CR6PM-12 Thyristor Medium Power Use REJ03G0358-0100 Rev.1.00 Aug.20.2004 Features • • • • • Insulated Type • Planar Passivation Type • UL Recognized : Yellow Card No. E223904 File No. E80271 IT (AV) : 6 A VDRM : 600 V IGT : 10 mA Viso : 1500V Outline TO-220F 2 3 1 1. Cathode 2. Anode 3. Gate 12 3 Applications Switching mode power supply, regulator for autocycle, motor control, heater control, and other general purpose control applications Maximum Ratings Parameter Repetitive peak reverse voltage Non-repetitive peak reverse voltage DC reverse voltage Repetitive peak off-state voltage DC off-state voltage Rev.1.00, Aug.20.2004, page 1 of 6 Symbol Voltage class 12 Unit VRRM VRSM VR (DC) VDRM VD (DC) 600 720 480 600 480 V V V V V CR6PM-12 Parameter RMS on-state current Average on-state current Symbol IT (RMS) IT (AV) Ratings 9.4 6 Unit A A ITSM 90 A I2 t 34 A2s PGM PG (AV) VFGM VRGM IFGM Tj Tstg — Viso 5 0.5 6 10 2 – 40 to +125 – 40 to +125 2.0 1500 W W V V A °C °C g V Surge on-state current I2t for fusing Peak gate power dissipation Average gate power dissipation Peak gate forward voltage Peak gate reverse voltage Peak gate forward current Junction temperature Storage temperature Mass Isolation voltage Conditions Commercial frequency, sine half wave 180° conduction, Tc = 85°C 60Hz sine half wave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current Typical value Ta = 25°C, AC 1 minute, each terminal to case Electrical Characteristics Parameter Symbol Rated value Min. Typ. Max. Unit Repetitive peak reverse current Repetitive peak off-state current On-state voltage IRRM IDRM VTM — — — — — — 2.0 2.0 1.7 mA mA V Gate trigger voltage VGT — — 1.0 V 0.2 — — V VGD Gate non-trigger voltage Gate trigger current IGT — — 10 mA Holding current IH — 15 — mA Thermal resistance Rth (j-c) — — 4.0 °C/W Notes: 1. The contact thermal resistance Rth (c-f) in case of greasing is 0.5°C/W. Rev.1.00, Aug.20.2004, page 2 of 6 Test conditions Tj = 125°C, VRRM applied Tj = 125°C, VDRM applied Tc = 25°C, ITM = 20 A, instantaneous value Tj = 25°C, VD = 6 V, IT = 1 A Tj = 125°C, VD = 1/2 VDRM Tj = 25°C, VD = 6 V, IT = 1 A Tj = 25°C, VD = 12 V Junction to caseNote1 CR6PM-12 Performance Curves 103 7 Tc = 125°C 5 3 2 Surge On-State Current (A) 101 7 5 3 2 101 7 5 3 2 100 7 5 3 2 1 2 3 4 160 140 120 100 80 60 40 20 2 3 4 5 7 101 2 3 4 5 7 102 On-State Voltage (V) Conduction Time (Cycles at 60Hz) Gate Characteristics Gate Trigger Current vs. Junction Temperature VFGM = 6V VGT = 1V PGM = 5W PG(AV) = 0.5W IGT = 10mA VGD = 0.2V IFGM = 2A 10–1 5 7 101 2 3 5 7 102 2 3 5 7 103 2 3 5 Gate Trigger Voltage (Tj = t°C) Gate Trigger Voltage (Tj = 25°C) × 100 (%) 180 0 100 5 × 100 (%) 102 7 5 3 2 0 Gate Trigger Current (Tj = t°C) Gate Trigger Current (Tj = 25°C) Gate Voltage (V) 200 102 7 5 3 2 100 Rated Surge On-State Current 103 7 5 3 2 Typical Example 102 7 5 3 2 101 7 5 3 2 100 –60 –40 –20 0 20 40 60 80 100 120 140 Gate Current (mA) Junction Temperature (°C) Gate Trigger Voltage vs. Junction Temperature Maximum Transient Thermal Impedance Characteristics (Junction to case) 103 7 5 Typical Example 3 2 102 7 5 3 2 101 –60 –40 –20 0 20 40 60 80 100 120 140 Junction Temperature (°C) Rev.1.00, Aug.20.2004, page 3 of 6 Transient Thermal Impedance (°C/W) On-State Current (A) Maximum On-State Characteristics 102 7 5 3 2 101 7 5 3 2 100 7 5 3 2 10–1 7 5 3 2 10–2 10–3 2 3 5 710–22 3 5 710–12 3 5 7 100 2 3 5 7 101 Time (s) CR6PM-12 Allowable Case Temperature vs. Average On-State Current (Single-Phase Half Wave) Maximum Average Power Dissipation (Single-Phase Half Wave) 160 θ = 30° 14 180° 120° 90° 60° 12 Case Temperature (°C) Average Power Dissipation (W) 16 10 8 6 θ 4 360° 2 0 2 4 6 8 10 12 14 80 60 40 θ = 30° 60° 90° 120° 0 1 2 3 4 5 180° 6 7 Average On-State Current (A) Maximum Average Power Dissipation (Single-Phase Full Wave) Allowable Case Temperature vs. Average On-State Current (Single-Phase Full Wave) θ = 30° 14 180° 120° 90° 60° 12 10 8 6 4 θ 2 360° 0 θ 2 4 6 8 10 12 14 θ 120 360° θ Resistive loads 100 80 60 θ = 30° 90° 180° 40 60° 120° 20 Resistive loads 0 140 0 16 0 2 4 6 8 12 10 14 Average On-State Current (A) Average On-State Current (A) Maximum