MOTOROLA MRF5S19130R3 N-channel enhancement-mode lateral mosfet Datasheet

MOTOROLA
Freescale Semiconductor, Inc.
Order this document
by MRF5S19130/D
SEMICONDUCTOR TECHNICAL DATA
MRF5S19130R3 and MRF5S19130SR3 replaced by MRF5S19130HR3 and
MRF5S19130HSR3. “H” suffix indicates lower thermal resistance package.
MRF5S19130R3
RF Power Field Effect Transistors MRF5S19130SR3
The RF MOSFET Line
Designed for PCN and PCS base station applications at frequencies from
1.9 to 2.0 GHz. Suitable for TDMA, CDMA and multicarrier amplifier
applications.
• Typical 2 - Carrier N - CDMA Performance for VDD = 28 Volts,
IDQ = 1200 mA, f1 = 1958.75 MHz, f2 = 1961.25 MHz
IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13)
1.2288 MHz Channel Bandwidth Carrier. Adjacent Channels Measured
over a 30 kHz Bandwidth at f1 - 885 kHz and f2 +885 kHz. Distortion
Products Measured over 1.2288 MHz Bandwidth at f1 - 2.5 MHz and
f2 +2.5 MHz. Peak/Avg. = 9.8 dB @ 0.01% Probability on CCDF.
Output Power — 26 Watts Avg.
Power Gain — 13 dB
Efficiency — 25%
IM3 — - 37 dBc
ACPR — - 51 dB
• Internally Matched, Controlled Q, for Ease of Use
• High Gain, High Efficiency and High Linearity
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Capable of Handling 10:1 VSWR, @ 28 Vdc, f1 = 1960 MHz,
110 Watts CW Output Power
• Excellent Thermal Stability
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Qualified Up to a Maximum of 32 V Operation
• Available in Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
1990 MHz, 26 W AVG.,
2 x N - CDMA, 28 V
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465B - 03, STYLE 1
NI - 880
MRF5S19130R3
CASE 465C - 02, STYLE 1
NI - 880S
MRF5S19130SR3
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain - Source Voltage
VDSS
65
Vdc
Gate - Source Voltage
VGS
- 0.5, +15
Vdc
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
324
1.85
Watts
W/°C
Storage Temperature Range
Tstg
- 65 to +150
°C
Operating Junction Temperature
TJ
200
°C
CW
110
Watts
Symbol
Max
Unit
CW Operation
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 80°C, 110 W CW
Case Temperature 80°C, 26 W CW
RθJC
0.54
0.60
°C/W
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 1
MOTOROLA
RF DEVICE DATA
 Motorola,
Inc. 2003
MRF5S19130R3 MRF5S19130SR3
1
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ARCHIVE INFORMATION
ARCHIVE INFORMATION
Freescale Semiconductor, Inc.
N - Channel Enhancement - Mode Lateral MOSFETs
Freescale Semiconductor, Inc.
ESD PROTECTION CHARACTERISTICS
Test Conditions
Class
Human Body Model
2 (Minimum)
Machine Model
M4 (Minimum)
Charge Device Model
C7 (Minimum)
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Zero Gate Voltage Drain Leakage Current
(VDS = 65 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
µAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
—
—
1
µAdc
Gate - Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
µAdc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 200 µAdc)
VGS(th)
2.5
2.8
3.5
Vdc
Gate Quiescent Voltage
(VDS = 28 Vdc, ID = 1200 mAdc)
VGS(Q)
—
3.8
—
Vdc
Drain - Source On - Voltage
(VGS = 10 Vdc, ID = 3 Adc)
VDS(on)
—
0.26
—
Vdc
Forward Transconductance
(VDS = 10 Vdc, ID = 3 Adc)
gfs
—
7.5
—
S
Crss
—
2.7
—
pF
ON CHARACTERISTICS
DYNAMIC CHARACTERISTICS
Reverse Transfer Capacitance (1)
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system) 2 - Carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carriers.
Peak/Avg = 9.8 dB @ 0.01% Probability on CCDF.
