MMT10B350T3 Preferred Devices Thyristor Surge Protectors High Voltage Bidirectional TSPD These Thyristor Surge Protective devices (TSPD) prevent overvoltage damage to sensitive circuits by lightning, induction and power line crossings. They are breakover−triggered crowbar protectors. Turn−off occurs when the surge current falls below the holding current value. Secondary protection applications for electronic telecom equipment at customer premises. http://onsemi.com BIDIRECTIONAL TSPD ( ) 100 AMP SURGE, 350 VOLTS Features • High Surge Current Capability: 100 Amps 10 x 1000 msec, for • • • • • • • • Controlled Temperature Environments The MMT10B350T3 Series is used to help equipment meet various regulatory requirements including: Bellcore 1089, ITU K.20 & K.21, IEC 950, UL 1459 & 1950 and FCC Part 68. Bidirectional Protection in a Single Device Little Change of Voltage Limit with Transient Amplitude or Rate Freedom from Wearout Mechanisms Present in Non−Semiconductor Devices Fail−Safe, Shorts When Overstressed, Preventing Continued Unprotected Operation Surface Mount Technology (SMT) Indicates UL Recognized − File #E210057 Pb−Free Package is Available MT1 MT2 SMB (No Polarity) (Essentially JEDEC DO−214AA) CASE 403C MARKING DIAGRAM MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Off−State Voltage − Maximum Maximum Pulse Surge Short Circuit Current Non−Repetitive Double Exponential Decay Waveform (Notes 1 and 2) 10 x 1000 msec −25°C Initial Temperature 2 x 10 msec 10 x 160 msec 10 x 700 msec Maximum Non−Repetitive Rate of Change of On−State Current Double Exponential Waveform, R = 2.4 W, L = 2.0 mH, C = 2.0 mF, Ipk = 110 A Symbol Value Unit VDM 300 V AYWW RPDM G G A(pk) IPPS1 IPPS2 IPPS3 IPPS4 "100 "500 "200 "180 di/dt "100 A = Assembly Location Y = Year WW = Work Week RPDM = Device Code G = Pb−Free Package (Note: Microdot may be in either location) A/ms Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. Allow cooling before testing second polarity. 2. Measured under pulse conditions to reduce heating. ORDERING INFORMATION Device Package Shipping † MMT10B350T3 SMB 2500/Tape & Reel MMT10B350T3G SMB 2500/Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Preferred devices are recommended choices for future use and best overall value. © Semiconductor Components Industries, LLC, 2006 January, 2006 − Rev. 2 1 Publication Order Number: MMT10B350T3/D MMT10B350T3 THERMAL CHARACTERISTICS Symbol Max Unit Operating Temperature Range Blocking or Conducting State Characteristic TJ1 −40 to + 125 °C Overload Junction Temperature − Maximum Conducting State Only TJ2 + 175 °C Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds TL 260 °C ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Devices are bidirectional. All electrical parameters apply to forward and reverse polarities. Characteristics Symbol Min Typ Max − − − − 400 412 − − 400 − − 412 dV(BO)/dTJ − 0.12 − V/°C V(BR) − 350 − V Off State Current (VD1 = 50 V) Both polarities Off State Current (VD2 = VDM) Both polarities ID1 ID2 − − − − 2.0 5.0 mA On−State Voltage (IT = 1.0 A) (PW ≤ 300 ms, Duty Cycle ≤ 2%) (Note 3) VT − 