DATA SHEET THYRISTORS AC08DSMA,AC08FSMA 8 A RESIN INSULATION TYPE TRIAC DESCRIPTION PACKAGE DRAWING (Unit: mm) The AC08DSMA and AC08FSMA are resin insulation type 4.7 MAX. 10.5 MAX. TRIACs with an effective current of 8 A (TC = 88°C). 7 ±0.2 φ 3.2 ±0.2 2.8 ±0.2 1 These products features ratings and electrical characteristics 2 3 5 ±0.2 equal to TO-220AB package TRIAC and a high reliability design. FEATURES • Insulation type TRIAC fully covered with resin on the entire case other than electrode leads • Insulation voltage and conduction equal to conventional mica 12 ±0.2 mounting. 0.8 ±0.1 1.3 ±0.2 1.5 ±0.2 2.54 TYP. 2.54 TYP. and polyester film 0.5 ±0.1 2.5 ±0.1 TRIAC 1: T1 2: T2 3: Gate • Can be replaced with TO-220AB package • High allowable on-current when using a single unit *: TC test bench-mark APPLICATIONS * 13.5 MIN. mounting on a heatsink board or performing high-density 17 ±0.2 and are electrically insulated with electrodes, giving them a considerable advantage over conventional TRIACs when 3.0 MAX. 5 ±0.1 These products are covered with resin mold on the entire case Standard weight: 2 g Non-contact switches of motor speed control, heater temperature control, lamp light control The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. D10613EJ5V0DS00 (5th edition) Date Published June 2004 NS CP(K) Printed in Japan The mark shows major revised points. 2002 AC08DSMA,AC08FSMA MAXIMUM RATINGS Parameter Symbol AC08DSMA AC08FSMA Unit Remarks Non-repetitive Peak Off-state Voltage VDSM 500 700 V − Repetitive Peak Off-state Voltage VDRM 400 600 V − Effective On-state Current IT(RMS) 8 (TC = 88°C) A Refer to Figure 11 and 12. ITSM 80 (50 Hz 1 cycle) A Refer to Figure 2. Surge On-state Current 88 (60 Hz 1 cycle) Fusing Current ∫ iT2dt 28 (1 ms ≤ t ≤ 10 ms) As 2 − Critical Rate Rise of On-state Current dIT/dt 50 A/µs − PGM 5.0 (f ≥ 50 Hz, Duty ≤ 10%) W − PG(AV) 0.5 W − Peak Gate Current IGM ±3 (f ≥ 50 Hz, Duty ≤ 10%) A − Junction Temperature Tj −40~+125 °C − Storage Temperature Tstg −55~+150 °C − Peak Gate Power Dissipation Average Gate Power Dissipation ELECTRICAL CHARACTERISTICS (Tj = 25°C) Parameter Symbol Repetitive Peak Off-state Current On-state Voltage IDRM VTM Gate Trigger Current VDM = VDRM TYP. MAX. Unit Remarks Tj = 25°C − − 100 µA − Tj = 125°C − − 2 mA − − − 1.6 V Refer to Figure 1. mA Refer to Figure 4. V Refer to Figure 4. ITM = 10 A T2+, G+ − − 20 RL = 30 Ω T2−, G+ − − − III T2−, G− − − 20 IV T2+, G− − − 20 VDM = 12 V, T2+, G+ − − 1.5 RL = 30 Ω T2−, G+ − − − T2−, G− − − 1.5 IGT Mode I VGT II III IV Gate Non-trigger Voltage Holding Current VGD IH Critical Rate Rise of Off-state Voltage Commutating Critical Rate Rise of dv/dt T2+, G− Tj = 125°C, VDM = 1 VDRM 2 − − 1.5 0.3 − − V − − 30 − mA − − 100 − V/µs − 10 − − V/µs − − − 3.7 VDM = 24 V, ITM = 10 A Tj = 125°C, VDM 2 = 3 VDRM (dv/dt)c Tj = 125°C, (diT/dt)c = −4 A/ms, VD = 400 V Off-state Voltage Thermal Resistance MIN. VDM = 12 V, Mode I II Gate Trigger Voltage Conditions Note Rth(j-c) Junction-to-case AC °C/W Refer to Figure 13. Note The thermal resistance with a 50 Hz or 60 Hz sine wave current, as shown in the following expression: Rth(j-c) = Tj (max) − TC PT ( AV ) Tj(max): Maximum junction temperature TC: Case temperature PT(AV): Average on-dissipation 2 Data Sheet D10613EJ5V0DS AC08DSMA,AC08FSMA TYPICAL CHARACTERISTICS Figure 1. iT vs. νT CHARACTERISTIC Figure 2. ITSM RATING MAX. Initial Tj = 125˚C 140 ITSM - Surge On-state Current - A iT - On-state Current - A 100 10 TC = 125˚C 25˚C 1.0 0.1 ITSM 0 120 100 60 Hz 80 50 Hz 60 40 20 1 2 3 4 5 1 5 νT - On-state Voltage - V VGT - Gate Trigger Voltage - V VG - Gate Voltage - V 8 6 PGM = 5 W f ≥ 50 Hz Duty ≤ 10% PG(AV) = 0.5 W 1.0 1.5 2.0 2.5 TA = −40˚C 25˚C 125˚C 1 0.5 0 3.0 0 10 IG - Gate Current - A 10 40 80 40 Mode I, III, IV 1.4 VGT - Gate Trigger Voltage - V IGT - Gate Trigger Current - mA 100 0 30 Figure 6. VGT vs. TA CHARACTERISTIC Mode I, III, IV −40 20 IGT - Gate Trigger Current - mA Figure 5. IGT vs. TA CHARACTERISTIC 1000 1 100 Mode I, III, IV 1.5 0 0.5 50 Figure 4. GATE CHARACTERISTIC 2.0 Tj = −40 to +125˚C 4 10 Cycles - N Figure 3. GATE RATING 10 0 2π 0 0 2 π N=1 1.2 1.0 0.8 0.6 0.4 0.2 120 TA - Ambient Temperature - °C 0 −40 0 40 80 120 TA - Ambient Temperature - °C Data Sheet D10613EJ5V0DS 3 AC08DSMA,AC08FSMA Figure 7. iGT vs. τ CHARACTERISTIC Figure 8. νGT vs. τ CHARACTERISTIC Mode I, III, IV TA = 25˚C 1000 100 10 5 νGT - Gate Trigger Voltage - V iGT - Gate Trigger Current - mA 10000 1 1 10 100 Mode I, III, IV TA = 25˚C 4 3 2 1 0 1000 1 10 τ - Pulse Width - µs Figure 10. PT(AV) vs. IT(RMS) CHARACTERISTIC IH - Holding Current - mA 100 10 0 20 40 60 80 100 120 TA - Ambient Temperature - °C PT(AV) - On-state Average Power Dissipation - W Figure 9. IH vs. TA CHARACTERISTIC −20 12 11 10 9 8 7 6 5 4 3 2 1 0 0 1 3 4 5 6 7 8 9 10 11 12 Figure 12. TA vs. IT(RMS) RATING 140 TA - Ambient Temperature - °C 140 TC - Case Temperature - °C 2 IT(RMS) - Effective On-state Current - A Figure 11. TC vs. IT(RMS) RATING 120 100 80 60 40 20 120 100 80 60 40 20 0 0 0 1 2 3 4 5 6 7 8 9 10 11 12 IT(RMS) - Effective On-state Current - A 4 1000 τ - Pulse Width - µs 1000 1 100 0 1.0 2.0 IT(RMS) - Effective On-state Current - A Data Sheet D10613EJ5V0DS AC08DSMA,AC08FSMA Figure 13. Zth CHARACTERISTIC Zth - Transient Thermal Impedance - °C/W 100 Junction to ambient 10 Junction to case 1 0.1 0.1 1 10 100 1k 10 k 100 k Cycles (50 Hz) Data Sheet D10613EJ5V0DS 5 AC08DSMA,AC08FSMA • The information in this document is current as of June, 2004. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or types are available in every country. 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