Common - Source Amplifier Power Gain
(VDD = 28 Vdc, Pout = 26 W Avg, IDQ = 1200 mA, f1 = 1930 MHz,
f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz)
Gps
12
13
—
dB
Drain Efficiency
(VDD = 28 Vdc, Pout = 26 W Avg, IDQ = 1200 mA, f1 = 1930 MHz,
f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz)
η
23
25
—
%
IM3
—
- 37
- 35
dBc
ACPR
—
- 51
- 48
dBc
IRL
—
- 15
-9
dB
Third Order Intermodulation Distortion
(VDD = 28 Vdc, Pout = 26 W Avg, IDQ = 1200 mA, f1 = 1930 MHz,
f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz; IM3 measured
over 1.2288 MHz Bandwidth at f1 - 2.5 MHz and f2 +2.5 MHz
referenced to carrier channel power.)
Adjacent Channel Power Ratio
(VDD = 28 Vdc, Pout = 26 W Avg, IDQ = 1200 mA, f1 = 1930 MHz,
f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz; ACPR
measured over 30 kHz Bandwidth at f1 - 885 kHz and f2 +885 kHz)
Input Return Loss
(VDD = 28 Vdc, Pout = 26 W Avg, IDQ = 1200 mA, f1 = 1930 MHz,
f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz)
(1) Part is internally matched both on input and output.
MRF5S19130R3 MRF5S19130SR3
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MOTOROLA RF DEVICE DATA
ARCHIVE INFORMATION
Freescale Semiconductor, Inc.
ARCHIVE
INFORMATION
OFF CHARACTERISTICS
Freescale Semiconductor, Inc.
B1
R1
VGG
+
C10
R3
+
R2
C9
C6
C7
C16
C17
C19
C18
+
+
+
+
+
C20
C21
C22
C23
C24
C15
C8
RF
OUTPUT
Z22 Z23 Z24
Z13
RF
INPUT
DUT
Z10
Z1
Z2
Z3
Z4 Z5 Z6 Z7
VDD
Z12
Z15 Z16 Z17 Z18 Z19 Z20 Z21
Z8 Z9
C25
Z14
C1
C2
C3
C4
Z11
C5
R4
+
C11
Z1
Z2
Z3
Z4
Z5
Z6
Z7
Z8
Z9
Z10, Z11
Z12
0.200″
0.170″
0.480″
0.926″
0.590″
0.519″
0.022″
0.046″
0.080″
1.280″
0.053″
C12
x 0.085″
x 0.085″
x 0.085″
x 0.085″
x 0.085″
x 0.955″
x 0.955″
x 0.955″
x 0.955″
x 0.046″
x 1.080″
C14
C13
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
x 0.160″ Taper
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
C26
C27
Z13, Z14
Z15
Z16
Z17
Z18
Z19
Z20
Z21
Z22
Z23
PCB
C28
C29
C30
+
+
+
+
C31
C32
C33
C34
1.125″ x 0.068″ Microstrip
0.071″ x 1.080″ Microstrip
0.060″ x 1.080″ Microstrip
0.290″ x 1.080″ Microstrip
1.075″ x 0.825″ x 0.125″ Taper
0.635″ x 0.120″ Microstrip
0.185″ x 0.096″ Microstrip
0.414″ x 0.084″ Microstrip
0.040″ x 0.084″ Microstrip
0.199″ x 0.057″ Microstrip
Arlon GX0300 - 55 - 22, 0.03″, εr = 2.55
Figure 1. MRF5S19130R3(SR3) Test Circuit Schematic
Table 1. MRF5S19130R3(SR3) Test Circuit Component Designations and Values
Part
Description
Value, P/N or DWG
Manufacturer
B1, B2
Short RF Bead
95F786
Newark
C1
0.8 pF Chip Capacitor, B Case
100B0R8BP 500X
ATC
C2, C4
0.6 – 4.5 pF Gigatrim Variable Capacitors
44F3358
Newark
C3
2.2 pF Chip Capacitor, B Case
100B2R2BP 500X
ATC
C5
1.7 pF Chip Capacitor, B Case
100B1R7BP 500X
ATC
C8, C13
9.1 pF Chip Capacitors, B Case
100B9R1CP 500X
ATC
C9, C11
1 µF, 25 V Tantalum Capacitors
92F1845
Newark
C10
47 µF, 50 V Electrolytic Capacitor
51F2913
Newark
C6, C14, C17, C18, C19, C28, C29, C30
0.1 µF Chip Capacitors, B Case
CDR33BX104AKWS
Kemet
C7, C12, C16, C27
1000 pF Chip Capacitors, B Case
100B102JP 500X
ATC
C15, C26
8.2 pF Chip Capacitors, B Case
100B8R2CP 500X
ATC
C20, C21, C22, C23, C31, C32, C33, C34
22 µF, 35 V Tantalum Capacitors
92F1853
Newark
C24
470 µF, 63 V Electrolytic Capacitor
95F4579
Newark
C25
6.2 pF Chip Capacitor, B Case
100B6R2CP 500X
ATC
R1
1 kW Chip Resistor
D5534M07B1K00R
Newark
R2
560 kW Chip Resistor
CR1206 564JT
Newark
R3, R4
12 W Chip Resistors
RM73B2B120JT
Garrett Electtonics
MOTOROLA RF DEVICE DATA
MRF5S19130R3 MRF5S19130SR3
3
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ARCHIVE INFORMATION
ARCHIVE INFORMATION
Freescale Semiconductor, Inc.
