IRF640N
IRF640NS
IRF640NL
l
l
l
l
l
l
l
TO-220AB
IRF640N
Advanced Process Technology
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Ease of Paralleling
Simple Drive Requirements
D2Pak
IRF640NS
TO-262
IRF640NL
Description
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation levels
to approximately 50 watts. The low thermal resistance and
low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible onresistance in any existing surface mount package. The
D2Pak is suitable for high current applications because of its
low internal connection resistance and can dissipate up to
2.0W in a typical surface mount application.
The through-hole version (IRF640NL) is available for lowprofile application.
D
VDSS = 200V
RDS(on) = 0.15Ω
G
ID = 18A
S
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
2014-8-27
Max.
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
Units
18
13
72
150
1.0
± 20
247
18
15
8.1
-55 to +175
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
300 (1.6mm from case )
10 lbf•in (1.1N•m)
1
www.kersemi.com
IRF640N/S/L
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
RDS(on)
VGS(th)
gfs
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Min.
200
–––
–––
2.0
6.8
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.25
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
10
19
23
5.5
IDSS
Drain-to-Source Leakage Current
LD
Internal Drain Inductance
–––
4.5
LS
Internal Source Inductance
–––
7.5
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
–––
–––
–––
1160
185
53
V(BR)DSS
∆V(BR)DSS/∆TJ
IGSS
Max. Units
Conditions
–––
V
VGS = 0V, ID = 250µA
––– V/°C Reference to 25°C, ID = 1mA
0.15
Ω
VGS = 10V, ID = 11A
4.0
V
VDS = VGS, ID = 250µA
–––
S
VDS = 50V, ID = 11A
25
VDS = 200V, VGS = 0V
µA
250
VDS = 160V, VGS = 0V, TJ = 150°C
100
VGS = 20V
nA
-100
VGS = -20V
67
ID = 11A
11
nC VDS = 160V
33
VGS = 10V, See Fig. 6 and 13
–––
VDD = 100V
–––
ID = 11A
ns
–––
RG = 2.5Ω
–––
RD = 9.0Ω, See Fig. 10
D
Between lead,
–––
6mm (0.25in.)
nH
G
from package
–––
and center of die contact
S
–––
VGS = 0V
–––
VDS = 25V
–––
pF
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
IS
ISM
VSD
trr
Qrr
ton
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
D
MOSFET symbol
––– ––– 18
showing the
A
G
integral reverse
72
––– –––
S
p-n junction diode.
––– ––– 1.3
V
TJ = 25°C, IS = 11A, VGS = 0V
––– 167 251
ns
TJ = 25°C, IF = 11A
––– 929 1394 nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Thermal Resistance
RθJC
RθCS
RθJA
RθJA
2014-8-27
Parameter
Typ.
Max.
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Junction-to-Ambient (PCB mount)
–––
0.50
–––
–––
1.0
–––
62
40
2
Units
°C/W
www.kersemi.com
IRF640N/S/L
100
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
TOP
10
1
I D , Drain-to-Source Current (A)
I D , Drain-to-Source Current (A)
100
4.5V
0.1
20µs PULSE WIDTH
TJ = 25 °C
0.01
0.1
1
10
10
4.5V
1
RDS(on) , Drain-to-Source On Resistance
(Normalized)
I D , Drain-to-Source Current (A)
TJ = 175 ° C
10
TJ = 25 ° C
1
V DS = 50V
20µs PULSE WIDTH
7.0
8.0
9.0
10.0
100
3.5
ID = 18A
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-60 -40 -20 0
VGS = 10V
20 40 60 80 100 120 140 160 180
TJ , Junction Temperature( ° C)
VGS , Gate-to-Source Voltage (V)
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 3. Typical Transfer Characteristics
2014-8-27
10
Fig 2. Typical Output Characteristics
100
6.0
1
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
5.0
20µs PULSE WIDTH
TJ = 175°C
0.1
0.1
100
VDS , Drain-to-Source Voltage (V)
0.1
4.0
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
TOP
3
www.kersemi.com
IRF640N/S/L
2500
VGS , Gate-to-Source Voltage (V)
2000
C, Capacitance(pF)
20
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
1500
Ciss
1000
Coss
500
Crss
0
V DS= 160V
V DS= 100V
V DS= 40V
16
12
8
4
0
1
10
100
0
1000
20
40
60
80
QG , Total Gate Charge (nC)
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
100
OPERATION IN THIS AREA LIMITED
BY RDS(on)
ID , Drain Current (A)
ISD , Reverse Drain Current (A)
ID = 11A
100
TJ = 175 ° C
10
TJ = 25 ° C
1
10us
100us
10
1ms
10ms
1
0.1
0.2
TC = 25 °C
TJ = 175 °C
Single Pulse
V GS = 0 V
0.4
0.6
0.8
1.0
1.2
1.4
0.1
0.1
1.6
VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
2014-8-27
1
10
100
1000
VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
4
www.kersemi.com
IRF640N/S/L
RD
VDS
20
20
VGS
ID , Drain Current (A)
ID , Drain Current (A)
D.U.T.
