc. © 2004, GSI Technology GS882Z18/36B(B/D)-xxxV Absolute Maximum Ratings (All voltages reference to VSS) Symbol Description Value Unit VDD Voltage on VDD Pins –0.5 to 4.6 V VDDQ Voltage on VDDQ Pins –0.5 to VDD V VI/O Voltage on I/O Pins –0.5 to VDDQ +0.5 (≤ 4.6 V max.) V VIN Voltage on Other Input Pins –0.5 to VDD +0.5 (≤ 4.6 V max.) V IIN Input Current on Any Pin +/–20 mA IOUT Output Current on Any I/O Pin +/–20 mA PD Package Power Dissipation 1.5 W TSTG Storage Temperature –55 to 125 o TBIAS Temperature Under Bias –55 to 125 o C C Note: Permanent damage to the device may occur if the Absolute Maximum Ratings are exceeded. Operation should be restricted to Recommended Operating Conditions. Exposure to conditions exceeding the Absolute Maximum Ratings, for an extended period of time, may affect reliability of this component. Power Supply Voltage Ranges (1.8 V/2.5 V Version) Parameter Symbol Min. Typ. Max. Unit 1.8 V Supply Voltage VDD1 1.7 1.8 2.0 V 2.5 V Supply Voltage VDD2 2.3 2.5 2.7 V 1.8 V VDDQ I/O Supply Voltage VDDQ1 1.7 1.8 VDD V 2.5 V VDDQ I/O Supply Voltage VDDQ2 2.3 2.5 VDD V Notes Notes: 1. The part numbers of Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifications quoted are evaluated for worst case in the temperature range marked on the device. 2. Input Under/overshoot voltage must be –2 V > Vi < VDDn+2 V not to exceed 4.6 V maximum, with a pulse width not to exceed 20% tKC. Rev: 1.04 6/2006 14/33 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. NoBL is a trademark of Cypress Semiconductor Corp.. NtRAM is a trademark of Samsung Electronics Co.. ZBT is a trademark of Integrated Device Technology, Inc. © 2004, GSI Technology GS882Z18/36B(B/D)-xxxV VDDQ2 & VDDQ1 Range Logic Levels Parameter Symbol Min. Typ. Max. Unit Notes VDD Input High Voltage VIH 0.6*VDD — VDD + 0.3 V 1 VDD Input Low Voltage VIL –0.3 — 0.3*VDD V 1 Notes: 1. The part numbers of Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifications quoted are evaluated for worst case in the temperature range marked on the device. 2. Input Under/overshoot voltage must be –2 V > Vi < VDDn+2 V not to exceed 4.6 V maximum, with a pulse width not to exceed 20% tKC. Recommended Operating Temperatures Parameter Symbol Min. Typ. Max. Unit Notes Ambient Temperature (Commercial Range Versions) TA 0 25 70 °C 2 Ambient Temperature (Industrial Range Versions) TA –40 25 85 °C 2 Notes: 1. The part numbers of Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifications quoted are evaluated for worst case in the temperature range marked on the device. 2. Input Under/overshoot voltage must be –2 V > Vi < VDDn+2 V not to exceed 4.6 V maximum, with a pulse width not to exceed 20% tKC. Undershoot Measurement and Timing Overshoot Measurement and Timing VIH 20% tKC VDD + 2.0 V VSS 50% 50% VDD VSS – 2.0 V 20% tKC VIL Capacitance (TA = 25oC, f = 1 MHZ, VDD = 2.5 V) Parameter Symbol Test conditions Typ. Max. Unit Input Capacitance CIN VIN = 0 V 4 5 pF Input/Output Capacitance CI/O VOUT = 0 V 6 7 pF Note: These parameters are sample tested. Rev: 1.04 6/2006 15/33 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. NoBL is a trademark of Cypress Semiconductor Corp.. NtRAM is a trademark of Samsung Electronics Co.. ZBT is a trademark of Integrated Device Technology, Inc. © 2004, GSI Technology GS882Z18/36B(B/D)-xxxV AC Test Conditions Parameter Conditions Input high level VDD – 0.2 V Input low level 0.2 V Input slew rate 1 V/ns Input reference level VDD/2 Output reference level VDDQ/2 Output load Fig. 1 Figure 1 Output Load 1 DQ 30pF* 50Ω Notes: 1. Include scope and jig capacitance. 2. Test conditions as specified with output loading as shown in Fig. 1 unless otherwise noted. 