Spec. No. : C973J4 Issued Date : 2014.06.13 Revised Date : 2014.10.02 Page No. : 1/13 CYStech Electronics Corp. N & P-Channel Enhancement Mode Power MOSFET MTBA6C12J4 Features BVDSS ID @ VGS=10V(-10V) RDSON(typ.) @VGS=(-)10V RDSON(typ.) @VGS=(-)4.5V N-CH 120V 2A 176 mΩ 183 mΩ P-CH -120V -1.6A 246 mΩ 276 mΩ • Low Gate Charge • Simple Drive Requirement • RoHS compliant & Halogen-free package Equivalent Circuit Outline MTBA6C12J4 TO-252-4L G：Gate D：Drain S：Source Absolute Maximum Ratings (TA=25°C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TC=25°C, VGS=10V(-10V) Continuous Drain Current @ TC=100°C, VGS=10V(-10V) Continuous Drain Current @ TA=25°C, VGS=10V(-10V) Continuous Drain Current @ TA=70°C, VGS=10V(-10V) Pulsed Drain Current *1 Total Power Dissipation (TC=25℃) Total Power Dissipation (TC=100℃) Total Power Dissipation (TA=25℃) Total Power Dissipation (TA=70℃) Operating Junction and Storage Temperature Range MTBA6C12J4 Symbol VDS VGS (Note1) (Note1) (Note4) ID (Note4) (Note3) (Note1) (Note1) (Note2) (Note2) IDM PD PDSM Tj, Tstg Limits N-channel P-channel 120 ±20 8.0 5.6 2.0 1.6 10 -120 ±20 -6.8 -4.8 -1.6 -1.3 -8 25 12.5 2.4 1.7 -55~+175 Unit V A W °C CYStek Product Specification CYStech Electronics Corp. Spec. No. : C973J4 Issued Date : 2014.06.13 Revised Date : 2014.10.02 Page No. : 2/13 Thermal Data Parameter Symbol Value Unit Thermal Resistance, Junction-to-case, max Rth,j-c 6 Thermal Resistance, Junction-to-ambient, max (Note2) 62.5 °C/W Rth,j-a Thermal Resistance, Junction-to-ambient, max (Note4) 90 Note : 1.The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. 2. The value of RθJA is measured with the device mounted on 1 in²FR-4 board with 2 oz. copper, in a still air environment with TA=25°C. The power dissipation PDSM is based on RθJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user’s specific board design. . 3 Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and low duty cycles to keep initial TJ=25°C. 4. When mounted on the minimum pad size recommended (PCB mount), t≤10s. N-CH Characteristics (Tc=25°C, unless otherwise specified) Symbol Static BVDSS ∆BVDSS/∆Tj VGS(th) IGSS IDSS RDS(ON) *1 GFS *1 Dynamic Qg *1 Qgs *1 Qgd *1 td(ON) *1 tr *1 td(OFF) *1 tf *1 Ciss Coss Crss Source-Drain Diode IS *1 ISM *2 VSD *1 trr * Qrr * Min. Typ. Max. Unit Test Conditions 120 1.0 - 0.1 1.4 176 183 6.3 2.5 ±100 1 10 230 250 - V V/°C V nA VGS=0V, ID=250μA Reference to 25°C, ID=250μA VDS=VGS, ID=250μA VGS=±20V, VDS=0V VDS=96V, VGS=0V VDS=96V, VGS=0V, Tj=55°C VGS=10V, ID=2A VGS=4.5V, ID=1.5A VDS=10V, ID=2A - 8 0.9 2.3 3.4 16.2 13.4 25.4 298 29 14 - - 0.79 22 25 2 10 1.3 - μA mΩ S nC VDS=96V, ID=2A, VGS=10V ns VDS=75V, ID=1A, VGS=10V, RG=6Ω pF VDS=25V, VGS=0V, f=1MHz A V ns nC IS=2A, VGS=0V IF=2A, dIF/dt=100A/μs Note : *1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% *2.Pulse width limited by maximum junction temperature. MTBA6C12J4 CYStek Product Specification Spec. No. : C973J4 Issued Date : 2014.06.13 Revised Date : 2014.10.02 Page No. : 3/13 CYStech Electronics Corp. P-CH Characteristics (Tc=25°C, unless otherwise specified) Symbol Static BVDSS ∆BVDSS/∆Tj VGS(th) IGSS IDSS RDS(ON) *1 GFS *1 Dynamic Qg *1 Qgs *1 Qgd *1 td(ON) *1 tr *1 td(OFF) *1 tf *1 Ciss Coss Crss Source-Drain Diode IS *1 ISM *2 VSD *1 trr * Qrr * Min. Typ. Max. Unit Test Conditions -120 -1.0 - -0.09 -1.5 246 276 4.0 -2.5 ±100 -1 -10 310 340 - V