BC546 ... BC549 BC546 ... BC549 IC = 100 mA hFE ~ 110/200/420 Tjmax = 150°C General Purpose NPN Transistors Universal-NPN-Transistoren VCEO = 30...65 V Ptot = 500 mW Version 2017-12-08 (1) 18 9 16 CBE Typische Anwendungen Signalverarbeitung, Schalten, Verstärken Standardausführung 1) Features General Purpose Three current gain groups Compliant to RoHS, REACH, Conflict Minerals 1) RoHS Pb EE WE 2 x 2.54 Typical Applications Signal processing, Switching, Amplification Commercial grade 1) EL V TO-92 (10D3) 1 Mechanische Daten 1) Mechanical Data ) ±0.1 (2) CBE min 12.5 4.6±0.1 4.6 2 x 1.27 Besonderheiten Universell anwendbar Drei Stromverstärkungsklassen Konform zu RoHS, REACH, Konfliktmineralien 1) (1) Taped in ammo pack (Raster 2.54) (2) On request: in bulk (Raster 1.27, suffix “BK”) 4000 5000 Weight approx. (1) Gegurtet in Ammo-Pack (Raster 2.54) (2) Auf Anfrage: Schüttgut (Raster 1.27, Suffix “BK”) 0.01 g Gewicht ca. Case material UL 94V-0 Gehäusematerial Solder & assembly conditions 260°C/10s Löt- und Einbaubedingungen MSL N/A Dimensions - Maße [mm] Recommended complementary PNP transistors Empfohlene komplementäre PNP-Transistoren BC556 ... BC559 Maximum ratings 2) Grenzwerte 2) BC546 BC547 BC548/549 Collector-Emitter-voltage – Kollektor-Emitter-Spannung E-B short VCES 80 V 50 V 30 V Collector-Emitter-voltage – Kollektor-Emitter-Spannung B open VCEO 65 V 45 V 30 V Emitter-Base-voltage – Emitter-Basis-Spannung C open VEBO 80 V 50 V 30 V Emitter-Base-voltage C open VEBO 5V Ptot 500 mW 3) IC 100 mA Peak Collector current – Kollektor-Spitzenstrom ICM 200 mA Peak Base current – Basis-Spitzenstrom IBM 200 mA - IEM 200 mA Tj TS -55...+150°C -55…+150°C Power dissipation – Verlustleistung Collector current – Kollektorstrom DC Peak Emitter current – Emitter-Spitzenstrom Junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur 1 2 3 Please note the detailed information on our website or at the beginning of the data book Bitte beachten Sie die detaillierten Hinweise auf unserer Internetseite bzw. am Anfang des Datenbuches TA = 25°C, unless otherwise specified – TA = 25°C, wenn nicht anders angegeben Valid, if leads are kept at ambient temperature at a distance of 2 mm from case Gültig wenn die Anschlussdrähte in 2 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden © Diotec Semiconductor AG http://www.diotec.com/ 1 BC546 ... BC549 Characteristics Kennwerte Tj = 25°C Min. Typ. Max. 1 DC current gain – Kollektor-Basis-Stromverhältnis ) VCE = 5 V, IC = 10 µA Group A Group B Group C hFE – – – 90 150 270 – – – VCE = 5 V, IC = 2 mA Group A Group B Group C hFE 110 200 420 – – – 220 450 800 VCE = 5 V, IC = 100 mA Group A Group B Group C hFE – – – 120 200 400 – – – Collector-Emitter cutoff current – Kollektor-Emitter-Reststrom VCE = 80 V, (B-E short) VCE = 50 V, (B-E short) VCE = 30 V, (B-E short) BC546 BC547 BC548 / BC549 ICES – – – 0.2 nA 0.2 nA 0.2 nA 15 nA 15 nA 15 nA VCE = 80 V, Tj = 125°C, (B-E short) VCE = 50 V, Tj = 125°C, (B-E short) VCE = 30 V, Tj = 125°C, (B-E short) BC546 BC547 BC548 / BC549 ICES – – – – – – 4 µA 4 µA 4 µA – – 80 mV 200 mV 250 mV 600 mV VBEsat – – 700 mV 900 mV – – VBE 580 mV – 660 mV – 700 mV 770 mV fT – 300 MHz – CCBO – 3.5 pF 6 pF CEBO – 9 pF – F – – 2 dB 1.2 dB 10 dB 4 dB Collector-Emitter saturation voltage – Kollektor-Emitter-Sättigungsspg 1) IC = 10 mA, IB = 0.5 mA IC = 100 mA, IB = 5 mA VCEsat Base-Emitter saturation voltage – Basis-Emitter-Sättigungsspannung 1) IC = 10 mA, IB = 0.5 mA IC = 100 mA, IB = 5 mA Base-Emitter-voltage – Basis-Emitter-Spannung 1) VCE = 5 V, IC = 2 mA VCE = 5 V, IC = 10 mA Gain-Bandwidth Product – Transitfrequenz VCE = 5 V, IC = 10 mA, f = 100 MHz Collector-Base Capacitance – Kollektor-Basis-Kapazität VCB = 10 V, IE =ie = 0, f = 1 MHz Emitter-Base Capacitance – Emitter-Basis-Kapazität VEB = 0.5 V, IC = ic = 0, f = 1 MHz Noise figure – Rauschzahl VCE = 5 V, IC = 200 µA, RG = 2 kΩ f = 1 kHz, Δf = 200 Hz Thermal resistance junction to ambient Wärmewiderstand Sperrschicht – Umgebung RthA < 200 K/W 2) Disclaimer: See data book page 2 or website Haftungssauschluss: Siehe Datenbuch Seite 2 oder Internet 1 2 2 Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2% Valid, if leads are kept at ambient temperature at a distance of 2 mm from case Gültig wenn die Anschlussdrähte in 2 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden http://www.diotec.com/ © Diotec Semiconductor AG