MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF5S19130/D SEMICONDUCTOR TECHNICAL DATA MRF5S19130R3 and MRF5S19130SR3 replaced by MRF5S19130HR3 and MRF5S19130HSR3. “H” suffix indicates lower thermal resistance package. MRF5S19130R3 RF Power Field Effect Transistors MRF5S19130SR3 The RF MOSFET Line Designed for PCN and PCS base station applications at frequencies from 1.9 to 2.0 GHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. • Typical 2 - Carrier N - CDMA Performance for VDD = 28 Volts, IDQ = 1200 mA, f1 = 1958.75 MHz, f2 = 1961.25 MHz IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) 1.2288 MHz Channel Bandwidth Carrier. Adjacent Channels Measured over a 30 kHz Bandwidth at f1 - 885 kHz and f2 +885 kHz. Distortion Products Measured over 1.2288 MHz Bandwidth at f1 - 2.5 MHz and f2 +2.5 MHz. Peak/Avg. = 9.8 dB @ 0.01% Probability on CCDF. Output Power — 26 Watts Avg. Power Gain — 13 dB Efficiency — 25% IM3 — - 37 dBc ACPR — - 51 dB • Internally Matched, Controlled Q, for Ease of Use • High Gain, High Efficiency and High Linearity • Integrated ESD Protection • Designed for Maximum Gain and Insertion Phase Flatness • Capable of Handling 10:1 VSWR, @ 28 Vdc, f1 = 1960 MHz, 110 Watts CW Output Power • Excellent Thermal Stability • Characterized with Series Equivalent Large - Signal Impedance Parameters • Qualified Up to a Maximum of 32 V Operation • Available in Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. 1990 MHz, 26 W AVG., 2 x N - CDMA, 28 V LATERAL N - CHANNEL RF POWER MOSFETs CASE 465B - 03, STYLE 1 NI - 880 MRF5S19130R3 CASE 465C - 02, STYLE 1 NI - 880S MRF5S19130SR3 MAXIMUM RATINGS Rating Symbol Value Unit Drain - Source Voltage VDSS 65 Vdc Gate - Source Voltage VGS - 0.5, +15 Vdc Total Device Dissipation @ TC = 25°C Derate above 25°C PD 324 1.85 Watts W/°C Storage Temperature Range Tstg - 65 to +150 °C Operating Junction Temperature TJ 200 °C CW 110 Watts Symbol Max Unit CW Operation THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Case Temperature 80°C, 110 W CW Case Temperature 80°C, 26 W CW RθJC 0.54 0.60 °C/W NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 1 MOTOROLA RF DEVICE DATA Motorola, Inc. 2003 MRF5S19130R3 MRF5S19130SR3 1 For ForMore MoreInformation InformationOn OnThis ThisProduct, Product, Go Goto: to:www.freescale.com www.freescale.com ARCHIVE INFORMATION ARCHIVE INFORMATION Freescale Semiconductor, Inc. N - Channel Enhancement - Mode Lateral MOSFETs Freescale Semiconductor, Inc. ESD PROTECTION CHARACTERISTICS Test Conditions Class Human Body Model 2 (Minimum) Machine Model M4 (Minimum) Charge Device Model C7 (Minimum) ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) IDSS — — 10 µAdc Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) IDSS — — 1 µAdc Gate - Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS — — 1 µAdc Gate Threshold Voltage (VDS = 10 Vdc, ID = 200 µAdc) VGS(th) 2.5 2.8 3.5 Vdc Gate Quiescent Voltage (VDS = 28 Vdc, ID = 1200 mAdc) VGS(Q) — 3.8 — Vdc Drain - Source On - Voltage (VGS = 10 Vdc, ID = 3 Adc) VDS(on) — 0.26 — Vdc Forward