INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRL3803V，IIRL3803V ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤5.5mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRIPTION ·Combine with the fast switching speed and ruggedized device design,provide the designer with an extremely efficient and reliable device for use in a wide variety of applications. ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 30 V VGS Gate-Source Voltage ±16 V ID Drain Current-Continuous 140 A IDM Drain Current-Single Pulsed 470 A PD Total Dissipation @TC=25℃ 200 W Tj Max. Operating Junction Temperature 175 ℃ -55~175 ℃ Tstg Storage Temperature ·THERMAL CHARACTERISTICS SYMBOL Rth(ch-c) Rth(ch-a) PARAMETER Channel-to-case thermal resistance Channel-to-ambient thermal resistance isc website：www.iscsemi.cn 1 MAX UNIT 0.74 ℃/W 62 ℃/W isc & iscsemi is registered trademark INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRL3803V，IIRL3803V ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER BVDSS Drain-Source Breakdown Voltage VGS=0V; ID =250μA 30 V VGS(th) Gate Threshold Voltage VDS=VGS; ID =250μA 1 V RDS(on) Drain-Source On-Resistance VGS=10V; ID=71A IGSS Gate-Source Leakage Current VGS=±16V IDSS Drain-Source Leakage Current VSD Diode forward voltage isc website：www.iscsemi.cn CONDITIONS MIN TYP MAX UNIT 5.5 mΩ ±100 nA VDS=30V; VGS= 0V 25 μA IS=71A; VGS = 0V 1.2 V 2 isc & iscsemi is registered trademark