V/°C V nA VGS=0V, ID=-250μA Reference to 25°C, ID=-250μA VDS=VGS, ID=-250μA VGS=±20V, VDS=0V VDS=-96V, VGS=0V VDS=-96V, VGS=0V, Tj=55°C VGS=-10V, ID=-1.5A VGS=-4.5V, ID=-1.0A VDS=-10V, ID=-1.5A - 13.5 1.8 3.2 7 17 40 49 695 48 23 - - -0.76 19 19 -1.6 -8 -1.3 - μA mΩ S nC VDS=-96V, ID=-1.5A, VGS=-10V ns VDS=-75V, ID=-1A, VGS=-10V, RG=6Ω pF VDS=-25V, VGS=0V, f=1MHz A V ns nC IS=-1.5A, VGS=0V IF=1.5A, dIF/dt=100A/μs Note : *1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% *2.Pulse width limited by maximum junction temperature. Ordering Information Device MTBA6C12J4-0-T3-G Package TO-252 (RoHS compliant & Halogen-free package) Shipping 2500 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T3 : 2500 pcs / tape & reel, 13” reel Product rank, zero for no rank products Product name MTBA6C12J4 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C973J4 Issued Date : 2014.06.13 Revised Date : 2014.10.02 Page No. : 4/13 Q1, N-CH Typical Characteristics Brekdown Voltage vs Ambient Temperature Typical Output Characteristics 1.4 BVDSS, Normalized Drain-Source Breakdown Voltage 10 ID, Drain Current(A) 8 6 10V, 9V, 8V, 7V, 6V, 5V,4V,3.5V,3V 4 VGS=2.5V 2 1.2 1 0.8 ID=250μA, VGS=0V 0.6 0.4 0 0 1 2 3 4 VDS, Drain-Source Voltage(V) -75 -50 -25 5 Reverse Drain Current vs Source-Drain Voltage Static Drain-Source On-State resistance vs Drain Current 1.2 VGS=2.5V VGS=3V VSD, Source-Drain Voltage(V) RDS(ON), Static Drain-Source On-State Resistance(mΩ) 1000 100 VGS=4.5V 10V 1 Tj=25°C 0.8 0.6 Tj=150°C 0.4 0.2 10 0.01 0.1 1 ID, Drain Current(A) 10 2 4 6 8 IDR , Reverse Drain Current(A) 10 Drain-Source On-State Resistance vs Junction Tempearture 2.8 500 450 0 100 Static Drain-Source On-State Resistance vs Gate-Source Voltage ID=2A 2.4 400 R DS(ON), Normalized Static DrainSource On-State Resistance R DS(ON) , Static Drain-Source OnState Resistance(mΩ) 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) 350 300 2 VGS=4.5V, ID=1.5A, RDS(ON) @Tj=25°C :183mΩ 1.6 250 200 1.2 150 100 VGS=10V, ID=2A 0.8 50 RDS(ON) @Tj=25°C : 176mΩ typ. 0.4 0 0 MTBA6C12J4 2 4 6 8 VGS, Gate-Source Voltage(V) 10 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) CYStek Product Specification Spec. No. : C973J4 Issued Date : 2014.06.13 Revised Date : 2014.10.02 Page No. : 5/13 CYStech Electronics Corp. Q1, N-CH Typical Characteristics(Cont.) Threshold Voltage vs Junction Tempearture Capacitance vs Drain-to-Source Voltage VGS(th), Normalized Threshold Voltage 1000 Capacitance---(pF) Ciss 100 C oss Crss 1.4 1.2 ID=1mA 1 0.8 ID=250μA 0.6 0.4 10 0.1 1 10 VDS, Drain-Source Voltage(V) -75 -50 -25 100 50 75 100 125 150 175 Gate Charge Characteristics 100 10 VDS=96V VGS, Gate-Source Voltage(V) GFS , Forward Transfer Admittance(S) 25 Tj, Junction Temperature(°C) Forward Transfer Admittance vs Drain Current 10 1 VDS=10V Pulsed Ta=25°C 0.1 0.01 0.001 8 VDS=60V 6 4 2 ID=2A 0 0.01 0.1 1 ID, Drain Current(A) 0 10 2 10 4 6 8 Qg, Total Gate Charge(nC) Maximum Drain Current vs Junction Temperature Maximum Safe Operating Area 2.5 10 ID, Maximum Drain Current(A) 100 ID, Drain Current(A) 0 RDS(ON) Limit 100μ s 1 1ms 10ms 100ms 0.1 TA=25°C, Tj=150°C, VGS=10V RθJA=90°C/W,Single Pulse 1s DC MTBA6C12J4 1 10 100 VDS, Drain-Source Voltage(V) 1.5 1 0.5 TA=25°C, Tj(max)=150°C,VGS=10V RθJA=90°C/W 0 0.01 0.1 2 1000 25 50 75 100 125 150 TJ, Junction Temperature(°C) 175 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C973J4 