Transconductance (VDS = 10 Vdc, ID = 3 Adc) gfs — 7.5 — S Crss — 2.7 — pF ON CHARACTERISTICS DYNAMIC CHARACTERISTICS Reverse Transfer Capacitance (1) (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system) 2 - Carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carriers. Peak/Avg = 9.8 dB @ 0.01% Probability on CCDF. Common - Source Amplifier Power Gain (VDD = 28 Vdc, Pout = 26 W Avg, IDQ = 1200 mA, f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz) Gps 12 13 — dB Drain Efficiency (VDD = 28 Vdc, Pout = 26 W Avg, IDQ = 1200 mA, f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz) η 23 25 — % IM3 — - 37 - 35 dBc ACPR — - 51 - 48 dBc IRL — - 15 -9 dB Third Order Intermodulation Distortion (VDD = 28 Vdc, Pout = 26 W Avg, IDQ = 1200 mA, f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz; IM3 measured over 1.2288 MHz Bandwidth at f1 - 2.5 MHz and f2 +2.5 MHz referenced to carrier channel power.) Adjacent Channel Power Ratio (VDD = 28 Vdc, Pout = 26 W Avg, IDQ = 1200 mA, f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz; ACPR measured over 30 kHz Bandwidth at f1 - 885 kHz and f2 +885 kHz) Input Return Loss (VDD = 28 Vdc, Pout = 26 W Avg, IDQ = 1200 mA, f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz) (1) Part is internally matched both on input and output. MRF5S19130R3 MRF5S19130SR3 For More Information On This Product, 2 Go to: www.freescale.com MOTOROLA RF DEVICE DATA ARCHIVE INFORMATION Freescale Semiconductor, Inc. ARCHIVE INFORMATION OFF CHARACTERISTICS Freescale Semiconductor, Inc. B1 R1 VGG + C10 R3 + R2 C9 C6 C7 C16 C17 C19 C18 + + + + + C20 C21 C22 C23 C24 C15 C8 RF OUTPUT Z22 Z23 Z24 Z13 RF INPUT DUT Z10 Z1 Z2 Z3 Z4 Z5 Z6 Z7 VDD Z12 Z15 Z16 Z17 Z18 Z19 Z20 Z21 Z8 Z9 C25 Z14 C1 C2 C3 C4 Z11 C5 R4 + C11 Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 Z10, Z11 Z12 0.200″ 0.170″ 0.480″ 0.926″ 0.590″ 0.519″ 0.022″ 0.046″ 0.080″ 1.280″ 0.053″ C12 x 0.085″ x 0.085″ x 0.085″ x 0.085″ x 0.085″ x 0.955″ x 0.955″ x 0.955″ x 0.955″ x 0.046″ x 1.080″ C14 C13 Microstrip Microstrip Microstrip Microstrip Microstrip x 0.160″ Taper Microstrip Microstrip Microstrip Microstrip Microstrip C26 C27 Z13, Z14 Z15 Z16 Z17 Z18 Z19 Z20 Z21 Z22 Z23 PCB C28 C29 C30 + + + + C31 C32 C33 C34 1.125″ x 0.068″ Microstrip 0.071″ x 1.080″ Microstrip 0.060″ x 1.080″ Microstrip 0.290″ x 1.080″ Microstrip 1.075″ x 0.825″ x 0.125″ Taper 0.635″ x 0.120″ Microstrip 0.185″ x 0.096″ Microstrip 0.414″ x 0.084″ Microstrip 0.040″ x 0.084″ Microstrip 0.199″ x 0.057″ Microstrip Arlon GX0300 - 55 - 22, 0.03″, εr = 2.55 Figure 1. MRF5S19130R3(SR3) Test Circuit Schematic Table 1. MRF5S19130R3(SR3) Test Circuit Component Designations and Values Part Description Value, P/N or DWG Manufacturer B1, B2 Short RF Bead 95F786 Newark C1 0.8 pF Chip Capacitor, B Case 100B0R8BP 500X ATC C2, C4 0.6 – 4.5 pF Gigatrim Variable Capacitors 44F3358 Newark C3 2.2 pF Chip Capacitor, B Case 100B2R2BP 500X ATC C5 1.7 pF Chip Capacitor, B Case 100B1R7BP 500X ATC C8, C13 9.1 pF Chip Capacitors, B Case 100B9R1CP 500X ATC C9, C11 1 µF, 25 V