DISCRETE SEMICONDUCTORS DATA SHEET BSP128 N-channel enhancement mode vertical D-MOS transistor Product specification File under Discrete Semiconductors, SC13b April 1995 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor FEATURES BSP128 QUICK REFERENCE DATA • Direct interface to C-MOS, TTL, etc. • High-speed switching • No secondary breakdown. DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in a SOT223 envelope and intended for use as a line current interruptor in telephone sets and for applications in relay, high-speed and line transformer drivers. SYMBOL PARAMETER MAX. UNIT VDS drain-source voltage 200 V ID DC drain current 350 mA RDS(on) drain-source on-resistance 8 Ω VGS(th) gate-source threshold voltage 1.8 V d 4 handbook, halfpage g PINNING - SOT223 1 PIN DESCRIPTION 2 s 3 Top view MAM054 Code: BSP128 1 gate 2 drain 3 source 4 drain Fig.1 Simplified outline (SOT223) and symbol. LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT − 200 V − 20 V − 350 mA − 1.4 A − 1.5 W storage temperature range −65 150 °C junction temperature − 150 °C VDS drain-source voltage ±VGSO gate-source voltage ID DC drain current IDM peak drain current Ptot total power dissipation Tstg Tj open drain up to Tamb = 25 °C (note 1) THERMAL RESISTANCE SYMBOL Rth j-a PARAMETER THERMAL RESISTANCE from junction to ambient (note 1) 83.3 K/W Note 1. Device mounted on an epoxy printed circuit board, 40 x 40 x 1.5 mm, mounting pad for the drain tab minimum 6 cm2. April 1995 2 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor BSP128 CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER V(BR)DSS drain-source breakdown voltage CONDITIONS ID = 10 µA; VGS = 0 MIN. TYP. MAX. UNIT 200 − − V IDSS drain-source leakage current VDS = 160 V; VGS = 0 − − 1 µA ±IGSS gate-source leakage current ±VGS = 20 V; VDS = 0 − − 100 nA VGS(th) gate-source threshold voltage ID = 1 mA; VGS = VDS 0.4 − 1.8 V RDS(on) drain-source on-resistance ID = 100 mA; VGS = 2.8 V − 5 8 Ω Yfs transfer admittance ID = 300 mA; VDS = 25 V 200 400 − mS Ciss input capacitance VDS = 25 V; VGS = 0; f = 1 MHz − 50 80 pF Coss output capacitance VDS = 25 V; VGS = 0; f = 1 MHz − 20 30 pF Crss feedback capacitance VDS = 25 V; VGS = 0; f = 1 MHz − 5 10 pF Switching times (see Figs 2 and 3) ton turn-on time ID = 250 mA; VDD = 50 V; VGS = 0 to 10 V − 5 10 ns toff turn-off time ID = 250 mA; VDD = 50 V; VGS = 0 to 10 V − 20 30 ns VDD = 50 V handbook, halfpage handbook, halfpage 90 % INPUT 10 % 90 % 10 V 0V OUTPUT ID 50 Ω 10 % ton MBB691 toff MBB692 VDD = 50 V. Fig.2 Switching times test circuit. April 1995 Fig.3 Input and output waveforms. 3 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor BSP128 PACKAGE OUTLINE Plastic surface mounted package; collector pad for good heat transfer; 4 leads D SOT223 E B A X c y HE v M A b1 4 Q A A1 1 2 3 Lp bp e1 w M B detail X e 0 2 4 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 bp b1 c D E e e1 HE Lp Q v w y mm 1.8 1.5 0.10 0.01 0.80 0.60 3.1 2.9 0.32 0.22 6.7 6.3 3.7 3.3 4.6 2.3 7.3 6.7 1.1 0.7 0.95 0.85 0.2 0.1 0.1 OUTLINE VERSION REFERENCES IEC JEDEC EIAJ ISSUE DATE 96-11-11 97-02-28 SOT223 April 1995 EUROPEAN PROJECTION 4 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor BSP128 DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. April 1995 5 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor NOTES April 1995 6 BSP128 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor NOTES April 1995 7 BSP128 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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