3. Device is deselected as defined by the Truth Table. VDDQ/2 * Distributed Test Jig Capacitance DC Electrical Characteristics Parameter Symbol Test Conditions Min Max Input Leakage Current (except mode pins) IIL VIN = 0 to VDD –1 uA 1 uA FT, ZZ Input Current IIN VDD ≥ VIN ≥ 0 V –100 uA 100 uA Output Leakage Current IOL Output Disable, VOUT = 0 to VDD –1 uA 1 uA DC Output Characteristics (1.8 V/2.5 V Version) Parameter Symbol Test Conditions Min Max 1.8 V Output High Voltage VOH1 IOH = –4 mA, VDDQ = 1.6 V VDDQ – 0.4 V — 2.5 V Output High Voltage VOH2 IOH = –8 mA, VDDQ = 2.375 V 1.7 V — 1.8 V Output Low Voltage VOL1 IOL = 4 mA — 0.4 V 2.5 V Output Low Voltage VOL2 IOL = 8 mA — 0.4 V Rev: 1.04 6/2006 16/33 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. NoBL is a trademark of Cypress Semiconductor Corp.. NtRAM is a trademark of Samsung Electronics Co.. ZBT is a trademark of Integrated Device Technology, Inc. © 2004, GSI Technology GS882Z18/36B(B/D)-xxxV Operating Currents -250 Parameter Test Conditions Mode Symbol Operating Current ZZ ≥ VDD – 0.2 V Deselect Current Device Deselected; All other inputs ≥ VIH or ≤ VIL — — 0 –40 to 70°C to 85°C –40 to 85°C Unit IDD IDDQ 200 20 220 20 170 15 190 15 140 20 160 20 mA Flow Through IDD IDDQ 160 15 180 15 140 15 160 15 130 15 150 15 mA Pipeline IDD IDDQ 185 10 205 10 155 10 175 10 130 10 150 10 mA Flow Through IDD IDDQ 145 10 165 10 130 10 150 10 120 8 140 8 mA Pipeline ISB 40 50 40 50 40 50 mA Flow Through ISB 40 50 40 50 40 50 mA Pipeline IDD 85 90 75 80 60 65 mA Flow Through IDD 60 65 50 55 50 55 mA (x18) Standby Current 0 to 70°C -150 0 to 70°C Pipeline (x32/x36) Device Selected; All other inputs ≥VIH or ≤ VIL Output open -200 –40 to 85°C Notes: 1. IDD and IDDQ apply to any combination of VDD and VDDQ operation. 2. All parameters listed are worst case scenario. Rev: 1.04 6/2006 17/33 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. NoBL is a trademark of Cypress Semiconductor Corp.. NtRAM is a trademark of Samsung Electronics Co.. ZBT is a trademark of Integrated Device Technology, Inc. © 2004, GSI Technology GS882Z18/36B(B/D)-xxxV AC Electrical Characteristics Parameter Pipeline Flow Through Symbol -250 Min -200 Max Min -150 Max Min Max Unit Clock Cycle Time tKC 4.0 — 5.0 — 6.7 — ns Clock to Output Valid tKQ — 3.0 — 3.0 — 3.8 ns Clock to Output Invalid tKQX 1.5 — 1.5 — 1.5 — ns 1 Clock to Output in Low-Z tLZ 1.5 — 1.5 — 1.5 — ns Setup time tS 1.2 — 1.4 — 1.5 — ns Hold time tH 0.2 — 0.4 — 0.5 — ns Clock Cycle Time tKC 5.5 — 6.5 — 7.5 — ns Clock to Output Valid tKQ — 5.5 — 6.5 — 7.5 ns Clock to Output Invalid tKQX 2.0 — 2.0 — 2.0 — ns Clock to Output in Low-Z tLZ1 2.0 — 2.0 — 2.0 — ns Setup time tS 1.5 — 1.5 — 1.5 — ns Hold time tH 0.5 — 0.5 — 0.5 — ns Clock HIGH Time tKH 1.3 — 1.3 — 1.5 — ns Clock LOW Time tKL 1.7 — 1.7 — 1.7 — ns Clock to Output in High-Z tHZ1 1.5 2.5 1.5 3.0 1.5 3.0 ns G to Output Valid tOE — 2.5 — 3.0 — 3.8 ns G to output in Low-Z tOLZ1 0 — 0 — 0 — ns G to output in High-Z tOHZ1 — 2.5 — 3.0 — 3.8 ns ZZ setup time tZZS2 5 — 5 — 5 — ns ZZ hold time tZZH2 1 — 1 — 1 — ns ZZ recovery tZZR 20 — 20 — 20 — ns Notes: 1. These parameters are sampled and are not 100% tested. 2. ZZ is an asynchronous signal. However, in order to be recognized on any given clock cycle, ZZ must meet the specified setup and hold times as specified above. Rev: 1.04 6/2006 18/33 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. NoBL is a trademark of Cypress Semiconductor Corp.. NtRAM is a trademark of Samsung Electronics Co.. ZBT is a trademark of Integrated Device Technology, Inc. © 2004, GSI Technology GS882Z18/36B(B/D)-xxxV Pipeline Mode Timing (NBT) Write A Write B Write B+1 Read C Cont Read D Write E Read F Write G Deselect tKL tKH tKC CK tH tS CKE tH tS E* tH tS ADV tH tS W tH tS Bn tH A0–An tS A B C D tH tS DQa–DQd D(A) E F tLZ tKQ D(B) D(B+1) G tHZ tKQX Q(C) Q(D) D(E) Q(F) D(G) tOLZ tOHZ tOE G *Note: E = High(False) if E1 = 1 or E2 = 0 or E3 = 1 Rev: 1.04 6/2006 19/33 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. NoBL is a trademark of Cypress Semiconductor Corp.. NtRAM is a trademark of Samsung Electronics Co.. ZBT is a trademark of Integrated Device Technology, Inc. © 2004, GSI Technology GS882Z18/36B(B/D)-xxxV Flow Through Mode Timing (NBT) Write A Write B Write B+1 Read C Cont Read D Write E Read F Write G tKL tKH tKC CK tH tS CKE tH tS E* tH tS ADV tH tS W tH tS Bn tH A0–An tS A B C tH tS DQ D(A) D E tKQ tLZ D(B) D(B+1) F tKQX tHZ Q(C) Q(D) G tKQ tLZ D(E) tKQX Q(F) D(G) tOLZ tOE tOHZ G *Note: E = High(False) if E1 = 1 or E2 = 0 or E3 = 1 Rev: 1.04 6/2006 20/33 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. NoBL is a trademark of Cypress Semiconductor Corp.. NtRAM is a trademark of Samsung Electronics Co.. ZBT is a trademark of Integrated Device Technology, Inc. © 2004, GSI Technology GS882Z18/36B(B/D)-xxxV JTAG Port Operation Overview The JTAG Port on this RAM operates in a manner that is compliant with IEEE Standard 1149.1-1990, a serial boundary scan interface standard (commonly referred to as JTAG). The JTAG Port input interface levels scale with VDD. The JTAG output drivers are powered by VDDQ. Disabling the JTAG Port It is possible to use this device without utilizing the JTAG port. The port is reset at power-up and will remain inactive unless clocked. TCK, TDI, and TMS are designed with internal pull-up circuits.To assure normal operation of the RAM with the JTAG Port unused, TCK, TDI, and TMS may be left floating or tied to either VDD or VSS. TDO should be left unconnected. JTAG Pin Descriptions Pin Pin Name I/O Description TCK Test Clock In Clocks all TAP events. All inputs are captured on the rising edge of TCK and all outputs propagate from the falling edge of TCK. TMS Test Mode Select In The TMS input is sampled on the rising edge of TCK. This is the command input for the TAP controller state machine. An undriven TMS input will produce the same result as a logic one input level. In The TDI input is sampled on the rising edge of TCK. This is the input side of the serial registers placed between TDI and TDO. The register placed between TDI and TDO is determined by the state of the TAP Controller state machine and the instruction that is currently loaded in the TAP Instruction Register (refer to the TAP Controller State Diagram). An undriven TDI pin will produce the same result as a logic one input level. TDI Test Data In TDO Test Data Out Output that is active depending on the state of the TAP state machine. Output changes in Out response to the falling edge of TCK. This is the output side of the serial registers placed between TDI and TDO. Note: This device does not have a TRST (TAP Reset) pin. TRST is optional in IEEE 1149.1. The Test-Logic-Reset state is entered while TMS is held high for five rising edges of TCK. The TAP Controller is also reset automaticly at power-up. JTAG Port Registers Overview The various JTAG registers, refered to as Test Access Port orTAP Registers, are selected (one at a time) via the sequences of 1s and 0s applied to TMS as TCK is strobed. Each of the TAP Registers is a serial shift register that captures serial input data on the rising edge of TCK and pushes serial data out on the next falling edge of TCK. When a register is selected, it is placed between the TDI and TDO pins. Instruction Register The Instruction Register holds the instructions that are executed by the TAP controller when it is moved into the Run, Test/Idle, or the various data register states. Instructions are 3 bits long. The Instruction Register can be loaded when it is placed between the TDI and TDO pins. The Instruction Register is automatically preloaded with the IDCODE instruction at power-up or whenever the controller is placed in Test-Logic-Reset state. Bypass Register The Bypass Register is a single bit register that can be placed between TDI and TDO. It allows serial test data to be passed through the RAM’s JTAG Port to another device in the scan chain with as little delay as possible. Rev: 1.04 6/2006 21/33 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. NoBL is a trademark of Cypress Semiconductor Corp.. NtRAM is a trademark of Samsung Electronics Co.. ZBT is a trademark of Integrated Device Technology, Inc. © 2004, GSI Technology GS882Z18/36B(B/D)-xxxV Boundary Scan Register The Boundary Scan Register is a collection of flip flops that can be preset by the logic level found on the RAM’s input or I/O pins. The flip flops are then daisy chained together so the levels found