BZX84B4V7LT1, BZX84C2V4LT1 Series Zener Voltage Regulators 225 mW SOT−23 Surface Mount This series of Zener diodes is offered in the convenient, surface mount plastic SOT−23 package. These devices are designed to provide voltage regulation with minimum space requirement. They are well suited for applications such as cellular phones, hand held portables, and high density PC boards. http://onsemi.com 3 Cathode Features • • • • • • • Pb−Free Packages are Available 225 mW Rating on FR−4 or FR−5 Board Zener Breakdown Voltage Range − 2.4 V to 75 V Package Designed for Optimal Automated Board Assembly Small Package Size for High Density Applications ESD Rating of Class 3 (>16 KV) per Human Body Model Tight Tolerance Series Available (See Page 4) 1 Anode 3 SOT−23 CASE 318 STYLE 8 1 2 MARKING DIAGRAM Mechanical Characteristics CASE: Void-free, transfer-molded, thermosetting plastic case FINISH: Corrosion resistant finish, easily Solderable MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES: xxxM 260°C for 10 Seconds POLARITY: Cathode indicated by polarity band FLAMMABILITY RATING: UL 94 V−0 xxx = Specific Device Code M =Month Code ORDERING INFORMATION MAXIMUM RATINGS Rating Symbol Total Power Dissipation on FR−5 Board, (Note 1) @ TA = 25°C 25 C Derated above 25°C Thermal Resistance, Junction−to−Ambient PD Total Power Dissipation on Alumina Substrate, (Note 2) @ TA = 25°C 25 C Derated above 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature Range RJA Max Unit 225 1.8 556 mW mW/°C °C/W TJ, Tstg Shipping† SOT−23 3000/Tape & Reel SOT−23 (Pb−Free) 3000/Tape & Reel BZX84CxxxLT3 SOT−23 10,000/Tape & Reel SOT−23 3000/Tape & Reel SOT−23 (Pb−Free) 3000/Tape & Reel SOT−23 10,000/Tape & Reel BZX84CxxxLT1 PD RJA Package Device* BZX84CxxxLT1G 300 2.4 417 mW mW/°C °C/W BZX84BxxxLT1 −65 to +150 °C BZX84BxxxLT3 Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. FR−5 = 1.0 X 0.75 X 0.62 in. 2. Alumina = 0.4 X 0.3 X 0.024 in., 99.5% alumina. BZX84BxxxLT1G *The “T1” suffix refers to an 8 mm, 7 inch reel. The “T3” suffix refers to an 8 mm, 13 inch reel. †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. DEVICE MARKING INFORMATION See specific marking information in the device marking column of the Electrical Characteristics table on page 3 of this data sheet. Semiconductor Components Industries, LLC, 2004 December, 2004 − Rev. 8 1 Publication Order Number: BZX84C2V4LT1/D BZX84B4V7LT1, BZX84C2V4LT1 Series ELECTRICAL CHARACTERISTICS I (Pinout: 1-Anode, 2-No Connection, 3-Cathode) (TA = 25°C unless otherwise noted, VF = 0.95 V Max. @ IF = 10 mA) Parameter Symbol VZ Reverse Zener Voltage @ IZT IZT Reverse Current ZZT Maximum Zener Impedance @ IZT IR Reverse Leakage Current @ VR VR Reverse Voltage IF Forward Current VF Forward Voltage @ IF VZ C IF VZ VR IR VF IZT Maximum Temperature Coefficient of VZ Zener Voltage Regulator Max. Capacitance @ VR = 0 and f = 1 MHz http://onsemi.com 2 V BZX84B4V7LT1, BZX84C2V4LT1 Series ELECTRICAL CHARACTERISTICS − BZX84CxxxLT1 SERIES (STANDARD TOLERANCE) (Pinout: 1-Anode, 2-No Connection, 3-Cathode) (TA = 25°C unless otherwise noted, VF = 0.90 V Max. @ IF = 10 mA) (Devices listed in bold, italic are ON Semiconductor Preferred devices.) VZ1 (Volts) @ IZT1 = 5 mA (Note 3) Device Marking Min Nom Max ZZT1 () @ IZT1 = 5 mA BZX84C2V4LT1, G* Z11 2.2 2.4 2.6 BZX84C2V7LT1, G* Z12 2.5 2.7 2.9 BZX84C3V0LT1 Z13 2.8 3 BZX84C3V3LT1, G* Z14 3.1 BZX84C3V6LT1, G* Z15 3.4 BZX84C3V9LT1, G* Z16 BZX84C4V3LT1, G* BZX84C4V7LT1 VZ2 (V) @ IZT2 = 1 mA (Note 3) Min Max ZZT2 () @ IZT2 = 1 mA 100 1.7 2.1 100 1.9 2.4 3.2 95 2.1 3.3 3.5 95 3.6 3.8 90 3.7 3.9 4.1 W9 4 4.3 Z1 4.4 4.7 BZX84C5V1LT1 Z2 4.8 5.1 BZX84C5V6LT1 Z3 5.2 BZX84C6V2LT1 Z4 5.8 BZX84C6V8LT1 Z5 BZX84C7V5LT1 Z6 BZX84C8V2LT1 VZ3 (V) @ IZT3 = 20 mA (Note 3) Min Max ZZT3 () @ IZT3 = 20 mA 600 2.6 3.2 50 600 3 3.6 50 2.7 600 3.3 3.9 2.3 2.9 600 3.6 2.7 3.3 600 3.9 90 2.9 3.5 600 4.6 90 3.3 4 5 80 3.7 4.7 5.4 60 4.2 5.6 6 40 6.2 6.6 10 6.4 6.8 7.2 7 7.5 7.9 Z7 7.7 8.2 BZX84C9V1LT1 Z8 8.5 BZX84C10LT1, G* Z9 9.4 BZX84C11LT1, G* Y1 BZX84C12LT1, G* BZX84C13LT1, G* Max Reverse Leakage Current VZ (mV/k) @ IZT1 = 5 mA VR Volts Min Max C (pF) @ VR = 0 f = 1 MHz 50 1 −3.5 0 450 20 1 −3.5 0 450 50 10 1 −3.5 0 450 4.2 40 5 1 −3.5 0 450 4.5 40 5 1 −3.5 0 450 4.1 4.7 30 3 1 −3.5 −2.5 450 600 4.4 5.1 30 3 1 −3.5 0 450 500 4.5 5.4 15 3 2 −3.5 0.2 260 5.3 480 5 5.9 15 2 2 −2.7 1.2 225 4.8 6 400 5.2 6.3 10 1 2 −2.0 2.5 200 5.6 6.6 150 5.8 6.8 6 3 4 0.4 3.7 185 15 6.3 7.2 80 6.4 7.4 6 2 4 1.2 4.5 155 15 6.9 7.9 80 7 8 6 1 5 2.5 5.3 140 8.7 15 7.6 8.7 80 7.7 8.8 6 0.7 5 3.2 6.2 135 9.1 9.6 15 8.4 9.6 100 8.5 9.7 8 0.5 6 3.8 7.0 130 10 10.6 20 9.3 10.6 150 9.4 10.7 10 0.2 7 4.5 8.0 130 10.4 11 11.6 20 10.2 11.6 150 10.4 11.8 10 0.1 8 5.4 9.0 130 Y2 11.4 12 12.7 25 11.2 12.7 150 11.4 12.9 10 0.1 8 6.0 10.0 130 Y3 12.4 13 14.1 30 12.3 14 170 12.5 14.2 15 0.1 8 7.0 11.0 120 BZX84C15LT1 Y4 14.3 15 15.8 30 13.7 15.5 200 13.9 15.7 20 0.05 10.5 9.2 13.0 110 BZX84C16LT1, G* Y5 15.3 16 17.1 40 15.2 17 200 15.4 17.2 20 0.05 11.2 10.4 14.0 105 BZX84C18LT1 Y6 16.8 18 19.1 45 16.7 19 225 16.9 19.2 20 0.05 12.6 12.4 16.0 100 BZX84C20LT1, G* Y7 18.8 20 21.2 55 18.7 21.1 225 18.9 21.4 20 0.05 14 14.4 18.0 85 BZX84C22LT1, G* Y8 20.8 22 23.3 55 20.7 23.2 250 20.9 23.4 25 0.05 15.4 16.4 20.0 85 BZX84C24LT1 Y9 22.8 24 25.6 70 22.7 25.5 250 22.9 25.7 25 0.05 16.8 18.4 