HV9120/HV9123 High-Voltage, Current-Mode, PWM Controller Features Description • • • • HV9120 and HV9123 are Switch-Mode Power Supply (SMPS) controllers suitable for the control of a variety of converter topologies, including flyback and forward converter. 10 to 450V input voltage range <1.3 mA supply current >1 MHz clock 49% maximum duty version Applications • • • • • Off-line high frequency power supplies Universal input power supplies High density power supplies Very high efficiency power supplies Extra wide load range power supplies Using an internal, high-voltage regulator, HV9120 and HV9123 can derive a bias supply for starting-up and powering a converter from a variety of power sources, such as a 12V battery or the rectified AC (230 VAC) line. HV9120/HV9123 controllers include all essentials for a power-converter design, such as a bandgap reference, an error amplifier, a ramp generator, a high-speed PWM comparator, and a gate driver. A shutdown latch provides on/off control. Device power consumption is less than 6 mW when shutdown. HV9120 offers 50% maximum duty and HV9123 offers nearly 100% duty. Package Types 1 16 1 16 4 16-lead SOIC 16-lead PDIP See Table 3-1 for pin information 2016 Microchip Technology Inc. DS20005519A-page 1 HV9120/HV9123 Block Diagram HV9120 DS20005519A-page 2 2016 Microchip Technology Inc. HV9120/HV9123 Block Diagram HV9123 2016 Microchip Technology Inc. DS20005519A-page 3 HV9120/HV9123 1.0 ELECTRICAL CHARACTERISTICS ABSOLUTE MAXIMUM RATINGS† Input voltage, VIN .................................................................................................................................................... 450V Device supply voltage, VDD .................................................................................................................................... 15.5V Logic input voltage ........................................................................................................................... -0.3V to VDD + 0.3V Linear input voltage .......................................................................................................................... -0.3V to VDD + 0.3V High-voltage regulator input current (continuous), IIN .......................................................................................... 2.5 mA Operating temperature range ................................................................................................................ -40°C to +125°C Storage temperature range ................................................................................................................... -65°C to +150°C Power dissipation: 16-Lead SOIC ...................................................................................................................... 900 mW 16-Lead PDIP .................................................................................................................... 1000 mW † Notice: Stresses above those listed under “Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operational listings of this specification is not implied. Exposure to maximum rating conditions for extended periods may affect device reliability. ELECTRICAL CHARACTERISTICS Electrical Specifications: VDD = 10V, VIN = 48V, VDISC= 0V, RBIAS = 390 kΩ, ROSC = 330 kΩ, TA= 25°C, unless otherwise noted. Parameter Symbol Min Typ Max Units VREF 3.92 3.84 4.00 4.00 4.08 4.16 V Output impedance Short circuit current Change in VREF with temperature Oscillator Oscillator frequency Initial accuracy ZOUT ISHORT ∆VREF 15 - 30 125 0.25 45 250 - fMAX fOSC VDD regulation Temperature coefficient PWM Maximum duty cycle HV9120 