APT33GF120HR
1200V
Fast IGBT
38A
TO-258
The Fast IGBT is a new generation of high voltage power IGBTs. Using
Non-Punch Through Technology the Fast IGBT offers superior ruggedness,
fast switching speed and low Collector-Emitter On voltage.
• Low Forward Voltage Drop
• High Freq. Switching to 20KHz
• Low Tail Current
• Ultra Low Leakage Current
• Avalanche Rated
• RBSOA and SCSOA Rated
C
C
E
G
G
E
• Hermetic Package
MAXIMUM RATINGS
Symbol
All Ratings: TC = 25°C unless otherwise specified.
Parameter
APT33GF120HR
Y
R
A
N
I
M
I
L
E
R
P
UNIT
V CES
Collector-Emitter Voltage
1200
VCGR
Collector-Gate Voltage (RGE = 20KW)
1200
VGE
Gate-Emitter Voltage
±20
I C1
Continuous Collector Current @ TC = 25°C
38
I C2
Continuous Collector Current @ TC = 90°C
33
I CM
Pulsed Collector Current
I LM
RBSOA Clamped Inductive Load Current @ Rg = 11W TC = 125°C
66
EAS
Single Pulse Avalanche Energy
2
65
mJ
PD
Total Power Dissipation
205
Watts
TJ,TSTG
TL
1
76
@ TC = 25°C
Volts
Amps
-55 to 150
Operating and Storage Junction Temperature Range
300
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
°C
STATIC ELECTRICAL CHARACTERISTICS
MIN
BVCES
Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 0.8mA)
1200
VGE(TH)
VCE(ON)
I CES
I GES
Gate Threshold Voltage
(VCE = VGE, I C = 700µA, Tj = 25°C)
4.5
TYP
MAX
5.5
6.5
Collector-Emitter On Voltage (VGE = 15V, I C = I C2, Tj = 25°C)
2.7
3.2
Collector-Emitter On Voltage (VGE = 15V, I C = I C2, Tj = 125°C)
3.3
3.9
Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 25°C)
0.8
Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 125°C)
5.0
Gate-Emitter Leakage Current (VGE = ±20V, VCE = 0V)
±100
UNIT
Volts
mA
nA
Rev -
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
6-2000
Characteristic / Test Conditions
APT Website - http://www.advancedpower.com
USA
405 S.W. Columbia Street
Bend, Oregon 97702 -1035
Phone: (541) 382-8028
FAX: (541) 388-0364
EUROPE
Chemin de Magret
F-33700 Merignac - France
Phone: (33) 5 57 92 15 15
FAX: (33) 5 56 47 97 61
050-5974
Symbol
DYNAMIC CHARACTERISTICS
Symbol
Test Conditions
Characteristic
Cies
Input Capacitance
Coes
Output Capacitance
Cres
Reverse Transfer Capacitance
Qg
Total Gate Charge
Qge
Gate-Emitter Charge
Qgc
Gate-Collector ("Miller") Charge
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
APT33GF120HR
3
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
MIN
Capacitance
VGE = 0V
TYP
200
VCE = 25V
f = 1 MHz
110
Gate Charge
VGE = 15V
165
I C = I C2
100
Resistive Switching (25°C)
30
VGE = 15V
140
VCC = 0.8VCES
I C = I C2
Y
R
A
N
I
M
I
L
E
R
P
28
Turn-off Delay Time
60
Inductive Switching (150°C)
VCLAMP(Peak) = 0.66VCES
VGE = 15V
Fall Time
30
I C = I C2
Eoff
Turn-off Switching Energy
3.0
Ets
Total Switching Losses
Turn-on Delay Time
Rise Time
Turn-off Delay Time
ns
280
3.0
td(off)
ns
200
RG = 10W
R G = 10W
tr
nC
150
TJ = +150°C
td(on)
pF
20
VCC = 0.5VCES
Turn-on Delay Time
Rise Time
UNIT
1850
Turn-on Switching Energy
Eon
MAX
mJ
6.0
28
Inductive Switching (25°C)
VCLAMP(Peak) = 0.66VCES
70
VGE = 15V
ns
250
I C = I C2
Fall Time
R G = 10W
25
Ets
Total Switching Losses
TJ = +25°C
5.0
mJ
gfe
Forward Transconductance
8.5
20
S
MIN
TYP
tf
VCE = 20V, I C = I C2
THERMAL CHARACTERISTICS
050-5974
Rev -
6-2000
Symbol
Characteristic
RQJC
Junction to Case
RQJA
Junction to Ambient
MAX
UNIT
0.61
°C/W
1
Repetitive Rating: Pulse width limited by maximum junction temperature.
2
IC = IC2, RGE = 25W, L = 119µH, Tj = 25°C
3
See MIL-STD-750 Method 3471
APT Reserves the right to change, without notice, the specifications and information contained herein.
40