Tantalum Capacitors 92F1845 Newark C10 47 µF, 50 V Electrolytic Capacitor 51F2913 Newark C6, C14, C17, C18, C19, C28, C29, C30 0.1 µF Chip Capacitors, B Case CDR33BX104AKWS Kemet C7, C12, C16, C27 1000 pF Chip Capacitors, B Case 100B102JP 500X ATC C15, C26 8.2 pF Chip Capacitors, B Case 100B8R2CP 500X ATC C20, C21, C22, C23, C31, C32, C33, C34 22 µF, 35 V Tantalum Capacitors 92F1853 Newark C24 470 µF, 63 V Electrolytic Capacitor 95F4579 Newark C25 6.2 pF Chip Capacitor, B Case 100B6R2CP 500X ATC R1 1 kW Chip Resistor D5534M07B1K00R Newark R2 560 kW Chip Resistor CR1206 564JT Newark R3, R4 12 W Chip Resistors RM73B2B120JT Garrett Electtonics MOTOROLA RF DEVICE DATA MRF5S19130R3 MRF5S19130SR3 3 For More Information On This Product, Go to: www.freescale.com ARCHIVE INFORMATION ARCHIVE INFORMATION Freescale Semiconductor, Inc. B2 Freescale Semiconductor, Inc. C18 C10 MRF5S19130 Rev 5 B1 R1 R3 C19 C15 C20 C21 C24 C8 VGG VDD C16 C3 Freescale Semiconductor, Inc. ARCHIVE INFORMATION C2 C7 C17 C5 C4 C11 B2 C14 C12 R4 C22 C23 C6 C25 C33 C34 C28 C27 C13 C26 C31 C32 C29 C30 Figure 2. MRF5S19130R3(SR3) Test Circuit Component Layout MRF5S19130R3 MRF5S19130SR3 For More Information On This Product, 4 Go to: www.freescale.com MOTOROLA RF DEVICE DATA ARCHIVE INFORMATION C1 C9 CUT OUT AREA R2 Freescale Semiconductor, Inc. 13 35 Gps 30 η 12 25 VDD = 28 Vdc, Pout = 26 W (Avg.), IDQ = 1200 mA 2−Carrier N−CDMA, 2.5 MHz Carrier Spacing 1.2288 MHz Channel Bandwidth Peak/Avg. = 9.8 dB @ 0.01% Probability (CCDF) 11 10 IRL 9 8 −40 ACPR −50 −5 −10 −15 −20 −25 −30 f, FREQUENCY (MHz) Figure 3. 2 - Carrier N - CDMA Broadband Performance 16 −25 IM3, THIRD ORDER INTERMODULATION DISTORTION (dBc) VDD = 28 Vdc, f1 = 1958.75 MHz, f2 = 1961.25 MHz Two−Tone Measurement, 2.5 MHz Tone Spacing 15 G ps , POWER GAIN (dB) IDQ = 1800 mA 14 1500 mA 13 12 1200 mA 900 mA 11 600 mA 10 −30 VDD = 28 Vdc, f1 = 1958.75 MHz, f2 = 1961.25 MHz Two−Tone Measurement, 2.5 MHz Tone Spacing −35 IDQ = 1800 mA −40 1500 mA 600 mA −45 1200 mA −50 −55 900 mA −60 10 1 100 200 1 Pout, OUTPUT POWER (WATTS) PEP Figure 5. Third Order Intermodulation Distortion versus Output Power 60 −25 59 58 3rd Order −35 −40 5th Order −45 7th Order −50 VDD = 28 Vdc, Pout = 130 W (PEP), IDQ = 1200 mA Two−Tone Measurements, Center Frequency = 1960 MHz −55 −60 0.1 100 Pout, OUTPUT POWER (WATTS) PEP −20 −30 10 Figure 4. Two - Tone Power Gain versus Output Power Pout , OUTPUT POWER (dBm) ARCHIVE INFORMATION −20 5 −60 1900 1910 1920 1930 1940 1950 1960 1970 1980 1990 2000 IMD, INTERMODULATION DISTORTION (dBc) Freescale Semiconductor, Inc. −10 −30 IM3 7 6 20 IM3 (dBc), ACPR (dBc) G ps , POWER GAIN (dB) 14 1 10 Ideal 57 56 P3dB = 53.11 dBm (205.57 W) 55 54 P1dB = 52.54 dBm (179.61 W) 53 52 Actual 51 50 VDD = 28 Vdc, IDQ = 1200 mA Pulsed CW, 8 µsec (on), 1 msec (off) Center Frequency = 1960 MHz 49 48 35 36 37 38 39 40 41 42 43 44 TWO−TONE SPACING (MHz) Pin, INPUT POWER (dBm) Figure 6. Intermodulation Distortion Products versus Tone Spacing Figure 7. Pulse CW Output Power versus Input Power MOTOROLA RF DEVICE DATA 