HV9123 Dead time HV9123 Minimum duty cycle Pulse width where pulse drops out Current Limit Maximum input signal Delay to output - 1.0 80 160 - 3.0 100 200 170 120 240 15 - 49.0 95 - 49.4 97 225 - 49.6 99 0 % (Note 1) ns % - 80 125 ns HV9123 only (Note 1) – (Note 1) 1.0 - 1.2 80 1.4 120 V ns Reference Output voltage DS20005519A-page 4 DMAX DMIN VLIM tD Conditions RL= 10 MΩ RL= 10 MΩ, TA= -40°C to +125°C kΩ (Note 1) μA VREF= GND mV/°C TA= -40°C to +125°C (Note 1) MHz kHz ROSC= 0Ω ROSC= 330 kΩ (Note 2) ROSC= 150 kΩ (Note 2) % 9.5V< VDD<13.5V ppm/°C TA= -40°C to +125°C (Note 1) VFB= 0V VCS= 1.5V, VCOMP≤ 2.0V (Note 1) 2016 Microchip Technology Inc. HV9120/HV9123 ELECTRICAL CHARACTERISTICS (CONTINUED) Electrical Specifications: VDD = 10V, VIN = 48V, VDISC= 0V, RBIAS = 390 kΩ, ROSC = 330 kΩ, TA= 25°C, unless otherwise noted. Parameter Symbol Error Amplifier Feedback voltage VFB Input bias current IIN Input offset voltage VOS Open loop voltage gain AVOL Unity gain bandwidth GB Output source current ISOURCE Output sink current ISINK High-voltage Regulator and Start-up Input voltage VIN Input leakage current IIN Regulator turn-off threshold VTH voltage Undervoltage lockout VLOCK Supply Supply current IDD Quiescent supply current IQ Nominal bias current IBIAS Operating range VDD Shutdown Logic Shutdown delay tSD NSD pulse width tSW RST pulse width tRW Latching pulse width tLW Input low voltage VIL Input high voltage VIH Input current, input high voltage IIH Input current, input low voltage IIL Output Output high voltage VOH Output low voltage Output resistance VOL Pull up Pull down Pull up ROUT Pull down Rise time Fall time tR tF Min Typ Max Units Conditions 3.92 4.00 4.08 25 500 nulled during trim 60 80 1.0 1.3 -1.4 -2.0 0.12 0.15 - V nA dB MHz mA mA FB shorted to COMP VFB= 4.0V – (Note 1) (Note 1) VFB= 3.4V VFB= 4.5V 10 8.0 8.7 450 10 9.4 V μA V IIN< 10 µA; VCC> 9.4V VDD> 9.4V IIN= 10 µA 7.0 8.1 8.9 V – 9.0 0.75 0.55 20 - 1.3 13.5 mA mA μA V CL< 75 pF VNSD = 0V – – 50 50 25 7.0 - 50 1.0 -25 100 2.0 5.0 -35 ns ns ns ns V V μA μA CL= 500 pF, VCS= 0V (Note 1) (Note 1) (Note 1) VNSD, VRST =0V(Note 1) – – VIN= VDD VIN= 0V - - V IOUT= 10 mA VDD0.25 VDD0.3 - - - - 0.2 - - 0.3 - 15 8.0 20 25 20 30 - 10 30 20 30 75 75 V Ω IOUT= 10 mA, TA= -40°C to 125°C IOUT= -10 mA IOUT= -10 mA, TA= -40°C to 125°C IOUT= ±10 mA Ω IOUT= ±10 mA, TA= -40°C to 125°C ns ns CL= 500 pF (Note 1) CL= 500 pF(Note 1) Note 1: Design guidance only; Not 100% tested in production. 2: Stray capacitance on OSC in pin must be ≤ 5 pF. 2016 Microchip Technology Inc. DS20005519A-page 5 HV9120/HV9123 TEMPERATURE SPECIFICATIONS Parameter Symbol Min Typ Max Units Conditions Temperature Ranges Operating Temperature -40 Storage Temperature -65 125 °C – 150 °C Package Thermal Resistances Thermal Resistance, SOIC θja – 83 – °C/W Thermal Resistance, PDIP θja – 51 – °C/W 1.1 Truth Table TRUTH TABLE SHUTDOWN RESET OUTPUT H H H H→L L H Off, not latched L L Off, latched L→H L Off, latched, no change DS20005519A-page 6 Normal operation Normal operation, no change 2016 Microchip Technology Inc. HV9120/HV9123 2.0 TYPICAL PERFORMANCE CURVES Output Switching Frequency vs. Oscillator Resistance Error Amplifier Output Impedance (Z0) 106 1M 105 104 fOUT (Hz) Z0 (Ω) 10 HV9123 3 102 HV9120 100k 10 1.0 0.1 100 1K 10K 100K 1M 10k 10k 10M 100k Frequency (Hz) PSRR - Error Amplifier and Reference 0 1M ROSC (Ω) 80 -10 70 -20 60 -30 50 Error Amplifier Open Loop Gain/Phase 180 -40 -50 60 40 0 20 -60 -60 10 -70 0 -80 10 100 1K 10K 100K -120 -180 -10 100 1M Phase (OC) Gain (dB) PSRR (dB) 120 1K 10K 100K 1M Frequency (Hz) Frequency (Hz) RDISCHARGE vs. tOFF (HV9123 only) 