RG
16
16
+
V
DD
-
10V
12
12
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
8
Fig 10a. Switching Time Test Circuit
8
VDS
4
90%
4
0
0
25
25
50
50
75
100
125
150
125
° C)
TC 75
, Case100
Temperature
(150
TC , Case Temperature ( ° C)
175
175
10%
VGS
td(on)
Fig 9. Maximum Drain Current Vs.
Case Temperature
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
Thermal Response(Z thJC )
10
1
D = 0.50
0.20
PDM
0.10
0.1
t1
0.05
0.02
0.01
0.01
0.00001
t2
SINGLE PULSE
(THERMAL RESPONSE)
0.0001
Notes:
1. Duty factor D = t 1 / t 2
2. Peak TJ = P DM x ZthJC + TC
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
2014-8-27
5
www.kersemi.com
EAS , Single Pulse Avalanche Energy (mJ)
IRF640N/S/L
15V
L
VDS
D R IV E R
D .U .T
RG
+
- VD D
IA S
20V
A
0 .0 1 Ω
tp
Fig 12a. Unclamped Inductive Test Circuit
V (B R )D S S
tp
600
ID
4.4A
7.6A
BOTTOM 11A
TOP
500
400
300
200
100
0
25
50
75
100
125
150
175
Starting TJ , Junction Temperature ( ° C)
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
IAS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
50KΩ
12V
QG
.2µF
.3µF
10 V
QGS
D.U.T.
QGD
+
V
- DS
VGS
VG
3mA
IG
Charge
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
2014-8-27
ID
Current Sampling Resistors
6
www.kersemi.com
IRF640N/S/L
Peak Diode Recovery dv/dt Test Circuit
+
D.U.T
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
+
-
-
+
•
•
•
•
RG
Driver Gate Drive
P.W.
+
dv/dt controlled by RG
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
D=
Period
-
VDD
P.W.
Period
VGS=10V
*
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
VDD
Forward Drop
Inductor Curent
ISD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 14. For N-Channel HEXFET® Power MOSFETs
2014-8-27
7
www.kersemi.com
IRF640N/S/L
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
2 .87 (.11 3 )
2 .62 (.10 3 )
10.5 4 (.4 15 )
10.2 9 (.4 05 )
-B-
3 .78 (.14 9 )
3 .54 (.13 9 )
4 .69 (.1 85 )
4 .20 (.1 65 )
-A -
1 .3 2 (.05 2 )
1 .2 2 (.04 8 )
6.4 7 (.255 )
6.1 0 (.240 )
4
15 .24 (.6 00 )
14 .84 (.5 84 )
1.1 5 (.0 45)
M IN
1
2
L E A D A S S IG N M E NT S
1 - G A TE
2 - D R A IN
3 - SOURCE
4 - D R A IN
3
14 .09 (.5 55 )
13 .47 (.5 30 )
4 .0 6 (.16 0 )
3 .5 5 (.14 0 )
3X
1.4 0 (.0 55 )
3X
1.1 5 (.0 45 )
0 .93 (.03 7 )
0 .69 (.02 7 )
0 .3 6 (.0 1 4)
3X
M
B A M
0.5 5 (.0 22)
0.4 6 (.0 18)
2 .92 (.11 5 )
2 .64 (.10 4 )
2 .5 4 (.1 00)
2X
N O TE S :
1 D IM E N S IO N IN G & TO L E R A NC ING P E R A N S I Y 14 .5 M , 1 982 .
3 O UTL IN E C O NF O R M S TO J E DE C O UT L IN E TO -22 0 A B .
2 C O N TR O L LING D IM E N S IO N : INC H
4 H E A TS IN K & LE A D M E A S U R E M E N T S D O N O T IN C L U D E B U R R S .
TO-220AB Part Marking Information
E X A M P L E : TH IS IS A N IR F 1 0 1 0
W ITH A S S E M B L Y
L O T C O D E 9 B 1M
A
PART NUMBER
LOGO
IR F 1 0 10
9 24 6
9B
1M
ASSEMBLY
LOT CODE
2014-8-27
8
D A TE C O D E
(Y Y W W )
YY = YEAR
W W = W EEK
www.kersemi.com
IRF640N/S/L
D2Pak Package Outline
10.54 (.415)
10.29 (.405)
1.40 (.055)
M A X.