B2
Freescale Semiconductor, Inc.
C18
C10
MRF5S19130
Rev 5
B1
R1
R3
C19
C15
C20 C21
C24
C8
VGG
VDD
C16
C3
Freescale Semiconductor, Inc.
ARCHIVE
INFORMATION
C2
C7
C17
C5
C4
C11
B2
C14
C12
R4
C22 C23
C6
C25
C33 C34
C28
C27
C13
C26
C31 C32
C29 C30
Figure 2. MRF5S19130R3(SR3) Test Circuit Component Layout
MRF5S19130R3 MRF5S19130SR3
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MOTOROLA RF DEVICE DATA
ARCHIVE INFORMATION
C1
C9
CUT OUT AREA
R2
Freescale Semiconductor, Inc.
13
35
Gps
30
η
12
25
VDD = 28 Vdc, Pout = 26 W (Avg.), IDQ = 1200 mA
2−Carrier N−CDMA, 2.5 MHz Carrier Spacing
1.2288 MHz Channel Bandwidth
Peak/Avg. = 9.8 dB @ 0.01% Probability (CCDF)
11
10
IRL
9
8
−40
ACPR
−50
−5
−10
−15
−20
−25
−30
f, FREQUENCY (MHz)
Figure 3. 2 - Carrier N - CDMA Broadband Performance
16
−25
IM3, THIRD ORDER
INTERMODULATION DISTORTION (dBc)
VDD = 28 Vdc, f1 = 1958.75 MHz, f2 = 1961.25 MHz
Two−Tone Measurement, 2.5 MHz Tone Spacing
15
G ps , POWER GAIN (dB)
IDQ = 1800 mA
14
1500 mA
13
12
1200 mA
900 mA
11
600 mA
10
−30
VDD = 28 Vdc, f1 = 1958.75 MHz, f2 = 1961.25 MHz
Two−Tone Measurement, 2.5 MHz Tone Spacing
−35
IDQ = 1800 mA
−40
1500 mA
600 mA
−45
1200 mA
−50
−55
900 mA
−60
10
1
100
200
1
Pout, OUTPUT POWER (WATTS) PEP
Figure 5. Third Order Intermodulation
Distortion versus Output Power
60
−25
59
58
3rd Order
−35
−40
5th Order
−45
7th Order
−50
VDD = 28 Vdc, Pout = 130 W (PEP), IDQ = 1200 mA
Two−Tone Measurements, Center Frequency = 1960 MHz
−55
−60
0.1
100
Pout, OUTPUT POWER (WATTS) PEP
−20
−30
10
Figure 4. Two - Tone Power Gain versus
Output Power
Pout , OUTPUT POWER (dBm)
ARCHIVE INFORMATION
−20
5
−60
1900 1910 1920 1930 1940 1950 1960 1970 1980 1990 2000
IMD, INTERMODULATION DISTORTION (dBc)
Freescale Semiconductor, Inc.
