NTE NTE2976 Mosfet n-channel, enhancement mode high speed switch Datasheet

NTE2976
MOSFET
N–Channel, Enhancement Mode
High Speed Switch
Features:
D Low Input Capacitance
D Low Static RDS(on)
D Fast Switching Time
D Guaranteed Avalanche Resistance
Applications:
D Switching Power Supply of AC 240V Input
D High Voltage Power Supply
D Inverter
Absolute Maximum Ratings: (TC = +25°C unless otherwise specified)
Drain–Source Voltage, VDSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 700V
Gate–Source Voltage, VGSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±30V
Drain Current, ID
Continuous DC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6A
Peak (Pulse Width ≤ 10µs, Duty Cycle ≤ 1/100) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18A
Continuous DC Source Current, IS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6A
Total Power Dissipation, PT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50W
Repetitive Avalanche Current (Tch = +150°C), IAR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6A
Single Avalanche Energy (Tch = +25°C), EAS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 190mJ
Repetitive Avalanche Energy (Tch = +25°C), EAR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19mJ
Operating Channel Temperature, Tch . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.5°C/W
Dielectric Strength (Terminals–to–Case, AC, 1 minute), Vdis . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2kV
Mounting Torque, TOR
Maximum . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.5N•m
Recommended . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.3N•m
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Drain–Source Breakdown Voltage
Test Conditions
V(BR)DSS ID = 1mA, VGS = 0V
Min
Typ
Max
Unit
700
–
–
V
Zero Gate Voltage Drain Current
IDSS
VDS = 700V, VGS = 0V
–
–
250
µA
Gate–Source Leakage Current
IGSS
VGS = ±30V, VDS = 0V
–
–
±0.1
µA
gfs
ID = 3A, VDS = 10V
3
5
–
S
RDS(on)
ID = 3A, VGS = 10V
–
1.5
2.0
Ω
2.5
3.0
3.5
V
Forward Transconductance
Static Drain–Source On–State Resistance
Gate Threshold Voltage
VTH
ID = 1mA, VDS = 10V
Source–Drain Diode Forward Voltage
VSD
IS = 3A, VGS = 0V
–
–
1.5
V
Total Gate Charge
Qg
VDD = 400V, VGS = 10V, ID = 6A
–
35
–
nC
Input Capacitance
Ciss
VDS = 10V, VGS = 0V, f = 1MHz
–
1250
–
pF
Reverse Transfer Capacitance
Crss
–
250
–
pF
Output Capacitance
Coss
–
530
–
pF
–
60
110
ns
–
160
250
ns
Turn–On Time
ton
Turn–Off Time
toff
ID = 3A, RL = 50Ω, VGS = 10V
.402 (10.2) Max
.224 (5.7) Max
.122 (3.1)
Dia
.295
(7.5)
.165
(4.2)
.669
(17.0)
Max
G
D
S
.531
(13.5)
Min
.100 (2.54)
.059 (1.5) Max
.173 (4.4)
Max
.114 (2.9)
Max