22.0 80 Device VZ1 Below @ IZT1 = 2 mA VZ2 Below @ IZT2 = 0.1 m A VZ3 Below @ IZT3 = 10 mA Device Marking Min Nom Max ZZT1 Below @ IZT1 = 2 mA Min Max ZZT2 Below @ IZT4 = 0.5 mA Min Max ZZT3 Below @ IZT3 = 10 mA BZX84C27LT1, G* Y10 25.1 27 28.9 80 25 28.9 300 25.2 29.3 45 BZX84C30LT1 Y11 28 30 32 80 27.8 32 300 28.1 32.4 BZX84C33LT1, G* Y12 31 33 35 80 30.8 35 325 31.1 BZX84C36LT1 Y13 34 36 38 90 33.8 38 350 34.1 BZX84C39LT1, G* Y14 37 39 41 130 36.7 41 350 BZX84C43LT1, G* Y15 40 43 46 150 39.7 46 BZX84C47LT1, G* Y16 44 47 50 170 43.7 50 BZX84C51LT1 Y17 48 51 54 180 47.6 BZX84C56LT1, G* Y18 52 56 60 200 51.5 BZX84C62LT1 Y19 58 62 66 215 BZX84C68LT1, G* Y20 64 68 72 BZX84C75LT1, G* Y21 70 75 79 Device IR A @ Max Reverse Leakage Current VZ (mV/k) Below @ IZT1 = 2 mA VR (V) Min Max C (pF) @ VR = 0 f = 1 MHz 0.05 18.9 21.4 25.3 70 50 0.05 21 24.4 29.4 70 35.4 55 0.05 23.1 27.4 33.4 70 38.4 60 0.05 25.2 30.4 37.4 70 37.1 41.5 70 0.05 27.3 33.4 41.2 45 375 40.1 46.5 80 0.05 30.1 37.6 46.6 40 375 44.1 50.5 90 0.05 32.9 42.0 51.8 40 54 400 48.1 54.6 100 0.05 35.7 46.6 57.2 40 60 425 52.1 60.8 110 0.05 39.2 52.2 63.8 40 57.4 66 450 58.2 67 120 0.05 43.4 58.8 71.6 35 240 63.4 72 475 64.2 73.2 130 0.05 47.6 65.6 79.8 35 255 69.4 79 500 70.3 80.2 140 0.05 52.5 73.4 88.6 35 3. Zener voltage is measured with a pulse test current IZ at an ambient temperature of 25°C. * The “G” suffix indicates Pb−Free package available. http://onsemi.com 3 IR A @ BZX84B4V7LT1, BZX84C2V4LT1 Series ELECTRICAL CHARACTERISTICS − BZX84BxxxL (Tight Tolerance Series) (Pinout: 1-Anode, 2-No Connection, 3-Cathode) (TA = 25°C unless otherwise noted, VF = 0.90 V Max. @ IF = 10 mA) VZ (Volts) @ IZT = 5 mA (Note 4) IR A VZ (mV/k) @ IZT = 5 mA Volts Min Max C (pF) @ VR =0, =0 f = 1 MHz 3 2 −3.5 0.2 260 2 2 −2.7 1.2 225 40 1 2 −2 2.5 200 6.32 10 3 4 0.4 3.7 185 6.94 15 2 4 1.2 4.5 155 7.5 7.65 15 1 5 2.5 5.3 140 8.04 8.2 8.36 15 0.7 5 3.2 6.2 135 8.92 9.1 9.28 15 0.5 6 3.8 7 130 T19 15.7 16 16.3 40 0.05 11.2 10.4 14 105 T20 17.6 18 18.4 45 0.05 12.6 12.4 16 100 Device Marking Min Nom Max Max BZX84B4V7LT1 T10 4.61 4.7 4.79 80 BZX84B5V1LT1, G* T11 5.00 5.1 5.20 60 BZX84B5V6LT1 T12 5.49 5.6 5.71 BZX84B6V2LT1, G* T13 6.08 6.2 BZX84B6V8LT1, G* T14 6.66 6.8 BZX84B7V5LT1, G* T15 7.35 BZX84B8V2LT1, G* T16 BZX84B9V1LT1, G* T17 BZX84B16LT1 BZX84B18LT1 Device Max Reverse Leakage Current ZZT () @ IZT = 5 mA (Note 4) VR @ 4. Zener voltage is measured with a pulse test current IZ at an ambient temperature of 25°C. * The “G” suffix indicates Pb−Free package available. http://onsemi.com 4 BZX84B4V7LT1, BZX84C2V4LT1 Series 8 100 7 θ VZ, TEMPERATURE COEFFICIENT (mV/°C) θ VZ, TEMPERATURE COEFFICIENT (mV/°C) TYPICAL