−10
−30
IM3
7
6
20
IM3 (dBc), ACPR (dBc)
G ps , POWER GAIN (dB)
14
1
10
Ideal
57
56
P3dB = 53.11 dBm (205.57 W)
55
54
P1dB = 52.54 dBm (179.61 W)
53
52
Actual
51
50
VDD = 28 Vdc, IDQ = 1200 mA
Pulsed CW, 8 µsec (on), 1 msec (off)
Center Frequency = 1960 MHz
49
48
35
36
37
38
39
40
41
42
43
44
TWO−TONE SPACING (MHz)
Pin, INPUT POWER (dBm)
Figure 6. Intermodulation Distortion Products
versus Tone Spacing
Figure 7. Pulse CW Output Power versus
Input Power
MOTOROLA RF DEVICE DATA
200
45
MRF5S19130R3 MRF5S19130SR3
5
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ARCHIVE INFORMATION
40
η, DRAIN
EFFICIENCY (%)
15
IRL, INPUT RETURN LOSS (dB)
TYPICAL CHARACTERISTICS
Freescale Semiconductor, Inc.
−30
VDD = 28 Vdc, IDQ = 1200 mA
f1 = 1958.75 MHz, f2 = 1961.25 MHz
2 x N−CDMA, 2.5 MHz @
1.2288 MHz Channel Bandwidth
Peak/Avg. = 9.8 dB @ 0.01% Probability (CCDF)
30
25
IM3
η
−35
−40
ACPR
20
15
Gps
−45
−50
10
−55
5
−60
−65
1
10
Figure 8. 2 - Carrier N - CDMA ACPR, IM3,
Power Gain and Drain Efficiency
versus Output Power
0
109
−10
MTBF FACTOR (HOURS X AMPS2)
1.2288 MHz
Channel BW
−20
−IM3 @
1.2288 MHz
Integrated BW
−30
+IM3 @
1.2288 MHz
Integrated BW
−40
−50
−60
−70
−ACPR @ 30 kHz
Integrated BW
+ACPR @ 30 kHz
Integrated BW
−80
107
106
105
100
−90
−100
−7.5
108
−6
−4.5
−3
−1.5
0
1.5
3
4.5
f, FREQUENCY (MHz)
Figure 9. 2 - Carrier N - CDMA Spectrum
6
7.5
120
140
160
180
200
TJ, JUNCTION TEMPERATURE (°C)
220
This above graph displays calculated MTBF in hours x ampere2
drain current. Life tests at elevated temperatures have correlated to
better than ±10% of the theoretical prediction for metal failure. Divide
MTBF factor by ID2 for MTBF in a particular application.
Figure 10. MTBF Factor versus Junction
Temperature
MRF5S19130R3 MRF5S19130SR3
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MOTOROLA RF DEVICE DATA
ARCHIVE INFORMATION
0
IM3 (dBc), ACPR (dBc)
η, DRAIN EFFICIENCY (%), G ps , POWER GAIN (dB)
35
Pout, OUTPUT POWER (WATTS) AVG. (N−CDMA)
(dB)
Freescale Semiconductor, Inc.
ARCHIVE
INFORMATION
TYPICAL CHARACTERISTICS
Freescale Semiconductor, Inc.
Zo = 10 Ω
f = 1990 MHz
Zload*
f = 1930 MHz
Zsource
ARCHIVE INFORMATION
ARCHIVE INFORMATION
Freescale Semiconductor, Inc.
f = 1990 MHz
f = 1930 MHz
VDD = 28 V, IDQ = 1.2 A, Pout = 26 W (2−Carrier N−CDMA)
f
MHz
Zsource
Ω
Zload
Ω
1930
2.57 - j9.1
1.48 - j1.8
1960
2.35 - j7.6
1.28 - j1.5
1990
3.86 - j9.2
1.42 - j1.3
Zsource = Test circuit impedance as measured from
gate to ground.
Zload
= Test circuit impedance as measured
from drain to ground.
Output
Matching
Network
Device
Under Test
Input
Matching
Network
Z
source
Z
load
Figure 11. Series Equivalent Source and Load Impedance
MOTOROLA RF DEVICE DATA
MRF5S19130R3 MRF5S19130SR3
7
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Freescale Semiconductor, Inc.
ARCHIVE INFORMATION
Freescale Semiconductor, Inc.
ARCHIVE
INFORMATION
NOTES
MRF5S19130R3 MRF5S19130SR3
For More Information On This Product,
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MOTOROLA RF DEVICE DATA
Freescale Semiconductor, Inc.
ARCHIVE INFORMATION
ARCHIVE INFORMATION
Freescale Semiconductor, Inc.