Average Power Dissipation (Rectangular Wave) Allowable Case Temperature vs. Average On-State Current (Rectangular Wave) 16 16 160 θ = 30° 60° DC 140 270° 180° 120° 90° 12 10 Case Temperature (°C) 14 8 6 θ 4 360° 2 0 8 160 Case Temperature (°C) Average Power Dissipation (W) 100 Average On-State Current (A) 16 Average Power Dissipation (W) 120 0 16 θ 360° 20 Resistive, inductive loads 0 Resistive, inductive loads 140 Resistive, inductive loads 0 2 4 6 8 10 12 14 Average On-State Current (A) Rev.1.00, Aug.20.2004, page 4 of 6 16 θ 120 360° Resistive, inductive loads 100 80 60 θ = 30° 90° 180° 40 60° 120° 270° 20 0 DC 0 2 4 6 8 10 12 14 Average On-State Current (A) 16 Typical Example 140 120 100 80 60 40 20 0 –60 –40 –20 0 20 40 60 80 100 120 140 × 100 (%) 160 Breakover Voltage (dv/dt = vV/µs) Breakover Voltage (dv/dt = 1V/µs) Breakover Voltage vs. Junction Temperature Breakover Voltage vs. Rate of Rise of Off-State Voltage 160 Typical Example Tj = 125°C 140 120 100 80 60 40 20 0 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 Junction Temperature (°C) Rate of Rise of Off-State Voltage (V/µs) Holding Current vs. Junction Temperature Turn-Off Time vs. Junction Temperature 103 7 5 80 Typical Example Turn-Off Time (µs) 70 3 2 102 7 5 3 2 Typical Example 60 50 40 30 Distribution 20 IT = 6A, –di/dt = 5A/µs, VD = 300V, dv/dt = 20V/µs VR = 50V 10 101 –60 –40 –20 0 20 40 60 80 100 120 140 0 0 20 40 60 80 100 120 140 160 Junction Temperature (°C) Repetitive Peak Reverse Voltage vs. Junction Temperature Gate Trigger Current vs. Gate Current Pulse Width 160 Typical Example 140 120 100 80 60 40 20 0 –60 –40 –20 0 20 40 60 80 100 120 140 Junction Temperature (°C) Rev.1.00, Aug.20.2004, page 5 of 6 × 100 (%) Junction Temperature (°C) 103 7 5 Gate Trigger Current (tw) Gate Trigger Current (DC) Repetitive Peak Reverse Voltage (Tj = t°C) Repetitive Peak Reverse Voltage (Tj = 25°C) × 100 (%) Holding Current (Tj = t°C) Holding Current (Tj = 25°C) × 100 (%) Breakover Voltage (Tj = t°C) Breakover Voltage (Tj = 25°C) × 100 (%) CR6PM-12 3 2 Typical Example 102 7 5 3 2 101 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 Gate Current Pulse Width (µs) CR6PM-12 Package Dimensions TO-220F EIAJ Package Code JEDEC Code Conforms Mass (g) (reference value) Lead Material 2.0 Cu alloy 10.5 max 2.8 17 8.5 5.0 1.2 5.2 3.6 φ 3.2 ± 0.2 13.5 min 1.3 max 0.8 0.5 2.54 2.6 Symbol 4.5 2.54 Dimension in Millimeters Min Typ Max A A1 A2 b D E e x y y1 ZD ZE Note 1) The dimensional figures indicate representative values unless otherwise the tolerance is specified. Order Code Lead form Standard packing Quantity Standard order code Straight type Vinyl sack 100 Type name +A Lead form Plastic Magazine (Tube) 50 Type name +A – Lead forming code Note : Please confirm the specification about the shipping in detail. Rev.1.00, Aug.20.2004, page 6 of 6 Standard order code example CR6PM-12A CR6PM-12A-A8 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor home page (http://www.renesas.com). 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein. http://www.renesas.com RENESAS SALES OFFICES Renesas Technology America, Inc. 450 Holger Way, San Jose, CA 95134-1368, U.S.A Tel: <1> (408) 382-7500 Fax: <1> (408) 382-7501 Renesas Technology Europe Limited. Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, United Kingdom Tel: <44> (1628) 585 100, Fax: <44> (1628) 585 900 Renesas Technology Europe GmbH Dornacher Str. 3, D-85622 Feldkirchen, Germany Tel: <49> (89) 380 70 0, Fax: <49> (89) 929 30 11 Renesas Technology Hong Kong Ltd. 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Hong Kong Tel: <852> 2265-6688, Fax: <852> 2375-6836 Renesas Technology Taiwan Co., Ltd. FL 10, #99, Fu-Hsing N. Rd., Taipei, Taiwan Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999 Renesas Technology (Shanghai) Co., Ltd. 26/F., Ruijin Building, No.205 Maoming Road (S), Shanghai 200020, China Tel: <86> (21) 6472-1001, Fax: <86> (21) 6415-2952 Renesas Technology Singapore Pte. Ltd. 1, Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632 Tel: <65> 6213-0200, Fax: <65> 6278-8001 © 2004. Renesas Technology Corp., All rights reserved. Printed in Japan. Colophon .1.0