200 45 MRF5S19130R3 MRF5S19130SR3 5 For More Information On This Product, Go to: www.freescale.com ARCHIVE INFORMATION 40 η, DRAIN EFFICIENCY (%) 15 IRL, INPUT RETURN LOSS (dB) TYPICAL CHARACTERISTICS Freescale Semiconductor, Inc. −30 VDD = 28 Vdc, IDQ = 1200 mA f1 = 1958.75 MHz, f2 = 1961.25 MHz 2 x N−CDMA, 2.5 MHz @ 1.2288 MHz Channel Bandwidth Peak/Avg. = 9.8 dB @ 0.01% Probability (CCDF) 30 25 IM3 η −35 −40 ACPR 20 15 Gps −45 −50 10 −55 5 −60 −65 1 10 Figure 8. 2 - Carrier N - CDMA ACPR, IM3, Power Gain and Drain Efficiency versus Output Power 0 109 −10 MTBF FACTOR (HOURS X AMPS2) 1.2288 MHz Channel BW −20 −IM3 @ 1.2288 MHz Integrated BW −30 +IM3 @ 1.2288 MHz Integrated BW −40 −50 −60 −70 −ACPR @ 30 kHz Integrated BW +ACPR @ 30 kHz Integrated BW −80 107 106 105 100 −90 −100 −7.5 108 −6 −4.5 −3 −1.5 0 1.5 3 4.5 f, FREQUENCY (MHz) Figure 9. 2 - Carrier N - CDMA Spectrum 6 7.5 120 140 160 180 200 TJ, JUNCTION TEMPERATURE (°C) 220 This above graph displays calculated MTBF in hours x ampere2 drain current. Life tests at elevated temperatures have correlated to better than ±10% of the theoretical prediction for metal failure. Divide MTBF factor by ID2 for MTBF in a particular application. Figure 10. MTBF Factor versus Junction Temperature MRF5S19130R3 MRF5S19130SR3 For More Information On This Product, 6 Go to: www.freescale.com MOTOROLA RF DEVICE DATA ARCHIVE INFORMATION 0 IM3 (dBc), ACPR (dBc) η, DRAIN EFFICIENCY (%), G ps , POWER GAIN (dB) 35 Pout, OUTPUT POWER (WATTS) AVG. (N−CDMA) (dB) Freescale Semiconductor, Inc. ARCHIVE INFORMATION TYPICAL CHARACTERISTICS Freescale Semiconductor, Inc. Zo = 10 Ω f = 1990 MHz Zload* f = 1930 MHz Zsource ARCHIVE INFORMATION ARCHIVE INFORMATION Freescale Semiconductor, Inc. f = 1990 MHz f = 1930 MHz VDD = 28 V, IDQ = 1.2 A, Pout = 26 W (2−Carrier N−CDMA) f MHz Zsource Ω Zload Ω 1930 2.57 - j9.1 1.48 - j1.8 1960 2.35 - j7.6 1.28 - j1.5 1990 3.86 - j9.2 1.42 - j1.3 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network Device Under Test Input Matching Network Z source Z load Figure 11. Series Equivalent Source and Load Impedance MOTOROLA RF DEVICE DATA MRF5S19130R3 MRF5S19130SR3 7 For More Information On This Product, Go to: www.freescale.com Freescale Semiconductor, Inc. ARCHIVE INFORMATION Freescale Semiconductor, Inc. ARCHIVE INFORMATION NOTES MRF5S19130R3 MRF5S19130SR3 For More Information On This Product, 8 Go to: www.freescale.com MOTOROLA RF DEVICE DATA Freescale Semiconductor, Inc. ARCHIVE INFORMATION ARCHIVE INFORMATION Freescale Semiconductor, Inc. NOTES MOTOROLA RF DEVICE DATA MRF5S19130R3 MRF5S19130SR3 9 For More Information On This Product, Go to: www.freescale.com Freescale Semiconductor, Inc. ARCHIVE INFORMATION Freescale Semiconductor, Inc. ARCHIVE INFORMATION NOTES MRF5S19130R3 MRF5S19130SR3 For More Information On This Product, 10 Go to: www.freescale.com MOTOROLA RF DEVICE DATA Freescale Semiconductor, Inc. PACKAGE DIMENSIONS B G Q bbb 2X 1 M T A M B NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M−1994. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. 