Ordering number : ENN7040 MCH6608 N-Channel Silicon MOSFET MCH6608 Ultrahigh-Speed Switching Applications Preliminary • 0.25 2.1 • Low ON-resistance. unit : mm Ultrahigh-speed switching. 2173A 2.5V drive. Composite type with 2 MOSFETs contained in a single package, facilitaing high-density mounting. [MCH6608] 0.25 • Package Dimensions 0.3 4 5 6 3 2 0.65 1 0.15 1.6 • 0.07 Features 6 5 4 1 2 3 1 : Source1 2 : Gate1 3 : Drain2 4 : Source2 5 : Gate2 6 : Drain1 0.85 2.0 Specifications SANYO : MCPH6 Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 30 Gate-to-Source Voltage VGSS ±10 V ID 0.65 A Drain Current (DC) Drain Current (Pulse) IDP PD Allowable Power Dissipation V PW≤10µs, duty cycle≤1% 2.6 A Mounted on a ceramic board (900mm 2✕0.8mm)1unit 0.8 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Symbol Drain-to-Source Breakdown Voltage Ratings min typ max Unit ID=1mA, VGS=0 VDS=30V, VGS=0 VGS=±8V, VDS=0 30 VDS=10V, ID=100µA VDS=10V, ID=150mA 0.4 Forward Transfer Admittance VGS(off) yfs RDS(on)1 RDS(on)2 ID=150mA, VGS=4V ID=80mA, VGS=2.5V 0.9 1.2 Ω Static Drain-to-Source On-State Resistance 1.2 1.7 Ω RDS(on)3 ID=10mA, VGS=1.5V 2.6 5.2 Ω Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage V(BR)DSS Conditions IDSS IGSS 400 Marking : FH V 10 µA ±10 µA 1.3 560 V mS Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 82201 TS IM TA-2463 No.7040-1/4 MCH6608 Continued from preceding page. Parameter Symbol Ratings Conditions min typ Unit max Input Capacitance Ciss pF Coss VDS=10V, f=1MHz VDS=10V, f=1MHz 30 Output Capacitance 15 pF Reverse Transfer Capacitance Crss VDS=10V, f=1MHz 10 pF Turn-ON Delay Time td(on) See specified Test Circuit. 32 ns Rise Time tr td(off) See specified Test Circuit. 110 ns See specified Test Circuit. 250 ns tf See specified Test Circuit. 160 ns Qg VDS=10V, VGS=10V, ID=300mA 2.34 nC Gate-to-Source Charge Qgs nC Qgd VDS=10V, VGS=10V, ID=300mA VDS=10V, VGS=10V, ID=300mA 0.38 Gate-to-Drain “Miller” Charge Diode Forward Voltage VSD IS=300mA, VGS=0 Turn-OFF Delay Time Fall Time Total Gate Charge Switching Time Test Circuit 0.45 nC 0.8 1.2 V Electrical Connection VDD=15V VIN 4V 0V D1 G2 S2 S1 G1 D2 ID=150mA RL=100Ω VOUT VIN D PW=10µs D.C.≤1% G MCH6608 50Ω Drain Current, ID -- A V 3.0 V 2.5 2.0 V 0.20 0.15 VGS=1.5V 0.10 C 25° C 0.5 0.05 0.4 0.3 0.2 0.1 0 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 Drain-to-Source Voltage, VDS -- V 0.9 1.0 0 Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 150mA ID=80mA 1.0 0.5 0 2 3 4 5 6 7 8 Gate-to-Source Voltage, VGS -- V 9 10 IT00226 2.5 2.0 IT00225 VGS=4V 7 2.0 1 1.5 