104 VDD = 10V ROSC = 100k tOFF (nsec) Bias Current (μA) 100 VDD = 10V 10 10 3 ROSC = 10k ROSC = 1.0k 1.0 105 106 107 Bias Resistance (Ω) FIGURE 2-1: 102 10-1 10 101 102 103 104 105 106 RDISCHARGE (Ω) Typical Performance Curves 2016 Microchip Technology Inc. DS20005519A-page 7 HV9120/HV9123 3.0 PIN DESCRIPTION The locations of the pins are listed in Features. TABLE 3-1: PIN DESCRIPTION Pin # Symbol HV9120 Symbol HV9123 1 VIN VIN High-voltage, VDD regulator input 2 NC NC No connect 3 NC NC No connect 4 CS CS Current-sense input 5 GATE GATE Gate-drive output 6 GND GND Ground 7 VDD VDD High-voltage, VDD regulator output 8 OSCO OSCO 9 OSCI OSCI Oscillator Input 10 NC DISC Oscillator discharge, current set 11 VREF VREF 4V Reference output Reference voltage level can be overridden by an externally-applied voltage source. 12 NSD NSD Active low input to set shutdown latch 13 RST RST Active high input to reset shutdown latch 14 COMP COMP 15 FB FB Feedback-voltage input 16 BIAS BIAS Internal bias, current set DS20005519A-page 8 Description Oscillator output Error-amplified output 2016 Microchip Technology Inc. HV9120/HV9123 4.0 TEST CIRCUITS The test circuits for characterizing error-amplifier output impedance, ZOUT, and error-amplifier, power-supply rejection ration, PSRR, are shown in Figure 4-1. +10V (VDD) Error Amp ZOUT 0.1V swept 10Hz - 1.0MHz PSRR 1.0V swept 100Hz - 2.2MHz 60.4k (FB) 100k 1% 10.0V 100k 1% – + Reference V1 GND (-VIN) Tektronix P6021 (1 turn secondary) 0.1μF FIGURE 4-1: 4.0V 40.2k V2 – V1 + Reference V2 0.1μF Test Circuits 2016 Microchip Technology Inc. DS20005519A-page 9 HV9120/HV9123 5.0 DETAILED DESCRIPTION 5.1 High-Voltage Regulator The high-voltage regulator included in HV9120 and HV9123 consists of a high-voltage, n-channel, depletion-mode DMOS transistor, driven by an error amplifier, providing a current path between the VIN terminal and the VDD terminal. The maximum current, about 20 mA, occurs when VDD = 0, with current reducing as VDD rises. This path shuts off when VDD rises to somewhere between 7.8 and 9.4V. So, if VDD is held at 10 or 12V by an external source, no current other than leakage is drawn through the high voltage transistor. This minimizes dissipation. Use an external capacitor between VDD and GND to store energy used by the chip in the time between shutoff of the high voltage path and the VDD supply’s output rising enough to take over powering the chip. This capacitor should have a value of 100X or more the effective gate capacitance of the MOSFET being driven, as well as very good high-frequency characteristics. See the equation below. Ceramic caps work well. Electrolytic capacitors are generally not suitable. C VDD 100 gate charge of FET at 10V The device uses a resistor divider string to monitor VDD for both the under voltage lockout circuit and the shutoff circuit of the high voltage FET. Setting the under voltage sense point about 0.6V lower on the string than the FET shutoff point guarantees that the under voltage lockout releases before the FET shuts off. 5.2 Bias Circuit HV9120 and HV9123 require an external bias resistor, connected between the BIAS pin and GND, to set currents in a series of current mirrors used by the analog sections of the chip. The nominal external bias current requirement is 15 to 20 µA, which can be set by a 390 kΩ to 510 kΩ resistor if VDD = 10V, or a 510 kΩ to 680 kΩ resistor if VDD = 12V. A precision resistor is not required, ±5% meets the device requirements. 