Order this document by MCR25/D SEMICONDUCTOR TECHNICAL DATA *Motorola preferred devices Designed primarily for half–wave ac control applications, such as motor controls, heating controls, and power supplies; or wherever half–wave, silicon gate–controlled devices are needed. SCRs 25 AMPERES RMS 400 thru 800 VOLTS • Blocking Voltage to 800 Volts • On-State Current Rating of 25 Amperes RMS • High Surge Current Capability — 300 Amperes • Industry Standard TO–220AB Package for Ease of Design A • Glass Passivated Junctions for Reliability and Uniformity K A G CASE 221A–06 (TO-220AB) Style 3 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Peak Repetitive Off-State Voltage (1) Peak Repetitive Reverse Voltage (TJ = –40 to 125°C) Symbol Value VDRM VRRM MCR25D MCR25M MCR25N On-State RMS Current (All Conduction Angles) Peak Non-repetitive Surge Current (One Half Cycle, 60 Hz, TJ = 125°C) Circuit Fusing Consideration (t = 8.3 ms) Peak Gate Power (Pulse Width ≤ 1.0 µs, TC = 80°C) Average Gate Power (t = 8.3 ms, TC = 80°C) Peak Gate Current (Pulse Width ≤ 1.0 µs, TC = 80°C) Operating Junction Temperature Range Storage Temperature Range Unit Volts 400 600 800 IT(RMS) 25 A ITSM 300 A I2t 373 A2sec PGM 20.0 Watts PG(AV) 0.5 Watts IGM 2.0 A TJ – 40 to +125 °C Tstg – 40 to +150 °C RθJC RθJA 1.5 62.5 °C/W TL 260 °C THERMAL CHARACTERISTICS Thermal Resistance — Junction to Case — Junction to Ambient Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 5 Seconds (1) VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. Preferred devices are Motorola recommended choices for future use and best overall value. REV 2 Motorola Thyristor Device Data Motorola, Inc. 1995 1 ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Symbol Characteristic Min Typ Max Unit OFF CHARACTERISTICS Peak Forward Blocking Current Peak Reverse Blocking Current (VAK = Rated VDRM or VRRM, Gate Open) IDRM IRRM mA — — TJ = 25°C TJ = 125°C — — 0.01 2.0 ON CHARACTERISTICS Peak On-State Voltage* (ITM = 50 A) VTM — — 1.8 Volts Gate Trigger Current (Continuous dc) (VD = 12 V, RL = 100 Ω) IGT 4.0 10 30 mA Gate Trigger Voltage (Continuous dc) (VD = 12 V, RL = 100 Ω) VGT 0.5 0.65 1.0 Volts IH 5.0 25 40 mA dv/dt 50 200 — V/µs Hold Current (Anode Voltage =12 V) DYNAMIC CHARACTERISTICS Critical Rate of Rise of Off–State Voltage (VD = Rated VDRM, Exponential Waveform, Gate Open, TJ = 125°C) *Indicates Pulse Test: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%. T C , MAXIMUM ALLOWABLE CASE TEMPERATURE ( C) 125 ° 35 P(AV) , AVERAGE POWER DISSIPATION (WATTS) 120 115 a 110 a = Conduction 105 Angle 100 95 90 85 a = 30° 80 75 60 ° 90° 120° 180° dc 0 dc a 180° 25 120° 90° 60 ° 20 a = 30° 15 10 5 0 0 5 10 15 20 IT(AV), AVERAGE ON–STATE CURRENT (AMPS) Figure 1. Average Current Derating 2 5 30 25 0 15 20 5 10 IT(AV), AVERAGE ON–STATE CURRENT (AMPS) 25 Figure 2. Maximum On–State Power Dissipation Motorola Thyristor Device Data I T , INSTANTANOUS ON-STATE CURRENT (AMPS) 1 R(t) TRANSIENT THERMAL R (NORMALIZED) 100 Maximum @ TJ = 125°C Typical @ TJ = 25°C 10 Maximum @ TJ = 25°C 1 0.1 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 Z qJC(t) 0.01 0.1 2.8 + RqJC @ R(t) 0.1 1 VT, INSTANTANEOUS ON–STATE VOLTAGE (VOLTS) Figure 3. On–State Characteristics 10 100 t, TIME (ms) @ 1 10 4 1000 Figure 4. Transient Thermal Response 100 I L , LATCHING CURRENT (mA) I H , HOLDING CURRENT (mA) 100 10 1 –40 –25 –10 5 20 35 50 65 80 TJ, JUNCTION TEMPERATURE (°C) 95 110 10 –40 125 –10 5 20 35 50 65 80 TJ, JUNCTION TEMPERATURE (°C) 95 110 125 Figure 6. Typical Latching Current Versus Junction Temperature Figure 5. Typical Holding Current Versus Junction Temperature 100 0.85 VGT, GATE TRIGGER VOLTAGE (VOLTS) I GT, TRIGGER CURRENT (mA) –25 10 0.8 0.75 0.7 0.65 0.6 0.55 0.5 0.45 1 –40 –25 –10 5 20 35 50 65 80 TJ, JUNCTION TEMPERATURE (°C) 95 110 Figure 7. Typical Gate Trigger Current Versus Junction Temperature Motorola Thyristor Device Data 125 0.4 –40 –25 –10 5 20 35 50 65 80 TJ, JUNCTION TEMPERATURE (°C) 95 110 125 Figure 8. Typical Gate Trigger Voltage Versus Junction Temperature 3 2500 1200 2000 STATIC dv/dt (V/us) 1000 STATIC dv/dt (V/us) Gate Cathode Open, (dv/dt does not depend on RGK ) Gate–Cathode Open, (dv/dt does not depend on RGK) 800 85°C 600 100°C 110°C 1500 VPK = 275 1000 VPK = 400 400 VPK = 600 TJ = 125°C 500 200 0 VPK = 800 0 200 300 400 500 600 700 800 80 85 90 95 100 105 110 TJ, Junction Temperature (°C ) VPK , Peak Voltage (Volts) Figure 9. Typical Exponential Static dv/dt Versus Peak Voltage. 115 120 125 Figure 10. Typical Exponential Static dv/dt Versus Junction Temperature. I TSM, SURGE CURRENT (AMPS) 300 1 CYCLE 280 260 240 220 200 TJ=125° C f=60 Hz 180 160 1 2 3 4 5 6 7 NUMBER OF CYCLES 8 9 10 Figure 11. Maximum Non–Repetitive Surge Current 4 Motorola Thyristor Device Data PACKAGE DIMENSIONS –T– B NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. SEATING PLANE C F T S 4 A Q 1 2 3 U H K Z L R V J STYLE 3: PIN 1. 2. 3. 4. G D N Motorola Thyristor Device Data CASE 221A–06 (TO-220AB) CATHODE ANODE GATE ANODE DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ––– ––– 0.080 MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ––– ––– 2.04 5 Motorola reserves the right to make changes without further notice to any products herein. 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Box 20912; Phoenix, Arizona 85036. 1–800–441–2447 JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, Toshikatsu Otsuki, 6F Seibu–Butsuryu–Center, 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–3521–8315 MFAX: [email protected] – TOUCHTONE (602) 244–6609 INTERNET: http://Design–NET.com HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298 6 ◊ Motorola Thyristor Device Data *MCR25/D* MCR25/D