MBRF1635 THRU MBRF16100 Isolation 16.0 AMPS. Schottky Barrier Rectifiers Voltage Range 35 to 100 Volts Current 16.0 Amperes ITO-220AC Features .185(4.7) .173(4.4) Plastic material used carries Underwriters Laboratory Classifications 94V-0 Metal silicon junction, majority carrier conduction Low power loss, high efficiency High current capability, low forward voltage drop High surge capability For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications Guardring for overvoltage protection High temperature soldering guaranteed: 260oC/10 seconds,0.25”(6.35mm)from case .406(10.3) .390(9.90) .124(3.16) .118(3.00) .134(3.4)DIA .113(3.0)DIA .112(2.85) .100(2.55) .272(6.9) .248(6.3) .606(15.5) .583(14.8) .063(1.6) MAX .161(4.1) .146(3.7) Mechanical Data .110(2.8) .098(2.5) Cases: ITO-220AC molded plastic body Terminals: Lead solderable per MIL-STD-750, Method 2026 Polarity: As marked Mounting position: Any Mounting torque: 5 in. - lbs. max .071(1.8) MAX .543(13.8) .512(13.2) 2 PIN 1 .100(2.55) .100(2.55) PIN 2 Case Positive Weight: 0.08 ounce, 2.24 grams Dimensions in inches and (millimeters) Maximum Ratings and Electrical Characteristics Rating at 25℃ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20% Symbol MBRF MBRF MBRF MBRF MBRF MBRF Units Type Number 1635 1645 1650 1660 1690 16100 Maximum Recurrent Peak Reverse Voltage 35 45 50 60 90 100 V VRRM Maximum RMS Voltage 24 31 35 42 63 70 V VRMS Maximum DC Blocking Voltage 35 45 50 60 90 100 V VDC Maximum Average Forward Rectified Current at Tc=125OC Peak Repetitive Forward Current (Rated VR, Square Wave, 20KHz) at Tc=125oC Peak Forward Surge Current, 8.3 ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method ) Peak Repetitive Reverse Surge Current (Note 1) Maximum Instantaneous Forward Voltage at: (Note 2) IF=16A, TC=25oC IF=16A, TC=125oC Maximum Instantaneous Reverse Current @ Tc =25℃ at Rated DC Blocking Voltage (Note 2) @ Tc=125℃ I(AV) 16 A IFRM 32.0 A VF 0.63 0.57 0.75 0.65 0.85 0.75 V A 0.2 40 1.0 50.0 10,000 3.0 0.2 - mA mA V/uS ℃/W pF ℃ ℃ IR dV/dt RθJC Cj TJ TSTG Storage Temperature Range 0.5 A 1.0 Maximum Typical Thermal Resistance(Note 3) Operating Junction Temperature Range 250 IRRM Voltage Rate of Change (Rated VR) Typical Junction Capacitance 150 IFSM Notes: 1. 2.0us Pulse Width, f=1.0 KHz 2. Pulse Test: 300us Pulse Width, 1% Duty Cycle 3. Mounted on Heatsink Size of 2 in x 3 in x 0.25 in Al-Plate. - 116 - 560 420 -65 to +150 -65 to +175 RATINGS AND CHARACTERISTIC CURVES (MBRF1635 THRU MBRF16100) FIG.2- MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT FIG.1- FORWARD CURRENT DERATING CURVE 350 RESISTIVE OR INDUCTIVE LOAD PEAK FORWARD SURGE CURRENT. (A) AVERAGE FORWARD CURRENT. (A) 20 16 12 8 4 250 200 50 100 o CASE TEMPERATURE. ( C) MBR 100 F163 5-MB 50 1 150 F169 RF16 0-MB RF1 6100 60 10 100 NUMBER OF CYCLES AT 60Hz FIG.4- TYPICAL REVERSE CHARACTERISTICS FIG.3- TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS 40 50 Tj=125 0C 10 10 INSTANTANEOUS REVERSE CURRENT. (mA) INSTANTANEOUS FORWARD CURRENT. (A) MBR 150 0 0 Tj=Tj max. 8.3ms Single Half Sine Wave JEDEC Method 300 Pulse Width=300 s 1% Duty Cycle 1 Tj=25 0C 0.1 MBRF1635-MBRF1645 MBRF1650-MBRF1660 MBRF1690-MBRF16100 Tj=125 0C 1 Tj=75 0C 0.1 0.01 Tj=25 0C MBRF1635-MBRF1645 MBRF1650-MBRF16100 0.01 0 0.1 0.2 0.3 0.4 0.001 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 0 FIG.5- TYPICAL JUNCTION CAPACITANCE 60 80 100 120 140 TRANSIENT THERMAL IMPEDANCE.( OC/W) 100 Tj=25 0C f=1.0MHz Vsig=50mVp-p JUNCTION CAPACITANCE.(pF) 40 FIG.6- TYPICAL TRANSIENT THERMAL IMPEDANCE 6,000 1,000 MBRF1635-MBRF1660 MBRF1690-MBRF16100 100 0.1 20 PERCENT OF RATED PEAK REVERSE VOLTAGE. (%) FORWARD VOLTAGE. (V) 1.0 10 100 REVERSE VOLTAGE. (V) 10.0 1 0.1 0.01 0.1 1 T, PULSE DURATION. (sec) - 117 - 10 100