LRC MMBT2907LT1 General purpose transistor(pnp silicon) Datasheet

LESHAN RADIO COMPANY, LTD.
General Purpose Transistor
PNP Silicon
3
COLLECTOR
MMBT2907LT1
MMBT2907ALT1
1
BASE
2
EMITTER
MAXIMUM RATINGS
Rating
Symbol
Value
2907 2907A
V
CEO
Collector–Base Voltage
V
CBO
–60
Vdc
Emitter–Base Voltage
V
EBO
–5.0
Vdc
–600
mAdc
IC
–60
Unit
Collector–Emitter Voltage
Collector Current — Continuous
–40
3
1
2
Vdc
CASE 318–08, STYLE 6
SOT–23 (TO–236AB)
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board, (1)
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
Max
Unit
PD
225
mW
RθJA
PD
1.8
556
300
mW/°C
°C/W
mW
RθJA
TJ , Tstg
2.4
417
–55 to +150
mW/°C
°C/W
°C
DEVICE MARKING
MMBT2907LT1 = M2B, MMBT2907ALT1 = 2F
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Max
–40
–60
–60
–5.0
—
—
—
—
—
–50
—
—
–0.020
–0.010
—
—
—
–20
–10
–50
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage(3)
V
MMBT2907
MMBT2907A
Collector–Emitter Breakdown Voltage(I C = –10 µAdc, I E = 0)
Emitter–Base Breakdown Voltage(I E = –10 µAdc, I C = 0)
Collector Cutoff Current( V CB = –30Vdc, I BE(OFF) = –0.5Vdc)
Collector Cutoff Current
( V CB = –50Vdc, I E = 0)
MMBT2907
MMBT2907A
( V CB = –50Vdc, I E = 0, T A =125°C )
V (BR)CBO
V (BR)EBO
I CEX
I CBO
MMBT2907
MMBT2907A
Base Current( V CE = –30Vdc, V EB(off)= –0.5Vdc )
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
3. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%.
Vdc
(BR)CEO
(I C = –10 mAdc, I B = 0)
IB
Vdc
Vdc
nAdc
µAdc
nAdc
O8–1/4
LESHAN RADIO COMPANY, LTD.
MMBT2907LT1 MMBT2907ALT1
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
Unit
35
75
50
100
75
100
––
100
30
50
––
––
––
––
––
––
––
300
––
––
––
––
–0.4
–1.6
––
––
–1.3
–2.6
200
––
MHz
––
8.0
pF
––
30
pF
—
—
—
—
—
—
45
10
40
30
80
100
ON CHARACTERISTICS
DC Current Gain
(I C = –0.1mAdc, V CE = –10 Vdc)
hFE
––
MMBT2907
MMBT2907A
MMBT2907
MMBT2907A
MMBT2907
MMBT2907A
MMBT2907
MMBT2907A
MMBT2907
MMBT2907A
(I C =–1.0mAdc, V CE = –10 Vdc)
(I C = –10 mAdc, V CE = –10Vdc)
(I C = –150mAdc, V CE =–10 Vdc)(3)
(I C = –500mAdc, V CE =–10 Vdc)(3)
Collector–Emitter Saturation Voltage(3)
(I C = –150mAdc, I B = –15 mAdc)
(I C = –500 mAdc, I B = –50 mAdc)
Base–Emitter Saturation Voltage(3)
(I C = –150mAdc, I B = –15 mAdc)
(I C = –500mAdc, I B = –50 mAdc)
VCE(sat)
V
Vdc
Vdc
BE(sat)
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product(3),(4)
(I C = –50mAdc, V CE= –20Vdc, f = 100MHz)
Output Capacitance
(V CB = –10 Vdc, I E = 0, f = 1.0 MHz)
Input Capacitance
f
T
C
obo
C
ibo
(V EB = –2.0Vdc, I C = 0, f = 1.0 MHz)
SWITCHING CHARACTERISTICS
Turn–On Time
Delay Time
Rise Time
Fall Time
Storage Time
Turn–Off Time
(V CC = –30 Vdc,
I C = –150 mAdc, I B1 = –15 mAdc)
t on
td
tr
(V CC = –6.0 Vdc,
I C = –150 mAdc,I B1 = I B2 = 15 mAdc)
tf
ts
t off
ns
ns
3. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%.
4. f T is defined as the frequency at which |h f e | extrapolates to unity.
INPUT
INPUT
Z o = 50 Ω
Z O= 50 Ω
PRF = 150 PPS
–30 V
PRF = 150 PPS
RISE TIME <2.0 ns
200
P.W. <200 ns
RISE TIME <2.0 ns
P.W. < 200 ns
1.0 k
TO OSCILLOSCOPE
RISE TIME < 5.0 ns
0
50
–16 V
200 ns
Figure 1. Delay and Rise Time Test Circuit
+15 V
–6.0 V
1.0 k
37
1.0 k
TO OSCILLOSCOPE
0
RISE TIME < 5.0 ns
50
–30 V
1N916
200 ns
Figure 2. Storage and Fall Time Test Circuit
O8–2/4
LESHAN RADIO COMPANY, LTD.