can be shifted serially out of the JTAG Port’s TDO pin. The Boundary Scan Register also includes a number of place holder flip flops (always set to a logic 1). The relationship between the device pins and the bits in the Boundary Scan Register is described in the Scan Order Table following. The Boundary Scan Register, under the control of the TAP Controller, is loaded with the contents of the RAMs I/O ring when the controller is in Capture-DR state and then is placed between the TDI and TDO pins when the controller is moved to Shift-DR state. SAMPLE-Z, SAMPLE/PRELOAD and EXTEST instructions can be used to activate the Boundary Scan Register. JTAG TAP Block Diagram · · · · · · Boundary Scan Register · · 0 Bypass Register 0 108 · 1 · · 2 1 0 Instruction Register TDI TDO ID Code Register 31 30 29 · · · · 2 1 0 Control Signals TMS TCK Test Access Port (TAP) Controller Identification (ID) Register The ID Register is a 32-bit register that is loaded with a device and vendor specific 32-bit code when the controller is put in Capture-DR state with the IDCODE command loaded in the Instruction Register. The code is loaded from a 32-bit on-chip ROM. It describes various attributes of the RAM as indicated below. The register is then placed between the TDI and TDO pins when the controller is moved into Shift-DR state. Bit 0 in the register is the LSB and the first to reach TDO when shifting begins. Rev: 1.04 6/2006 22/33 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. NoBL is a trademark of Cypress Semiconductor Corp.. NtRAM is a trademark of Samsung Electronics Co.. ZBT is a trademark of Integrated Device Technology, Inc. © 2004, GSI Technology GS882Z18/36B(B/D)-xxxV GSI Technology JEDEC Vendor ID Code Not Used Bit # Presence Register ID Register Contents 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 16 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0 X 1 X X X X X X X X X X X X X X X X X X X 0 0 0 1 1 0 1 1 0 0 1 Tap Controller Instruction Set Overview There are two classes of instructions defined in the Standard 1149.1-1990; the standard (Public) instructions, and device specific (Private) instructions. Some Public instructions are mandatory for 1149.1 compliance. Optional Public instructions must be implemented in prescribed ways. The TAP on this device may be used to monitor all input and I/O pads, and can be used to load address, data or control signals into the RAM or to preload the I/O buffers. When the TAP controller is placed in Capture-IR state the two least significant bits of the instruction register are loaded with 01. When the controller is moved to the Shift-IR state the Instruction Register is placed between TDI and TDO. In this state the desired instruction is serially loaded through the TDI input (while the previous contents are shifted out at TDO). For all instructions, the TAP executes newly loaded instructions only when the controller is moved to Update-IR state. The TAP instruction set for this device is listed in the following table. Rev: 1.04 6/2006 23/33 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. NoBL is a trademark of Cypress Semiconductor Corp.. NtRAM is a trademark of Samsung Electronics Co.. ZBT is a trademark of Integrated Device Technology, Inc. © 2004, GSI Technology GS882Z18/36B(B/D)-xxxV JTAG Tap Controller State Diagram 1 0 Test Logic Reset 0 Run Test Idle 1 Select DR 1 Select IR 0 0 1 1 Capture DR Capture IR 0 0 Shift DR 1 1 Shift IR 0 1 1 Exit1 DR 0 Exit1 IR 0 0 Pause DR 1 Exit2 DR 1 Update DR 1 1 0 0 Pause IR 1 Exit2 IR 0 1 0 0 Update IR 1 0 Instruction Descriptions BYPASS When the BYPASS instruction is loaded in the Instruction Register the Bypass Register is placed between TDI and TDO. This occurs when the TAP controller is moved to the Shift-DR state. This allows the board level scan path to be shortened to facilitate testing of other devices in the scan path. SAMPLE/PRELOAD SAMPLE/PRELOAD is a Standard 1149.1 mandatory public instruction. When the SAMPLE / PRELOAD instruction is loaded in the Instruction Register, moving the TAP controller