5.3 Clock Oscillator The clock oscillator of the HV9120 and HV9123 consists of a ring of CMOS inverters, timing capacitors, and a capacitor-discharge FET. A single external resistor between the OSCI and OSCO sets the oscillator frequency (see Figure 2-1, Output Switching Frequency vs Oscillator Resistance). HV9120 includes a frequency-dividing flip-flop that allows the part to operate with a 50% duty limit. Accordingly, the effective switching frequency of the power DS20005519A-page 10 converter is half the oscillator frequency (see Figure 21, Output Switching Frequency vs Oscillator Resistance). An internal, discharge FET resets the oscillator ramp at the end of the oscillator cycle. The FET is internally connected to GND in HV9120 (50% max duty version). Whereas, the FET is externally connected to GND, by way of a resistor, in the HV9123 (100% duty version). The resistor programs the oscillator dead time at the end of the oscillator period in HV9123 applications. The oscillator turns off during shutdown to reduce supply current by about 150 μA. 5.4 Reference The reference of the HV9120 and HV9123 consists of a band-gap reference, followed by a buffer amplifier, which scales the voltage up to 4.0V. The scaling resistors of the buffer amplifier are trimmed during manufacture so that the output of the error amplifier, when connected in a gain of -1 configuration, is as close to 4.0V as possible. This nulls out the input offset of the error amplifier. As a consequence, even though the observed reference voltage of a specific part may not be exactly 4.0V, the feedback voltage required for proper regulation will be 4.0V. An approximately 50 kΩ resistor is located internally between the output of the reference buffer amplifier and the circuitry it feeds–reference output pin and noninverting input to the error amplifier. This allows overriding the internal reference with a low impedance voltage source ≤6.0V. Using an external reference reinstates the input offset voltage of the error amplifier. Overriding the reference should seldom be necessary. The reference of the HV9120 and HV9123 is a high impedance node, and usually there will be significant electrical noise nearby. Therefore, a bypass capacitor between the reference pin and GND is strongly recommended. The reference buffer amplifier is compensated to be stable with a capacitive load of 0.01 to 0.1 µF. 5.5 Error Amplifier The error amplifier in HV9120 and HV9123 is a lowpower, differential-input, operational amplifier. A PMOS input stage is used, so the common mode range includes ground and the input impedance is high. 5.6 Current Sense Comparators HV9120 and HV9123 use a dual-comparator system with independent comparators for modulation and current limiting. This allows the designer greater latitude in compensation design, as there are no clamps, except ESD protection, on the compensation pin. 2016 Microchip Technology Inc. HV9120/HV9123 5.7 Remote Shutdown 5.8 The NSD and RST pins control the shutdown latch. These pins have internal, current-source pull-ups so they can be driven from open drain logic. When not used they should be left open, or connected to VDD. The output buffer of HV9120 and HV9123 is of standard CMOS construction–P-channel pull-up and Nchannel pull-down. Thus, the body-drain diodes of the output stage can be used for spike clipping. External Schottky diode clamping of the output is not required. VDD 1.5V CS 0 Output Buffer 50% NSD tR ≤ 10ns tF ≤ 10ns 50% 0 tD VDD tSD VDD GATE 90% GATE 0 0 VDD NSD 0 90% tSW 50% 50% tR, tF ≤ 10ns tLW VDD RST 0 FIGURE 5-1: 50% 50% 50% tRW Shutdown Timing Waveforms 2016 Microchip Technology Inc. DS20005519A-page 11 HV9120/HV9123 6.0 PACKAGING INFORMATION 6.1 Package Marking Information 16-lead SOIC XXXXXXXXXXX XXXXXXXXX e3 YYWWNNN 