-A-
1.32 (.052)
1.22 (.048)
2
1.78 (.070)
1.27 (.050)
1
10.16 (.400)
REF.
-B-
4.69 (.185)
4.20 (.165)
6.47 (.255)
6.18 (.243)
15.49 (.610)
14.73 (.580)
3
2.79 (.110)
2.29 (.090)
2.61 (.103)
2.32 (.091)
5.28 (.208)
4.78 (.188)
3X
1.40 (.055)
1.14 (.045)
3X
5.08 (.200 )
0.55 (.022)
0.46 (.018)
0.93 (.037)
0.69 (.027)
0.25 (.010)
M
8.89 (.350)
REF.
1 .39 (.055)
1 .14 (.045)
B A M
M IN IM U M R E C O M M E N D E D F O O TP R IN T
11.43 (.4 50)
LE A D A S S IG N M E N TS
1 - G A TE
2 - D R A IN
3 - SOURCE
N O TE S :
1 D IM E N S IO N S A F T E R S O LD E R D IP .
2 D IM E N S IO N IN G & TO LE R A N C IN G P E R A N S I Y 14.5M , 1982.
3 C O N T R O LLIN G D IM E N S IO N : IN C H .
4 H E A TS IN K & LE A D D IM E N S IO N S D O N O T IN C LU D E B U R R S .
8.89 (.350)
17.78 (.700)
3.81 (.150)
2.08 (.082)
2X
2.54 (.100)
2X
D2Pak Part Marking Information
A
PART NUMBER
LOGO
F530S
9246
9B
1M
ASSEMBLY
LOT CODE
2014-8-27
9
D A TE C O D E
(Y Y W W )
YY = YEAR
W W = W EEK
www.kersemi.com
IRF640N/S/L
TO-262 Package Outline
TO-262 Part Marking Information
2014-8-27
10
www.kersemi.com
IRF640N/S/L
D2Pak Tape & Reel Information
TRR
1 .6 0 (.0 6 3 )
1 .5 0 (.0 5 9 )
4 .1 0 (.1 6 1 )
3 .9 0 (.1 5 3 )
F E E D D IR E C T IO N 1 .8 5 (.0 7 3 )
1.6 0 (.06 3 )
1.5 0 (.05 9 )
1 1.60 (.4 57 )
1 1.40 (.4 49 )
1 .6 5 (.0 6 5 )
0.3 68 (.014 5 )
0.3 42 (.013 5 )
2 4.30 (.95 7)
2 3.90 (.94 1)
1 5.42 (.6 09 )
1 5.22 (.6 01 )
TR L
1.75 (.069 )
1.25 (.049 )
10.90 (.42 9)
10.70 (.42 1)
4.7 2 (.1 36 )
4.5 2 (.1 78 )
16 .1 0 (.63 4 )
15 .9 0 (.62 6 )
F E E D D IR E C T IO N
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
33 0.00
(14.173)
M A X.
Notes:
60.00 (2.362)
M IN .
NOTES :
1. C O M F O R M S T O EIA -418.
2. C O N T R O LLIN G D IM EN S IO N : M ILLIM ET E R .
3. D IM E N S IO N M E A S U R E D @ H U B .
4. IN C LU D E S F LA N G E D IS T O R T IO N @ O U T E R E D G E .
Repetitive rating; pulse width limited by
max. junction temperature.
Starting TJ = 25°C, L = 4.2mH
26.40 (1.03 9)
24.40 (.961 )
3
30.40 (1.197)
M AX.
4
Pulse width ≤ 400µs; duty cycle ≤ 2%.
This is only applied to TO-220AB package
RG = 25Ω, IAS = 11A.
This is applied to D2Pak, when mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
ISD ≤ 11A, di/dt ≤ 344A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C
2014-8-27
11
www.kersemi.com