into the Capture-DR state loads the data in the RAMs input and I/O buffers into the Boundary Scan Register. Boundary Scan Register locations are not associated with an input or I/O pin, and are loaded with the default state identified in the Boundary Scan Chain table at the end of this section of the datasheet. Because the RAM clock is independent from the TAP Clock (TCK) it is possible for the TAP to attempt to capture the I/O ring contents while the input buffers are in transition (i.e. in a metastable state). Although allowing the TAP to sample metastable inputs will not harm the device, repeatable results cannot be expected. RAM input signals must be stabilized for long enough to meet the TAPs input data capture set-up plus hold time (tTS plus tTH). The RAMs clock inputs need not be paused for any other TAP operation except capturing the I/O ring contents into the Boundary Scan Register. Moving the controller to Shift-DR state then places the boundary scan register between the TDI and TDO pins. EXTEST EXTEST is an IEEE 1149.1 mandatory public instruction. It is to be executed whenever the instruction register is loaded with all logic 0s. The EXTEST command does not block or override the RAM’s input pins; therefore, the RAM’s internal state is still determined by its input pins. Rev: 1.04 6/2006 24/33 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. NoBL is a trademark of Cypress Semiconductor Corp.. NtRAM is a trademark of Samsung Electronics Co.. ZBT is a trademark of Integrated Device Technology, Inc. © 2004, GSI Technology GS882Z18/36B(B/D)-xxxV Typically, the Boundary Scan Register is loaded with the desired pattern of data with the SAMPLE/PRELOAD command. Then the EXTEST command is used to output the Boundary Scan Register’s contents, in parallel, on the RAM’s data output drivers on the falling edge of TCK when the controller is in the Update-IR state. Alternately, the Boundary Scan Register may be loaded in parallel using the EXTEST command. When the EXTEST instruction is selected, the sate of all the RAM’s input and I/O pins, as well as the default values at Scan Register locations not associated with a pin, are transferred in parallel into the Boundary Scan Register on the rising edge of TCK in the Capture-DR state, the RAM’s output pins drive out the value of the Boundary Scan Register location with which each output pin is associated. IDCODE The IDCODE instruction causes the ID ROM to be loaded into the ID register when the controller is in Capture-DR mode and places the ID register between the TDI and TDO pins in Shift-DR mode. The IDCODE instruction is the default instruction loaded in at power up and any time the controller is placed in the Test-Logic-Reset state. SAMPLE-Z If the SAMPLE-Z instruction is loaded in the instruction register, all RAM outputs are forced to an inactive drive state (highZ) and the Boundary Scan Register is connected between TDI and TDO when the TAP controller is moved to the Shift-DR state. RFU These instructions are Reserved for Future Use. In this device they replicate the BYPASS instruction. JTAG TAP Instruction Set Summary Instruction Code Description EXTEST 000 Places the Boundary Scan Register between TDI and TDO. 1 IDCODE 001 Preloads ID Register and places it between TDI and TDO. 1, 2 SAMPLE-Z 010 Captures I/O ring contents. Places the Boundary Scan Register between TDI and TDO. Forces all RAM output drivers to High-Z. 1 RFU 011 Do not use this instruction; Reserved for Future Use. Replicates BYPASS instruction. Places Bypass Register between TDI and TDO. 1 SAMPLE/ PRELOAD 100 Captures I/O ring contents. Places the Boundary Scan Register between TDI and TDO. 1 GSI 101 GSI private instruction. 1 RFU 110 Do not use this instruction; Reserved for Future Use. Replicates BYPASS instruction. Places Bypass Register between TDI and TDO. 1 BYPASS 111 Places Bypass Register between TDI and TDO. Notes: 1. Instruction codes expressed in binary, MSB on left, LSB on right. 