4. DELETED M B (FLANGE) bbb D T A M B M M M bbb ARCHIVE INFORMATION Freescale Semiconductor, Inc. DIM A B C D E F G H K M N Q R S aaa bbb ccc 2 M T A B M ccc M T A B M ccc M N R (INSULATOR) M T A (LID) B M S (LID) M aaa M T A B M M (INSULATOR) M H C F E T A A SEATING PLANE (FLANGE) INCHES MIN MAX 1.335 1.345 0.535 0.545 0.147 0.200 0.495 0.505 0.035 0.045 0.003 0.006 1.100 BSC 0.057 0.067 0.170 0.210 0.872 0.888 0.871 0.889 .118 .138 0.515 0.525 0.515 0.525 0.007 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 33.91 34.16 13.6 13.8 3.73 5.08 12.57 12.83 0.89 1.14 0.08 0.15 27.94 BSC 1.45 1.70 4.32 5.33 22.15 22.55 19.30 22.60 3.00 3.51 13.10 13.30 13.10 13.30 0.178 REF 0.254 REF 0.381 REF STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE CASE 465B - 03 ISSUE B NI - 880 MRF5S19130R3 B NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M−1994. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. 1 B (FLANGE) K DIM A B C D E F H K M N R S aaa bbb ccc 2 bbb M D T A M B M bbb M T A M B M T A M B R (INSULATOR) ccc M N ccc M M T A M M B S (LID) aaa M T A M B (LID) M (INSULATOR) M H C T A A (FLANGE) MOTOROLA RF DEVICE DATA SEATING PLANE MILLIMETERS MIN MAX 22.99 23.24 13.60 13.80 3.73 5.08 12.57 12.83 0.89 1.14 0.08 0.15 1.45 1.70 4.32 5.33 22.15 22.55 19.30 22.60 13.10 13.30 13.10 13.30 0.178 REF 0.254 REF 0.381 REF STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE F E INCHES MIN MAX 0.905 0.915 0.535 0.545 0.147 0.200 0.495 0.505 0.035 0.045 0.003 0.006 0.057 0.067 0.170 0.210 0.872 0.888 0.871 0.889 0.515 0.525 0.515 0.525 0.007 REF 0.010 REF 0.015 REF CASE 465C - 02 ISSUE A NI - 880S MRF5S19130SR3 MRF5S19130R3 MRF5S19130SR3 11 For More Information On This Product, Go to: www.freescale.com ARCHIVE INFORMATION 3 K Information in this document is provided solely to enable system and software implementers to use Motorola products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters that may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals”, must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. MOTOROLA and the Stylized M Logo are registered in the US Patent and Trademark Office. All other product or service names are the property of their respective owners. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. E Motorola Inc. 2003 HOW TO REACH US: JAPAN: Motorola Japan Ltd.; SPS, Technical Information Center, 3-20-1, Minami-Azabu, Minato-ku, Tokyo 106-8573, Japan 81-3-3440-3569 USA /EUROPE /LOCATIONS NOT LISTED: Motorola Literature Distribution P.O. Box 5405, Denver, Colorado 80217 1-800-521-6274 or 480-768-2130 ASIA /PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Centre, 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong 852-26668334 HOME PAGE: http://motorola.com/semiconductors MRF5S19130R3 MRF5S19130SR3 MOTOROLA RF DEVICE DATA More Information On This Product, For For More Information On This Product, 12 Go to: www.freescale.com ◊ Go to: www.freescale.com MRF5S19130/D ARCHIVE INFORMATION Freescale Semiconductor, Inc. ARCHIVE INFORMATION Freescale Semiconductor, Inc.