1.82 5.0 V Breakover Current (f = 60 Hz, VDM = 1000 V(rms), RS = 1.0 kW) Both polarities IBO − 475 − mA Holding Current (Both polarities) (Note 3) VS = 500 V; IT (Initiating Current) = "1.0 A IH 150 300 − mA dv/dt 2000 − − V/ms CO − − 40 81 − 85 pF Breakover Voltage (Both polarities) (dv/dt = 100 V/ms, ISC = 1.0 A, Vdc = 1000 V) (+65°C) V(BO) Breakover Voltage (Both polarities) (f = 60 Hz, ISC = 1.0 A(rms), VOC = 1000 V(rms), RI = 1.0 kW, t = 0.5 cycle) (Note 3) (+65°C) V(BO) Breakover Voltage Temperature Coefficient Breakdown Voltage (I(BR) = 1.0 mA) Both polarities Critical Rate of Rise of Off−State Voltage (Linear waveform, VD = Rated VBR, TJ = 25°C) Capacitance (f = 1.0 MHz, 50 Vdc, 1.0 V rms Signal) Capacitance (f = 1.0 MHz, 2.0 Vdc, 1.0 V rms Signal) Unit V V 3. Measured under pulse conditions to reduce heating. Voltage Current Characteristic of TSPD (Bidirectional Device) + Current Symbol Parameter ID1, ID2 Off State Leakage Current VD1, VD2 Off State Blocking Voltage VBR Breakdown Voltage VBO Breakover Voltage IBO Breakover Current IH Holding Current VTM On State Voltage VTM V(BO) IH ID1 I(BO) ID2 + Voltage VD1 http://onsemi.com 2 VD2 V(BR) MMT10B350T3 VBR, BREAKDOWN VOLTAGE (VOLTS) ID1, OFF−STATE CURRENT (mA) 100 VD1 = 50V 10 1.0 0.1 0.01 0.001 −60 −40 −20 0 20 40 60 80 TEMPERATURE (°C) 100 120 140 400 390 380 370 360 350 340 330 320 −60 −40 −20 440 600 550 430 420 410 400 390 500 450 400 350 300 250 200 150 380 −60 −40 −20 20 40 0 60 80 TEMPERATURE (°C) 100 −40 −20 100 120 140 Figure 3. Maximum Breakover Voltage versus Temperature 0 20 40 60 80 TEMPERATURE (°C) 100 120 Figure 4. Typical Holding Current versus Temperature 420 tr = rise time to peak value tf = decay time to half value Peak Value 100 400 380 CURRENT (A) IPP − PEAK PULSE CURRENT − %IPP 100 120 140 Figure 2. Typical Breakdown Voltage versus Temperature IH, Holding Current (mA) VBO, BREAKOVER VOLTAGE (VOLTS) Figure 1. Typical Off−State Current versus Temperature 0 20 40 60 80 TEMPERATURE (°C) Half Value 50 360 340 320 300 280 260 240 0 0 tr 220 10 tf 100 1000 100000 TIME (sec) TIME (ms) Figure 5. Exponential Decay Pulse Waveform Figure 6. Peak Surge On−State Current versus Surge Current Duration, Sinusoidal Waveform http://onsemi.com 3 MMT10B350T3 TIP OUTSIDE PLANT GND TELECOM EQUIPMENT GND TELECOM EQUIPMENT RING PPTC* TIP OUTSIDE PLANT RING PPTC* *Polymeric PTC (positive temperature coefficient) overcurrent protection device HEAT COIL TIP OUTSIDE PLANT GND RING HEAT COIL http://onsemi.com 4 TELECOM EQUIPMENT MMT10B350T3 PACKAGE DIMENSIONS SMB CASE 403C−01 ISSUE A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. D DIMENSION SHALL BE MEASURED WITHIN DIMENSION P. S A D INCHES DIM MIN MAX A 0.160 0.180 B 0.130 0.150 C 0.075 0.095 D 0.077 0.083 H 0.0020 0.0060 J 0.006 0.012 K 0.030 0.050 P 0.020 REF S 0.205 0.220 B MILLIMETERS MIN MAX 4.06 4.57 3.30 3.81 1.90 2.41 1.96 2.11 0.051 0.152 0.15 0.30 0.76 1.27 0.51 REF 5.21 5.59 C K P J H SOLDERING FOOTPRINT* 2.261 0.089 2.743 0.108 2.159 0.085 SCALE 8:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. 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