APTM50DDAM65T3G Dual Boost chopper MOSFET Power Module Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction 13 14 CR1 CR2 22 7 23 8 Features • Power MOS 7® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged • Kelvin source for easy drive • Very low stray inductance - Symmetrical design • Internal thermistor for temperature monitoring • High level of integration Q2 Q1 26 4 27 3 29 30 31 15 32 16 R1 28 27 26 25 23 22 Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Low profile • Each leg can be easily paralleled to achieve a single boost of twice the current capability • RoHS Compliant 20 19 18 29 16 30 15 31 14 32 13 2 3 4 7 8 VDSS = 500V RDSon = 65mΩ typ @ Tj = 25°C ID = 51A @ Tc = 25°C 10 11 12 All multiple inputs and outputs must be shorted together Example: 13/14 ; 29/30 ; 22/23 … ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Tc = 25°C Tc = 80°C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Max ratings 500 51 38 204 ±30 78 390 51 50 3000 Unit V A July, 2006 Symbol VDSS V mΩ W A mJ These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1–6 APTM50DDAM65T3G – Rev 1 Absolute maximum ratings APTM50DDAM65T3G All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Dynamic Characteristics Symbol Ciss Coss Crss Qg Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Qgs Gate – Source Charge Qgd Gate – Drain Charge Td(on) Turn-on Delay Time Tr Td(off) Rise Time Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Diode ratings and characteristics Test Conditions VGS = 0V,VDS = 500V VGS = 0V,VDS = 400V VGS = 10V, ID = 25.5A VGS = VDS, ID = 2.5mA VGS = ±30 V, VDS = 0V Maximum Reverse Leakage Current Typ 65 3 Test Conditions VGS = 0V VDS = 25V f = 1MHz Min VGS = 10V VBus = 250V ID = 51A Typ 7000 1400 90 140 Test Conditions Diode Forward Voltage IF = 80A trr Reverse Recovery Time Qrr Reverse Recovery Charge IF = 80A VR = 300V di/dt=4500A/µs www.microsemi.com mΩ V nA pF nC ns 75 93 1556 VF Unit 38 Inductive switching @ 125°C VGS = 15V, VBus = 333V ID = 51A, R G = 3Ω DC Forward Current Max µA 21 1035 IF Unit 70 Inductive switching @ 25°C VGS = 15V, VBus = 333V ID = 51A, R G = 3Ω VR=600V Max 100 500 78 5 ±100 40 Inductive switching @ 125°C VGS = 15V VBus = 333V ID = 51A R G = 3Ω Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM Min Tj = 25°C Tj = 125°C µJ 845 µJ 1013 Min 600 Typ Tj = 25°C Tj = 125°C Tc = 70°C Tj = 25°C Tj = 125°C 80 1.45 1.35 Tj = 25°C 95 Tj = 125°C 115 Tj = 25°C 5.2 Tj = 125°C 8 Max 350 600 Unit V µA A V ns July, 2006 IDSS Characteristic µC 2–6 APTM50DDAM65T3G – Rev 1 Symbol APTM50DDAM65T3G Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Min Transistor Diode Junction to Case Thermal Resistance RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight Typ To heatsink M4 2500 -40 -40 -40 2.5 RT = Min R 25 Unit °C/W V 150 125 100 4.7 110 Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol Characteristic R25 Resistance @ 25°C B 25/85 T25 = 298.15 K Max 0.32 0.8 Typ 50 3952 Max °C N.m g Unit kΩ K T: Thermistor temperature 1 1 RT : Thermistor value at T exp B 25 / 85 − T25 T 12 See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com www.microsemi.com 3–6 APTM50DDAM65T3G – Rev 1 28 17 1 July, 2006 SP3 Package