MMBT2907LT1 MMBT2907ALT1
TYPICAL CHARACTERISTICS
h FE , NORMALIZED CURRENT GAIN
3.0
V CE = –1.0 V
V CE = –10 V
2.0
T J = 125°C
25°C
1.0
–55°C
0.7
0.5
0.3
0.2
–0.1
–0.2
–0.3
–0.5 –0.7 –1.0
–2.0
–3.0
–5.0 –7.0
–10
–20
–30
–50
–70 –100
–200
–300
–500
I C , COLLECTOR CURREN (mA)
Figure 3. DC Current Gain
V CE , COLLECTOR– EMITTER
VOLTAGE (VOLTS)
–1.0
–0.8
I C = –1.0 mA
–100 mA
–10 mA
–500 mA
–0.6
–0.4
–0.2
0
–0.005–0.01
–0.02 –0.03 –0.05 –0.7 –0.1
–0.2 –0.3
–0.5 –0.7 –1.0
–2.0 –3.0
–5.0 –7.0 –10
–20
–30
–50
I B , BASE CURRENT (mA)
Figure 4. Collector Saturation Region
300
300
200
100
I C /I B = 10
T J = 25°C
tr
70
50
30
20
V CC = –30 V
I C /I B = 10
100
t, TIME (ns)
t, TIME (ns)
200
V CC = –30 V
70
50
I B1 = I B2
T J = 25°C
tf
30
20
t ’ s = t s – 1/8 t f
t d @ V BE(off) = 0 V
10
10
7.0
7.0
2.0 V
5.0
5.0
3.0
3.0
–5.0–7.0 –10
–20 –30
–50 –70 –100
–200 –300 –500
–5.0–7.0 –10
–20 –30
–50 –70 –100
–200 –300 –500
I C , COLLECTOR CURRENT
I C , COLLECTOR CURRENT (mA)
Figure 5. Turn–On Time
Figure 6. Turn–Off Time
O8–3/4
LESHAN RADIO COMPANY, LTD.
MMBT2907LT1 MMBT2907ALT1
TYPICAL SMALL–SIGNAL CHARACTERISTICS
NOISE FIGURE
V CE = 10 Vdc, T A = 25°C
10
10
8.0
8.0
–50 µA, R S= 2.7 k Ω
–100 µA, R S= 1.6 k Ω
4.0
RS=OPTIMUM SOURCE RESISTANCE
2.0
0
0.05 0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
4.0
2.0
100
50
100
200
500
1.0 k
2.0 k
5.0 k
10 k
20 k
f, FREQUENCY (kHz)
R S, SOURCE RESISTANCE ( Ω )
Figure 7. Frequency Effects
Figure 8. Source Resistance Effects
30
C eb
20
C, CAPACITANCE(pF)
I C = –50µA
–100 µA
–500 µA
–1.0 mA
6.0
0
0.01 0.02
10
7.0
C cb
5.0
3.0
2.0
–0.1
NF, NOISE FIGURE (dB)
I C = –1.0 mA, R S= 430 Ω
–500 µA, R S= 560 Ω
6.0
–0.2 –0.3 –0.5
–1.0
–2.0 –3.0
–5.0
–10
f T , CURRENT– GAIN — BANDWIDTH
PRODUCT (MHz)
NF, NOISE FIGURE (dB)
f=1.0 kHz
–20 –30
50 k
400
300
200
100
80
VCE=–20 V
T J= 25°C
60
40
30
20
–1.0
–2.0
–5.0
–10
–20
–50
–100 –200
–500 –1000
REVERSE VOLTAGE (VOLTS)
I C , COLLECTOR CURRENT (mA)
Figure 9. Capacitances
Figure 10. Current–Gain — Bandwidth Product
–1.0
+0.5
T J = 25°C
COEFFICIENT (mV/ ° C)
V, VOLTAGE (VOLTS)
0
V BE(sat) @ I C /I B = 10
–0.8
V BE(on) @ V CE = –10 V
–0.6
– 0.4
–0.2
V CE(sat) @ I C /I B = 10
0
–0.1 –0.2
R θVC for V CE(sat)
–0.5
– 1.0
–1.5
R θVB for V BE
–2.0
–2.5
–0.5 –1.0 –2.0
–5.0 –10
–20
–50 –100 –200
–500
–0.1 –0.2
–0.5 –1.0 –2.0
–5.0 –10
–20
–50 –100 –200
I C , COLLECTOR CURRENT (mA)
I C , COLLECTOR CURRENT (mA)
Figure 11. “On” Voltage
Figure 12. Temperature Coefficients
–500
O8–4/4