RDS(on) -- ID 10 2.5 0 1.0 Gate-to-Source Voltage, VGS -- V Ta=25°C 1.5 0.5 IT00224 RDS(on) -- VGS 3.0 Static Drain-to-Source On-State Resistance, RDS(on) -- Ω Ta= --25 ° 3.5 V 4.0V VDS=10V 6.0V 0.25 ID -- VGS 0.6 C ID -- VDS 0.30 Drain Current, ID -- A S 75° P.G 5 3 2 Ta=75°C 1.0 7 --25°C 25°C 5 3 2 0.1 0.01 2 3 5 7 0.1 2 Drain Current, ID -- A 3 5 7 1.0 IT00227 No.7040-2/4 MCH6608 RDS(on) -- ID 10 5 3 2 Ta=75°C 1.0 --25°C 25°C 7 5 3 2 0.1 0.01 2 3 5 7 2 0.1 3 5 Drain Current, ID -- A V =2.5 , VGS A m 0 I D=8 =4.0V A, V GS m 0 5 I D=1 0.5 0 --60 --40 --20 0 20 40 60 80 100 120 140 Ambient Temperature, Ta -- °C 0.1 7 5 3 2 0.8 1.0 1.2 Diode Forward Voltage, VSD -- V 3 2 1.0 °C 7 --25 Ta= 5 °C 2 25 2 3 5 Coss 10 Crss 7 5 3 2 3 5 5 3 td(off) 2 tf 7 1.0 IT00231 tr 100 7 5 td(on) 3 2 2 3 5 7 0.1 2 3 Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V 2 2 0.1 VDD=15V VGS=4V 5 IT00233 VGS -- Qg 10 Ciss 7 SW Time -- ID VDS=10V ID=300mA 9 3 75°C 3 f=1MHz 5 Ciss, Coss, Crss -- pF 5 IT00232 7 3 IT00229 VDS=10V 10 0.01 1.4 Ciss, Coss, Crss -- VDS 100 2 0.01 7 0.01 0.6 7 Drain Current, ID -- A Switching Time, SW Time -- ns Ta=7 5°C 25°C --25°C 3 0.4 5 7 1000 5 0.2 3 IT00230 7 0 2 yfs -- ID 0.1 0.01 160 VGS=0 2 --25°C 25°C 2 Drain Current, ID -- A IF -- VSD 1.0 Ta=75°C 3 10 2.0 1.0 5 IT00228 2.5 1.5 7 1.0 0.001 1.0 Forward Transfer Admittance, yfs -- S Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 7 RDS(on) -- Ta 3.0 Forward Current, IF -- A VGS=1.5V Static Drain-to-Source On-State Resistance, RDS(on) -- Ω Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 7 RDS(on) -- ID 10 VGS=2.5V 8 7 6 5 4 3 2 1 1.0 0 0 5 10 15 20 25 Drain-to-Source Voltage, VDS -- V 30 IT00234 0 0.5 1.0 1.5 Total Gate Charge, Qg -- nC 2.0 2.5 IT00235 No.7040-3/4 MCH6608 ASO 5 IDP=2.6A <10µs 2 Allowable Power Dissipation, PD -- W 3 1m Drain Current, ID -- A s 1.0 7 5 10 ID=0.65A ms DC 3 10 0m op s era 2 tio n 0.1 Operation in this area is limited by RDS(on). 7 5 3 2 Ta=25°C Single pulse Mounted on a ceramic board(900mm2✕0.8mm)1unit 0.01 0.1 2 3 5 7 1.0 2 3 PD -- Ta 1.0 5 7 10 Drain-to-Source Voltage, VDS -- V 2 0.8 M ou nt 0.6 ed on ac er am ic bo ar 0.4 d( 90 0m m2 ✕0 .8m 0.2 m )1 un it 0 3 5 IT03638 0 20 40 60 80 100 140 120 Ambient Temperature, Ta -- °C 160 IT03637 Note on usage : Since the MCH6608 is designed for high-speed switching applications, please avoid using this device in the vicinity of highly charged objects. Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of August, 2001. Specifications and information herein are subject to change without notice. PS No.7040-4/4