2. Default instruction automatically loaded at power-up and in test-logic-reset state. Rev: 1.04 6/2006 25/33 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. NoBL is a trademark of Cypress Semiconductor Corp.. NtRAM is a trademark of Samsung Electronics Co.. ZBT is a trademark of Integrated Device Technology, Inc. Notes 1 © 2004, GSI Technology GS882Z18/36B(B/D)-xxxV JTAG Port Recommended Operating Conditions and DC Characteristics (1.8/2.5 V Version) Parameter Symbol Min. Max. Unit Notes 1.8 V Test Port Input Low Voltage VILJ1 –0.3 0.3 * VDD1 V 1 2.5 V Test Port Input Low Voltage VILJ2 –0.3 0.3 * VDD2 V 1 1.8 V Test Port Input High Voltage VIHJ1 0.6 * VDD1 VDD1 +0.3 V 1 2.5 V Test Port Input High Voltage VIHJ2 0.6 * VDD2 VDD2 +0.3 V 1 TMS, TCK and TDI Input Leakage Current IINHJ –300 1 uA 2 TMS, TCK and TDI Input Leakage Current IINLJ –1 100 uA 3 TDO Output Leakage Current IOLJ –1 1 uA 4 Test Port Output High Voltage VOHJ 1.7 — V 5, 6 Test Port Output Low Voltage VOLJ — 0.4 V 5, 7 Test Port Output CMOS High VOHJC VDDQ – 100 mV — V 5, 8 Test Port Output CMOS Low VOLJC — 100 mV V 5, 9 Notes: 1. Input Under/overshoot voltage must be –2 V < Vi < VDDn +2 V not to exceed 4.6 V maximum, with a pulse width not to exceed 20% tTKC. 2. VILJ ≤ VIN ≤ VDDn 3. 0 V ≤ VIN ≤ VILJn 4. Output Disable, VOUT = 0 to VDDn 5. The TDO output driver is served by the VDDQ supply. 6. IOHJ = –4 mA 7. IOLJ = + 4 mA 8. IOHJC = –100 uA 9. IOLJC = +100 uA JTAG Port AC Test Conditions Parameter Conditions Input high level VDD – 0.2 V Input low level 0.2 V Input slew rate 1 V/ns Input reference level VDDQ/2 Output reference level VDDQ/2 DQ 50Ω 30pF* VDDQ/2 * Distributed Test Jig Capacitance Notes: 1. Include scope and jig capacitance. 2. Test conditions as shown unless otherwise noted. Rev: 1.04 6/2006 JTAG Port AC Test Load 26/33 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. NoBL is a trademark of Cypress Semiconductor Corp.. NtRAM is a trademark of Samsung Electronics Co.. ZBT is a trademark of Integrated Device Technology, Inc. © 2004, GSI Technology GS882Z18/36B(B/D)-xxxV JTAG Port Timing Diagram tTKC tTKH tTKL TCK tTH tTS TDI tTH tTS TMS tTKQ TDO tTH tTS Parallel SRAM input JTAG Port AC Electrical Characteristics Parameter Symbol Min Max Unit TCK Cycle Time tTKC 50 — ns TCK Low to TDO Valid tTKQ — 20 ns TCK High Pulse Width tTKH 20 — ns TCK Low Pulse Width tTKL 20 — ns TDI & TMS Set Up Time tTS 10 — ns TDI & TMS Hold Time tTH 10 — ns Boundary Scan (BSDL Files) For information regarding the Boundary Scan Chain, or to obtain BSDL files for this part, please contact our Applications Engineering Department at: [email protected]. Rev: 1.04 6/2006 27/33 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. NoBL is a trademark of Cypress Semiconductor Corp.. NtRAM is a trademark of Samsung Electronics Co.. ZBT is a trademark of Integrated Device Technology, Inc. © 2004, GSI Technology GS882Z18/36B(B/D)-xxxV Package Dimensions—119-Bump FPBGA (Package B, Variation 2) TOP VIEW A1 1 2 3 4 5 6 BOTTOM VIEW A1 Ø0.10S C Ø0.30S C AS B S Ø0.60~0.90 (119x) 7 7 6 5 4 3 2 1 A B C D E F G H J K L M N P R T U 20.32 22±0.10 1.27 A B C D E F G H J K L M N P R T U B 1.27 0.15 C 7.62 Rev: 1.04 6/2006 SEATING PLANE 14±0.10 0.50~0.70 1.86.±0.13 C A 0.20(4x) 28/33 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. NoBL is a trademark of Cypress Semiconductor Corp.. NtRAM is a trademark of Samsung Electronics Co.. ZBT is a trademark of Integrated Device Technology, Inc. © 2004, GSI Technology GS882Z18/36B(B/D)-xxxV Package Dimensions—165-Bump FPBGA (Package D) A1 CORNER TOP VIEW BOTTOM VIEW Ø0.10 M C Ø0.25 M C A B Ø0.40~0.60 (165x) 1 2 3 4 5 6 7 8 9 10 11 A1 CORNER 11 10 9 8 7 6 5 4 3 2 1 A B C D E F G H J K L M N P R 1.0 14.0 15±0.05 1.0 A B C D E F G H J K L M N P R A 1.0 1.0 10.0 0.20 C B Rev: 1.04 6/2006 SEATING PLANE 0.20(4x) 0.36~0.46 1.40 MAX. C 13±0.05 29/33 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. NoBL is a trademark of Cypress Semiconductor Corp.. NtRAM is a trademark of Samsung Electronics Co.. ZBT is a trademark of Integrated Device Technology, Inc. © 2004, GSI Technology GS882Z18/36B(B/D)-xxxV Ordering