outline (dimensions in mm) APTM50DDAM65T3G Typical Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.35 0.3 0.9 0.25 0.7 0.2 0.5 0.15 0.3 0.1 0.1 0.05 0.05 Single Pulse 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics ID, Drain Current (A) VGS=10&15V 160 7V 120 6.5V 80 6V 40 5.5V 0 0 100 5V 5 10 15 20 VDS, Drain to Source Voltage (V) 75 TJ=25°C 50 25 TJ=125°C TJ=-55°C 0 0 25 2 4 6 8 VGS, Gate to Source Voltage (V) DC Drain Current vs Case Temperature RDS(on) vs Drain Current 1.1 V DS > ID(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle 125 60 Normalized to VGS =10V @ 25.5A 1.05 ID, DC Drain Current (A) VGS=10V 1 VGS=20V 0.95 0.9 50 40 30 20 10 0 10 20 30 40 50 ID, Drain Current (A) 60 www.microsemi.com 25 50 75 100 125 TC, Case Temperature (°C) 150 July, 2006 0 4–6 APTM50DDAM65T3G – Rev 1 ID, Drain Current (A) 8V RDS(on) Drain to Source ON Resistance Transfert Characteristics 150 200 1.1 1.0 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 150 ON resistance vs Temperature 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 Threshold Voltage vs Temperature 25 50 75 100 125 150 Maximum Safe Operating Area 1000 1.2 1.1 I D, Drain Current (A) VGS(TH), Threshold Voltage (Normalized) 0 TJ, Junction Temperature (°C) TJ, Junction Temperature (°C) 1.0 0.9 0.8 0.7 100 us limited by RDSon 100 1 ms 10 10 ms Single pulse TJ =150°C TC=25°C 1 100 ms 0.1 0.6 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (°C) Ciss 10000 Coss 1000 Crss 100 10 10 20 30 40 VDS, Drain to Source Voltage (V) 10 100 1000 VDS, Drain to Source Voltage (V) Gate Charge vs Gate to Source Voltage 14 VDS=100V ID=51A TJ=25°C 12 VDS=250V 10 50 VDS=400V 8 6 4 2 0 0 25 50 75 100 125 150 175 Gate Charge (nC) July, 2006 0 1 VGS, Gate to Source Voltage (V) Capacitance vs Drain to Source Voltage 100000 C, Capacitance (pF) VGS=10V ID= 25.5A www.microsemi.com 5–6 APTM50DDAM65T3G – Rev 1 BVDSS, Drain to Source Breakdown Voltage (Normalized) Breakdown Voltage vs Temperature 1.2 RDS(on), Drain to Source ON resistance (Normalized) APTM50DDAM65T3G APTM50DDAM65T3G Rise and Fall times vs Current 160 70 140 td(off) V DS=333V RG =3Ω T J=125°C L=100µH 60 50 40 30 td(on) 100 80 tr 60 20 10 0 10 20 30 40 50 60 I D, Drain Current (A) 70 80 10 20 30 40 50 60 ID, Drain Current (A) 70 80 Switching Energy vs Gate Resistance Switching Energy vs Current 5 VDS=333V RG=3Ω TJ=125°C L=100µH 2.5 2 Switching Energy (mJ) 3 Eon 1.5 Eoff 1 0.5 V DS =333V ID=51A T J=125°C L=100µH 4 3 Eoff Eon 2 Eoff 1 0 0 10 20 30 40 50 60 70 0 80 5 10 15 20 25 30 35 40 45 I D, Drain Current (A) Gate Resistance (Ohms) Operating Frequency vs Drain Current 400 350 ZVS 300 250 I DR, Reverse Drain Current (A) 450 Frequency (kHz) tf 40 20 Switching Energy (mJ) VDS=333V RG=3Ω T J=125°C L=100µH 120 t r and tf (ns) td(on) and t d(off) (ns) Delay Times vs Current 80 VDS=333V D=50% RG=3Ω TJ=125°C TC=75°C 200 ZCS 150 100 hard switching 50 0 15 20 25 30 35 I D, Drain Current (A) 40 100 T J=150°C TJ=25°C 10 45 1 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 VSD, Source to Drain Voltage (V) Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 6–6 APTM50DDAM65T3G – Rev 1 July, 2006 10 Source to Drain Diode Forward Voltage 1000