R DB3/DC34/DB4/DB6 SILICON BIDIRECTIONAL DIAC S E M I C O N D U C T O R DO-35(GLASS) FEATURES The three-layer, two-terminal, axial-lead, hermetically sealed diacs are designed specifically for triggering thyristors. They demonstrate low breakover current at breakover voltage as they withstand peak pulse current. The breakover 1.083(27.5) MIN symmetry is within three volts(DB3,DC34,DB4) or four volts(DB6). These diacs are intended for use in thyrisitors phase control , circuits for lamp dimming, universal 0.079(2.0) MAX DIA motor speed control and heat control. JF's DB3/DC34/DB4/DB6 are bi-directional triggered diode designed to operate 0.150(3.8) MAX in conjunction with Triacs and SCR's High temperature soldering guaranteed:260℃/10 seconds at terminals Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC MECHANICAL DATA 1.083(27.5) MIN JF Case: DO-35 glass case 0.020(0.52) MAX DIA Weight: Approx. 0.13 gram ABSOLUTE RATINGS(LIMITING VALUES) Dimensions in inches and (millimeters) Value Parameters Symbols Units DB3 PC Power Dissipation on Printed Circuit(L=10mm) TA=50 C ITRM Repetitive Peak on-state Current tp=10ms f=100Hz TSTG/TJ DB4 DC34 DB6 mW 150 2.0 Storage and Operating Junction Temperature 2.0 2.0 1.6 A C -40 to+125/-40 to +110 ELECTRICAL CHARACTERISTICS Value Symbols Parameters Units Test Condition DB3 VBO │+VBO││-VBO│ │+ V│ VO IBO tr IB DC34 DB4 DB6 35 40 45 56 60 70 V +4 V 10 V Breakover Voltage (Note 2 ) C=22nF(Note 2) See diagram 1 Min Typ Max Breakover Voltage Symmetry C=22nF(Note 2) See diagram 1 Max +3 I=(IBO to IF=10mA) See Diagram 1 Min 5 Output Voltage (Note 1 ) See Diagram 2 Min 5 V Breakover Current (Note1) C=22nF(Note 2) Max 100 mA See Diagram 3 Typ 1.5 ms VB=0.5 VBO max see diagram 1 Max 10 mA Dynamic Breakover Voltage (Note1) Rise Time (Note1) Leakage Current (Note1) 28 32 36 30 34 38 Notes: 1.Electrical characteristics applicable in both forward and reverse directions. 2.Connected in parallel with the devices. JINAN JINGHENG ELECTRONICS CO., LTD. 3-2 HTTP://WWW.JINGHENGGROUP.COM RATINGS AND CHARACTERISTIC CURVES DB3/DC34/DB4/DB6 DIAGRAM 1: Current-voltage characteristics DIAGRAM 2: Test circuit for output voltage +IF 10KW 220V 50Hz 10mA 500KW D.U.T VO R=20W 0.1mF DIAGRAM 3: Test circuit see diagram2 adjust R for IP=0.5A IBO IB 0.5 VBO -V +V IP 90% V VBO 10% -IF tr FIG.1-Power dissipation versus ambient temperature (maximum values) FIG.2-Relative variation of VBO versus junction temperature(typical values) P (mW) 160 VBO(TJ) VBO(TJ=25 C) 140 120 1.08 100 80 1.06 60 40 Tamb( C) 20 1.04 0 0 10 20 30 40 50 60 70 80 90 100 110 120 130 1.02 FIG.3-Peak pulse current versus pulse duration (maximum values) TJ125 ( C) 1.00 25 50 75 100 ITRM(A) 2 f=100Hz TJ initial=25 C 1 0.1 tp(ms) 0.01 10 100 1000 10000 JINAN JINGHENG ELECTRONICS CO., LTD. 3-3 HTTP://WWW.JINGHENGGROUP.COM 125