Issued Date : 2014.06.13 Revised Date : 2014.10.02 Page No. : 6/13 Q1, N-CH Typical Characteristics(Cont.) Typical Transfer Characteristics 10 50 Single Pulse Power Rating, Junction to Ambient (Note on page 2) VDS=10V ID, Drain Current (A) 8 TJ(MAX) =150°C TA=25°C θ JA=90°C/W 40 Power (W) 6 4 2 30 20 10 0 0 1 2 3 4 VGS, Gate-Source Voltage(V) 5 0 0.001 0.01 0.1 1 Pulse Width(s) 10 100 Transient Thermal Response Curves 1 r(t), Normalized EffectiveTransient Thermal Resistance D=0.5 0.2 0.1 1.Rθ JA(t)=r(t)*Rθ JA 2.Duty Factor, D=t1/t2 3.TJM-TA=PDM*Rθ JA(t) 4.Rθ JA=90 °C/W 0.1 0.05 0.02 0.01 0.01 Single Pulse 0.001 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 t1, Square Wave Pulse Duration(s) 1.E+01 1.E+02 1.E+03 Maximum Drain Current vs Case Temperature ID, Maximum Drain Current(A) 8 7 6 5 4 3 2 Tj(max)=175°C,VGS=4.5V RθJC=6°C/W 1 0 25 50 75 100 125 150 175 200 TC , Case Temperature(°C) MTBA6C12J4 CYStek Product Specification Spec. No. : C973J4 Issued Date : 2014.06.13 Revised Date : 2014.10.02 Page No. : 7/13 CYStech Electronics Corp. Q2, P-CH Typical Characteristics Brekdown Voltage vs Ambient Temperature Typical Output Characteristics 1.4 -10V -9V -8V -7V -6V -5V -4V -3.5V 6 4 -BVDSS, Normalized Drain-Source Breakdown Voltage -I D, Drain Current (A) 8 -3V 2 VGS=-2.5V 1.2 1 0.8 0.6 ID=-250μA, VGS=0V 0.4 0 0 1 2 3 4 -VDS, Drain-Source Voltage(V) -75 -50 -25 5 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) Source Drain Current vs Source-Drain Voltage Static Drain-Source On-State resistance vs Drain Current 1000 1.2 VGS=-2.5V -VSD , Source-Drain Voltage(V) RDS(on), Static Drain-Source On-State Resistance(mΩ) VGS=0V VGS=-3V VGS=-4.5V 1 Tj=25°C 0.8 0.6 Tj=150°C 0.4 VGS=-10V 0.2 100 0.01 0.1 1 -ID, Drain Current(A) 10 0 100 R DS(on) , Normalized Static Drain-Source On-State Resistance R DS(on) , Static Drain-Source On-State Resistance(mΩ) 900 ID=-1.5A 700 600 500 400 300 200 100 0 MTBA6C12J4 2 4 6 8 -VGS, Gate-Source Voltage(V) 8 10 2.4 1000 0 4 6 -IS , Source Drain Current(A) Drain-Source On-State Resistance vs Junction Tempearture Static Drain-Source On-State Resistance vs Gate-Source Voltage 800 2 10 2 VGS=-10V, ID=-1.5A 1.6 RDS(ON) @Tj=25°C : 246mΩ typ. 1.2 0.8 VGS=-4.5V, ID=-1A RDS(ON) @Tj=25°C : 276mΩ typ. 0.4 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) CYStek Product Specification Spec. No. : C973J4 Issued Date : 2014.06.13 Revised Date : 2014.10.02 Page No. : 8/13 CYStech Electronics Corp. Q2, P-CH Typical Characteristics(Cont.) Threshold Voltage vs Junction Tempearture Capacitance vs Drain-to-Source Voltage 1.4 -VGS(th) , Threshold Voltage(V) Capacitance---(pF) 10000 Ciss 1000 C oss 100 1.2 1 ID=-1mA 0.8 ID=-250μA 0.6 Crss 0.4 10 0.1 1 10 -VDS, Drain-Source Voltage(V) -75 -50 -25 100 Forward Transfer Admittance vs Drain Current 25 50 75 100 125 150 175 Gate Charge Characteristics 10 100 VDS=-96V -VGS, Gate-Source Voltage(V) GFS, Forward Transfer Admittance(S) 0 Tj, Junction Temperature(°C) 10 1 VDS=-10V Pulsed TA=25°C 0.1 0.01 0.001 8 VDS=-60V 6 4 2 ID=-1.5A 0 0.01 0.1 1 -ID, Drain Current(A) 0 10 2 4 6 8 10 Qg, Total Gate Charge(nC) 12 14 Maximum Drain Current vs Junction Temperature Maximum Safe Operating Area 2 100 -I D, Maximum Drain Current(A) -I D, Drain Current(A) 1.8 10 100μs 1 1ms 10ms 0.1 100ms TA=25°C, Tj=150°C, VGS=-10V θ JA=90°C/W, Single Pulse 0.01 0.1 MTBA6C12J4 1 10 100 -ID, Drain-Source Voltage(V) 1s DC 1.6 1.4 1.2 1 0.8 0.6 0.4 TA=25°C, Tj(max)=150°C,VGS=-10V RθJA=90°C/W 0.2 0 1000 25 50 75 100 125 150 Tj, Junction Temperature(°C) 175 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C973J4 Issued Date : 2014.06.13 Revised Date : 2014.10.02 Page No. : 9/13 Q2, P-CH Typical Characteristics(Cont.) Typical Transfer Characteristics 8 50 TJ(MAX) =150°C TA=25°C θ JA=90°C/W 40 6 Power (W) -I D, Drain Current (A) VDS=-10V Single Pulse Power Rating, Junction to Ambient (Note on page 2) 4 30 20 2 10 0 0 1 2 3 4 -VGS, Gate-Source Voltage(V) 5 0 0.001 0.01 0.1 1 Pulse Width(s) 10 100 Transient Thermal Response Curves 1 r(t), Normalized EffectiveTransient Thermal Resistance D=0.5 0.2 1.Rθ JA(t)=r(t)*Rθ JA 2.Duty Factor, D=t1/t2 3.TJM-TA=PDM*Rθ JA(t) 4.Rθ JA=90 °C/W 0.1 0.1 0.05 0.02 0.01 0.01 Single Pulse 0.001 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 t1, Square Wave Pulse Duration(s) 1.E+01 1.E+02 1.E+03 Maximum Drain Current vs Case Temperature -I D, Maximum Drain Current(A) 7 6 5 4 3 2 Tj(max)=175°C, VGS=-4.5V RθJC=6°C/W 1 0 25 MTBA6C12J4 50 75 100 125 150 TC , Case Temperature(°C) 175 200 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C973J4 Issued Date : 2014.06.13 Revised Date : 2014.10.02 Page No. : 10/13 Reel Dimension Carrier Tape Dimension MTBA6C12J4 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C973J4 Issued Date : 2014.06.13 Revised Date : 2014.10.02 Page No. : 11/13 Recommended soldering footprint Unit : mm MTBA6C12J4 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C973J4 Issued Date : 2014.06.13 Revised Date : 2014.10.02 Page No. : 12/13 Recommended wave soldering condition Product Peak Temperature Soldering Time Pb-free devices 260 +0/-5 °C 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Sn-Pb eutectic Assembly Average ramp-up rate 3°C/second max. (Tsmax to Tp) Preheat 100°C −Temperature Min(TS min) −Temperature Max(TS max) 150°C −Time(ts min to ts max) 60-120 seconds Time maintained above: −Temperature (TL) 183°C − Time (tL) 60-150 seconds Peak Temperature(TP) 240 +0/-5 °C Time within 5°C of actual peak 10-30 seconds temperature(tp) Ramp down rate 6°C/second max. 6 minutes max. Time 25 °C to peak temperature Pb-free Assembly 3°C/second max. 150°C 200°C 60-180 seconds 217°C 60-150 seconds 260 +0/-5 °C 20-40 seconds 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. MTBA6C12J4 CYStek Product Specification Spec. No. : C973J4 Issued Date : 2014.06.13 Revised Date : 2014.10.02 Page No. : 13/13 CYStech Electronics Corp. TO-252 Dimension Marking: Tab Device Name Date code BA6 C12 □□□□ Style: Pin 1.Soure 1 2.Gate 1 3.&Tab Drain 1& Drain 2 4. Source 2 5. Gate 2 4-Lead TO-252 Plastic Surface Mount Package CYStek Package Code: J4 Inches Min. Max. 0.0866 0.0945 0.0000 0.0059 0.0157 0.0236 0.0199 0.0315 0.2047 0.2165 0.0177 0.0217 0.2126 0.2283 0.1799 - DIM A A1 b b2 b3 c2 D D1 Millimeters Min. Max. 2.20 2.40 0.00 0.15 0.40 0.60 0.50 0.80 5.20 5.50 0.45 0.55 5.40 5.80 4.57 - DIM E E1 e F H L L1 L4 Inches Min. Max. 0.2520 0.2677 0.1500 0.0500 REF 0.0157 0.0236 0.3701 0.4016 0.0551 0.0697 0.0945 0.1181 0.0315 0.0472 Millimeters Min. Max. 6.40 6.80 3.81 1.27 REF 0.40 0.60 9.40 10.20 1.40 1.77 2.40 3.00 0.80 1.20 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead : Pure tin plated. • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTBA6C12J4 CYStek Product Specification