16-lead PDIP XXXXXXXXXXXXXX XXXXXXXXXXXX e3 YYWWNNN Legend: XX...X Y YY WW NNN e3 * Note: DS20005519A-page 12 Example HV9120NG 1611343 e3 Example HV9120P e3 1611343 Product Code or Customer-specific information Year code (last digit of calendar year) Year code (last 2 digits of calendar year) Week code (week of January 1 is week ‘01’) Alphanumeric traceability code Pb-free JEDEC® designator for Matte Tin (Sn) This package is Pb-free. The Pb-free JEDEC designator ( e3 ) can be found on the outer packaging for this package. In the event the full Microchip part number cannot be marked on one line, it will be carried over to the next line, thus limiting the number of available characters for product code or customer-specific information. Package may or not include the corporate logo. 2016 Microchip Technology Inc. HV9120/HV9123 16-Lead SOIC (Narrow Body) Package Outline (NG) 9.90x3.90mm body, 1.75mm height (max), 1.27mm pitch D 16 θ1 E1 E Note 1 (Index Area D/2 x E1/2) L2 1 L Top View View B View B A h A A2 h Seating Plane e A1 Seating Plane θ L1 Gauge Plane Note 1 b Side View View A-A A Note: For the most current package drawings, see the Microchip Packaging Specification at www.microchip.com/packaging. Note: 1. 7KLVFKDPIHUIHDWXUHLVRSWLRQDO,ILWLVQRWSUHVHQWWKHQD3LQLGHQWL¿HUPXVWEHORFDWHGLQWKHLQGH[DUHDLQGLFDWHG7KH3LQLGHQWL¿HUFDQEH DPROGHGPDUNLGHQWL¿HUDQHPEHGGHGPHWDOPDUNHURUDSULQWHGLQGLFDWRU Symbol MIN Dimension NOM (mm) MAX A A1 A2 b D 1.35* 0.10 1.25 0.31 9.80* 1.75 0.25 1.65* 0.51 9.90 E E1 e 5.80* 3.80* 6.00 3.90 10.00* 6.20* 4.00* 1.27 BSC h L 0.25 0.40 0.50 1.27 L1 L2 1.04 0.25 REF BSC ș ș 0O 5O - - 8 O 15O JEDEC Registration MS-012, Variation AC, Issue E, Sept. 2005. 7KLVGLPHQVLRQLVQRWVSHFL¿HGLQWKH-('(&GUDZLQJ Drawings are not to scale. 2016 Microchip Technology Inc. DS20005519A-page 13 HV9120/HV9123 16-Lead PDIP (.300in Row Spacing) Package Outline (P) .790x.250in body, .210in height (max), .100in pitch D 16 Note 1 (Index Area) E1 E b1 1 D1 D1 b Top View View B View B A A Seating Plane A2 A1 L eA eB e A Side View View A - A Note: For the most current package drawings, see the Microchip Packaging Specification at www.microchip.com/packaging. Note: 1. $3LQLGHQWL¿HUPXVWEHORFDWHGLQWKHLQGH[DUHDLQGLFDWHG7KH3LQLGHQWL¿HUFDQEHDPROGHGPDUNLGHQWL¿HUDQHPEHGGHGPHWDOPDUNHURU DSULQWHGLQGLFDWRU Symbol Dimension (inches) A A1 A2 b b1 D D1 E E1 MIN .130* .015 .115 .014 .045 .745† .005 .290† .240 NOM - - .130 .018 .060 .790 - .310 .250 .195 † .070 † .050* .325 .280 MAX .210 .035* .023 .810 e .100 BSC eA .300 BSC eB L .300* .115 - .130 .430 .150 -('(&5HJLVWUDWLRQ069DULDWLRQ$%,VVXH'-XQH 7KLVGLPHQVLRQLVQRWVSHFL¿HGLQWKH-('(&GUDZLQJ 7KLVGLPHQVLRQGLIIHUVIURPWKH-('(&GUDZLQJ Drawings not to scale. DS20005519A-page 14 2016 Microchip Technology Inc. HV9120/HV9123 APPENDIX A: REVISION HISTORY Revision A (May 2016) • Updated file to Microchip format. • Merged Supertex Doc #s DSFP-HV9120 and DSFP-HV9123 to Microchip DS20005519A. • Revised Electrical Characteristics to accommodate the merged products. • Updated Pin names to reflect new naming convention. • Significant text changes to Detailed Description • Minor text changes throughout. 