Central CMPD5001 High current inductive load switching diode Datasheet

Central
CMPD5001
CMPD5001S
TM
Semiconductor Corp.
HIGH CURRENT
INDUCTIVE LOAD
SWITCHING DIODE
DESCRIPTION:
The CENTRAL SEMICONDUCTOR
CMPD5001 series types are silicon switching
diodes manufactured by the epitaxial planar
process, designed for switching inductive load
applications requiring extremely high current
capability.
SOT-23 CASE
The following configurations are available:
CMPD5001
CMPD5001S
SINGLE
DUAL, IN SERIES
MARKING CODE: DA2
MARKING CODE: D49
MAXIMUM RATINGS (TA=25oC)
Continuous Reverse Voltage
Continuous Forward Current
Peak Repetitive Forward Current
Peak Repetitive Reverse Current
Forward Surge Current, tp=1 µs
Forward Surge Current, tp=1 s
Power Dissipation
Operating and Storage
Junction Temperature
Thermal Resistance
SYMBOL
VR
IF
IFRM
IRRM
IFSM
IFSM
PD
UNITS
V
mA
mA
mA
mA
mA
mW
120
400
800
600
6000
1500
350
TJ,Tstg
ΘJA
oC
oC/W
-65 to +150
357
ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted)
SYMBOL
BVR
IR
IR
VF
VF
VF
VF
TEST CONDITIONS
IR=1.0mA
VR=90V
VR=90V, TA=150oC
IF=10mA
IF=50mA
IF=100mA
IF=200mA
MIN
120
140
MAX
175
100
100
0.75
0.84
0.90
1.00
UNITS
V
nA
µA
V
V
V
V
SYMBOL
VF
CT
trr
trr
TEST CONDITIONS
IF=400mA
VR=0, f=1 MHz
IF=IR=30mA, RECOV. TO 1.0mA, RL=100Ω
IF=IR=10mA, RECOV. TO 1.0mA, RL=100Ω
MIN
MAX
1.25
35
60
50
UNITS
V
pF
ns
ns
All dimensions in inches (mm).
NO
CONNECTION
A
A2
C1
A1, C2
C
CMPD5001
CMPD5001S
R2
141
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