Information for GSI Synchronous Burst RAMs Org Part Number1 Type Voltage Option Package Speed2 (MHz/ns) 512K x 18 GS882Z18BB-250V NBT 1.8 V or 2.5 V 119 BGA (var. 2) 250/5.5 C MP 512K x 18 GS882Z18BB-200V NBT 1.8 V or 2.5 V 119 BGA (var. 2) 200/6.5 C MP 512K x 18 GS882Z18BB-150V NBT 1.8 V or 2.5 V 119 BGA (var. 2) 150/7.5 C MP 256K x 36 GS882Z36BB-250V NBT 1.8 V or 2.5 V 119 BGA (var. 2) 250/5.5 C MP 256K x 36 GS882Z36BB-200V NBT 1.8 V or 2.5 V 119 BGA (var. 2) 200/6.5 C MP 256K x 36 GS882Z36BB-150V NBT 1.8 V or 2.5 V 119 BGA (var. 2) 150/7.5 C MP 512K x 18 GS882Z18BB-250IV NBT 1.8 V or 2.5 V 119 BGA (var. 2) 250/5.5 I MP 512K x 18 GS882Z18BB-200IV NBT 1.8 V or 2.5 V 119 BGA (var. 2) 200/6.5 I MP 512K x 18 GS882Z18BB-150IV NBT 1.8 V or 2.5 V 119 BGA (var. 2) 150/7.5 I MP 256K x 36 GS882Z36BB-250IV NBT 1.8 V or 2.5 V 119 BGA (var. 2) 250/5.5 I MP 256K x 36 GS882Z36BB-200IV NBT 1.8 V or 2.5 V 119 BGA (var. 2) 200/6.5 I MP 256K x 36 GS882Z36BB-150IV NBT 1.8 V or 2.5 V 119 BGA (var. 2) 150/7.5 I MP 512K x 18 GS882Z18BGB-250V NBT 1.8 V or 2.5 V RoHS-compliant 119 BGA (var. 2) 250/5.5 C PQ 512K x 18 GS882Z18BGB-200V NBT 1.8 V or 2.5 V RoHS-compliant 119 BGA (var. 2) 200/6.5 C PQ 512K x 18 GS882Z18BGB-150V NBT 1.8 V or 2.5 V RoHS-compliant 119 BGA (var. 2) 150/7.5 C PQ 256K x 36 GS882Z36BGB-250V NBT 1.8 V or 2.5 V RoHS-compliant 119 BGA (var. 2) 250/5.5 C PQ 256K x 36 GS882Z36BGB-200V NBT 1.8 V or 2.5 V RoHS-compliant 119 BGA (var. 2) 200/6.5 C PQ 256K x 36 GS882Z36BGB-150V NBT 1.8 V or 2.5 V RoHS-compliant 119 BGA (var. 2) 150/7.5 C PQ 512K x 18 GS882Z18BGB-250IV NBT 1.8 V or 2.5 V RoHS-compliant 119 BGA (var. 2) 250/5.5 I PQ 512K x 18 GS882Z18BGB-200IV NBT 1.8 V or 2.5 V RoHS-compliant 119 BGA (var. 2) 200/6.5 I PQ 512K x 18 GS882Z18BGB-150IV NBT 1.8 V or 2.5 V RoHS-compliant 119 BGA (var. 2) 150/7.5 I PQ 256K x 36 GS882Z36BGB-250IV NBT 1.8 V or 2.5 V RoHS-compliant 119 BGA (var. 2) 250/5.5 I PQ 256K x 36 GS882Z36BGB-200IV NBT 1.8 V or 2.5 V RoHS-compliant 119 BGA (var. 2) 200/6.5 I PQ TA3 Status4 Notes: 1. Customers requiring delivery in Tape and Reel should add the character “T” to the end of the part number. Example: GS882Z36BB-150IVT. 2. The speed column indicates the cycle frequency (MHz) of the device in Pipeline mode and the latency (ns) in Flow Through mode. Each device is Pipeline/Flow Through mode-selectable by the user. 3. TA = C = Commercial Temperature Range. TA = I = Industrial Temperature Range. 4. MP = Mass Production. PQ = Pre-Qualification. 5. GSI offers other versions this type of device in many different configurations and with a variety of different features, only some of which are covered in this data sheet. See the GSI Technology web site (www.gsitechnology.com) for a complete listing of current offerings Rev: 1.04 6/2006 30/33 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. NoBL is a trademark of Cypress Semiconductor Corp.. NtRAM is a trademark of Samsung Electronics Co.. ZBT is a trademark of Integrated Device Technology, Inc. © 2004, GSI Technology GS882Z18/36B(B/D)-xxxV Ordering Information for GSI Synchronous Burst RAMs (Continued) Org Part Number1 Type Voltage Option Package Speed2 (MHz/ns) 256K x 36 GS882Z36BGB-150IV NBT 1.8 V or 2.5 V RoHS-compliant 119 BGA (var. 2) 150/7.5 I PQ 512K x 18 GS882Z18BD-250V NBT 1.8 V or 2.5 V 165 BGA 250/5.5 C MP 512K x 18 GS882Z18BD-200V NBT 1.8 V or 2.5 V 165 BGA 200/6.5 C MP 512K x 18 GS882Z18BD-150V NBT 1.8 V or 2.5 V 165 BGA 150/7.5 C MP 256K x 36 GS882Z36BD-250V NBT 1.8 V or 2.5 V 165 BGA 250/5.5 C MP 256K x 36 GS882Z36BD-200V NBT 1.8 V or 2.5 V 165 BGA 200/6.5 C MP 256K x 36 GS882Z36BD-150V NBT 1.8 V or 2.5 V 165 BGA 150/7.5 C MP 512K x 18 GS882Z18BD-250IV NBT 1.8 V or 2.5 V 165 BGA 250/5.5 I MP 512K x 18 GS882Z18BD-200IV NBT 1.8 V or 2.5 V 165 BGA 200/6.5 I MP 512K x 18 GS882Z18BD-150IV NBT 1.8 V or 2.5 V 165 BGA 150/7.5 I MP 256K x 36 GS882Z36BD-250IV NBT 1.8 V or 2.5 V 165 BGA 250/5.5 I MP 256K x 36 GS882Z36BD-200IV NBT 1.8 V or 2.5 V 165 BGA 200/6.5 I MP 256K x 36 GS882Z36BD-150IV NBT 1.8 V or 2.5 V 165 BGA 150/7.5 I MP 512K x 18 GS882Z18BGD-250V NBT 1.8 V or 2.5 V RoHS-compliant 165 BGA 250/5.5 C PQ 512K x 18 GS882Z18BGD-200V NBT 1.8 V or 2.5 V RoHS-compliant 165 BGA 200/6.5 C PQ TA3 Status4 Notes: 1. Customers requiring delivery in Tape and Reel should add the character “T” to the end of the part number. Example: GS882Z36BB-150IVT. 2. The speed column indicates the cycle frequency (MHz) of the device in Pipeline mode and the latency (ns) in Flow Through mode. Each device is Pipeline/Flow Through mode-selectable by the user. 3. TA = C = Commercial Temperature Range. TA = I = Industrial Temperature Range. 