2016 Microchip Technology Inc. DS20005519A-page 15 HV9120/HV9123 PRODUCT IDENTIFICATION SYSTEM To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office. PART NO. - XX Device X - Package Environmental Options Device: HV9120 X Media Type = High Voltage Current‐Mode PWM Examples: a) HV9120NG-G b) HV9123NG-G c) HV9123NG-G-M901 14-Lead SOIC package, 53/Tube 14-Lead SOIC package, 53/Tube 14-Lead SOIC package, 2600/Reel Controller, 10 to 450V input voltage range, 49% duty cycle HV9123 = High Voltage Current‐Mode PWM Controller, 9 to 80V input voltage range, 99% duty cycle Package: NG P = 16-lead SOIC = 16-lead PDIP Environmental G = Lead (Pb)-free/ROHS-compliant package Media Type: (blank) = 45/Tube for NG package 24/Tube for P package = 2600/Reel for NG package = 2600/Reel for NG package M901 M934 Note: For media types M901 and M934, the base quantity for tap and reel was standardized at 2600/reel. Both options will result in delivery of the same number of parts/reel. DS20005519A-page 16 2016 Microchip Technology Inc. Note the following details of the code protection feature on Microchip devices: • Microchip products meet the specification contained in their particular Microchip Data Sheet. • Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the intended manner and under normal conditions. • There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data Sheets. Most likely, the person doing so is engaged in theft of intellectual property. • Microchip is willing to work with the customer who is concerned about the integrity of their code. • Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not mean that we are guaranteeing the product as “unbreakable.” Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our products. Attempts to break Microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act. Information contained in this publication regarding device applications and the like is provided only for your convenience and may be superseded by updates. It is your responsibility to ensure that your application meets with your specifications. MICROCHIP MAKES NO REPRESENTATIONS OR WARRANTIES OF ANY KIND WHETHER EXPRESS OR IMPLIED, WRITTEN OR ORAL, STATUTORY OR OTHERWISE, RELATED TO THE INFORMATION, INCLUDING BUT NOT LIMITED TO ITS CONDITION, QUALITY, PERFORMANCE, MERCHANTABILITY OR FITNESS FOR PURPOSE. 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Analog-for-the-Digital Age, BodyCom, chipKIT, chipKIT logo, CodeGuard, dsPICDEM, dsPICDEM.net, ECAN, In-Circuit Serial Programming, ICSP, Inter-Chip Connectivity, KleerNet, KleerNet logo, MiWi, motorBench, MPASM, MPF, MPLAB Certified logo, MPLIB, MPLINK, MultiTRAK, NetDetach, Omniscient Code Generation, PICDEM, PICDEM.net, PICkit, PICtail, RightTouch logo, REAL ICE, SQI, Serial Quad I/O, Total Endurance, TSHARC, USBCheck, VariSense, ViewSpan, WiperLock, Wireless DNA, and ZENA are trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. SQTP is a service mark of Microchip Technology Incorporated in the U.S.A. Silicon Storage Technology is a registered trademark of Microchip Technology Inc. in other countries. GestIC is a registered trademark of Microchip Technology Germany II GmbH & Co. KG, a subsidiary of Microchip Technology Inc., in other countries. All other trademarks mentioned herein are property of their respective companies. © 2016, Microchip Technology Incorporated, Printed in the U.S.A., All Rights Reserved. ISBN: 978-1-5224-0537-5 QUALITY MANAGEMENT SYSTEM CERTIFIED BY DNV == ISO/TS 16949 == 2016 Microchip Technology Inc. Microchip received ISO/TS-16949:2009 certification for its worldwide headquarters, design and wafer fabrication facilities in Chandler and Tempe, Arizona; Gresham, Oregon and design centers in California and India. The Company’s quality system processes and procedures are for its PIC® MCUs and dsPIC® DSCs, KEELOQ® code hopping devices, Serial EEPROMs, microperipherals, nonvolatile memory and analog products. In addition, Microchip’s quality system for the design and manufacture of development systems is ISO 9001:2000 certified. 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