NOTES
MOTOROLA RF DEVICE DATA
MRF5S19130R3 MRF5S19130SR3
9
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Freescale Semiconductor, Inc.
ARCHIVE INFORMATION
Freescale Semiconductor, Inc.
ARCHIVE
INFORMATION
NOTES
MRF5S19130R3 MRF5S19130SR3
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MOTOROLA RF DEVICE DATA
Freescale Semiconductor, Inc.
PACKAGE DIMENSIONS
B
G
Q
bbb
2X
1
M
T A
M
B
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M−1994.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
4. DELETED
M
B
(FLANGE)
bbb
D
T A
M
B
M
M
M
bbb
ARCHIVE INFORMATION
Freescale Semiconductor, Inc.
DIM
A
B
C
D
E
F
G
H
K
M
N
Q
R
S
aaa
bbb
ccc
2
M
T A
B
M
ccc
M
T A
B
M
ccc
M
N
R
(INSULATOR)
M
T A
(LID)
B
M
S
(LID)
M
aaa
M
T A
B
M
M
(INSULATOR)
M
H
C
F
E
T
A
A
SEATING
PLANE
(FLANGE)
INCHES
MIN
MAX
1.335
1.345
0.535
0.545
0.147
0.200
0.495
0.505
0.035
0.045
0.003
0.006
1.100 BSC
0.057
0.067
0.170
0.210
0.872
0.888
0.871
0.889
.118
.138
0.515
0.525
0.515
0.525
0.007 REF
0.010 REF
0.015 REF
MILLIMETERS
MIN
MAX
33.91
34.16
13.6
13.8
3.73
5.08
12.57
12.83
0.89
1.14
0.08
0.15
27.94 BSC
1.45
1.70
4.32
5.33
22.15
22.55
19.30
22.60
3.00
3.51
13.10
13.30
13.10
13.30
0.178 REF
0.254 REF
0.381 REF
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
CASE 465B - 03
ISSUE B
NI - 880
MRF5S19130R3
B
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M−1994.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
1
B
(FLANGE)
K
DIM
A
B
C
D
E
F
H
K
M
N
R
S
aaa
bbb
ccc
2
bbb
M
D
T A
M
B
M
bbb
M
T A
M
B
M
T A
M
B
R
(INSULATOR)
ccc
M
N
ccc
M
M
T A
M
M
B
S
(LID)
aaa
M
T A
M
B
(LID)
M
(INSULATOR)
M
H
C
T
A
A
(FLANGE)
MOTOROLA RF DEVICE DATA
SEATING
PLANE
MILLIMETERS
MIN
MAX
22.99
23.24
13.60
13.80
3.73
5.08
12.57
12.83
0.89
1.14
0.08
0.15
1.45
1.70
4.32
5.33
22.15
22.55
19.30
22.60
13.10
13.30
13.10
13.30
0.178 REF
0.254 REF
0.381 REF
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
F
E
INCHES
MIN
MAX
0.905
0.915
0.535
0.545
0.147
0.200
0.495
0.505
0.035
0.045
0.003
0.006
0.057
0.067
0.170
0.210
0.872
0.888
0.871
0.889
0.515
0.525
0.515
0.525
0.007 REF
0.010 REF
0.015 REF
CASE 465C - 02
ISSUE A
NI - 880S
MRF5S19130SR3
MRF5S19130R3 MRF5S19130SR3
11
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ARCHIVE INFORMATION
3
K
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or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola
and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees
arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that
Motorola was negligent regarding the design or manufacture of the part.
MOTOROLA and the Stylized M Logo are registered in the US Patent and Trademark Office. All other product or service names are the property of their respective
owners. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.
E Motorola Inc. 2003
HOW TO REACH US:
JAPAN: Motorola Japan Ltd.; SPS, Technical Information Center,
3-20-1, Minami-Azabu, Minato-ku, Tokyo 106-8573, Japan
81-3-3440-3569
USA /EUROPE /LOCATIONS NOT LISTED:
Motorola Literature Distribution
P.O. Box 5405, Denver, Colorado 80217
1-800-521-6274 or 480-768-2130
ASIA /PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Centre,
2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong
852-26668334
HOME PAGE: http://motorola.com/semiconductors
MRF5S19130R3 MRF5S19130SR3
MOTOROLA RF DEVICE DATA
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