4. MP = Mass Production. PQ = Pre-Qualification. 5. GSI offers other versions this type of device in many different configurations and with a variety of different features, only some of which are covered in this data sheet. See the GSI Technology web site (www.gsitechnology.com) for a complete listing of current offerings Rev: 1.04 6/2006 31/33 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. NoBL is a trademark of Cypress Semiconductor Corp.. NtRAM is a trademark of Samsung Electronics Co.. ZBT is a trademark of Integrated Device Technology, Inc. © 2004, GSI Technology GS882Z18/36B(B/D)-xxxV Ordering Information for GSI Synchronous Burst RAMs (Continued) Org Part Number1 Type Voltage Option Package Speed2 (MHz/ns) 512K x 18 GS882Z18BGD-150V NBT 1.8 V or 2.5 V RoHS-compliant 165 BGA 150/7.5 C PQ 256K x 36 GS882Z36BGD-250V NBT 1.8 V or 2.5 V RoHS-compliant 165 BGA 250/5.5 C PQ 256K x 36 GS882Z36BGD-200V NBT 1.8 V or 2.5 V RoHS-compliant 165 BGA 200/6.5 C PQ 256K x 36 GS882Z36BGD-150V NBT 1.8 V or 2.5 V RoHS-compliant 165 BGA 150/7.5 C PQ 512K x 18 GS882Z18BGD-250IV NBT 1.8 V or 2.5 V RoHS-compliant 165 BGA 250/5.5 I PQ 512K x 18 GS882Z18BGD-200IV NBT 1.8 V or 2.5 V RoHS-compliant 165 BGA 200/6.5 I PQ 512K x 18 GS882Z18BGD-150IV NBT 1.8 V or 2.5 V RoHS-compliant 165 BGA 150/7.5 I PQ 256K x 36 GS882Z36BGD-250IV NBT 1.8 V or 2.5 V RoHS-compliant 165 BGA 250/5.5 I PQ 256K x 36 GS882Z36BGD-200IV NBT 1.8 V or 2.5 V RoHS-compliant 165 BGA 200/6.5 I PQ 256K x 36 GS882Z36BGD-150IV NBT 1.8 V or 2.5 V RoHS-compliant 165 BGA 150/7.5 I PQ TA3 Status4 Notes: 1. Customers requiring delivery in Tape and Reel should add the character “T” to the end of the part number. Example: GS882Z36BB-150IVT. 2. The speed column indicates the cycle frequency (MHz) of the device in Pipeline mode and the latency (ns) in Flow Through mode. Each device is Pipeline/Flow Through mode-selectable by the user. 3. TA = C = Commercial Temperature Range. TA = I = Industrial Temperature Range. 4. MP = Mass Production. PQ = Pre-Qualification. 5. GSI offers other versions this type of device in many different configurations and with a variety of different features, only some of which are covered in this data sheet. See the GSI Technology web site (www.gsitechnology.com) for a complete listing of current offerings Rev: 1.04 6/2006 32/33 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. NoBL is a trademark of Cypress Semiconductor Corp.. NtRAM is a trademark of Samsung Electronics Co.. ZBT is a trademark of Integrated Device Technology, Inc. © 2004, GSI Technology GS882Z18/36B(B/D)-xxxV 9Mb Sync SRAM Datasheet Revision History DS/DateRev. Code: Old; New Types of Changes Page;Revisions;Reason Format or Content • Creation of new datasheet 882ZVxxB_r1 Content • Updated mechanical drawings and added variation numbers to ordering information 882ZVxxB_r1_01; 882ZVxxB_r1_02 Content • Corrected mode pins table note • Corrected tZZI to tZZS on page 13 • Re-added Temperature Condition table to Abs Max section • Added Pb-Free information 882ZVxxB_r1_02; 882ZVxxB_r1_03 Content 882ZVxxB_r1_03; 882ZxxB_V_r1_04 Content 882ZVxxB_r1; 882ZVxxB_r1_01 Rev: 1.04 6/2006 • Removed 150 MHz speed bin • Updated entire document to reflect new part nomenclature 33/33 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. NoBL is a trademark of Cypress Semiconductor Corp.. NtRAM is a trademark of Samsung Electronics Co.. ZBT is a trademark of Integrated Device Technology, Inc. © 2004, GSI Technology