CHARACTERISTICS TYPICAL TC VALUES 6 5 4 VZ @ IZT 3 2 1 0 −1 −2 −3 2 3 4 5 6 7 8 9 10 VZ, NOMINAL ZENER VOLTAGE (V) 11 12 TYPICAL TC VALUES VZ @ IZT 10 1 10 100 VZ, NOMINAL ZENER VOLTAGE (V) Figure 1. Temperature Coefficients (Temperature Range − 55°C to +150°C) Figure 2. Temperature Coefficients (Temperature Range − 55°C to +150°C) 1000 IZ = 1 mA 100 TJ = 25°C IZ(AC) = 0.1 IZ(DC) f = 1 kHz IF, FORWARD CURRENT (mA) Z ZT, DYNAMIC IMPEDANCE (Ω ) 1000 75 V (MMBZ5267BLT1) 91 V (MMBZ5270BLT1) 100 5 mA 20 mA 10 10 150°C 1 1 10 VZ, NOMINAL ZENER VOLTAGE 100 1 0.4 Figure 3. Effect of Zener Voltage on Zener Impedance 0.5 75°C 25°C 0.6 0°C 0.7 0.8 0.9 1.0 VF, FORWARD VOLTAGE (V) Figure 4. Typical Forward Voltage http://onsemi.com 5 1.1 1.2 BZX84B4V7LT1, BZX84C2V4LT1 Series TYPICAL CHARACTERISTICS 1000 1000 C, CAPACITANCE (pF) 0 V BIAS 1 V BIAS I R , LEAKAGE CURRENT (µA) TA = 25°C 100 BIAS AT 50% OF VZ NOM 10 1 1 10 VZ, NOMINAL ZENER VOLTAGE (V) 100 100 10 1 +150°C 0.1 0.01 0.001 +25 °C 0.0001 −55 °C 0.00001 0 10 Figure 5. Typical Capacitance 100 TA = 25°C 10 1 0.1 0.01 0 2 4 6 8 VZ, ZENER VOLTAGE (V) 30 40 50 60 70 VZ, NOMINAL ZENER VOLTAGE (V) 80 Figure 6. Typical Leakage Current I Z , ZENER CURRENT (mA) I Z , ZENER CURRENT (mA) 100 20 10 10 1 0.1 0.01 12 TA = 25°C 10 30 50 70 VZ, ZENER VOLTAGE (V) 90 Figure 8. Zener Voltage versus Zener Current (12 V to 91 V) Figure 7. Zener Voltage versus Zener Current (VZ Up to 12 V) http://onsemi.com 6 90 BZX84B4V7LT1, BZX84C2V4LT1 Series PACKAGE DIMENSIONS SOT−23 TO−236AB CASE 318−09 ISSUE AK A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318−01 THRU −07 AND −09 OBSOLETE, NEW STANDARD 318−08. L 3 1 V B S 2 G DIM A B C D G H J K L S V C D H J K INCHES MIN MAX 0.1102 0.1197 0.0472 0.0551 0.0350 0.0440 0.0150 0.0200 0.0701 0.0807 0.0005 0.0040 0.0034 0.0070 0.0140 0.0285 0.0350 0.0401 0.0830 0.1039 0.0177 0.0236 SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 0.8 0.031 SCALE 10:1 mm inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 7 MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.89 1.11 0.37 0.50 1.78 2.04 0.013 0.100 0.085 0.177 0.35 0.69 0.89 1.02 2.10 2.64 0.45 0.60 BZX84B4V7LT1, BZX84C2V4LT1 Series ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 61312, Phoenix, Arizona 85082−1312 USA Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada Email: [email protected] N. American Technical Support: 800−282−9855 Toll Free USA/Canada ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder Japan: ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Phone: 81−3−5773−3850 http://onsemi.com 8 For additional information, please contact your local Sales Representative. BZX84C2V4LT1/D